KR100688838B1 - 촉매 화학기상증착장치 및 촉매 화학기상증착방법 - Google Patents
촉매 화학기상증착장치 및 촉매 화학기상증착방법 Download PDFInfo
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- KR100688838B1 KR100688838B1 KR1020050040311A KR20050040311A KR100688838B1 KR 100688838 B1 KR100688838 B1 KR 100688838B1 KR 1020050040311 A KR1020050040311 A KR 1020050040311A KR 20050040311 A KR20050040311 A KR 20050040311A KR 100688838 B1 KR100688838 B1 KR 100688838B1
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- 239000003054 catalyst Substances 0.000 title claims abstract description 206
- 238000000034 method Methods 0.000 title claims abstract description 116
- 238000005229 chemical vapour deposition Methods 0.000 title claims description 16
- 230000008569 process Effects 0.000 claims abstract description 63
- 238000004050 hot filament vapor deposition Methods 0.000 claims abstract description 60
- 239000000758 substrate Substances 0.000 claims abstract description 33
- 238000010438 heat treatment Methods 0.000 claims description 20
- 239000012212 insulator Substances 0.000 claims description 8
- 238000004140 cleaning Methods 0.000 claims description 7
- 238000000151 deposition Methods 0.000 claims description 4
- 230000006835 compression Effects 0.000 claims description 3
- 238000007906 compression Methods 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims description 3
- 238000012423 maintenance Methods 0.000 claims description 2
- 239000007789 gas Substances 0.000 abstract description 99
- 230000015572 biosynthetic process Effects 0.000 abstract description 5
- 239000000126 substance Substances 0.000 abstract description 5
- 239000010409 thin film Substances 0.000 description 16
- 239000010408 film Substances 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- 230000007246 mechanism Effects 0.000 description 6
- 238000000354 decomposition reaction Methods 0.000 description 4
- 238000007665 sagging Methods 0.000 description 4
- 230000009471 action Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000003213 activating effect Effects 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 230000003197 catalytic effect Effects 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
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- 238000006555 catalytic reaction Methods 0.000 description 1
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- 230000017525 heat dissipation Effects 0.000 description 1
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- 239000012535 impurity Substances 0.000 description 1
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- 238000009413 insulation Methods 0.000 description 1
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- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
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- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
Claims (23)
- 공정챔버, 상기 공정챔버 내에 공정가스를 인입하도록 구성되는 샤워헤드, 상기 샤워헤드로부터 인입되는 가스를 분해시키도록 상기 공정챔버 내에 구성되는 장력 부가가 가능한 촉매 와이어 구조체 및 상기 촉매 와이어 구조체에서 분해된 가스가 증착되는 기판을 포함하여 이루어지는 촉매 화학기상증착장치에 있어서,상기 촉매 와이어 구조체는, 촉매 와이어가 연결되며 이에 장력을 부가하도록 다수 개가 구성된 촉매 와이어용 장력부가장치 및 이를 지지하는 지지체를 구비하되, 상기 촉매 와이어용 장력부가장치는, 상기 지지체에 지지되도록 구성된 몸체부; 상기 몸체부에 수납되는 피스톤과 상기 몸체부에 일부 통과되도록 구성되는 피스톤 축을 가지며, 상기 피스톤 축의 한 끝에 상기 촉매 와이어가 연결되도록 구성된 피스톤부; 및 상기 피스톤부의 상기 피스톤 축에 연결된 상기 촉매 와이어에 장력을 부가하도록 구성되고, 상기 몸체부에 수납되는 탄성부재;를 포함하는 것을 특징으로 하는 촉매 화학기상증착장치.
- 제1항에 있어서,상기 몸체부는 상기 지지체에 일체형으로 형성되는 촉매 화학기상증착장치.
- 제1항에 있어서,상기 몸체부의 내부에는 상기 피스톤부의 상기 피스톤이 계지될 수 있도록 단차를 이루어 구성되는 촉매 화학기상증착장치.
- 제1항에 있어서,상기 몸체부는 절연체로 구성되는 촉매 화학기상증착장치.
- 제1항에 있어서,상기 피스톤부의 어느 한 단부에는 통과공이 더 형성되어 상기 촉매 와이어가 이를 관통하여 연결되도록 된 촉매 화학기상증착장치.
- 제5항에 있어서,상기 피스톤부에 형성된 상기 통과공은 테이퍼 또는 라운드로 형성되는 촉매 화학기상증착장치.
- 제1항에 있어서,상기 피스톤부에는 상기 피스톤에서 상기 피스톤 축에 걸쳐 가스 공급라인이 더 형성되어 이루어지는 촉매 화학기상증착장치.
- 제1항에 있어서,상기 탄성부재는 압축 스프링으로 이루어지는 촉매 화학기상증착장치.
- 제1항에 있어서,상기 촉매 와이어 구조체는, 상기 촉매 와이어에 전력을 공급하는 전력 공급부를 포함하되, 상기 전력 공급부는, 전력 공급원; 상기 전력 공급원으로부터 전력이 송전되는 선재; 및 상기 선재 및 상기 촉매 와이어를 연결하여 주도록 구성된 접속단자;를 포함하여 이루어지는 촉매 화학기상증착장치.
- 제9항에 있어서,상기 접속단자는 상기 지지체 상에 구성되는 촉매 화학기상증착장치.
- 제10항에 있어서,상기 접속단자는 절연체로 이루어지는 촉매 화학기상증착장치.
- 제1항에 있어서,상기 지지체에는 상기 촉매 와이어에 가스를 공급하여 주도록 가스 공급라인이 그 내부에 더 구성되어 이루어지고, 가스 인입라인이 더 구성되어 이루어지는 촉매 화학기상증착장치.
- 제1항에 있어서,상기 촉매 와이어는 상기 지지체 내에서 'ㄹ'이 연속된 형태로 상기 각각의 촉매 와이어용 장력부가장치에 연결되는 촉매 화학기상증착장치.
- 제1항 내지 제13항 중 어느 한 항에 있어서의 촉매 화학기상증착장치 내에 진공의 배기가 이루어지는 진공배기단계;상기 진공이 이루어진 공정챔버 내에 공정 가스가 인입되는 공정개시단계;상기 공정 가스와 촉매 와이어와의 반응이 일어나는 촉매 와이어 작동단계; 및상기 촉매 와이어와 반응된 상기 공정 가스가 상기 공정챔버 내의 기판 상에 증착되는 성막단계;로 이루어지는 촉매 화학기상증착방법.
- 제14항에 있어서,상기 공정개시단계 이전에 상기 공정챔버를 클리닝하여 주는 청정화단계가 더 포함되어 이루어지는 촉매 화학기상증착방법.
- 제14항에 있어서,상기 촉매 와이어 작동단계는,상기 촉매 와이어가 가열되는 촉매 와이어 가열단계;상기 가열된 촉매 와이어가 신장되는 신장단계; 및상기 신장된 촉매 와이어에 장력이 부가되는 장력부가단계;로 이루어지는 촉매 화학기상증착방법.
- 제16항에 있어서,상기 장력부가단계는,상기 촉매 와이어에 장력이 유지되는 유지단계;상기 신장된 촉매 와이어에 추가적인 장력이 더 부여되는 부여단계; 및상기 촉매 와이어에 추가적인 장력이 더 부여된 상태로 유지되는 유지단계;로 이루어지는 촉매 화학기상증착방법.
- 제17항에 있어서,상기 신장된 촉매 와이어에 더 부여되는 추가적인 장력은 장력부가장치가 장착된 촉매와이어 구조체로서 부여되는 촉매 화학기상증착방법.
- 제16항에 있어서,상기 촉매 와이어 작동단계는 상기 촉매 와이어 구조체 상에 이물질 생성 방지를 위하여 추가가스공급단계가 더 포함되어 이루어지는 촉매 화학기상증착방법.
- 제19항에 있어서,상기 추가가스공급단계는 가스 공급라인이 구비된 촉매 와이어 구조체로서 이루어지는 촉매 화학기상증착방법.
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Priority Applications (5)
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KR1020050040311A KR100688838B1 (ko) | 2005-05-13 | 2005-05-13 | 촉매 화학기상증착장치 및 촉매 화학기상증착방법 |
JP2005359323A JP4308818B2 (ja) | 2005-05-13 | 2005-12-13 | 触媒化学気相蒸着装置 |
US11/405,552 US8052795B2 (en) | 2005-05-13 | 2006-04-18 | Catalyst enhanced chemical vapor deposition apparatus and deposition method using the same |
TW095113716A TWI316971B (en) | 2005-05-13 | 2006-04-18 | Catalyst enhanced chemical vapor deposition apparatus and deposition method using the same |
CN200610078368A CN100582301C (zh) | 2005-05-13 | 2006-05-15 | 催化剂增强的化学汽相淀积设备及利用该设备的淀积方法 |
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Cited By (1)
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KR101128739B1 (ko) * | 2008-12-02 | 2012-03-26 | 엘아이지에이디피 주식회사 | 기판증착장치 |
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JP4948021B2 (ja) * | 2006-04-13 | 2012-06-06 | 株式会社アルバック | 触媒体化学気相成長装置 |
US9157152B2 (en) * | 2007-03-29 | 2015-10-13 | Tokyo Electron Limited | Vapor deposition system |
US8409351B2 (en) * | 2007-08-08 | 2013-04-02 | Sic Systems, Inc. | Production of bulk silicon carbide with hot-filament chemical vapor deposition |
JP5268059B2 (ja) * | 2008-09-03 | 2013-08-21 | 株式会社石川製作所 | 触媒化学気相成長装置の触媒体支持構造 |
JP5430979B2 (ja) * | 2009-03-12 | 2014-03-05 | 大亜真空株式会社 | 熱フィラメントcvd装置 |
DE102009023471B4 (de) * | 2009-06-02 | 2012-08-30 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Beschichtungsanlage und -verfahren |
JP5586199B2 (ja) * | 2009-10-02 | 2014-09-10 | 三洋電機株式会社 | 触媒cvd装置、膜の形成方法及び太陽電池の製造方法 |
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JP4308818B2 (ja) | 2009-08-05 |
TWI316971B (en) | 2009-11-11 |
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CN100582301C (zh) | 2010-01-20 |
US8052795B2 (en) | 2011-11-08 |
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US20060254513A1 (en) | 2006-11-16 |
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