JPS6485416A - Level shift circuit - Google Patents

Level shift circuit

Info

Publication number
JPS6485416A
JPS6485416A JP62243036A JP24303687A JPS6485416A JP S6485416 A JPS6485416 A JP S6485416A JP 62243036 A JP62243036 A JP 62243036A JP 24303687 A JP24303687 A JP 24303687A JP S6485416 A JPS6485416 A JP S6485416A
Authority
JP
Japan
Prior art keywords
voltage
level shift
hot carrier
trs
characteristic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62243036A
Other languages
Japanese (ja)
Other versions
JPH0429250B2 (en
Inventor
Hiroshi Hayama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP62243036A priority Critical patent/JPS6485416A/en
Publication of JPS6485416A publication Critical patent/JPS6485416A/en
Publication of JPH0429250B2 publication Critical patent/JPH0429250B2/ja
Granted legal-status Critical Current

Links

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  • Manipulation Of Pulses (AREA)
  • Electronic Switches (AREA)
  • Logic Circuits (AREA)

Abstract

PURPOSE:To prevent the deterioration in the transistor(TR) characteristic by hot carrier injection effect even in a high voltage CMOS circuit by deciding the signal level after level shift depending on the power voltage and the break down voltage of a Zener diode. CONSTITUTION:The title circuit applies flip-flop basically and the cathode voltage of Zener diodes 13, 14 is clamped to the breakdown voltage and the gate voltage connecting to the cathode in TRs 5, 6, 9 is not decreased below the breakdown voltage of the Zener diodes 13, 14. Thus, only a small amplitude signal is applied to the gate of the TRs 5, 6, 9 in comparison with the power voltage. Thus, no hot carrier injection effect is caused and even in case of a high voltage level shift circuit, the characteristic is not deteriorated due to hot carrier.
JP62243036A 1987-09-28 1987-09-28 Level shift circuit Granted JPS6485416A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62243036A JPS6485416A (en) 1987-09-28 1987-09-28 Level shift circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62243036A JPS6485416A (en) 1987-09-28 1987-09-28 Level shift circuit

Publications (2)

Publication Number Publication Date
JPS6485416A true JPS6485416A (en) 1989-03-30
JPH0429250B2 JPH0429250B2 (en) 1992-05-18

Family

ID=17097894

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62243036A Granted JPS6485416A (en) 1987-09-28 1987-09-28 Level shift circuit

Country Status (1)

Country Link
JP (1) JPS6485416A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5670905A (en) * 1994-07-20 1997-09-23 Micron Technology, Inc. Low-to-high voltage CMOS driver circuit for driving capacitive loads
US5883538A (en) * 1996-11-13 1999-03-16 Micron Technology, Inc. Low-to-high voltage CMOS driver circuit for driving capacitive loads
EP1728328A1 (en) * 2004-03-24 2006-12-06 Analog Devices, Inc. Programmable input range adc
CN103580479A (en) * 2013-10-15 2014-02-12 上海兆芯集成电路有限公司 Voltage conversion circuit

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6425449B2 (en) * 2014-08-05 2018-11-21 サトーホールディングス株式会社 Thermal printing apparatus and control method thereof

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5670905A (en) * 1994-07-20 1997-09-23 Micron Technology, Inc. Low-to-high voltage CMOS driver circuit for driving capacitive loads
US5999033A (en) * 1994-07-20 1999-12-07 Micron Technology, Inc. Low-to-high voltage CMOS driver circuit for driving capacitive loads
US5883538A (en) * 1996-11-13 1999-03-16 Micron Technology, Inc. Low-to-high voltage CMOS driver circuit for driving capacitive loads
EP1728328A1 (en) * 2004-03-24 2006-12-06 Analog Devices, Inc. Programmable input range adc
JP2007531408A (en) * 2004-03-24 2007-11-01 アナログ・デバイシズ・インコーポレーテッド Programmable input range ADC
CN103580479A (en) * 2013-10-15 2014-02-12 上海兆芯集成电路有限公司 Voltage conversion circuit

Also Published As

Publication number Publication date
JPH0429250B2 (en) 1992-05-18

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