KR100228570B1 - 반도체 기판 노출 방법 - Google Patents

반도체 기판 노출 방법 Download PDF

Info

Publication number
KR100228570B1
KR100228570B1 KR1019960009558A KR19960009558A KR100228570B1 KR 100228570 B1 KR100228570 B1 KR 100228570B1 KR 1019960009558 A KR1019960009558 A KR 1019960009558A KR 19960009558 A KR19960009558 A KR 19960009558A KR 100228570 B1 KR100228570 B1 KR 100228570B1
Authority
KR
South Korea
Prior art keywords
exposure
reticle
resist film
exposing
area
Prior art date
Application number
KR1019960009558A
Other languages
English (en)
Korean (ko)
Other versions
KR960035141A (ko
Inventor
유찌야마 다까유끼
Original Assignee
가네꼬 히사시
닛본덴끼 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가네꼬 히사시, 닛본덴끼 가부시키가이샤 filed Critical 가네꼬 히사시
Publication of KR960035141A publication Critical patent/KR960035141A/ko
Application granted granted Critical
Publication of KR100228570B1 publication Critical patent/KR100228570B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • G03F7/2026—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure for the removal of unwanted material, e.g. image or background correction
    • G03F7/2028—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure for the removal of unwanted material, e.g. image or background correction of an edge bead on wafers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70466—Multiple exposures, e.g. combination of fine and coarse exposures, double patterning or multiple exposures for printing a single feature

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1019960009558A 1995-03-30 1996-03-30 반도체 기판 노출 방법 KR100228570B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP7072593A JP2858543B2 (ja) 1995-03-30 1995-03-30 露光方法
JP95-72593 1995-03-30

Publications (2)

Publication Number Publication Date
KR960035141A KR960035141A (ko) 1996-10-24
KR100228570B1 true KR100228570B1 (ko) 1999-11-01

Family

ID=13493857

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019960009558A KR100228570B1 (ko) 1995-03-30 1996-03-30 반도체 기판 노출 방법

Country Status (3)

Country Link
US (1) US5919605A (ja)
JP (1) JP2858543B2 (ja)
KR (1) KR100228570B1 (ja)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19990030953A (ko) * 1997-10-07 1999-05-06 윤종용 웨이퍼 노광방법
US6080533A (en) * 1998-03-10 2000-06-27 Clear Logic, Inc. Method of patterning photoresist using precision and non-precision techniques
US6613500B1 (en) * 2001-04-02 2003-09-02 Advanced Micro Devices, Inc. Reducing resist residue defects in open area on patterned wafer using trim mask
JP2006278820A (ja) * 2005-03-30 2006-10-12 Nikon Corp 露光方法及び装置
JP4753234B2 (ja) * 2005-07-07 2011-08-24 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP4928979B2 (ja) * 2007-02-23 2012-05-09 株式会社東芝 露光装置およびリソグラフィシステム

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2715462B2 (ja) * 1988-08-29 1998-02-18 日本電気株式会社 レチクル及びこれを用いる半導体装置の製造方法
JPH02263426A (ja) * 1989-04-04 1990-10-26 Canon Inc 露光装置
JPH03237459A (ja) * 1990-02-14 1991-10-23 Fujitsu Ltd 半導体ウエハの露光方法およびステップ露光用レチクル

Also Published As

Publication number Publication date
JP2858543B2 (ja) 1999-02-17
US5919605A (en) 1999-07-06
KR960035141A (ko) 1996-10-24
JPH08274000A (ja) 1996-10-18

Similar Documents

Publication Publication Date Title
US5459000A (en) Image projection method and device manufacturing method using the image projection method
US4657379A (en) Photomask and exposure apparatus using the same
US5926257A (en) Illumination optical system and exposure apparatus having the same
JPH09167735A (ja) 投影露光装置及びそれを用いた半導体デバイスの製造方法
JP3200244B2 (ja) 走査型露光装置
US6738129B2 (en) Illumination apparatus, exposure apparatus, and device fabricating method using the same
JPH06124872A (ja) 像形成方法及び該方法を用いて半導体装置を製造する方法
KR100228570B1 (ko) 반도체 기판 노출 방법
US5747221A (en) Photolithography method and photolithography system for performing the method
JP3599648B2 (ja) 照明装置、投影露光装置並びにそれを用いたデバイス製造方法
JPH09134870A (ja) パターン形成方法および形成装置
US5793472A (en) Exposure method using reference marks on both the mask and the substrate and capable of providing high alignment precision even after multiple exposures
JPH07297117A (ja) 投影露光装置及びそれを用いた半導体デバイスの製造方法
JPH06181167A (ja) 像形成方法及び該方法を用いてデバイスを製造する方法及び該方法に用いるフォトマスク
JP2000114164A (ja) 走査型投影露光装置及びそれを用いたデバイスの製造方法
KR20010007452A (ko) 노광방법, 노광장치 및 반도체디바이스의 제조방법
US20040009431A1 (en) Method of exposing semiconductor device
JP3770959B2 (ja) 投影型ステッパ露光装置およびそれを用いた露光方法
JP3977096B2 (ja) マスク、露光方法及びデバイス製造方法
JP3376043B2 (ja) 照明装置及びそれを用いた投影露光装置
JPH01293616A (ja) 半導体集積回路の製造方法
JP2004071650A (ja) 露光方法
JP3571945B2 (ja) 照明装置及びそれを用いた投影露光装置
US20240069447A1 (en) Buttressed field target design for optical and e-beam based metrology to enable first layer print registration measurements for field shape matching and reticle stitching in high na lithography
JPH0645221A (ja) 投影露光装置

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
G170 Publication of correction
FPAY Annual fee payment

Payment date: 20030807

Year of fee payment: 5

LAPS Lapse due to unpaid annual fee