KR100648632B1 - 높은 유전율을 갖는 유전체 구조물의 제조 방법 및 이를 포함하는 반도체 소자의 제조 방법 - Google Patents
높은 유전율을 갖는 유전체 구조물의 제조 방법 및 이를 포함하는 반도체 소자의 제조 방법 Download PDFInfo
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- KR100648632B1 KR100648632B1 KR1020050006543A KR20050006543A KR100648632B1 KR 100648632 B1 KR100648632 B1 KR 100648632B1 KR 1020050006543 A KR1020050006543 A KR 1020050006543A KR 20050006543 A KR20050006543 A KR 20050006543A KR 100648632 B1 KR100648632 B1 KR 100648632B1
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- Prior art keywords
- dielectric layer
- silicon
- doped
- dielectric
- forming
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 103
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 25
- 238000000034 method Methods 0.000 title claims description 87
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 86
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 82
- 239000010703 silicon Substances 0.000 claims abstract description 82
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 73
- 239000000758 substrate Substances 0.000 claims abstract description 70
- 229910052751 metal Inorganic materials 0.000 claims abstract description 48
- 239000002184 metal Substances 0.000 claims abstract description 48
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 35
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 27
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 26
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 72
- 229910021529 ammonia Inorganic materials 0.000 claims description 35
- 238000003860 storage Methods 0.000 claims description 20
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 15
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 15
- 229910052735 hafnium Inorganic materials 0.000 claims description 14
- 229910052723 transition metal Inorganic materials 0.000 claims description 10
- 150000003624 transition metals Chemical class 0.000 claims description 10
- 238000005229 chemical vapour deposition Methods 0.000 claims description 9
- 229910000449 hafnium oxide Inorganic materials 0.000 claims description 8
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims description 8
- 238000000231 atomic layer deposition Methods 0.000 claims description 6
- 239000010936 titanium Substances 0.000 claims description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 5
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 5
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 claims description 5
- 229910052761 rare earth metal Inorganic materials 0.000 claims description 5
- 150000002910 rare earth metals Chemical class 0.000 claims description 5
- 229910052719 titanium Inorganic materials 0.000 claims description 5
- 229910052726 zirconium Inorganic materials 0.000 claims description 5
- 229910052746 lanthanum Inorganic materials 0.000 claims description 4
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 claims description 4
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 claims description 4
- 229910052758 niobium Inorganic materials 0.000 claims description 4
- 239000010955 niobium Substances 0.000 claims description 4
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 4
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims description 4
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims description 4
- 238000005240 physical vapour deposition Methods 0.000 claims description 4
- 229910052706 scandium Inorganic materials 0.000 claims description 4
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 claims description 4
- 229910052715 tantalum Inorganic materials 0.000 claims description 4
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 4
- 229910052720 vanadium Inorganic materials 0.000 claims description 4
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052727 yttrium Inorganic materials 0.000 claims description 4
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims description 4
- 229910001928 zirconium oxide Inorganic materials 0.000 claims description 4
- 238000004549 pulsed laser deposition Methods 0.000 claims description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 2
- XHCLAFWTIXFWPH-UHFFFAOYSA-N [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] XHCLAFWTIXFWPH-UHFFFAOYSA-N 0.000 claims description 2
- 229910000484 niobium oxide Inorganic materials 0.000 claims description 2
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 claims description 2
- HYXGAEYDKFCVMU-UHFFFAOYSA-N scandium oxide Chemical compound O=[Sc]O[Sc]=O HYXGAEYDKFCVMU-UHFFFAOYSA-N 0.000 claims description 2
- 229910001936 tantalum oxide Inorganic materials 0.000 claims description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 2
- 229910001935 vanadium oxide Inorganic materials 0.000 claims description 2
- 239000003990 capacitor Substances 0.000 abstract description 12
- 239000010410 layer Substances 0.000 description 262
- 239000011229 interlayer Substances 0.000 description 33
- 229920002120 photoresistant polymer Polymers 0.000 description 22
- 238000005530 etching Methods 0.000 description 17
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 17
- 229920005591 polysilicon Polymers 0.000 description 17
- 239000000126 substance Substances 0.000 description 14
- 150000004767 nitrides Chemical class 0.000 description 11
- 229910052581 Si3N4 Inorganic materials 0.000 description 9
- 239000007789 gas Substances 0.000 description 9
- 239000012535 impurity Substances 0.000 description 9
- 238000002955 isolation Methods 0.000 description 9
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 9
- 238000005498 polishing Methods 0.000 description 8
- 125000004429 atom Chemical group 0.000 description 7
- 238000007517 polishing process Methods 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 5
- 238000005468 ion implantation Methods 0.000 description 5
- 125000004433 nitrogen atom Chemical group N* 0.000 description 5
- 125000006850 spacer group Chemical group 0.000 description 5
- 229910001873 dinitrogen Inorganic materials 0.000 description 4
- 230000006698 induction Effects 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 125000004430 oxygen atom Chemical group O* 0.000 description 4
- CEPICIBPGDWCRU-UHFFFAOYSA-N [Si].[Hf] Chemical compound [Si].[Hf] CEPICIBPGDWCRU-UHFFFAOYSA-N 0.000 description 3
- ILCYGSITMBHYNK-UHFFFAOYSA-N [Si]=O.[Hf] Chemical compound [Si]=O.[Hf] ILCYGSITMBHYNK-UHFFFAOYSA-N 0.000 description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 3
- 229910021332 silicide Inorganic materials 0.000 description 3
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- GNTDGMZSJNCJKK-UHFFFAOYSA-N divanadium pentaoxide Chemical compound O=[V](=O)O[V](=O)=O GNTDGMZSJNCJKK-UHFFFAOYSA-N 0.000 description 2
- 238000011065 in-situ storage Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 description 2
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 2
- 229910000314 transition metal oxide Inorganic materials 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910002651 NO3 Inorganic materials 0.000 description 1
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000005380 borophosphosilicate glass Substances 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
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- 150000002736 metal compounds Chemical class 0.000 description 1
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- 238000005121 nitriding Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 229910001404 rare earth metal oxide Inorganic materials 0.000 description 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
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Abstract
Description
Claims (30)
- 반도체 기판 상에 실리콘이 도핑된 금속 산화물을 사용하여 제1 유전층을 형성하는 단계;상기 제1 유전층이 형성된 반도체 기판을 챔버 내에 설치된 서셉터 상에 위치시키는 단계; 및상기 챔버에 전기적으로 연결된 전원으로부터 상기 서셉터와 접지 사이의 전압차를 조절하면서 상기 제1 유전층을 플라즈마로 처리하여 상기 제1 유전층 상에 제2 유전층을 형성하는 단계를 포함하는 유전체 구조물의 제조 방법.
- 제 1 항에 있어서, 상기 제1 유전층은 화학 기상 증착 공정, 원자층 증착 공정, 물리 기상 증착 공정 또는 펄스 레이저 증착 공정을 사용하여 형성되는 것을 특징으로 하는 유전체 구조물의 제조 방법.
- 제 1 항에 있어서, 상기 실리콘이 도핑된 금속 산화물은 실리콘이 도핑된 IV족 전이 금속의 산화물, 실리콘이 도핑된 V족 전이 금속의 산화물 및 실리콘이 도핑된 희토류 금속의 산화물로 이루어진 그룹으로부터 선택된 어느 하나를 포함하는 것을 특징으로 하는 유전체 구조물의 제조 방법.
- 제 3 항에 있어서, 상기 실리콘이 도핑된 금속 산화물은 실리콘이 도핑된 티 타늄 산화물, 실리콘이 도핑된 지르코늄 산화물, 실리콘이 도핑된 하프늄 산화물, 실리콘이 도핑된 바나듐 산화물, 실리콘이 도핑된 니오븀 산화물, 실리콘이 도핑된 탄탈륨 산화물, 실리콘이 도핑된 스칸듐 산화물, 실리콘이 도핑된 이트륨 산화물 및 실리콘이 도핑된 란탄 산화물로 이루어진 그룹 중에서 선택된 어느 하나를 포함하는 것을 특징으로 하는 유전체 구조물의 제조 방법.
- 제 1 항에 있어서, 상기 서셉터와 접지 사이의 전압차는 300 내지 500V인 것을 특징으로 하는 유전체 구조물의 제조 방법.
- 제 1 항에 있어서, 상기 플라즈마는 암모니아 플라즈마 또는 질소 플라즈마인 것을 특징으로 하는 유전체 구조물의 제조 방법.
- 제 6 항에 있어서, 상기 제1 유전층은 300 내지 900℃의 온도 및 250 내지 800W의 전력으로 60 내지 180초 동안 처리되는 것을 특징으로 하는 유전체 구조물의 제조 방법.
- 제 1 항에 있어서, 상기 제2 유전층은 실리콘이 도핑된 금속 산질화물로 이루어진 것을 특징으로 하는 유전체 구조물의 제조 방법.
- 제 1 항에 있어서, 상기 제2 유전층 내의 질소 함량은 5 내지 25%인 것을 특 징으로 하는 유전체 구조물의 제조 방법.
- 제 8 항에 있어서, 상기 제2 유전층은 실리콘이 도핑된 IV족 전이 금속의 산질화물, 실리콘이 도핑된 V족 전이 금속의 산질화물 및 실리콘이 도핑된 희토류 금속의 산질화물로 이루어진 그룹으로부터 선택된 어느 하나를 포함하는 것을 특징으로 하는 유전체 구조물의 제조 방법.
- 제 10 항에 있어서, 상기 제2 유전층은 실리콘이 도핑된 티타늄 산질화물, 실리콘이 도핑된 지르코늄 산질화물, 실리콘이 도핑된 하프늄 산질화물, 실리콘이 도핑된 바나듐 산질화물, 실리콘이 도핑된 니오븀 산질화물, 실리콘이 도핑된 탄탈륨 산질화물, 실리콘이 도핑된 스칸듐 산질화물, 실리콘이 도핑된 이트륨 산질화물및 실리콘이 도핑된 란탄 산질화물로 이루어진 그룹 중에서 선택된 어느 하나를 포함하는 것을 특징으로 하는 유전체 구조물의 제조 방법.
- 제 1 항에 있어서, 상기 제1 유전층을 형성하기 전에 상기 기판 상에 제1 도전성 구조물을 형성하는 단계를 더 포함하는 것을 특징으로 하는 유전체 구조물의 제조 방법.
- 제 12 항에 있어서, 상기 제2 유전층을 형성한 후, 상기 제2 유전층 상에 제2 도전성 구조물을 형성하는 단계를 더 포함하는 것을 특징으로 하는 유전체 구조 물의 제조 방법.
- 제 1 항에 있어서, 상기 제1 유전층을 형성하는 단계 및 상기 제2 유전층을 형성하는 단계를 N(여기서, N은 양의 정수이다)회 반복하는 것을 특징으로 하는 유전체 구조물의 제조 방법.
- 반도체 기판 상에 실리콘이 도핑된 금속 산화물을 사용하여 제1 유전층을 형성하는 단계;상기 제1 유전층이 형성된 반도체 기판을 챔버 내에 설치된 서셉터 상에 위치시키는 단계;상기 챔버에 전기적으로 연결된 전원으로부터 상기 서셉터와 접지 사이의 제1 전압차를 조절하면서 상기 제1 유전층을 제1 플라즈마로 처리하여 상기 제1 유전층 상에 제2 유전층을 형성하여 상기 반도체 기판 상에 제1 유전체 구조물을 형성하는 단계;상기 제1 유전체 구조물 상에 게이트 구조물을 형성하는 단계;상기 게이트 구조물에 인접하는 상기 반도체 기판에 콘택 영역을 형성하는 단계;상기 콘택 영역에 전기적으로 연결되는 패드를 형성하는 단계;상기 패드에 전기적으로 연결되는 스토리지 전극을 형성하는 단계;상기 스토리지 전극 상에 제2 유전체 구조물을 형성하는 단계; 및상기 제2 유전체 구조물 상에 플레이트 전극을 형성하는 단계를 포함하는 반도체 소자의 제조 방법.
- 제 15 항에 있어서, 상기 제2 유전체 구조물을 형성하는 단계는,상기 스토리지 전극 상에 실리콘이 도핑된 금속 산화물을 사용하여 제3 유전층을 형성하는 단계;상기 제3 유전층이 형성된 반도체 기판을 상기 서셉터 상에 위치시키는 단계; 및상기 전원으로부터 상기 서셉터와 상기 접지 사이의 제2 전압차를 조절하면서 상기 제3 유전층을 제2 플라즈마로 처리하여 상기 제3 유전층 상에 제4 유전층을 형성하는 단계를 포함하는 것을 특징으로 하는 반도체 소자의 제조 방법.
- 제 16 항에 있어서, 상기 제1 전압차와 상기 제2 전압차는 동일한 것을 특징으로 하는 반도체 소자의 제조 방법.
- 제 17 항에 있어서, 상기 제1 전압차 및 상기 제2 전압차는 각기 300 내지 500V인 것을 하는 반도체 소자의 제조 방법.
- 제 16 항에 있어서, 상기 제1 유전층 및 상기 제3 유전층은 각기 화학 기상 증착 공정, 원자층 증착 공정, 물리 기상 증착 공정 또는 펄스 레이저 증착 공정을 사용하여 형성되는 것을 특징으로 하는 반도체 소자의 제조 방법.
- 제 16 항에 있어서, 상기 제1 유전층 및 상기 제3 유전층은 각기 실리콘이 도핑된 IV족 전이 금속의 산화물, 실리콘이 도핑된 V족 전이 금속의 산화물 및 실리콘이 도핑된 희토류 금속의 산화물로 이루어진 그룹으로부터 선택된 어느 하나를 포함하는 것을 특징으로 하는 반도체 소자의 제조 방법.
- 제 16 항에 있어서, 상기 제1 플라즈마 및 상기 제2 플라즈마는 각기 암모니아 플라즈마 또는 질소 플라즈마인 것을 특징으로 하는 반도체 소자의 제조 방법.
- 제 16 항에 있어서, 상기 제1 유전층 및 상기 제3 유전층은 각기 300 내지 900℃의 온도 및 250 내지 800W의 전력으로 60 내지 180초 동안 처리되는 것을 특징으로 하는 반도체 소자의 제조 방법.
- 제 16 항에 있어서, 상기 제2 유전층 및 상기 제4 유전층은 실리콘이 도핑된 금속 산질화물로 이루어진 것을 특징으로 하는 반도체 소자의 제조 방법.
- 제 23 항에 있어서, 상기 제2 유전층 및 상기 제4 유전층 내의 질소 함량은 각기 5 내지 25%인 것을 특징으로 하는 반도체 소자의 제조 방법.
- 제 23 항에 있어서, 상기 제2 유전층 및 상기 제4 유전층은 각기 실리콘이 도핑된 IV족 전이 금속의 산질화물, 실리콘이 도핑된 V족 전이 금속의 산질화물 및 실리콘이 도핑된 희토류 금속의 산질화물로 이루어진 그룹으로부터 선택된 어느 하나를 포함하는 것을 특징으로 하는 반도체 소자의 제조 방법.
- 제 16 항에 있어서, 상기 제1 유전층을 형성하는 단계 및 상기 제2 유전층을 형성하는 단계를 N(여기서, N은 양의 정수이다)회 반복하는 것을 특징으로 하는 반도체 소자의 제조 방법.
- 제 26 항에 있어서, 상기 제3 유전층을 형성하는 단계 및 상기 제4 유전층을 형성하는 단계를 N(여기서, N은 양의 정수이다)회 반복하는 것을 특징으로 하는 반도체 소자의 제조 방법.
- 기판 상에 터널 산화막 패턴을 형성하는 단계;상기 터널 산화막 패턴 상에 플로팅 게이트를 형성하는 단계;상기 플로팅 게이트 상에 실리콘이 도핑된 금속 산화물을 사용하여 제1 유전층을 형성하는 단계;상기 제1 유전층이 형성된 반도체 기판을 챔버 내에 설치된 서셉터 상에 위치시키는 단계;상기 챔버에 전기적으로 연결된 전원으로부터 상기 서셉터와 접지 사이의 전압차를 조절하면서 상기 제1 유전층을 플라즈마로 처리하여 상기 제1 유전층 상에 제2 유전층을 형성하여 상기 플로팅 게이트 상에 유전체 구조물을 형성하는 단계;및상기 유전체 구조물 상에 컨트롤 게이트를 형성하는 단계를 포함하는 반도체소자의 제조 방법.
- 제 28 항에 있어서, 상기 플라즈마는 암모니아 플라즈마 또는 질소 플라즈마인 것을 특징으로 하는 반도체 소자의 제조 방법.
- 제 28 항에 있어서, 상기 제1 유전층을 형성하는 단계 및 상기 제2 유전층을 형성하는 단계를 N(여기서, N은 양의 정수이다)회 반복하는 것을 특징으로 하는 반도체 소자의 제조 방법.
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