JPWO2005036621A1 - 基板搬送装置及び基板搬送方法、露光装置及び露光方法、デバイス製造方法 - Google Patents
基板搬送装置及び基板搬送方法、露光装置及び露光方法、デバイス製造方法 Download PDFInfo
- Publication number
- JPWO2005036621A1 JPWO2005036621A1 JP2005514600A JP2005514600A JPWO2005036621A1 JP WO2005036621 A1 JPWO2005036621 A1 JP WO2005036621A1 JP 2005514600 A JP2005514600 A JP 2005514600A JP 2005514600 A JP2005514600 A JP 2005514600A JP WO2005036621 A1 JPWO2005036621 A1 JP WO2005036621A1
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- liquid
- exposure
- light
- optical system
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
- H01L21/67709—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations using magnetic elements
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
- G03B27/00—Photographic printing apparatus
- G03B27/32—Projection printing apparatus, e.g. enlarger, copying camera
- G03B27/42—Projection printing apparatus, e.g. enlarger, copying camera for automatic sequential copying of the same original
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03D—APPARATUS FOR PROCESSING EXPOSED PHOTOGRAPHIC MATERIALS; ACCESSORIES THEREFOR
- G03D3/00—Liquid processing apparatus involving immersion; Washing apparatus involving immersion
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70733—Handling masks and workpieces, e.g. exchange of workpiece or mask, transport of workpiece or mask
- G03F7/7075—Handling workpieces outside exposure position, e.g. SMIF box
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
- H01L21/67718—Changing orientation of the substrate, e.g. from a horizontal position to a vertical position
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67748—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber horizontal transfer of a single workpiece
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67751—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber vertical transfer of a single workpiece
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Health & Medical Sciences (AREA)
- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
Abstract
Description
本願は、2003年10月8日に出願された特願2003−349550号に対し優先権を主張し、その内容をここに援用する。
R=k1・λ/NA …(1)
δ=±k2・λ/NA2 …(2)
ここで、λは露光波長、NAは投影光学系の開口数、k1、k2はプロセス係数である。(1)式、(2)式より、解像度Rを高めるために、露光波長λを短くして、開口数NAを大きくすると、焦点深度δが狭くなることが分かる。
本発明の基板搬送装置(H)は、投影光学系(PL)と液体(LQ)とを介したパターンの像によって露光された基板(P)を搬送する基板搬送装置において、基板(P)に付着した液体(LQ)を検出する液体検出器(80、90)を備えたことを特徴とする。
また本発明の基板搬送方法は、投影光学系(PL)と液体(LQ)とを介したパターンの像によって露光された基板(P)を搬送する基板搬送方法において、基板(P)の搬送経路の途中で、基板(P)に付着した液体(LQ)を検出することを特徴とする。
また本発明の露光方法は、基板ステージ(PST)に保持された基板(P)に、投影光学系(PL)と液体(LQ)とを介してパターンの像を投影して、基板(P)を露光する露光方法において、上記記載の基板搬送方法を用いて、基板ステージ(PST)から基板(P)を搬送する工程を有することを特徴とする。
また本発明のデバイス製造方法は、上記記載の露光方法を用いることを特徴とする。
塗布装置Cから露光前の基板Pが第3アーム部材H3によってプリアライメント部PALに渡される。プリアライメント部PALは露光前の基板Pの大まかな位置合わせを行う。次いで、撮像装置80が位置合わせをされた露光前の基板Pの表面を撮像する。こうして、露光前の基板Pの表面に関する第1情報(撮像情報)が取得される(ステップS1)。取得された基板Pの表面に関する第1情報は制御装置CONTに記憶される。
露光処理後の基板Pの表面に関する第2情報を取得した後、露光処理後の基板Pを保持した第2アーム部材H2は、カバー部材70の内部に開口部71より進入し、露光処理後の基板Pを保持テーブルHTに搬送する。
基板Pの表面に液体LQが付着しているときの撮像状態と付着していないときの撮像状態とは互いに異なるので、制御装置CONTは露光前の基板P表面の撮像情報と露光後の基板P表面の撮像情報とを比較することにより、液体LQが付着してるか否かを検出することができる。また、ステップS1の撮像時の基板Pの位置とステップS3の撮像時の基板Pの位置とが合致していれば、制御装置CONTは、基板Pに付着している液体(液滴)の位置に関する情報や、その液滴の大きさに関する情報も求めることができる。
ステップS5においてしきい値以下であると判断した場合、制御装置CONTは液体除去動作は不要であると判断し、第4アーム部材H4などを使って保持テーブルHTから基板Pをインターフェース部IFを介して現像装置Dに搬送する。つまり、基板P上に付着している液体LQの量が僅か(しきい値以下)であってデバイス性能やプロセス処理(現像処理)に影響を与えない程度であれば、制御装置CONTは液体除去動作は不要であると判断する。これにより、基板Pに液体LQが付着していないにもかかわらず液体除去システム100を使って再び液体除去動作を行うことを防止し、作業効率を向上することができる。なお上記しきい値は予め実験などによって求められ、制御装置CONTに記憶されている。
ステップS4において、基板P上に付着している液体LQの量(液滴の大きさ)や位置情報が検出されているため、制御装置CONTは、例えば付着している液体LQの量(液滴の大きさ)に基づいて、吹付ノズル103より吹き付ける気体の流速(単位時間あたり吹き付ける気体量)や吹き付け時間を設定する。あるいは、基板Pに付着している液体LQの位置情報に基づいて、吹付ノズル103で気体を吹き付ける基板P上の位置を設定する。こうすることにより、例えば付着している液体量が少ない場合には、液体除去動作時間(気体吹き付け時間)を短時間に設定して作業時間を短縮でき、一方、付着している液体量が多い場合には、液体除去動作時間(気体吹き付け時間)を長時間に設定して液体LQを確実に除去することができる。
液体検出器90は、基板Pの表面に付着している液体LQを光学的に検出するものであって、露光後の基板Pの表面に対して検出光を照射する照射系91と、基板Pの表面で反射した検出光を受光する受光系92とを備えている。なおここでは、基板Pをプリアライメント部PALで保持した状態でその基板Pに検出光を照射するが、基板Pの搬送経路のうちプリアライメント部PALとは別の位置に設けられた所定の保持部材に保持した状態で検出光を照射してもよい。
Claims (18)
- 投影光学系と液体とを介したパターンの像によって露光された基板を搬送する基板搬送装置において、
前記基板に付着した前記液体を検出する液体検出器を備えたことを特徴とする基板搬送装置。 - 前記液体検出器の検出結果に基づいて、前記基板に付着した液体を除去するか否かを判定する判定装置を有することを特徴とする請求項1記載の基板搬送装置。
- 前記判定装置の判定結果に基づいて、前記基板に付着した液体を除去する除去装置を有することを特徴とする請求項2記載の基板搬送装置。
- 前記除去装置は、前記液体検出器の検出結果に基づいて、前記基板に付着した液体を除去する除去条件を設定することを特徴とする請求項3記載の基板搬送装置。
- 前記除去条件は、前記液体を除去するために必要な時間を含むことを特徴とする請求項4記載の基板搬送装置。
- 前記液体検出器は、前記基板の露光前における基板表面に関する第1情報と、前記基板の露光後における基板表面に関する第2情報とを比較して、前記液体を検出することを特徴とする請求項1から請求項5のいずれか一項記載の基板搬送装置。
- 前記第1情報は、前記基板の露光前における前記基板表面を撮像した撮像情報であり、前記第2情報は、前記基板の露光後における前記基板表面を撮像した撮像情報であることを特徴とする請求項6記載の基板搬送装置。
- 前記第1情報は前記基板表面の反射率情報を含み、前記第2情報は前記基板表面の反射率情報と前記液体の反射率情報とを含むことを特徴とする請求項6又は7記載の基板搬送装置。
- 前記液体検出器は、前記基板の露光後における前記基板表面に対して検出光を照射する照射部と、前記基板表面で反射した前記検出光を受光する受光部とを有することを特徴とする請求項1から請求項5のいずれか一項記載の基板搬送装置。
- 基板ステージに保持された基板に、投影光学系と液体とを介してパターンの像を投影して、前記基板を露光する露光装置において、
請求項1から請求項9のいずれか一項記載の基板搬送装置を用いて、前記基板ステージから前記基板を搬送することを特徴とする露光装置。 - 投影光学系と液体とを介したパターンの像によって露光された基板を搬送する基板搬送方法において、
前記基板の搬送経路の途中で、前記基板に付着した前記液体を検出することを特徴とする基板搬送方法。 - 前記液体の検出結果に基づいて、前記基板に付着した液体を除去するか否かを判定することを特徴とする請求項11記載の基板搬送方法。
- 前記判定結果に基づいて、前記基板に付着した液体を除去することを特徴とする請求項12記載の基板搬送方法。
- 前記液体の検出結果に基づいて、前記基板に付着した液体を除去する除去条件を設定することを特徴とする請求項13記載の基板搬送方法。
- 前記液体の検出は、前記基板の露光前における前記基板表面と前記基板の露光後における前記基板表面とを比較して行うことを特徴とする請求項11から請求項14のいずれか一項記載の基板搬送方法。
- 前記液体の検出は、前記基板の露光後における前記基板表面に対して検出光を照射するとともに、前記基板表面で反射した前記検出光を受光し、前記受光結果に基づいて行うことを特徴とする請求項11から請求項15のいずれか一項記載の基板搬送方法。
- 基板ステージに保持された基板に、投影光学系と液体とを介してパターンの像を投影して、前記基板を露光する露光方法において、
請求項11から請求項16のいずれか一項記載の基板搬送方法を用いて、前記基板ステージから前記基板を搬送する工程を有することを特徴とする露光方法。 - 請求項17記載の露光方法を用いることを特徴とするデバイス製造方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003349550 | 2003-10-08 | ||
JP2003349550 | 2003-10-08 | ||
PCT/JP2004/014855 WO2005036621A1 (ja) | 2003-10-08 | 2004-10-07 | 基板搬送装置及び基板搬送方法、露光装置及び露光方法、デバイス製造方法 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009013518A Division JP5079717B2 (ja) | 2003-10-08 | 2009-01-23 | 基板搬送装置及び基板搬送方法、露光装置及び露光方法、デバイス製造装置及びデバイス製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2005036621A1 true JPWO2005036621A1 (ja) | 2007-11-22 |
JP4319188B2 JP4319188B2 (ja) | 2009-08-26 |
Family
ID=34431007
Family Applications (4)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005514600A Expired - Fee Related JP4319188B2 (ja) | 2003-10-08 | 2004-10-07 | 基板搬送装置及び基板搬送方法、露光装置及び露光方法、デバイス製造装置及びデバイス製造方法 |
JP2009013518A Expired - Fee Related JP5079717B2 (ja) | 2003-10-08 | 2009-01-23 | 基板搬送装置及び基板搬送方法、露光装置及び露光方法、デバイス製造装置及びデバイス製造方法 |
JP2011126741A Expired - Fee Related JP5634947B2 (ja) | 2003-10-08 | 2011-06-06 | 基板搬送装置、露光装置、基板搬送方法、及び処理方法 |
JP2012079587A Pending JP2012138623A (ja) | 2003-10-08 | 2012-03-30 | 基板搬送装置及び基板搬送方法、露光装置及び露光方法、デバイス製造装置及びデバイス製造方法 |
Family Applications After (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009013518A Expired - Fee Related JP5079717B2 (ja) | 2003-10-08 | 2009-01-23 | 基板搬送装置及び基板搬送方法、露光装置及び露光方法、デバイス製造装置及びデバイス製造方法 |
JP2011126741A Expired - Fee Related JP5634947B2 (ja) | 2003-10-08 | 2011-06-06 | 基板搬送装置、露光装置、基板搬送方法、及び処理方法 |
JP2012079587A Pending JP2012138623A (ja) | 2003-10-08 | 2012-03-30 | 基板搬送装置及び基板搬送方法、露光装置及び露光方法、デバイス製造装置及びデバイス製造方法 |
Country Status (8)
Country | Link |
---|---|
US (5) | US8345216B2 (ja) |
EP (1) | EP1672681B8 (ja) |
JP (4) | JP4319188B2 (ja) |
KR (4) | KR101203028B1 (ja) |
AT (1) | ATE509367T1 (ja) |
HK (1) | HK1090174A1 (ja) |
TW (2) | TW200523684A (ja) |
WO (1) | WO2005036621A1 (ja) |
Families Citing this family (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101203028B1 (ko) | 2003-10-08 | 2012-11-21 | 가부시키가이샤 자오 니콘 | 기판 반송 장치 및 기판 반송 방법, 노광 장치 및 노광 방법, 디바이스 제조 방법 |
JP4194495B2 (ja) * | 2004-01-07 | 2008-12-10 | 東京エレクトロン株式会社 | 塗布・現像装置 |
KR101227211B1 (ko) | 2004-02-03 | 2013-01-28 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법 |
US7616383B2 (en) | 2004-05-18 | 2009-11-10 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7463330B2 (en) | 2004-07-07 | 2008-12-09 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
CN101044594B (zh) | 2004-10-26 | 2010-05-12 | 株式会社尼康 | 衬底处理方法、曝光装置及器件制造方法 |
TW200625026A (en) * | 2004-12-06 | 2006-07-16 | Nikon Corp | Substrate processing method, method of exposure, exposure device and device manufacturing method |
KR101479392B1 (ko) | 2005-04-28 | 2015-01-05 | 가부시키가이샤 니콘 | 노광 방법 및 노광 장치, 그리고 디바이스 제조 방법 |
US7522258B2 (en) * | 2005-06-29 | 2009-04-21 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method utilizing movement of clean air to reduce contamination |
KR20080015778A (ko) * | 2005-06-29 | 2008-02-20 | 가부시키가이샤 니콘 | 노광 장치, 기판 처리 방법, 및 디바이스 제조 방법 |
JP2007109741A (ja) * | 2005-10-11 | 2007-04-26 | Canon Inc | 露光装置及び露光方法 |
US7929109B2 (en) | 2005-10-20 | 2011-04-19 | Nikon Corporation | Apparatus and method for recovering liquid droplets in immersion lithography |
JP2007264114A (ja) * | 2006-03-27 | 2007-10-11 | Nikon Corp | 液浸顕微鏡装置 |
CN101385125B (zh) * | 2006-05-22 | 2011-04-13 | 株式会社尼康 | 曝光方法及装置、维修方法、以及组件制造方法 |
JP2008066341A (ja) | 2006-09-04 | 2008-03-21 | Canon Inc | 搬送装置、露光装置及び方法 |
US9632425B2 (en) | 2006-12-07 | 2017-04-25 | Asml Holding N.V. | Lithographic apparatus, a dryer and a method of removing liquid from a surface |
JP4758977B2 (ja) * | 2006-12-07 | 2011-08-31 | エーエスエムエル ネザーランズ ビー.ブイ. | リソグラフィ投影装置、デバイス製造方法 |
US8228482B2 (en) * | 2008-05-13 | 2012-07-24 | Nikon Corporation | Exposure apparatus, exposure method, and device manufacturing method |
JP2010147335A (ja) * | 2008-12-19 | 2010-07-01 | Canon Inc | 残留液体除去方法、それを用いた露光装置及びデバイスの製造方法 |
NL2005528A (en) * | 2009-12-02 | 2011-06-07 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method. |
JP2015082570A (ja) * | 2013-10-22 | 2015-04-27 | 株式会社ディスコ | ウエーハ加工システム |
CN110520800B (zh) | 2017-04-20 | 2021-10-15 | Asml荷兰有限公司 | 对流体处理结构进行性能测试的方法 |
TWI831656B (zh) * | 2018-01-04 | 2024-02-01 | 日商東京威力科創股份有限公司 | 基板處理裝置及基板處理方法 |
Family Cites Families (198)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3727620A (en) * | 1970-03-18 | 1973-04-17 | Fluoroware Of California Inc | Rinsing and drying device |
US4346164A (en) | 1980-10-06 | 1982-08-24 | Werner Tabarelli | Photolithographic method for the manufacture of integrated circuits |
JPS57117238A (en) * | 1981-01-14 | 1982-07-21 | Nippon Kogaku Kk <Nikon> | Exposing and baking device for manufacturing integrated circuit with illuminometer |
JPS57153433A (en) | 1981-03-18 | 1982-09-22 | Hitachi Ltd | Manufacturing device for semiconductor |
JPH0695511B2 (ja) * | 1986-09-17 | 1994-11-24 | 大日本スクリ−ン製造株式会社 | 洗浄乾燥処理方法 |
US5274434A (en) * | 1990-04-02 | 1993-12-28 | Hitachi, Ltd. | Method and apparatus for inspecting foreign particles on real time basis in semiconductor mass production line |
JP2897355B2 (ja) * | 1990-07-05 | 1999-05-31 | 株式会社ニコン | アライメント方法,露光装置,並びに位置検出方法及び装置 |
JP2577140B2 (ja) * | 1991-05-27 | 1997-01-29 | 日立テクノエンジニアリング株式会社 | 基板の位置合わせ装置 |
JPH05340885A (ja) * | 1992-06-08 | 1993-12-24 | Matsushita Electric Ind Co Ltd | パーティクル検査方法 |
JPH06124873A (ja) * | 1992-10-09 | 1994-05-06 | Canon Inc | 液浸式投影露光装置 |
JP2753930B2 (ja) * | 1992-11-27 | 1998-05-20 | キヤノン株式会社 | 液浸式投影露光装置 |
JP3412704B2 (ja) * | 1993-02-26 | 2003-06-03 | 株式会社ニコン | 投影露光方法及び装置、並びに露光装置 |
US5874820A (en) | 1995-04-04 | 1999-02-23 | Nikon Corporation | Window frame-guided stage mechanism |
US5528118A (en) | 1994-04-01 | 1996-06-18 | Nikon Precision, Inc. | Guideless stage with isolated reaction stage |
JP3555230B2 (ja) * | 1994-05-18 | 2004-08-18 | 株式会社ニコン | 投影露光装置 |
US5623853A (en) | 1994-10-19 | 1997-04-29 | Nikon Precision Inc. | Precision motion stage with single guide beam and follower stage |
JPH08316124A (ja) | 1995-05-19 | 1996-11-29 | Hitachi Ltd | 投影露光方法及び露光装置 |
US6012966A (en) * | 1996-05-10 | 2000-01-11 | Canon Kabushiki Kaisha | Precision polishing apparatus with detecting means |
US5684296A (en) * | 1996-06-17 | 1997-11-04 | Optical Systems Industries, Inc. | Fiber optic liquid sensing system |
US6610683B2 (en) * | 1996-09-12 | 2003-08-26 | Idun Pharmaceuticals, Inc. | Treatment of infectious disease using interleukin-1β-converting enzyme (ICE)/CED-3 family inhibitors |
US5825043A (en) | 1996-10-07 | 1998-10-20 | Nikon Precision Inc. | Focusing and tilting adjustment system for lithography aligner, manufacturing apparatus or inspection apparatus |
DE69738910D1 (de) * | 1996-11-28 | 2008-09-25 | Nikon Corp | Ausrichtvorrichtung und belichtungsverfahren |
WO1998028665A1 (en) | 1996-12-24 | 1998-07-02 | Koninklijke Philips Electronics N.V. | Two-dimensionally balanced positioning device with two object holders, and lithographic device provided with such a positioning device |
JPH1116816A (ja) * | 1997-06-25 | 1999-01-22 | Nikon Corp | 投影露光装置、該装置を用いた露光方法、及び該装置を用いた回路デバイスの製造方法 |
US6020964A (en) * | 1997-12-02 | 2000-02-01 | Asm Lithography B.V. | Interferometer system and lithograph apparatus including an interferometer system |
US6208407B1 (en) * | 1997-12-22 | 2001-03-27 | Asm Lithography B.V. | Method and apparatus for repetitively projecting a mask pattern on a substrate, using a time-saving height measurement |
TW389973B (en) * | 1998-03-12 | 2000-05-11 | United Microelectronics Corp | Method for inspecting wafer defects |
AU2747999A (en) * | 1998-03-26 | 1999-10-18 | Nikon Corporation | Projection exposure method and system |
JP3542914B2 (ja) * | 1998-11-18 | 2004-07-14 | 東芝セラミックス株式会社 | 半導体ウェーハの不純物分析方法およびこの方法に用いられる試料作製装置 |
JP2000180371A (ja) * | 1998-12-11 | 2000-06-30 | Sharp Corp | 異物検査装置および半導体工程装置 |
US6281962B1 (en) * | 1998-12-17 | 2001-08-28 | Tokyo Electron Limited | Processing apparatus for coating substrate with resist and developing exposed resist including inspection equipment for inspecting substrate and processing method thereof |
JP3918401B2 (ja) | 1999-05-31 | 2007-05-23 | 株式会社日立ハイテクノロジーズ | 基板乾燥装置及び乾燥方法、並びに基板の製造方法 |
US6827816B1 (en) * | 1999-12-16 | 2004-12-07 | Applied Materials, Inc. | In situ module for particle removal from solid-state surfaces |
US6995930B2 (en) | 1999-12-29 | 2006-02-07 | Carl Zeiss Smt Ag | Catadioptric projection objective with geometric beam splitting |
US7187503B2 (en) | 1999-12-29 | 2007-03-06 | Carl Zeiss Smt Ag | Refractive projection objective for immersion lithography |
JP2001284210A (ja) * | 2000-03-30 | 2001-10-12 | Canon Inc | 露光装置、デバイス製造方法、半導体製造工場および露光装置の保守方法 |
US20020041377A1 (en) * | 2000-04-25 | 2002-04-11 | Nikon Corporation | Aerial image measurement method and unit, optical properties measurement method and unit, adjustment method of projection optical system, exposure method and apparatus, making method of exposure apparatus, and device manufacturing method |
US6970362B1 (en) * | 2000-07-31 | 2005-11-29 | Intel Corporation | Electronic assemblies and systems comprising interposer with embedded capacitors |
KR100866818B1 (ko) | 2000-12-11 | 2008-11-04 | 가부시키가이샤 니콘 | 투영광학계 및 이 투영광학계를 구비한 노광장치 |
WO2002091078A1 (en) | 2001-05-07 | 2002-11-14 | Massachusetts Institute Of Technology | Methods and apparatus employing an index matching medium |
US6538823B2 (en) * | 2001-06-19 | 2003-03-25 | Lucent Technologies Inc. | Tunable liquid microlens |
JP4040270B2 (ja) * | 2001-06-25 | 2008-01-30 | 東京エレクトロン株式会社 | 基板の処理装置 |
KR100452317B1 (ko) * | 2001-07-11 | 2004-10-12 | 삼성전자주식회사 | 포토리소그래피 공정시스템 및 그 방법 |
US7092069B2 (en) | 2002-03-08 | 2006-08-15 | Carl Zeiss Smt Ag | Projection exposure method and projection exposure system |
DE10229818A1 (de) | 2002-06-28 | 2004-01-15 | Carl Zeiss Smt Ag | Verfahren zur Fokusdetektion und Abbildungssystem mit Fokusdetektionssystem |
DE10210899A1 (de) | 2002-03-08 | 2003-09-18 | Zeiss Carl Smt Ag | Refraktives Projektionsobjektiv für Immersions-Lithographie |
JP4117530B2 (ja) * | 2002-04-04 | 2008-07-16 | セイコーエプソン株式会社 | 液量判定装置、露光装置、および液量判定方法 |
AU2003228973A1 (en) * | 2002-05-07 | 2003-11-11 | Memgen Corporation | Electrochemically fabricated hermetically sealed microstructures |
US7362508B2 (en) | 2002-08-23 | 2008-04-22 | Nikon Corporation | Projection optical system and method for photolithography and exposure apparatus and method using same |
US6954993B1 (en) | 2002-09-30 | 2005-10-18 | Lam Research Corporation | Concentric proximity processing head |
US6988326B2 (en) | 2002-09-30 | 2006-01-24 | Lam Research Corporation | Phobic barrier meniscus separation and containment |
US7093375B2 (en) | 2002-09-30 | 2006-08-22 | Lam Research Corporation | Apparatus and method for utilizing a meniscus in substrate processing |
US7367345B1 (en) | 2002-09-30 | 2008-05-06 | Lam Research Corporation | Apparatus and method for providing a confined liquid for immersion lithography |
US7383843B2 (en) | 2002-09-30 | 2008-06-10 | Lam Research Corporation | Method and apparatus for processing wafer surfaces using thin, high velocity fluid layer |
US6788477B2 (en) | 2002-10-22 | 2004-09-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | Apparatus for method for immersion lithography |
SG121822A1 (en) | 2002-11-12 | 2006-05-26 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
CN101424881B (zh) | 2002-11-12 | 2011-11-30 | Asml荷兰有限公司 | 光刻投射装置 |
TWI232357B (en) | 2002-11-12 | 2005-05-11 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
SG121819A1 (en) | 2002-11-12 | 2006-05-26 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
DE60335595D1 (de) | 2002-11-12 | 2011-02-17 | Asml Netherlands Bv | Lithographischer Apparat mit Immersion und Verfahren zur Herstellung einer Vorrichtung |
US7110081B2 (en) | 2002-11-12 | 2006-09-19 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
DE10253679A1 (de) | 2002-11-18 | 2004-06-03 | Infineon Technologies Ag | Optische Einrichtung zur Verwendung bei einem Lithographie-Verfahren, insbesondere zur Herstellung eines Halbleiter-Bauelements, sowie optisches Lithographieverfahren |
SG131766A1 (en) | 2002-11-18 | 2007-05-28 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
DE10258718A1 (de) | 2002-12-09 | 2004-06-24 | Carl Zeiss Smt Ag | Projektionsobjektiv, insbesondere für die Mikrolithographie, sowie Verfahren zur Abstimmung eines Projektionsobjektives |
JP4352874B2 (ja) | 2002-12-10 | 2009-10-28 | 株式会社ニコン | 露光装置及びデバイス製造方法 |
EP1429190B1 (en) | 2002-12-10 | 2012-05-09 | Canon Kabushiki Kaisha | Exposure apparatus and method |
EP1571694A4 (en) | 2002-12-10 | 2008-10-15 | Nikon Corp | EXPOSURE APPARATUS AND METHOD FOR MANUFACTURING THE DEVICE |
JP4184346B2 (ja) | 2002-12-13 | 2008-11-19 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 層上のスポットを照射するための方法及び装置における液体除去 |
USRE48515E1 (en) | 2002-12-19 | 2021-04-13 | Asml Netherlands B.V. | Method and device for irradiating spots on a layer |
US7010958B2 (en) | 2002-12-19 | 2006-03-14 | Asml Holding N.V. | High-resolution gas gauge proximity sensor |
DE60307322T2 (de) | 2002-12-19 | 2007-10-18 | Koninklijke Philips Electronics N.V. | Verfahren und anordnung zum bestrahlen einer schicht mittels eines lichtpunkts |
US6781670B2 (en) | 2002-12-30 | 2004-08-24 | Intel Corporation | Immersion lithography |
US7090964B2 (en) | 2003-02-21 | 2006-08-15 | Asml Holding N.V. | Lithographic printing with polarized light |
US6943941B2 (en) | 2003-02-27 | 2005-09-13 | Asml Netherlands B.V. | Stationary and dynamic radial transverse electric polarizer for high numerical aperture systems |
US7206059B2 (en) | 2003-02-27 | 2007-04-17 | Asml Netherlands B.V. | Stationary and dynamic radial transverse electric polarizer for high numerical aperture systems |
US7029832B2 (en) | 2003-03-11 | 2006-04-18 | Samsung Electronics Co., Ltd. | Immersion lithography methods using carbon dioxide |
US20050164522A1 (en) | 2003-03-24 | 2005-07-28 | Kunz Roderick R. | Optical fluids, and systems and methods of making and using the same |
PL1473264T3 (pl) * | 2003-03-31 | 2006-11-30 | Inventio Ag | Belka stopująca do tworzenia tymczasowej przestrzeni bezpieczeństwa wewnątrz szybu dźwigowego windy |
KR101177331B1 (ko) | 2003-04-09 | 2012-08-30 | 가부시키가이샤 니콘 | 액침 리소그래피 유체 제어 시스템 |
WO2004090633A2 (en) | 2003-04-10 | 2004-10-21 | Nikon Corporation | An electro-osmotic element for an immersion lithography apparatus |
EP2921905B1 (en) | 2003-04-10 | 2017-12-27 | Nikon Corporation | Run-off path to collect liquid for an immersion lithography apparatus |
SG10201604762UA (en) | 2003-04-10 | 2016-08-30 | Nikon Corp | Environmental system including vacuum scavange for an immersion lithography apparatus |
KR101409565B1 (ko) | 2003-04-10 | 2014-06-19 | 가부시키가이샤 니콘 | 액침 리소그래피 장치용 운반 영역을 포함하는 환경 시스템 |
WO2004090577A2 (en) | 2003-04-11 | 2004-10-21 | Nikon Corporation | Maintaining immersion fluid under a lithographic projection lens |
WO2004092830A2 (en) | 2003-04-11 | 2004-10-28 | Nikon Corporation | Liquid jet and recovery system for immersion lithography |
SG10201803122UA (en) | 2003-04-11 | 2018-06-28 | Nikon Corp | Immersion lithography apparatus and device manufacturing method |
ATE542167T1 (de) | 2003-04-17 | 2012-02-15 | Nikon Corp | Lithographisches immersionsgerät |
JP4025683B2 (ja) | 2003-05-09 | 2007-12-26 | 松下電器産業株式会社 | パターン形成方法及び露光装置 |
JP4146755B2 (ja) | 2003-05-09 | 2008-09-10 | 松下電器産業株式会社 | パターン形成方法 |
TWI295414B (en) | 2003-05-13 | 2008-04-01 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
EP1480065A3 (en) | 2003-05-23 | 2006-05-10 | Canon Kabushiki Kaisha | Projection optical system, exposure apparatus, and device manufacturing method |
TWI614794B (zh) | 2003-05-23 | 2018-02-11 | Nikon Corp | 曝光方法及曝光裝置以及元件製造方法 |
TWI518742B (zh) | 2003-05-23 | 2016-01-21 | 尼康股份有限公司 | A method of manufacturing an exposure apparatus and an element |
TWI347741B (en) | 2003-05-30 | 2011-08-21 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
US7213963B2 (en) | 2003-06-09 | 2007-05-08 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7317504B2 (en) * | 2004-04-08 | 2008-01-08 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7684008B2 (en) | 2003-06-11 | 2010-03-23 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
JP4084710B2 (ja) | 2003-06-12 | 2008-04-30 | 松下電器産業株式会社 | パターン形成方法 |
JP4054285B2 (ja) | 2003-06-12 | 2008-02-27 | 松下電器産業株式会社 | パターン形成方法 |
US6867844B2 (en) | 2003-06-19 | 2005-03-15 | Asml Holding N.V. | Immersion photolithography system and method using microchannel nozzles |
JP4029064B2 (ja) | 2003-06-23 | 2008-01-09 | 松下電器産業株式会社 | パターン形成方法 |
JP4084712B2 (ja) | 2003-06-23 | 2008-04-30 | 松下電器産業株式会社 | パターン形成方法 |
JP2005019616A (ja) | 2003-06-25 | 2005-01-20 | Canon Inc | 液浸式露光装置 |
JP4343597B2 (ja) | 2003-06-25 | 2009-10-14 | キヤノン株式会社 | 露光装置及びデバイス製造方法 |
US6809794B1 (en) | 2003-06-27 | 2004-10-26 | Asml Holding N.V. | Immersion photolithography system and method using inverted wafer-projection optics interface |
JP3862678B2 (ja) | 2003-06-27 | 2006-12-27 | キヤノン株式会社 | 露光装置及びデバイス製造方法 |
EP1498778A1 (en) | 2003-06-27 | 2005-01-19 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
DE60308161T2 (de) | 2003-06-27 | 2007-08-09 | Asml Netherlands B.V. | Lithographischer Apparat und Verfahren zur Herstellung eines Artikels |
EP1494074A1 (en) | 2003-06-30 | 2005-01-05 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
WO2005006026A2 (en) | 2003-07-01 | 2005-01-20 | Nikon Corporation | Using isotopically specified fluids as optical elements |
SG109000A1 (en) | 2003-07-16 | 2005-02-28 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
US7384149B2 (en) | 2003-07-21 | 2008-06-10 | Asml Netherlands B.V. | Lithographic projection apparatus, gas purging method and device manufacturing method and purge gas supply system |
EP1500982A1 (en) | 2003-07-24 | 2005-01-26 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7006209B2 (en) | 2003-07-25 | 2006-02-28 | Advanced Micro Devices, Inc. | Method and apparatus for monitoring and controlling imaging in immersion lithography systems |
KR101599649B1 (ko) * | 2003-07-28 | 2016-03-14 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법, 그리고 노광 장치의 제어 방법 |
US7175968B2 (en) | 2003-07-28 | 2007-02-13 | Asml Netherlands B.V. | Lithographic apparatus, device manufacturing method and a substrate |
EP1503244A1 (en) | 2003-07-28 | 2005-02-02 | ASML Netherlands B.V. | Lithographic projection apparatus and device manufacturing method |
US7326522B2 (en) | 2004-02-11 | 2008-02-05 | Asml Netherlands B.V. | Device manufacturing method and a substrate |
US7779781B2 (en) | 2003-07-31 | 2010-08-24 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
JP2005057294A (ja) | 2003-08-07 | 2005-03-03 | Asml Netherlands Bv | インタフェースユニット、該インタフェースユニットを含むリソグラフィ投影装置、及びデバイス製造方法 |
US7579135B2 (en) | 2003-08-11 | 2009-08-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Lithography apparatus for manufacture of integrated circuits |
US7700267B2 (en) | 2003-08-11 | 2010-04-20 | Taiwan Semiconductor Manufacturing Company, Ltd. | Immersion fluid for immersion lithography, and method of performing immersion lithography |
US7061578B2 (en) | 2003-08-11 | 2006-06-13 | Advanced Micro Devices, Inc. | Method and apparatus for monitoring and controlling imaging in immersion lithography systems |
US7085075B2 (en) | 2003-08-12 | 2006-08-01 | Carl Zeiss Smt Ag | Projection objectives including a plurality of mirrors with lenses ahead of mirror M3 |
US6844206B1 (en) | 2003-08-21 | 2005-01-18 | Advanced Micro Devices, Llp | Refractive index system monitor and control for immersion lithography |
US7070915B2 (en) * | 2003-08-29 | 2006-07-04 | Tokyo Electron Limited | Method and system for drying a substrate |
TWI245163B (en) | 2003-08-29 | 2005-12-11 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
TWI263859B (en) | 2003-08-29 | 2006-10-11 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
US6954256B2 (en) | 2003-08-29 | 2005-10-11 | Asml Netherlands B.V. | Gradient immersion lithography |
US7014966B2 (en) | 2003-09-02 | 2006-03-21 | Advanced Micro Devices, Inc. | Method and apparatus for elimination of bubbles in immersion medium in immersion lithography systems |
JP4288426B2 (ja) | 2003-09-03 | 2009-07-01 | 株式会社ニコン | 液浸リソグラフィのための流体の供給装置及び方法 |
JP4378136B2 (ja) | 2003-09-04 | 2009-12-02 | キヤノン株式会社 | 露光装置及びデバイス製造方法 |
JP3870182B2 (ja) | 2003-09-09 | 2007-01-17 | キヤノン株式会社 | 露光装置及びデバイス製造方法 |
US6961186B2 (en) | 2003-09-26 | 2005-11-01 | Takumi Technology Corp. | Contact printing using a magnified mask image |
DE60302897T2 (de) | 2003-09-29 | 2006-08-03 | Asml Netherlands B.V. | Lithographischer Apparat und Verfahren zur Herstellung einer Vorrichtung |
US7158211B2 (en) | 2003-09-29 | 2007-01-02 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
EP1519230A1 (en) | 2003-09-29 | 2005-03-30 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7369217B2 (en) | 2003-10-03 | 2008-05-06 | Micronic Laser Systems Ab | Method and device for immersion lithography |
JP2005136374A (ja) | 2003-10-06 | 2005-05-26 | Matsushita Electric Ind Co Ltd | 半導体製造装置及びそれを用いたパターン形成方法 |
KR20060126949A (ko) * | 2003-10-08 | 2006-12-11 | 가부시키가이샤 니콘 | 기판 반송 장치와 기판 반송 방법, 노광 장치와 노광 방법,및 디바이스 제조 방법 |
KR101203028B1 (ko) * | 2003-10-08 | 2012-11-21 | 가부시키가이샤 자오 니콘 | 기판 반송 장치 및 기판 반송 방법, 노광 장치 및 노광 방법, 디바이스 제조 방법 |
US7678527B2 (en) | 2003-10-16 | 2010-03-16 | Intel Corporation | Methods and compositions for providing photoresist with improved properties for contacting liquids |
EP1685446A2 (en) | 2003-11-05 | 2006-08-02 | DSM IP Assets B.V. | A method and apparatus for producing microchips |
US7924397B2 (en) | 2003-11-06 | 2011-04-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Anti-corrosion layer on objective lens for liquid immersion lithography applications |
US7545481B2 (en) | 2003-11-24 | 2009-06-09 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US8854602B2 (en) | 2003-11-24 | 2014-10-07 | Asml Netherlands B.V. | Holding device for an optical element in an objective |
US7125652B2 (en) | 2003-12-03 | 2006-10-24 | Advanced Micro Devices, Inc. | Immersion lithographic process using a conforming immersion medium |
US7385764B2 (en) | 2003-12-15 | 2008-06-10 | Carl Zeiss Smt Ag | Objectives as a microlithography projection objective with at least one liquid lens |
WO2005059617A2 (en) | 2003-12-15 | 2005-06-30 | Carl Zeiss Smt Ag | Projection objective having a high aperture and a planar end surface |
US20050185269A1 (en) | 2003-12-19 | 2005-08-25 | Carl Zeiss Smt Ag | Catadioptric projection objective with geometric beam splitting |
US7460206B2 (en) | 2003-12-19 | 2008-12-02 | Carl Zeiss Smt Ag | Projection objective for immersion lithography |
JP5102492B2 (ja) | 2003-12-19 | 2012-12-19 | カール・ツァイス・エスエムティー・ゲーエムベーハー | 結晶素子を有するマイクロリソグラフィー投影用対物レンズ |
US7589818B2 (en) | 2003-12-23 | 2009-09-15 | Asml Netherlands B.V. | Lithographic apparatus, alignment apparatus, device manufacturing method, and a method of converting an apparatus |
US7394521B2 (en) | 2003-12-23 | 2008-07-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7119884B2 (en) | 2003-12-24 | 2006-10-10 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US20050147920A1 (en) | 2003-12-30 | 2005-07-07 | Chia-Hui Lin | Method and system for immersion lithography |
US7088422B2 (en) | 2003-12-31 | 2006-08-08 | International Business Machines Corporation | Moving lens for immersion optical lithography |
JP4371822B2 (ja) | 2004-01-06 | 2009-11-25 | キヤノン株式会社 | 露光装置 |
JP4429023B2 (ja) | 2004-01-07 | 2010-03-10 | キヤノン株式会社 | 露光装置及びデバイス製造方法 |
US20050153424A1 (en) | 2004-01-08 | 2005-07-14 | Derek Coon | Fluid barrier with transparent areas for immersion lithography |
KR101288187B1 (ko) | 2004-01-14 | 2013-07-19 | 칼 짜이스 에스엠티 게엠베하 | 반사굴절식 투영 대물렌즈 |
CN1910522B (zh) | 2004-01-16 | 2010-05-26 | 卡尔蔡司Smt股份公司 | 偏振调制光学元件 |
WO2005069078A1 (en) | 2004-01-19 | 2005-07-28 | Carl Zeiss Smt Ag | Microlithographic projection exposure apparatus with immersion projection lens |
WO2005071491A2 (en) | 2004-01-20 | 2005-08-04 | Carl Zeiss Smt Ag | Exposure apparatus and measuring device for a projection lens |
US7026259B2 (en) | 2004-01-21 | 2006-04-11 | International Business Machines Corporation | Liquid-filled balloons for immersion lithography |
US7391501B2 (en) | 2004-01-22 | 2008-06-24 | Intel Corporation | Immersion liquids with siloxane polymer for immersion lithography |
US20050161644A1 (en) * | 2004-01-23 | 2005-07-28 | Peng Zhang | Immersion lithography fluids |
TWI259319B (en) | 2004-01-23 | 2006-08-01 | Air Prod & Chem | Immersion lithography fluids |
KR20070039869A (ko) | 2004-02-03 | 2007-04-13 | 브루스 더블유. 스미스 | 용액을 사용한 포토리소그래피 방법 및 관련 시스템 |
KR101227211B1 (ko) * | 2004-02-03 | 2013-01-28 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법 |
US20050177528A1 (en) * | 2004-02-09 | 2005-08-11 | Jaffer Qamar | Authenticating digital records |
US7050146B2 (en) | 2004-02-09 | 2006-05-23 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
WO2005076084A1 (en) | 2004-02-09 | 2005-08-18 | Carl Zeiss Smt Ag | Projection objective for a microlithographic projection exposure apparatus |
WO2005081067A1 (en) | 2004-02-13 | 2005-09-01 | Carl Zeiss Smt Ag | Projection objective for a microlithographic projection exposure apparatus |
WO2005081030A1 (en) | 2004-02-18 | 2005-09-01 | Corning Incorporated | Catadioptric imaging system for high numerical aperture imaging with deep ultraviolet light |
US20050205108A1 (en) | 2004-03-16 | 2005-09-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method and system for immersion lithography lens cleaning |
US7027125B2 (en) | 2004-03-25 | 2006-04-11 | International Business Machines Corporation | System and apparatus for photolithography |
US7084960B2 (en) | 2004-03-29 | 2006-08-01 | Intel Corporation | Lithography using controlled polarization |
US7034917B2 (en) | 2004-04-01 | 2006-04-25 | Asml Netherlands B.V. | Lithographic apparatus, device manufacturing method and device manufactured thereby |
US7227619B2 (en) | 2004-04-01 | 2007-06-05 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7295283B2 (en) | 2004-04-02 | 2007-11-13 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
TWI257512B (en) * | 2004-04-06 | 2006-07-01 | Au Optronics Corp | Device and method for adjusting backlight brightness |
WO2005098504A1 (en) | 2004-04-08 | 2005-10-20 | Carl Zeiss Smt Ag | Imaging system with mirror group |
US7898642B2 (en) | 2004-04-14 | 2011-03-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7271878B2 (en) | 2004-04-22 | 2007-09-18 | International Business Machines Corporation | Wafer cell for immersion lithography |
US7244665B2 (en) | 2004-04-29 | 2007-07-17 | Micron Technology, Inc. | Wafer edge ring structures and methods of formation |
US7379159B2 (en) | 2004-05-03 | 2008-05-27 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US8054448B2 (en) | 2004-05-04 | 2011-11-08 | Nikon Corporation | Apparatus and method for providing fluid for immersion lithography |
US20060244938A1 (en) | 2004-05-04 | 2006-11-02 | Karl-Heinz Schuster | Microlitographic projection exposure apparatus and immersion liquid therefore |
US7091502B2 (en) | 2004-05-12 | 2006-08-15 | Taiwan Semiconductor Manufacturing, Co., Ltd. | Apparatus and method for immersion lithography |
KR20160085375A (ko) | 2004-05-17 | 2016-07-15 | 칼 짜이스 에스엠티 게엠베하 | 중간이미지를 갖는 카타디옵트릭 투사 대물렌즈 |
US7616383B2 (en) | 2004-05-18 | 2009-11-10 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7486381B2 (en) | 2004-05-21 | 2009-02-03 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
EP1759248A1 (en) | 2004-06-04 | 2007-03-07 | Carl Zeiss SMT AG | Projection system with compensation of intensity variatons and compensation element therefor |
CN100594430C (zh) | 2004-06-04 | 2010-03-17 | 卡尔蔡司Smt股份公司 | 用于测量光学成像***的图像质量的*** |
US7463330B2 (en) * | 2004-07-07 | 2008-12-09 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7446850B2 (en) * | 2004-12-03 | 2008-11-04 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
JP2006222284A (ja) * | 2005-02-10 | 2006-08-24 | Toshiba Corp | パターン形成方法、及び半導体装置の製造方法 |
-
2004
- 2004-10-07 KR KR1020117021338A patent/KR101203028B1/ko active IP Right Grant
- 2004-10-07 AT AT04792152T patent/ATE509367T1/de not_active IP Right Cessation
- 2004-10-07 KR KR1020137007424A patent/KR101361892B1/ko active IP Right Grant
- 2004-10-07 KR KR1020067006650A patent/KR101111364B1/ko active IP Right Grant
- 2004-10-07 JP JP2005514600A patent/JP4319188B2/ja not_active Expired - Fee Related
- 2004-10-07 WO PCT/JP2004/014855 patent/WO2005036621A1/ja active Application Filing
- 2004-10-07 EP EP04792152A patent/EP1672681B8/en not_active Not-in-force
- 2004-10-07 KR KR1020127013849A patent/KR101319109B1/ko active IP Right Grant
- 2004-10-08 TW TW093130457A patent/TW200523684A/zh not_active IP Right Cessation
- 2004-10-08 TW TW101136838A patent/TWI620990B/zh not_active IP Right Cessation
-
2006
- 2006-04-06 US US11/398,572 patent/US8345216B2/en not_active Expired - Fee Related
- 2006-09-28 HK HK06110789.8A patent/HK1090174A1/xx not_active IP Right Cessation
-
2007
- 2007-01-11 US US11/652,015 patent/US7995186B2/en not_active Expired - Fee Related
- 2007-08-10 US US11/889,288 patent/US8107055B2/en not_active Expired - Fee Related
-
2009
- 2009-01-23 JP JP2009013518A patent/JP5079717B2/ja not_active Expired - Fee Related
-
2011
- 2011-06-06 JP JP2011126741A patent/JP5634947B2/ja not_active Expired - Fee Related
- 2011-06-29 US US13/067,845 patent/US9110381B2/en not_active Expired - Fee Related
-
2012
- 2012-03-30 JP JP2012079587A patent/JP2012138623A/ja active Pending
- 2012-11-30 US US13/690,577 patent/US9097986B2/en not_active Expired - Fee Related
Also Published As
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5079717B2 (ja) | 基板搬送装置及び基板搬送方法、露光装置及び露光方法、デバイス製造装置及びデバイス製造方法 | |
JP4552853B2 (ja) | 露光装置及びデバイス製造方法 | |
JP4727734B2 (ja) | 基板搬送装置、基板搬送方法、露光方法、露光装置、及びデバイス製造方法 | |
JP4525827B2 (ja) | 露光装置及びデバイス製造方法、露光システム | |
JP4525062B2 (ja) | 露光装置及びデバイス製造方法、露光システム | |
JP2005136364A (ja) | 基板搬送装置、露光装置、並びにデバイス製造方法 | |
JP4701606B2 (ja) | 露光方法及び露光装置、デバイス製造方法 | |
JP2006190996A (ja) | 基板処理方法、露光方法、露光装置及びデバイス製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20070914 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20080303 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20081125 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20090123 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20090519 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20090527 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120605 Year of fee payment: 3 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 4319188 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
S533 | Written request for registration of change of name |
Free format text: JAPANESE INTERMEDIATE CODE: R313533 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120605 Year of fee payment: 3 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20150605 Year of fee payment: 6 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |