KR100835776B1 - 기판처리방법 및 기판처리장치 - Google Patents
기판처리방법 및 기판처리장치 Download PDFInfo
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- KR100835776B1 KR100835776B1 KR1020070029681A KR20070029681A KR100835776B1 KR 100835776 B1 KR100835776 B1 KR 100835776B1 KR 1020070029681 A KR1020070029681 A KR 1020070029681A KR 20070029681 A KR20070029681 A KR 20070029681A KR 100835776 B1 KR100835776 B1 KR 100835776B1
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- H—ELECTRICITY
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
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- H—ELECTRICITY
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L21/67017—Apparatus for fluid treatment
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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- G—PHYSICS
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
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- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
Claims (9)
- 기판을 세정처리하는 기판처리방법에 있어서,상기 기판의 표면에 액막을 부착시킨 상태에서 상기 액막을 동결시키는 제1 공정과,상기 기판 표면에 대하여 물리적인 세정작용을 갖는 물리세정, 화학적인 세정작용을 갖는 화학세정 또는 상기 물리세정과 상기 화학세정을 조합시킨 세정을 상기 기판 표면에 실시하여 상기 기판 표면으로부터 동결 후의 액막을 제거하는 제2 공정을 구비한 것을 특징으로 하는 기판처리방법.
- 제1항에 있어서,상기 제2 공정에서는, 상기 동결 후의 액막이 융해(融解)하지 않는 동안에 상기 액막을 상기 기판 표면으로부터 제거하는 것을 특징으로 하는 기판처리방법.
- 제1항 또는 제2항에 있어서,상기 제2 공정에서는, SC1용액(암모니아수와 과산화수소수와의 혼합 수용액)을 상기 기판 표면을 향하여 공급함으로써 상기 기판 표면으로부터 상기 동결 후의 액막을 제거하는 것을 특징으로 하는 기판처리방법.
- 제1항 또는 제2항에 있어서,상기 제2 공정에서는, 처리액과 기체를 혼합하여 생성한 상기 처리액의 액방울을 상기 기판 표면을 향하여 공급함으로써 상기 기판 표면으로부터 상기 동결 후의 액막을 제거하는 것을 특징으로 하는 기판처리방법.
- 기판을 세정처리하는 기판처리장치에 있어서,상기 기판의 표면에 액막을 부착시킨 상태에서 상기 액막을 동결시키는 동결기구와,상기 기판 표면에 대하여 물리적인 세정작용을 갖는 물리세정, 화학적인 세정작용을 갖는 화학세정 또는 상기 물리세정과 상기 화학세정을 조합시킨 세정을 상기 기판 표면에 실시하는 세정기구를 구비하고,상기 동결기구는 상기 세정기구에 의한 세정 전의 전처리로서 상기 기판 표면에 부착하고 있는 상기 액막을 동결시키고, 상기 세정기구는 상기 물리세정, 상기 화학세정 또는 상기 물리세정과 상기 화학세정을 조합시킨 세정을 상기 기판 표면에 실시하여 상기 기판 표면으로부터 동결 후의 액막을 제거하는 것을 특징으로 하는 기판처리장치.
- 제5항에 있어서,상기 세정기구는 SC1용액을 상기 기판 표면을 향하여 공급하는 공급수단과, 상기 기판을 회전시키는 회전수단을 갖고, 상기 회전수단에 의해 회전되는 상기 기판의 표면에 상기 공급수단으로부터 SC1용액을 공급시키는 것을 특징으로 하는 기 판처리장치.
- 제5항에 있어서,상기 세정기구는 SC1용액을 저류한 처리조와, SC1용액을 상기 처리조에 도입하여 상기 SC1용액을 상기 처리조로부터 오버플로우(overflow)시키는 도입수단과, 상기 처리조내의 SC1용액 중에 상기 기판을 침지시키는 침지수단을 갖고, 상기 침지수단에 의해 상기 처리조내의 SC1용액 중에 상기 동결 후의 액막을 상기 기판마다 침지시키는 것을 특징으로 하는 기판처리장치.
- 제5항에 있어서,상기 세정기구는 처리액과 기체를 혼합하여 생성된 상기 처리액의 액방울을 상기 기판 표면을 향하여 토출가능한 이류체 노즐과, 상기 이류체 노즐에 처리액을 공급하는 처리액공급원과, 상기 이류체 노즐에 기체를 공급하는 기체공급원을 갖는 것을 특징으로 하는 기판처리장치.
- 제8항에 있어서,상기 이류체 노즐은 처리액을 토출하는 처리액토출수단과, 상기 처리액토출수단에 근접하여 마련되어, 기체를 토출하는 기체토출수단을 갖고, 상기 처리액토출수단으로부터 토출되는 처리액을 공중에서 상기 기체토출수단으로부터 토출된 기체와 혼합하여 상기 처리액의 액방울을 생성하여, 상기 기판 표면에 충돌시키는 것 을 특징으로 하는 기판처리장치.
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JPJP-P-2006-00108801 | 2006-04-11 | ||
JP2006108801A JP4884057B2 (ja) | 2006-04-11 | 2006-04-11 | 基板処理方法および基板処理装置 |
JPJP-P-2006-00248181 | 2006-09-13 | ||
JP2006248181A JP4767138B2 (ja) | 2006-09-13 | 2006-09-13 | 基板処理装置、液膜凍結方法および基板処理方法 |
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KR20070101124A KR20070101124A (ko) | 2007-10-16 |
KR100835776B1 true KR100835776B1 (ko) | 2008-06-05 |
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US (1) | US20070235062A1 (ko) |
KR (1) | KR100835776B1 (ko) |
TW (1) | TW200739710A (ko) |
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TWI362067B (ko) | 2012-04-11 |
US20070235062A1 (en) | 2007-10-11 |
TW200739710A (en) | 2007-10-16 |
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