JPWO2020230900A1 - 半導体装置および半導体装置の製造方法 - Google Patents
半導体装置および半導体装置の製造方法 Download PDFInfo
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Abstract
Description
特許文献1 特開2007−266233号公報
特許文献2 特開2005−064429号公報
(1−θ+)/α´+1≦κ≦(1−θ−)/α´+1
ただし、α´=NA0/NF0、NF0はN型領域のドナー濃度の目標値であってよい。
NF0=NH−NA0 ・・・式(1)
一方、実際のドナー濃度NFreは、水素ドナー濃度NHと、実際のバルク・アクセプタ濃度NAreとの差分であるので、下式で与えられる。
NFre=NH−NAre ・・・式(2)
κ=NAre/NA0 ・・・式(3)
パラメータκは、実際のバルク・アクセプタ濃度NAreと仕様値NA0との比であり、1から離れるほど実際のバルク・アクセプタ濃度NAreが仕様値NA0からずれていることを示す。なお、κは仕様値NA0に対する実際のバルク・アクセプタ濃度NAreの割合であるので0<κとする。
θ=NFre/NF0 ・・・式(4)
パラメータθは、実際のドナー濃度NFreと目標値NF0との比であり、1から離れるほど実際のドナー濃度NFreが目標値NF0からずれていることを示す。つまり、θが十分に1に近ければ、実際のバルク・アクセプタ濃度NAreが仕様値NA0に対してκ倍ずれた場合でも、κにほとんど依らずに、実際のドナー濃度NFreが目標値NF0とほぼ一致していることを示している。なお、θは目標値NF0に対する実際のドナー濃度NFreの割合であるので0<θとする。
・中性子照射FZウエハ・・・±8%(比では0.92から1.08)
・ガスドープFZウエハ・・・±12%(比では0.88から1.12)
このばらつきを参考にして、例えばθが0.85以上、1.15以下であれば、最終的なドナー濃度NFreのばらつきが、上述したFZ法のシリコンウエハのバルク・ドナー濃度と同程度になる。本明細書では、一例としてθの許容値を0.85以上、1.15以下とする。
NA0=α´×NF0 ・・・式(5)
ただし、α´はNF0に対するNFreの割合であるので0<α´である。また、バルク・アクセプタ濃度の設定値NA0が水素ドナー濃度NH以上だと、ドナー濃度NFreが負となり、N型領域120がP型になってしまう。このため、バルク・アクセプタ濃度の設定値NA0は、ドナー濃度NHより小さい。
α=1/α´ ・・・式(6)
式(5)および式(6)から、下式が得られる。
NA0=NF0/α ・・・式(7)
式(1)に式(7)を代入して、下式が得られる。
NF0=NH−NF0/α つまり、NH=(1+1/α)NF0 ・・・式(8)
式(2)に式(8)および式(3)を代入して、下式が得られる。
NFre=(1+1/α)NF0−κNA0 ・・・式(9)
式(9)に式(7)を代入して、下式が得られる。
NFre=(1+1/α)NF0−κ(1/α)NF0
=(1+1/α−κ/α)NF0 ・・・式(10)
式(4)に式(10)を代入して、下式が得られる。
θ=1+1/α−κ/α
=1−(κ―1)/α ・・・式(11)
式(6)および式(11)から、下式が得られる。
θ=1−α´(κ―1) ・・・式(12)
(範囲A)
α´が0.5以下。α´が0.5の場合、κが0.7〜1.3の範囲内であれば、θが許容範囲内となる。ドナー濃度の目標値NF0が1×1014/cm3であり、α´が0.001の場合、バルク・アクセプタ濃度の仕様値NA0は1×1011/cm3であり、約126000Ωcmの比抵抗に相当する。
α´が0.333以下。α´が0.333の場合、κが0.5〜1.4の範囲内であれば、θが許容範囲内となる。ドナー濃度の目標値NF0が1×1014/cm3であり、α´が0.01の場合、バルク・アクセプタ濃度の仕様値NA0は1×1012/cm3であり、約12600Ωcmの比抵抗に相当する。
α´が0.25以下。α´が0.25の場合、κが0.3〜1.6の範囲内であれば、θが許容範囲内となる。ドナー濃度の目標値NF0が1×1014/cm3であり、α´が0.03の場合、バルク・アクセプタ濃度の仕様値NA0は3×1012/cm3であり、約4210Ωcmの比抵抗に相当する。
α´が0.2以下。α´が0.2の場合、κが0.1〜1.8の範囲内であれば、θが許容範囲内となる。ドナー濃度の目標値NF0が1×1014/cm3であり、α´が0.1の場合、バルク・アクセプタ濃度の仕様値NA0は1×1013/cm3であり、約1260Ωcmの比抵抗に相当する。
α´が0.1以下。α´が0.1の場合、θの許容範囲の下限値0.85に対しては、κが2.5以下であれば、θは許容範囲内となる。また、θの許容範囲の上限値1.15に対しては、κが0.1でもθは十分許容範囲内となる。
α´が0.05以下。α´が0.05の場合、θの許容範囲の下限値0.8に対しては、κが4以下であれば、θは許容範囲内となる。また、θの許容範囲の上限値1.15に対しては、κが0.1でもθは十分許容範囲内となる。
α´が0.03以下。α´が0.03の場合、θの許容範囲の下限値0.85に対しては、κが6以下であれば、θは許容範囲内となる。また、θの許容範囲の上限値1.15に対しては、κが0.1でもθは十分許容範囲内となる。
α´が0.01以下。α´が0.01の場合、θの許容範囲の下限値0.85に対しては、κが10でもθは十分許容範囲内となる。また、θの許容範囲の上限値1.15に対しては、κが0.1でもθは十分許容範囲内となる。
α´が0.001以上。ドナー濃度の目標値NF0を1×1014/cm3とすると、α´が0.001の場合、バルク・アクセプタ濃度の仕様値NA0は1×1011/cm3であり、約126000Ωcmの比抵抗に相当する。
α´が0.01以上。ドナー濃度の目標値NF0を1×1014/cm3とすると、α´が0.01の場合、バルク・アクセプタ濃度の仕様値NA0は1×1012/cm3であり、約12600Ωcmの比抵抗に相当する。
α´が0.03以上。ドナー濃度の目標値NF0を1×1014/cm3とすると、α´が0.03の場合、バルク・アクセプタ濃度の仕様値NA0は3×1012/cm3であり、約4210Ωcmの比抵抗に相当する。
α´が0.05以上。ドナー濃度の目標値NF0を1×1014/cm3とすると、α´が0.05の場合、バルク・アクセプタ濃度の仕様値NA0は5×1012/cm3であり、約2530Ωcmの比抵抗に相当する。
κ=(1−θ)/α´+1 ・・・式(13A)
式(13A)において、本例のズレ割合θは、上限値(本例では1.15)または下限値(本例では0.85)である。
κ=−θ0/α´+1 ・・・式(13B)
式(13B)において、本例の許容範囲θ0は15%(すなわち−15%以上、15%以下)である。ズレ割合θの上限値は1.15、下限値は0.85である。式(13B)でθ0の符号を−としているのは、式(13A)のズレ割合θの上限値および下限値と、式(13B)の許容範囲θ0の上限値および下限値を、それぞれ対応させるためである。
κ=−0.15/α´+1 (θ=1.15) ・・・式(13C)
κ=0.15/α´+1 (θ=0.85) ・・・式(13D)
ω=NHre/NH0 ・・・式(14)
NH0=(1+1/α)NF0 ・・・式(8B)
となり、式(9)は、
NFre=ω(1+1/α)NF0−κNA0 ・・・式(9B)
となり、式(10)は、
NFre=ω(1+1/α)NF0−κ(1/α)NF0
={ω(1+1/α)−κ/α}NF0 ・・・式(10B)
となる。
θ=ω+ω/α−κ/α
=ω−(κ―ω)/α ・・・式(11B)
式(6)および式(11)から、下式が得られる。
θ=ω−α´(κ―ω) ・・・式(12B)
κ=(1−θ0/ω)(ω/α´)+ω ・・・式(15)
式(15)においてパラメータωを1とおけば、式(15)は式(13)と同じになる。
・下限114:(9.20245×1012)/x
・上限113:(4.60123×1016)/x
・下限114:(9.20245×1013)/x
・上限113:(3.06442×1016)/x
・下限114:(2.76074×1014)/x
・上限113:(2.30061×1016)/x
・下限114:(9.20245×1014)/x
・上限113:(1.84049×1016)/x
・下限114:(9.20245×1012)/x
・上限113:(9.20245×1015)/x
・下限114:(1.84049×1013)/x
・上限113:(4.60123×1015)/x
・下限114:(4.60123×1013)/x
・上限113:(1.84049×1015)/x
・下限114:(9.20245×1013)/x
・上限113:(9.20245×1014)/x
なお、各範囲における上限113および下限114は、±20%の幅を有してよい。
(1−θ+)/α´+1≦κ≦(1−θ−)/α´+1
ただし、α´=NA0/NF0、NF0はN型領域のドナー濃度の目標値であってよい。
NA0=α´×NF0 ・・・式(5)
ただし、α´はNF0に対するN A0 の割合であるので0<α´である。また、バルク・アクセプタ濃度の仕様値N A0 が水素ドナー濃度NH以上だと、ドナー濃度NFreが負となり、N型領域120がP型になってしまう。このため、バルク・アクセプタ濃度の仕様値N A0 は、ドナー濃度NHより小さい。
α´が0.05以下。α´が0.05の場合、θの許容範囲の下限値0.85に対しては、κが4以下であれば、θは許容範囲内となる。また、θの許容範囲の上限値1.15に対しては、κが0.1でもθは十分許容範囲内となる。
κ=(1−θ)/α´+1 ・・・式(13A)
式(13A)において、本例のズレ割合θは、上限値(本例では1.15)または下限値(本例では0.85)である。
・下限114:(9.20245×1013)/x
・上限113:(9.20245×1014)/x
なお、各範囲における上限113および下限114は、±20%の幅を有してよい。
Claims (17)
- N型領域が設けられた半導体基板を備え、
前記N型領域は、前記半導体基板の深さ方向における中央位置を含む領域であり、
前記N型領域は、前記中央位置において、キャリア濃度より低濃度であって、キャリア濃度の0.001倍以上の濃度のアクセプタを含む半導体装置。 - 前記N型領域は、前記中央位置において、キャリア濃度の0.9倍未満の濃度のアクセプタを含む
請求項1に記載の半導体装置。 - 前記N型領域は、前記中央位置において、前記キャリア濃度の0.1倍未満の濃度の前記アクセプタを含む
請求項1または2に記載の半導体装置。 - 前記N型領域は、前記中央位置において、1.0×1011/cm3以上、1.0×1015/cm3以下の濃度の前記アクセプタを含む
請求項1から3のいずれか一項に記載の半導体装置。 - 前記半導体基板は、前記N型領域の全体において、前記キャリア濃度の0.001倍以上、0.9倍未満の濃度の前記アクセプタを含む
請求項1から4のいずれか一項に記載の半導体装置。 - 前記N型領域は、前記深さ方向において、前記半導体基板の厚みの40%以上の長さを有する
請求項5に記載の半導体装置。 - 前記半導体基板は、
トランジスタ部およびダイオード部の少なくとも一方が形成された活性領域と、
前記半導体基板の上面視において前記活性領域を囲んで設けられ、P型のガードリングが複数形成されたエッジ終端構造部と
を有し、
2つの前記ガードリングの間には、前記キャリア濃度の0.001倍以上、0.9倍未満の濃度の前記アクセプタを含む前記N型領域が設けられている
請求項1から6のいずれか一項に記載の半導体装置。 - 前記半導体基板の側壁と接しない範囲に、前記N型領域が設けられている
請求項1から6のいずれか一項に記載の半導体装置。 - 前記N型領域において、ドナー濃度NFに対するバルク・アクセプタ濃度NAの割合NA/NFが、0.5以下である
請求項1から8のいずれか一項に記載の半導体装置。 - 前記N型領域において、バルク・アクセプタ濃度の目標値NA0に対する実際のバルク・アクセプタ濃度NAreの割合κを、κ=NAre/NA0とし、
最終ドナー濃度の目標値NF0に対する実際のドナー濃度NFreの割合θを、θ=NFre/NF0として、前記θの上限値をθ+とし、前記θの下限値をθ−とし、前記θ+は1.15であり、前記θ−は0.85であり、
前記割合κおよび前記θの上限値θ+およびθ−が、下式を満たし、
(1−θ+)/α´+1≦κ≦(1−θ−)/α´+1
ただし、α´=NA0/NF0、NF0は前記N型領域のドナー濃度の目標値である
請求項1から9のいずれか一項に記載の半導体装置。 - 前記半導体基板は、
上面に設けられたトレンチ部と、
前記トレンチ部の下端に接したP型領域と
を有する
請求項1から10のいずれか一項に記載の半導体装置。 - P型の半導体基板を準備する準備段階と、
前記P型の半導体基板にドナーを注入して熱処理することで、前記半導体基板の深さ方向における中央位置を含むN型領域を形成する第1反転段階と
を備える半導体装置の製造方法。 - P型基板を薄化して前記P型の半導体基板を形成する薄化段階を含む
請求項12に記載の半導体装置の製造方法。 - 前記第1反転段階において、前記P型の半導体基板の上面側および下面側の2つの深さ位置に水素イオンを注入して熱処理する
請求項12または13に記載の半導体装置の製造方法。 - 前記第1反転段階において、前記P型の半導体基板の上面側のウェル領域にドナーを注入し、前記P型の半導体基板の下面から前記ウェル領域に水素イオンを注入して熱処理する
請求項12または13に記載の半導体装置の製造方法。 - 前記第1反転段階において、前記P型の半導体基板の上面側に硫黄またはセレンを注入して熱処理する
請求項12または13に記載の半導体装置の製造方法。 - 前記N型領域にアクセプタを注入して、P型領域を形成する第2反転段階を更に備える
請求項12から16のいずれか一項に記載の半導体装置の製造方法。
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