KR100228570B1 - 반도체 기판 노출 방법 - Google Patents
반도체 기판 노출 방법 Download PDFInfo
- Publication number
- KR100228570B1 KR100228570B1 KR1019960009558A KR19960009558A KR100228570B1 KR 100228570 B1 KR100228570 B1 KR 100228570B1 KR 1019960009558 A KR1019960009558 A KR 1019960009558A KR 19960009558 A KR19960009558 A KR 19960009558A KR 100228570 B1 KR100228570 B1 KR 100228570B1
- Authority
- KR
- South Korea
- Prior art keywords
- exposure
- reticle
- resist film
- exposing
- area
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
- G03F7/2026—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure for the removal of unwanted material, e.g. image or background correction
- G03F7/2028—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure for the removal of unwanted material, e.g. image or background correction of an edge bead on wafers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/70466—Multiple exposures, e.g. combination of fine and coarse exposures, double patterning or multiple exposures for printing a single feature
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7072593A JP2858543B2 (ja) | 1995-03-30 | 1995-03-30 | 露光方法 |
JP95-72593 | 1995-03-30 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR960035141A KR960035141A (ko) | 1996-10-24 |
KR100228570B1 true KR100228570B1 (ko) | 1999-11-01 |
Family
ID=13493857
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019960009558A KR100228570B1 (ko) | 1995-03-30 | 1996-03-30 | 반도체 기판 노출 방법 |
Country Status (3)
Country | Link |
---|---|
US (1) | US5919605A (ja) |
JP (1) | JP2858543B2 (ja) |
KR (1) | KR100228570B1 (ja) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR19990030953A (ko) * | 1997-10-07 | 1999-05-06 | 윤종용 | 웨이퍼 노광방법 |
US6080533A (en) * | 1998-03-10 | 2000-06-27 | Clear Logic, Inc. | Method of patterning photoresist using precision and non-precision techniques |
US6613500B1 (en) * | 2001-04-02 | 2003-09-02 | Advanced Micro Devices, Inc. | Reducing resist residue defects in open area on patterned wafer using trim mask |
JP2006278820A (ja) * | 2005-03-30 | 2006-10-12 | Nikon Corp | 露光方法及び装置 |
JP4753234B2 (ja) * | 2005-07-07 | 2011-08-24 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
JP4928979B2 (ja) * | 2007-02-23 | 2012-05-09 | 株式会社東芝 | 露光装置およびリソグラフィシステム |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2715462B2 (ja) * | 1988-08-29 | 1998-02-18 | 日本電気株式会社 | レチクル及びこれを用いる半導体装置の製造方法 |
JPH02263426A (ja) * | 1989-04-04 | 1990-10-26 | Canon Inc | 露光装置 |
JPH03237459A (ja) * | 1990-02-14 | 1991-10-23 | Fujitsu Ltd | 半導体ウエハの露光方法およびステップ露光用レチクル |
-
1995
- 1995-03-30 JP JP7072593A patent/JP2858543B2/ja not_active Expired - Fee Related
-
1996
- 1996-03-29 US US08/626,238 patent/US5919605A/en not_active Expired - Fee Related
- 1996-03-30 KR KR1019960009558A patent/KR100228570B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
JP2858543B2 (ja) | 1999-02-17 |
US5919605A (en) | 1999-07-06 |
KR960035141A (ko) | 1996-10-24 |
JPH08274000A (ja) | 1996-10-18 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US5459000A (en) | Image projection method and device manufacturing method using the image projection method | |
US4657379A (en) | Photomask and exposure apparatus using the same | |
US5926257A (en) | Illumination optical system and exposure apparatus having the same | |
JPH09167735A (ja) | 投影露光装置及びそれを用いた半導体デバイスの製造方法 | |
JP3200244B2 (ja) | 走査型露光装置 | |
US6738129B2 (en) | Illumination apparatus, exposure apparatus, and device fabricating method using the same | |
JPH06124872A (ja) | 像形成方法及び該方法を用いて半導体装置を製造する方法 | |
KR100228570B1 (ko) | 반도체 기판 노출 방법 | |
US5747221A (en) | Photolithography method and photolithography system for performing the method | |
JP3599648B2 (ja) | 照明装置、投影露光装置並びにそれを用いたデバイス製造方法 | |
JPH09134870A (ja) | パターン形成方法および形成装置 | |
US5793472A (en) | Exposure method using reference marks on both the mask and the substrate and capable of providing high alignment precision even after multiple exposures | |
JPH07297117A (ja) | 投影露光装置及びそれを用いた半導体デバイスの製造方法 | |
JPH06181167A (ja) | 像形成方法及び該方法を用いてデバイスを製造する方法及び該方法に用いるフォトマスク | |
JP2000114164A (ja) | 走査型投影露光装置及びそれを用いたデバイスの製造方法 | |
KR20010007452A (ko) | 노광방법, 노광장치 및 반도체디바이스의 제조방법 | |
US20040009431A1 (en) | Method of exposing semiconductor device | |
JP3770959B2 (ja) | 投影型ステッパ露光装置およびそれを用いた露光方法 | |
JP3977096B2 (ja) | マスク、露光方法及びデバイス製造方法 | |
JP3376043B2 (ja) | 照明装置及びそれを用いた投影露光装置 | |
JPH01293616A (ja) | 半導体集積回路の製造方法 | |
JP2004071650A (ja) | 露光方法 | |
JP3571945B2 (ja) | 照明装置及びそれを用いた投影露光装置 | |
US20240069447A1 (en) | Buttressed field target design for optical and e-beam based metrology to enable first layer print registration measurements for field shape matching and reticle stitching in high na lithography | |
JPH0645221A (ja) | 投影露光装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
G170 | Publication of correction | ||
FPAY | Annual fee payment |
Payment date: 20030807 Year of fee payment: 5 |
|
LAPS | Lapse due to unpaid annual fee |