JPS5763861A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5763861A
JPS5763861A JP55139592A JP13959280A JPS5763861A JP S5763861 A JPS5763861 A JP S5763861A JP 55139592 A JP55139592 A JP 55139592A JP 13959280 A JP13959280 A JP 13959280A JP S5763861 A JPS5763861 A JP S5763861A
Authority
JP
Japan
Prior art keywords
output terminal
drain region
drain
voltage
resistors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55139592A
Other languages
Japanese (ja)
Inventor
Kazuki Yoshitake
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP55139592A priority Critical patent/JPS5763861A/en
Publication of JPS5763861A publication Critical patent/JPS5763861A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Protection Of Static Devices (AREA)
  • Amplifiers (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To obtain a CMOS-IC provided with an output terminal having a large rupture-resistance strength against surge by forming a drain region serving as the output terminal in extension and thereby giving a resisting component to the drain region. CONSTITUTION:P-N channel MOS transistors Tr1 and Tr2 are connected in series between power sources, with a gate made to be an input terminal. A resistor is formed by forming the drain region of the MOS transistors Tr1 and Tr2 slenderly and connection to the output terminal 1 is made through the intermediary of resistors R1 amd R2. PN junction formed between the drain and a substrate is made to be protection diodes D1 and D2. When surge voltage is impressed, the diodes D1 and D2 turn conductive and the voltage is also applied to the resistors R1 and R2. However, a time constant circuit is formed by a capacity component formed with the substrate and the voltage made gentle is thus applied to the drain, whereby the breakdown of the transistors is prevented.
JP55139592A 1980-10-06 1980-10-06 Semiconductor device Pending JPS5763861A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55139592A JPS5763861A (en) 1980-10-06 1980-10-06 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55139592A JPS5763861A (en) 1980-10-06 1980-10-06 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5763861A true JPS5763861A (en) 1982-04-17

Family

ID=15248854

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55139592A Pending JPS5763861A (en) 1980-10-06 1980-10-06 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5763861A (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58159363A (en) * 1982-03-17 1983-09-21 Nec Corp Input/output protecting device for semiconductor integrated circuit
EP0149033A2 (en) * 1983-12-22 1985-07-24 Texas Instruments Deutschland Gmbh Field-effect transistor with insulated gate electrode
JPS60224259A (en) * 1984-04-20 1985-11-08 Hitachi Micro Comput Eng Ltd Semiconductor integrated circuit device
JPS61156854A (en) * 1984-12-28 1986-07-16 Mitsubishi Electric Corp Input protection circuit for cmos semiconductor device
JPS61176146A (en) * 1985-01-31 1986-08-07 Toshiba Corp Semiconductor integrated circuit device
JPS63119251A (en) * 1987-10-12 1988-05-23 Nec Corp C-mos field effect transistor
US4825102A (en) * 1986-09-11 1989-04-25 Matsushita Electric Industrial Co., Ltd. MOS FET drive circuit providing protection against transient voltage breakdown
JPH02256268A (en) * 1989-03-29 1990-10-17 Nec Corp Cmos output buffer for semiconductor integrated circuit
US4990802A (en) * 1988-11-22 1991-02-05 At&T Bell Laboratories ESD protection for output buffers

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0312472B2 (en) * 1982-03-17 1991-02-20 Nippon Electric Co
JPS58159363A (en) * 1982-03-17 1983-09-21 Nec Corp Input/output protecting device for semiconductor integrated circuit
EP0149033A2 (en) * 1983-12-22 1985-07-24 Texas Instruments Deutschland Gmbh Field-effect transistor with insulated gate electrode
US4845536A (en) * 1983-12-22 1989-07-04 Texas Instruments Incorporated Transistor structure
JPS60224259A (en) * 1984-04-20 1985-11-08 Hitachi Micro Comput Eng Ltd Semiconductor integrated circuit device
JPS61156854A (en) * 1984-12-28 1986-07-16 Mitsubishi Electric Corp Input protection circuit for cmos semiconductor device
JPH0312786B2 (en) * 1984-12-28 1991-02-21 Mitsubishi Electric Corp
JPS61176146A (en) * 1985-01-31 1986-08-07 Toshiba Corp Semiconductor integrated circuit device
US4825102A (en) * 1986-09-11 1989-04-25 Matsushita Electric Industrial Co., Ltd. MOS FET drive circuit providing protection against transient voltage breakdown
JPS63119251A (en) * 1987-10-12 1988-05-23 Nec Corp C-mos field effect transistor
JPH0347745B2 (en) * 1987-10-12 1991-07-22 Nippon Electric Co
US4990802A (en) * 1988-11-22 1991-02-05 At&T Bell Laboratories ESD protection for output buffers
JPH02256268A (en) * 1989-03-29 1990-10-17 Nec Corp Cmos output buffer for semiconductor integrated circuit

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