JPWO2012108054A1 - 単結晶基板の製造方法および内部改質層形成単結晶部材の製造方法 - Google Patents
単結晶基板の製造方法および内部改質層形成単結晶部材の製造方法 Download PDFInfo
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- 239000013078 crystal Substances 0.000 title claims abstract description 237
- 239000000758 substrate Substances 0.000 title claims abstract description 103
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 41
- 230000004075 alteration Effects 0.000 claims abstract description 11
- 230000001678 irradiating effect Effects 0.000 claims abstract description 10
- 239000002184 metal Substances 0.000 claims description 35
- 238000000034 method Methods 0.000 claims description 28
- 238000012937 correction Methods 0.000 claims description 5
- 239000010410 layer Substances 0.000 description 153
- 229910052710 silicon Inorganic materials 0.000 description 51
- 239000010703 silicon Substances 0.000 description 51
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 50
- 239000000853 adhesive Substances 0.000 description 33
- 230000001070 adhesive effect Effects 0.000 description 33
- 238000012360 testing method Methods 0.000 description 11
- 230000002093 peripheral effect Effects 0.000 description 10
- 230000000052 comparative effect Effects 0.000 description 9
- 238000012545 processing Methods 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 9
- 240000004050 Pentaglottis sempervirens Species 0.000 description 8
- 235000004522 Pentaglottis sempervirens Nutrition 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 8
- 238000012986 modification Methods 0.000 description 7
- 230000004048 modification Effects 0.000 description 7
- 230000003287 optical effect Effects 0.000 description 7
- 239000011521 glass Substances 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- 238000003776 cleavage reaction Methods 0.000 description 5
- 230000007017 scission Effects 0.000 description 5
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 5
- 238000010521 absorption reaction Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229910010271 silicon carbide Inorganic materials 0.000 description 4
- 239000004925 Acrylic resin Substances 0.000 description 3
- 229920000178 Acrylic resin Polymers 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- 238000000879 optical micrograph Methods 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 3
- 238000001237 Raman spectrum Methods 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000005238 degreasing Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910021645 metal ion Inorganic materials 0.000 description 2
- 239000000178 monomer Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- 229920001651 Cyanoacrylate Polymers 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- MWCLLHOVUTZFKS-UHFFFAOYSA-N Methyl cyanoacrylate Chemical compound COC(=O)C(=C)C#N MWCLLHOVUTZFKS-UHFFFAOYSA-N 0.000 description 1
- 244000137852 Petrea volubilis Species 0.000 description 1
- 239000004830 Super Glue Substances 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 238000005422 blasting Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 239000006059 cover glass Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- FGBJXOREULPLGL-UHFFFAOYSA-N ethyl cyanoacrylate Chemical compound CCOC(=O)C(=C)C#N FGBJXOREULPLGL-UHFFFAOYSA-N 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 239000003999 initiator Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000010297 mechanical methods and process Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000005488 sandblasting Methods 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
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-
- H—ELECTRICITY
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- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
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Abstract
Description
まず、第1実施形態について説明する。図1は、本実施形態で、レーザ集光手段により空気中でレーザ光を集光したことを説明する模式的鳥瞰図であり、図2は、本実施形態で、レーザ集光手段により単結晶部材内部にレーザ光を集光したことを説明する模式的鳥瞰図である。図3は、本実施形態に係る単結晶基板製造方法および内部改質層形成単結晶部材11を説明する模式的断面構造である。図4は、レーザ光の照射により単結晶部材内部にクラック12cが形成されていることを示す模式的断面図である。図5は、内部改質層形成単結晶部材11の側壁に、レーザ光の集光によって形成された改質層12を露出させたことを示す模式的斜視断面図である。
集光レンズ15と単結晶部材10とを相対的に移動させて単結晶部材10内部に改質層12を形成する工程としては、例えば、単結晶部材10をXYステージ(図示せず)上に載置し、真空チャック、静電チャックなどでこの単結晶部材10を保持する。
この後、改質層12と単結晶層10uとの剥離を行う。本実施形態では、まず、内部改質層形成単結晶部材11の側壁に改質層12を露出させる。露出させるには、例えば、単結晶部10d、単結晶層10uの所定の結晶面に沿ってへき開する。この結果、図5に示すように、単結晶層10uと単結晶部10dとによって改質層12が挟まれた構造のものが得られる。なお、単結晶層10uの表面10tはレーザ光Bの被照射側の面である。
本発明者は、単結晶部材10として鏡面研磨した単結晶のシリコンウェハ10(厚み625μm)を準備した。そして、実施例1として、このシリコンウェハ10をXYステージに載置し、シリコンウェハ10のレーザ光の被照射側の表面10tからの0.34mmの距離に、第2レンズ18として第2平凸レンズ18を配置した。この第2平凸レンズ18は、曲率半径7.8mm、厚み3.8mm、屈折率1.58のレンズである。また、第1レンズ16としてNAが0.55の第1平凸レンズ16を配置した。
また、本発明者は、試験例1で用いたシリコンウェハ10と同様のシリコンウェハを用い、実施例1の実施条件で改質層12を形成してなる内部改質層形成単結晶部材11を製造した。そして、金属製基板28u、28dを用いて単結晶層10uを剥離し、単結晶基板10sを得た。この単結晶基板10sの剥離面10fをレーザ共焦点顕微鏡で観察したところ、図14に示す計測図が得られ、粒径50〜100μmの凹凸が剥離面10fに形成されていることが確認された。ここで、図14では、横軸が凹凸寸法(μm表示)であり、縦軸が表面粗さ(%表示)である。
(実施例4)
本発明者は、単結晶部材10として両面を鏡面研磨した単結晶のシリコンウェハ10(厚み625μm)を準備した。そして、実施例4として、このシリコンウェハ10をXYステージに載置し、波長1064nmのパルスレーザ光を照射し、一辺が5mmの平面視正方形状の改質層12を形成した。そして、このシリコンウェハ(内部改質層形成単結晶部材)をへき開することで改質層12の断面を露出させ、この断面を走査型電子顕微鏡で観察した。改質層12の厚みTは30μmであった。
また、本発明者は、実施例4で用いたシリコンウェハと同様のシリコンウェハを用い、以下のようにして比較例の試験を行った。図16は、本比較例で、レーザ集光手段により空気中でレーザ光を集光したことを説明する模式的鳥瞰図である。比較例では、実施例4に比べ、レーザ集光手段として、集光レンズ15に代えて集光レンズ115が配置されている。本比較例で用いるこの集光レンズ115は、平凸レンズである第1レンズ116と、第1レンズ116とシリコンウェハ100表面との間に配置された収差増強用のガラス板118と、で構成される。この収差増強用のガラス板118をこのように配置することによって、被照射体であるシリコンウェハ100の表面にレーザスポットSPを形成するレーザ光Bは、シリコンウェハ表面100tで屈折されてレーザ光としてシリコンウェハ内部に進入し、シリコンウェハ内部に集光点を結ぶ際に、所定の深さ位置および幅を有する像を結ぶことになる。すなわち、シリコンウェハ内部に改質層112(加工領域)を所定の深さ位置に所定の厚みVで形成することができる。ここで収差増強用のガラス板118によって収差が増強されているので、この所定の厚みVは、実施例4の改質層12の厚みTよりも大きくなる。
次に、第2実施形態について説明する。図17は、本実施形態に係る単結晶基板製造方法および内部改質層形成単結晶部材を説明する上で用いる単結晶部材内部加工装置の模式的鳥瞰図である。
10u 単結晶層
10d 単結晶部
10s 単結晶基板
10t 表面
10b 表面
10f 剥離面
11 内部改質層形成単結晶部材
11u 界面
12 改質層
12p クラック部
15 集光レンズ(レーザ集光手段)
28u 金属製基板
29u 酸化層
B レーザ光
BC 照射軸
E 外周部
M 中央部
L1 距離
L2 距離
T 厚み
Claims (10)
- レーザ光を出射するとともに単結晶部材の屈折率に起因する収差を補正するレーザ集光手段を、前記単結晶部材上に非接触に配置する工程と、
前記レーザ集光手段により、前記単結晶部材表面にレーザ光を照射して前記単結晶部材内部に前記レーザ光を集光する工程と、
前記レーザ集光手段と前記単結晶部材とを相対的に移動させて、前記単結晶部材内部に、2次元状の改質層を形成する工程と、
前記改質層により分断されてなる単結晶層を前記改質層から剥離することで単結晶基板を形成する工程と
を有することを特徴とする単結晶基板の製造方法。 - 前記改質層として、前記レーザ光の照射軸と平行なクラック部の集合体を形成することを特徴とする請求項1に記載の単結晶基板の製造方法。
- 前記剥離によって形成された剥離面が粗面であることを特徴とする請求項2に記載の単結晶基板の製造方法。
- 前記単結晶基板を形成する工程では、前記改質層の両面側のうち前記レーザ光を照射する側の界面から剥離することを特徴とする請求項1に記載の単結晶基板の製造方法。
- 前記単結晶基板を形成する工程では、表面に酸化層を有する金属製基板を前記単結晶層の表面に接着して剥離することを特徴とする請求項1に記載の単結晶基板の製造方法。
- 前記レーザ集光手段は、空気中で集光した際に、前記レーザ集光手段の外周部に到達した光線が前記レーザ集光手段の中央部に到達した光線よりも前記レーザ集光手段側で集光するように補正することを特徴とする請求項1に記載の単結晶基板の製造方法。
- 前記レーザ集光手段は、
空気中で集光する第1のレンズと、
前記第1のレンズと前記単結晶部材との間に配置される第2のレンズと、
を含むことを特徴とする請求項6に記載の単結晶基板の製造方法。 - レーザ光が照射される側の前記単結晶部材表面から前記改質層までの距離を、前記第1のレンズと該単結晶部材表面との距離で調整することを特徴とする請求項7に記載の単結晶基板の製造方法。
- 前記改質層の厚みを、レーザ光が照射される側の前記単結晶部材表面と前記第2のレンズとの距離で調整することを特徴とする請求項8に記載の単結晶基板の製造方法。
- 単結晶部材に表面からレーザ光を照射して内部で集光することで前記単結晶部材の内部に改質層を形成し、前記改質層から単結晶基板を剥離するための内部改質層形成単結晶部材の製造方法であって、
レーザ光を出射するとともに単結晶部材の屈折率に起因する収差を補正するレーザ集光手段とを、前記単結晶部材上に非接触に配置する工程と、
前記レーザ集光手段により、前記単結晶部材表面にレーザ光を照射して前記単結晶部材内部に前記レーザ光を集光する工程と、
前記レーザ集光手段と前記単結晶部材とを相対的に移動させて、前記単結晶部材内部に、2次元状の改質層を形成する工程と
を有することを特徴とする、内部改質層形成単結晶部材の製造方法。
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