KR100507049B1 - 웨이퍼 연마장치용 테이블에 적합한 다공질 탄화규소 소결체 - Google Patents
웨이퍼 연마장치용 테이블에 적합한 다공질 탄화규소 소결체 Download PDFInfo
- Publication number
- KR100507049B1 KR100507049B1 KR10-2001-7009596A KR20017009596A KR100507049B1 KR 100507049 B1 KR100507049 B1 KR 100507049B1 KR 20017009596 A KR20017009596 A KR 20017009596A KR 100507049 B1 KR100507049 B1 KR 100507049B1
- Authority
- KR
- South Korea
- Prior art keywords
- silicon carbide
- average particle
- particle diameter
- porous
- sintered body
- Prior art date
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 124
- 229910021426 porous silicon Inorganic materials 0.000 title claims abstract description 28
- 238000005498 polishing Methods 0.000 title claims description 58
- 239000013078 crystal Substances 0.000 claims abstract description 103
- 229910010271 silicon carbide Inorganic materials 0.000 claims abstract description 95
- 239000002245 particle Substances 0.000 claims abstract description 90
- 239000011148 porous material Substances 0.000 claims abstract description 29
- 239000000463 material Substances 0.000 claims description 57
- 239000000843 powder Substances 0.000 claims description 51
- 239000000203 mixture Substances 0.000 claims description 38
- 238000000034 method Methods 0.000 claims description 36
- 239000004065 semiconductor Substances 0.000 claims description 31
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- 230000008569 process Effects 0.000 claims description 15
- 238000002156 mixing Methods 0.000 claims description 12
- 239000012530 fluid Substances 0.000 claims description 3
- 230000004044 response Effects 0.000 abstract description 15
- 238000005336 cracking Methods 0.000 abstract description 6
- 229910052751 metal Inorganic materials 0.000 description 84
- 239000002184 metal Substances 0.000 description 84
- 235000012431 wafers Nutrition 0.000 description 83
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 79
- 229910052710 silicon Inorganic materials 0.000 description 77
- 239000010703 silicon Substances 0.000 description 77
- 239000000758 substrate Substances 0.000 description 28
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 16
- HMUNWXXNJPVALC-UHFFFAOYSA-N 1-[4-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]piperazin-1-yl]-2-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethanone Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)N1CCN(CC1)C(CN1CC2=C(CC1)NN=N2)=O HMUNWXXNJPVALC-UHFFFAOYSA-N 0.000 description 14
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 14
- 239000002994 raw material Substances 0.000 description 14
- VZSRBBMJRBPUNF-UHFFFAOYSA-N 2-(2,3-dihydro-1H-inden-2-ylamino)-N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]pyrimidine-5-carboxamide Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C(=O)NCCC(N1CC2=C(CC1)NN=N2)=O VZSRBBMJRBPUNF-UHFFFAOYSA-N 0.000 description 13
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- LDXJRKWFNNFDSA-UHFFFAOYSA-N 2-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)-1-[4-[2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidin-5-yl]piperazin-1-yl]ethanone Chemical compound C1CN(CC2=NNN=C21)CC(=O)N3CCN(CC3)C4=CN=C(N=C4)NCC5=CC(=CC=C5)OC(F)(F)F LDXJRKWFNNFDSA-UHFFFAOYSA-N 0.000 description 5
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- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical group OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 4
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- YLZOPXRUQYQQID-UHFFFAOYSA-N 3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)-1-[4-[2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidin-5-yl]piperazin-1-yl]propan-1-one Chemical compound N1N=NC=2CN(CCC=21)CCC(=O)N1CCN(CC1)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F YLZOPXRUQYQQID-UHFFFAOYSA-N 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- NIPNSKYNPDTRPC-UHFFFAOYSA-N N-[2-oxo-2-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 NIPNSKYNPDTRPC-UHFFFAOYSA-N 0.000 description 3
- AFCARXCZXQIEQB-UHFFFAOYSA-N N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CCNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 AFCARXCZXQIEQB-UHFFFAOYSA-N 0.000 description 3
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- 239000007788 liquid Substances 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 238000007517 polishing process Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000003763 carbonization Methods 0.000 description 2
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- 238000002485 combustion reaction Methods 0.000 description 2
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
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- FHVDTGUDJYJELY-UHFFFAOYSA-N 6-{[2-carboxy-4,5-dihydroxy-6-(phosphanyloxy)oxan-3-yl]oxy}-4,5-dihydroxy-3-phosphanyloxane-2-carboxylic acid Chemical compound O1C(C(O)=O)C(P)C(O)C(O)C1OC1C(C(O)=O)OC(OP)C(O)C1O FHVDTGUDJYJELY-UHFFFAOYSA-N 0.000 description 1
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- 229910017945 Cu—Ti Inorganic materials 0.000 description 1
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- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
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- 238000005469 granulation Methods 0.000 description 1
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- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
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- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/009—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone characterised by the material treated
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/56—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides
- C04B35/565—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides based on silicon carbide
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
- B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
- B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
- B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
- B24D3/02—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent
- B24D3/04—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially inorganic
- B24D3/14—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially inorganic ceramic, i.e. vitrified bondings
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
- B24D3/34—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents characterised by additives enhancing special physical properties, e.g. wear resistance, electric conductivity, self-cleaning properties
- B24D3/348—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents characterised by additives enhancing special physical properties, e.g. wear resistance, electric conductivity, self-cleaning properties utilised as impregnating agent for porous abrasive bodies
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D7/00—Bonded abrasive wheels, or wheels with inserted abrasive blocks, designed for acting otherwise than only by their periphery, e.g. by the front face; Bushings or mountings therefor
- B24D7/02—Wheels in one piece
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D7/00—Bonded abrasive wheels, or wheels with inserted abrasive blocks, designed for acting otherwise than only by their periphery, e.g. by the front face; Bushings or mountings therefor
- B24D7/10—Bonded abrasive wheels, or wheels with inserted abrasive blocks, designed for acting otherwise than only by their periphery, e.g. by the front face; Bushings or mountings therefor with cooling provisions
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B38/00—Porous mortars, concrete, artificial stone or ceramic ware; Preparation thereof
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B38/00—Porous mortars, concrete, artificial stone or ceramic ware; Preparation thereof
- C04B38/0051—Porous mortars, concrete, artificial stone or ceramic ware; Preparation thereof characterised by the pore size, pore shape or kind of porosity
- C04B38/0058—Porous mortars, concrete, artificial stone or ceramic ware; Preparation thereof characterised by the pore size, pore shape or kind of porosity open porosity
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
- C04B41/4584—Coating or impregnating of particulate or fibrous ceramic material
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
- C04B41/81—Coating or impregnation
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
- C04B41/81—Coating or impregnation
- C04B41/85—Coating or impregnation with inorganic materials
- C04B41/88—Metals
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1409—Abrasive particles per se
- C09K3/1418—Abrasive particles per se obtained by division of a mass agglomerated by sintering
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/10—Alloys containing non-metals
- C22C1/1005—Pretreatment of the non-metallic additives
- C22C1/1015—Pretreatment of the non-metallic additives by preparing or treating a non-metallic additive preform
- C22C1/1021—Pretreatment of the non-metallic additives by preparing or treating a non-metallic additive preform the preform being ceramic
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/10—Alloys containing non-metals
- C22C1/1036—Alloys containing non-metals starting from a melt
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
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Abstract
Description
Claims (19)
- 탄화규소결정(21, 22)에 의하여 구성되는 조직 중에 개방기공(23)이 존재하고 있는 다공질 소결체에 있어서, 상기 탄화규소결정의 평균 입자직경이 20㎛ ~ 100㎛, 기공율이 5% ~ 40%, 열전도율이 80W/m·K ~ 180W/m·K 인 다공질 탄화규소 소결체.
- 탄화규소결정(21, 22)에 의하여 구성되는 조직 중에 개방기공(23)이 존재하고 있는 다공질 소결체에 있어서, 상기 탄화규소결정의 평균 입자직경이 20㎛ ∼ 100㎛, 기공율이 5% ∼ 30%, 열전도율이 80W/m·K ~ 180W/m·K 인 다공질 탄화규소 소결체.
- 제 1 항 또는 제 2 항에 있어서, 탄화규소결정은, 평균 입자직경이 0.1㎛ ∼ 1.0㎛이고, 또한 10체적% ∼ 50체적%의 가는 탄화규소결정(21)과, 평균 입자직경이 25㎛ ∼ 150㎛이고, 또한 50체적% ∼ 90체적%의 굵은 탄화규소결정(22)을 포함하는 것을 특징으로 하는 다공질 탄화규소 소결체.
- 탄화규소결정(21, 22)에 의하여 구성되는 조직 중에 개방기공(23)이 존재하고, 상기 탄화규소결정의 평균 입자직경이 20㎛ ~ 100㎛, 기공율이 5% ~ 30%, 열전도율이 80W/m·K ~ 180W/m·K 인 다공질 탄화규소 소결체를 제조하는 방법으로서,평균 입자직경 5㎛ ∼ 100㎛의 α형 탄화규소의 조분말(粗粉末) 100중량부에 대하여, 평균 입자직경 0.1㎛ ∼ 1.0㎛의 α형 탄화규소의 미분말(微粉末)을 10중량부 ∼ 100중량부를 배합하고, 조분말과 미분말을 균일하게 혼합하는 공정과,상기 혼합공정에 의해 얻어진 혼합물을 소정형상으로 성형하여 성형체를 얻는 공정과,상기 성형체를 1700℃ ∼ 2400℃의 온도범위에서 소성하여 소결체를 얻는 공정을 구비한 것을 특징으로 하는 다공질 탄화규소 소결체의 제조방법.
- 웨이퍼 연마장치에 사용되는 부재(2)로서, 청구항 1 또는 2에 기재된 다공질 탄화규소 소결체로 구성되는 웨이퍼 연마장치용 부재.
- 웨이퍼 지지 플레이트에 지지되는 반도체 웨이퍼를 연마하기 위한 연마면(2a)을 가지는 테이블(2)에 있어서,테이블은, 각각이 청구항 1 또는 2에 기재된 다공질 탄화규소 소결체로 이루어지고, 서로 접합된 복수의 기재(基材; 11A, 11B)와,상기 기재의 접합계면(接合界面)에 형성된 유체유로(12)를 구비하는 웨이퍼 연마장치용 테이블.
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Applications Claiming Priority (6)
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JPJP-P-1999-00340408 | 1999-11-30 | ||
JP34040999A JP2001158680A (ja) | 1999-11-30 | 1999-11-30 | 炭化珪素・金属複合体及びその製造方法、並びにウェハ研磨装置用部材及びウェハ研磨装置用テーブル |
JP34040899A JP2001158674A (ja) | 1999-11-30 | 1999-11-30 | 多孔質炭化珪素焼結体及びその製造方法、並びにウェハ研磨装置用部材及びウェハ研磨装置用テーブル |
JPJP-P-1999-00340409 | 1999-11-30 | ||
JP2000126085 | 2000-04-26 | ||
JPJP-P-2000-00126085 | 2000-04-26 |
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KR10-2004-7017499A Division KR100507046B1 (ko) | 1999-11-30 | 2000-11-24 | 웨이퍼 연마장치용 테이블에 적합한 탄화규소·금속 복합체 |
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KR10-2001-7009596A KR100507049B1 (ko) | 1999-11-30 | 2000-11-24 | 웨이퍼 연마장치용 테이블에 적합한 다공질 탄화규소 소결체 |
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KR100734016B1 (ko) * | 2006-07-06 | 2007-06-29 | 주식회사 래디언테크 | 기판 재치대 및 이를 구비한 플라즈마 처리 장치 |
JP2008119819A (ja) | 2006-10-20 | 2008-05-29 | Jtekt Corp | 凹部入り砥石の製造方法 |
JP4999560B2 (ja) | 2007-06-07 | 2012-08-15 | 豊田バンモップス株式会社 | 研削盤における砥石軸装置 |
KR101090275B1 (ko) | 2009-03-13 | 2011-12-07 | 한국에너지기술연구원 | 뮬라이트 결합 탄화규소 세라믹스 소재 제조용 조성물, 세라믹스 및 그 제조방법 |
JP5551778B2 (ja) * | 2009-07-24 | 2014-07-16 | サン−ゴバン セラミックス アンド プラスティクス,インコーポレイティド | 乾湿低摩擦炭化ケイ素シール |
DE102009054574B3 (de) * | 2009-12-11 | 2011-03-03 | Sgl Carbon Se | Wärmetauscherrohr oder Wärmetauscherplatte mit offenporigem Siliciumcarbidnetzwerk und Verfahren zu deren Herstellung |
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JPH0733547A (ja) * | 1993-07-15 | 1995-02-03 | Idemitsu Material Kk | 多孔質炭化ケイ素焼結体の製造方法 |
JPH11320394A (ja) * | 1998-03-12 | 1999-11-24 | Ibiden Co Ltd | ウェハ研磨装置用ウェハ保持プレート及びその製造方法、並びに半導体ウェハの研磨方法 |
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EP0028802B1 (en) * | 1979-11-05 | 1983-08-17 | Hitachi, Ltd. | Electrically insulating substrate and a method of making such a substrate |
JPS6212667A (ja) * | 1985-07-09 | 1987-01-21 | 東芝セラミツクス株式会社 | 半導体用部材の製造方法 |
US4693988A (en) * | 1986-07-01 | 1987-09-15 | Kennecott Corporation | Single phase silicon carbide refractory |
JPH0768066B2 (ja) * | 1987-12-25 | 1995-07-26 | イビデン株式会社 | 耐熱性複合体及びその製造方法 |
JPH04238866A (ja) * | 1991-01-11 | 1992-08-26 | Shin Etsu Chem Co Ltd | 炭化ケイ素焼結体チューブの製造方法 |
JP2619319B2 (ja) * | 1991-06-18 | 1997-06-11 | ミンテック コーポレーション | 過酢酸−過酸化水素溶液のためのセンサー |
JPH05139861A (ja) * | 1991-11-13 | 1993-06-08 | Ibiden Co Ltd | 多孔質炭化珪素焼結体の製造方法 |
JPH05319932A (ja) * | 1992-05-22 | 1993-12-03 | Shin Etsu Chem Co Ltd | 炭化珪素質部材の製造方法 |
WO1993025495A1 (en) * | 1992-06-12 | 1993-12-23 | The Carborundum Company | Porous silicon carbide |
JP3201833B2 (ja) * | 1992-07-27 | 2001-08-27 | 東芝機械株式会社 | ポリッシング用加工定盤 |
JP3871421B2 (ja) * | 1997-12-15 | 2007-01-24 | 電気化学工業株式会社 | 複合体とそれを用いたヒ−トシンク |
JP2000007438A (ja) * | 1998-06-23 | 2000-01-11 | Ngk Insulators Ltd | 高抵抗再結晶炭化珪素、耐蝕性部材、高抵抗再結晶炭化珪素の製造方法および耐蝕性部材の製造方法 |
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- 2000-11-24 WO PCT/JP2000/008284 patent/WO2001040138A1/ja not_active Application Discontinuation
- 2000-11-24 KR KR10-2004-7017499A patent/KR100507046B1/ko active IP Right Grant
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JPH0733547A (ja) * | 1993-07-15 | 1995-02-03 | Idemitsu Material Kk | 多孔質炭化ケイ素焼結体の製造方法 |
JPH11320394A (ja) * | 1998-03-12 | 1999-11-24 | Ibiden Co Ltd | ウェハ研磨装置用ウェハ保持プレート及びその製造方法、並びに半導体ウェハの研磨方法 |
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KR100507046B1 (ko) | 2005-08-08 |
EP1174400A1 (en) | 2002-01-23 |
KR20020005582A (ko) | 2002-01-17 |
WO2001040138A1 (fr) | 2001-06-07 |
EP1174400A4 (en) | 2006-02-01 |
KR20040106426A (ko) | 2004-12-17 |
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