KR100497205B1 - 마이크로홀이 형성된 화학적 기계적 연마패드 - Google Patents
마이크로홀이 형성된 화학적 기계적 연마패드 Download PDFInfo
- Publication number
- KR100497205B1 KR100497205B1 KR10-2001-0046796A KR20010046796A KR100497205B1 KR 100497205 B1 KR100497205 B1 KR 100497205B1 KR 20010046796 A KR20010046796 A KR 20010046796A KR 100497205 B1 KR100497205 B1 KR 100497205B1
- Authority
- KR
- South Korea
- Prior art keywords
- polishing pad
- polishing
- micro
- chemical mechanical
- holes
- Prior art date
Links
- 238000005498 polishing Methods 0.000 title claims abstract description 83
- 239000000126 substance Substances 0.000 title claims abstract description 13
- 238000000034 method Methods 0.000 abstract description 22
- 238000007517 polishing process Methods 0.000 abstract description 17
- 239000002002 slurry Substances 0.000 description 14
- 238000005187 foaming Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 5
- 239000011159 matrix material Substances 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 2
- 230000003750 conditioning effect Effects 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000005553 drilling Methods 0.000 description 2
- 229920000728 polyester Polymers 0.000 description 2
- 238000003672 processing method Methods 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 1
- 239000002202 Polyethylene glycol Substances 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000203 mixture Chemical class 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 229920001277 pectin Polymers 0.000 description 1
- 239000001814 pectin Substances 0.000 description 1
- 235000010987 pectin Nutrition 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 229920000036 polyvinylpyrrolidone Polymers 0.000 description 1
- 239000001267 polyvinylpyrrolidone Substances 0.000 description 1
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 235000000346 sugar Nutrition 0.000 description 1
- 150000008163 sugars Chemical class 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/26—Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Polishing Bodies And Polishing Tools (AREA)
- Steroid Compounds (AREA)
Abstract
Description
Claims (7)
- 연마패드 상에 형성되어 일정한 연마율이 유지되도록 다양한 패턴으로 분포되어 있는 복수개의 마이크로 홀을 포함하며,상기 복수개의 마이크로홀은 각각 원형, 타원형, 삼각형, 사각형, 다각형 또는 별모양의 단면을 갖고, 상기 연마패드의 두께방향으로 10 ㎛2~10㎜2범위의 일정한 단면적을 가지며, 상기 연마패드의 두께에 대해 0.01 내지 1배의 깊이로 상기 연마패드 표면과 경사지게 형성된 것을 특징으로 하는 화학적 기계적 연마패드.
- 삭제
- 삭제
- 삭제
- 삭제
- 제1항에 있어서, 상기 연마패드는 둘 이상의 영역으로 분할되며, 분할된 각각의 영역에는 서로 다른 단면적, 형태 및/또는 밀도를 갖는 마이크로홀이 형성되는 것을 특징으로 하는 화학적 기계적 연마패드.
- 제1항에 있어서, 상기 복수개의 마이크로홀은 레이저로 가공하는 것을 특징으로 하는 화학적 기계적 연마패드.
Priority Applications (10)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2001-0046796A KR100497205B1 (ko) | 2001-08-02 | 2001-08-02 | 마이크로홀이 형성된 화학적 기계적 연마패드 |
CNB018236804A CN1312739C (zh) | 2001-08-02 | 2001-08-29 | 微孔化学机械抛光垫 |
PCT/KR2001/001463 WO2003012846A1 (en) | 2001-08-02 | 2001-08-29 | Chemical mechanical polishing pad with micro-holes |
AT01965709T ATE507580T1 (de) | 2001-08-02 | 2001-08-29 | Chemisches mechanisches polierstück mit mikrolöchern |
JP2003517928A JP2004537424A (ja) | 2001-08-02 | 2001-08-29 | マイクロ孔を有する化学的機械的研磨パッド |
EP01965709A EP1430520B1 (en) | 2001-08-02 | 2001-08-29 | Chemical mechanical polishing pad with micro-holes |
DE60144538T DE60144538D1 (de) | 2001-08-02 | 2001-08-29 | Chemisches mechanisches polierstück mit mikrolöchern |
US10/110,801 US20040048559A1 (en) | 2001-08-02 | 2001-08-29 | Chemical mechanical polishing pad with micro-holes |
TW090125417A TW592888B (en) | 2001-08-02 | 2001-10-15 | Chemical mechanical polishing pad with micro-holes |
US11/651,197 US20070173187A1 (en) | 2001-02-08 | 2007-01-08 | Chemical mechanical polishing pad with micro-holes |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2001-0046796A KR100497205B1 (ko) | 2001-08-02 | 2001-08-02 | 마이크로홀이 형성된 화학적 기계적 연마패드 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20030012655A KR20030012655A (ko) | 2003-02-12 |
KR100497205B1 true KR100497205B1 (ko) | 2005-06-23 |
Family
ID=19712816
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR10-2001-0046796A KR100497205B1 (ko) | 2001-02-08 | 2001-08-02 | 마이크로홀이 형성된 화학적 기계적 연마패드 |
Country Status (9)
Country | Link |
---|---|
US (2) | US20040048559A1 (ko) |
EP (1) | EP1430520B1 (ko) |
JP (1) | JP2004537424A (ko) |
KR (1) | KR100497205B1 (ko) |
CN (1) | CN1312739C (ko) |
AT (1) | ATE507580T1 (ko) |
DE (1) | DE60144538D1 (ko) |
TW (1) | TW592888B (ko) |
WO (1) | WO2003012846A1 (ko) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2011013894A1 (ko) * | 2009-07-30 | 2011-02-03 | 서강대학교 산학협력단 | 기공이 형성된 cmp 연마패드와 그의 제조방법 |
KR101186531B1 (ko) * | 2009-03-24 | 2012-10-08 | 차윤종 | 폴리우레탄 다공질체의 제조방법과 그 제조방법에 따른 폴리우레탄 다공질체 및 폴리우레탄 다공질체를 구비한 연마패드 |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6794605B2 (en) * | 2001-08-02 | 2004-09-21 | Skc Co., Ltd | Method for fabricating chemical mechanical polshing pad using laser |
US6998166B2 (en) * | 2003-06-17 | 2006-02-14 | Cabot Microelectronics Corporation | Polishing pad with oriented pore structure |
TWI385050B (zh) * | 2005-02-18 | 2013-02-11 | Nexplanar Corp | 用於cmp之特製拋光墊及其製造方法及其用途 |
US7867302B2 (en) * | 2005-02-22 | 2011-01-11 | Saint-Gobain Abrasives, Inc. | Rapid tooling system and methods for manufacturing abrasive articles |
US7524345B2 (en) * | 2005-02-22 | 2009-04-28 | Saint-Gobain Abrasives, Inc. | Rapid tooling system and methods for manufacturing abrasive articles |
US7875091B2 (en) * | 2005-02-22 | 2011-01-25 | Saint-Gobain Abrasives, Inc. | Rapid tooling system and methods for manufacturing abrasive articles |
US20070010175A1 (en) * | 2005-07-07 | 2007-01-11 | San Fang Chemical Industry Co., Ltd. | Polishing pad and method of producing same |
US20070111644A1 (en) * | 2005-09-27 | 2007-05-17 | Spencer Preston | Thick perforated polishing pad and method for making same |
US7569268B2 (en) * | 2007-01-29 | 2009-08-04 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing pad |
KR101177497B1 (ko) * | 2009-07-01 | 2012-08-27 | 서강대학교산학협력단 | 기공이 형성된 cmp 연마패드 및 기공의 형성방법 |
KR101044279B1 (ko) * | 2009-07-30 | 2011-06-28 | 서강대학교산학협력단 | Cmp 연마패드와 그의 제조방법 |
JP5484145B2 (ja) * | 2010-03-24 | 2014-05-07 | 東洋ゴム工業株式会社 | 研磨パッド |
WO2012071259A1 (en) * | 2010-11-23 | 2012-05-31 | Taiwan Green Point Enterprises Co., Ltd. | Method and structure of binding plastic and metal material together |
CN114589619B (zh) * | 2020-12-03 | 2023-04-25 | 中国科学院微电子研究所 | 半导体研磨垫及制备方法 |
TWI767689B (zh) * | 2021-05-05 | 2022-06-11 | 健行學校財團法人健行科技大學 | 微細孔拋光裝置 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100191227B1 (ko) * | 1992-08-19 | 1999-06-15 | 콘라드 에이취. 캐딩 | 중합체성 미소요소를 포함하는 연마패드,당행 패드와의 접촉에 의해 평면화된 반도체장치 및 연마 패드의 가공 표면의 재생방법 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2668016B2 (ja) * | 1988-09-21 | 1997-10-27 | スピードファム株式会社 | ポリッシングパッド及びその製造方法 |
US5020283A (en) * | 1990-01-22 | 1991-06-04 | Micron Technology, Inc. | Polishing pad with uniform abrasion |
US5329734A (en) * | 1993-04-30 | 1994-07-19 | Motorola, Inc. | Polishing pads used to chemical-mechanical polish a semiconductor substrate |
JP3042593B2 (ja) * | 1995-10-25 | 2000-05-15 | 日本電気株式会社 | 研磨パッド |
JPH10329007A (ja) * | 1997-05-28 | 1998-12-15 | Sony Corp | 化学的機械研磨装置 |
JPH1199468A (ja) * | 1997-09-29 | 1999-04-13 | Toshiba Corp | 研磨パッド及びそれを用いた研磨装置 |
JP2907209B1 (ja) * | 1998-05-29 | 1999-06-21 | 日本電気株式会社 | ウェハ研磨装置用裏面パッド |
KR20000025003A (ko) * | 1998-10-07 | 2000-05-06 | 윤종용 | 반도체 기판의 화학 기계적 연마에 사용되는 연마 패드 |
JP2001071256A (ja) * | 1999-08-31 | 2001-03-21 | Shinozaki Seisakusho:Kk | 研磨パッドの溝形成方法及び装置並びに研磨パッド |
-
2001
- 2001-08-02 KR KR10-2001-0046796A patent/KR100497205B1/ko active IP Right Grant
- 2001-08-29 DE DE60144538T patent/DE60144538D1/de not_active Expired - Lifetime
- 2001-08-29 CN CNB018236804A patent/CN1312739C/zh not_active Expired - Lifetime
- 2001-08-29 EP EP01965709A patent/EP1430520B1/en not_active Expired - Lifetime
- 2001-08-29 WO PCT/KR2001/001463 patent/WO2003012846A1/en active Application Filing
- 2001-08-29 AT AT01965709T patent/ATE507580T1/de not_active IP Right Cessation
- 2001-08-29 JP JP2003517928A patent/JP2004537424A/ja active Pending
- 2001-08-29 US US10/110,801 patent/US20040048559A1/en not_active Abandoned
- 2001-10-15 TW TW090125417A patent/TW592888B/zh not_active IP Right Cessation
-
2007
- 2007-01-08 US US11/651,197 patent/US20070173187A1/en not_active Abandoned
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100191227B1 (ko) * | 1992-08-19 | 1999-06-15 | 콘라드 에이취. 캐딩 | 중합체성 미소요소를 포함하는 연마패드,당행 패드와의 접촉에 의해 평면화된 반도체장치 및 연마 패드의 가공 표면의 재생방법 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101186531B1 (ko) * | 2009-03-24 | 2012-10-08 | 차윤종 | 폴리우레탄 다공질체의 제조방법과 그 제조방법에 따른 폴리우레탄 다공질체 및 폴리우레탄 다공질체를 구비한 연마패드 |
WO2011013894A1 (ko) * | 2009-07-30 | 2011-02-03 | 서강대학교 산학협력단 | 기공이 형성된 cmp 연마패드와 그의 제조방법 |
Also Published As
Publication number | Publication date |
---|---|
CN1312739C (zh) | 2007-04-25 |
EP1430520B1 (en) | 2011-04-27 |
WO2003012846A1 (en) | 2003-02-13 |
TW592888B (en) | 2004-06-21 |
EP1430520A4 (en) | 2008-04-09 |
CN1559082A (zh) | 2004-12-29 |
KR20030012655A (ko) | 2003-02-12 |
EP1430520A1 (en) | 2004-06-23 |
ATE507580T1 (de) | 2011-05-15 |
JP2004537424A (ja) | 2004-12-16 |
US20070173187A1 (en) | 2007-07-26 |
US20040048559A1 (en) | 2004-03-11 |
DE60144538D1 (de) | 2011-06-09 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR100497205B1 (ko) | 마이크로홀이 형성된 화학적 기계적 연마패드 | |
KR100442807B1 (ko) | 레이저 빔과 마스크를 이용한 연마패드의 제조방법 | |
US7255633B2 (en) | Radial-biased polishing pad | |
US6903021B2 (en) | Method of polishing a semiconductor device | |
US6641471B1 (en) | Polishing pad having an advantageous micro-texture and methods relating thereto | |
KR100646702B1 (ko) | 홀 및/또는 그루브로 형성된 화학적 기계적 연마패드 | |
JP4798713B2 (ja) | 研磨パッドの製造方法 | |
JP3425894B2 (ja) | 加工品の表面を平坦化する方法 | |
JP3801998B2 (ja) | 加工品を研磨又は平坦化するための製品 | |
KR20050095818A (ko) | 웨이브 형태의 그루브가 형성된 화학적 기계적 연마패드 | |
JP4219940B2 (ja) | 研磨パッド |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
N231 | Notification of change of applicant | ||
AMND | Amendment | ||
E902 | Notification of reason for refusal | ||
AMND | Amendment | ||
E601 | Decision to refuse application | ||
J201 | Request for trial against refusal decision | ||
AMND | Amendment | ||
E902 | Notification of reason for refusal | ||
B701 | Decision to grant | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20130205 Year of fee payment: 9 |
|
FPAY | Annual fee payment |
Payment date: 20131213 Year of fee payment: 10 |
|
FPAY | Annual fee payment |
Payment date: 20160328 Year of fee payment: 12 |
|
FPAY | Annual fee payment |
Payment date: 20170217 Year of fee payment: 13 |
|
FPAY | Annual fee payment |
Payment date: 20171208 Year of fee payment: 14 |
|
FPAY | Annual fee payment |
Payment date: 20190618 Year of fee payment: 15 |