JPS5745283A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5745283A
JPS5745283A JP12037880A JP12037880A JPS5745283A JP S5745283 A JPS5745283 A JP S5745283A JP 12037880 A JP12037880 A JP 12037880A JP 12037880 A JP12037880 A JP 12037880A JP S5745283 A JPS5745283 A JP S5745283A
Authority
JP
Japan
Prior art keywords
type
element region
zener diode
type element
composing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12037880A
Other languages
Japanese (ja)
Inventor
Mitsunobu Matsuka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Home Electronics Ltd
NEC Corp
Original Assignee
NEC Home Electronics Ltd
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Home Electronics Ltd, Nippon Electric Co Ltd filed Critical NEC Home Electronics Ltd
Priority to JP12037880A priority Critical patent/JPS5745283A/en
Publication of JPS5745283A publication Critical patent/JPS5745283A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/866—Zener diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To prevent variations in the Zener characteristics otherwise caused by a high frequency included in the power line by arranging an n<+> type element region composing a Zener diode in cooperation with a p type element region following an n<+> type imbedded layer. CONSTITUTION:An n<+> type element region 10 composing a Zener diode Dz in cooperation with a p type element region 4 is arranged following an n<+> type imbedded layer 2. The n type buried layer 2 is equal in the potential to the n<+> type element region 10 while a very large junction capacitance C2 is formed between an electrode 7 and a substrainer 1 due to a pn junction 11 between the n<+> type region 2 and a p type substrate. As a result, even through included in a power line giving the electrode 7 a positive potential, a high frequency is by-passed to the Zener diode Dz passing through said junction capacitance C2 thereby preventing variations in the characteristics of the Zener diode Dz.
JP12037880A 1980-08-29 1980-08-29 Semiconductor device Pending JPS5745283A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12037880A JPS5745283A (en) 1980-08-29 1980-08-29 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12037880A JPS5745283A (en) 1980-08-29 1980-08-29 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5745283A true JPS5745283A (en) 1982-03-15

Family

ID=14784719

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12037880A Pending JPS5745283A (en) 1980-08-29 1980-08-29 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5745283A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001127294A (en) * 1999-10-28 2001-05-11 Denso Corp Power mos transistor
KR100532730B1 (en) * 2000-12-12 2005-11-30 산켄덴키 가부시키가이샤 Pn junction diode and manufacturing method thereof

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4958726A (en) * 1972-10-04 1974-06-07

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4958726A (en) * 1972-10-04 1974-06-07

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001127294A (en) * 1999-10-28 2001-05-11 Denso Corp Power mos transistor
KR100532730B1 (en) * 2000-12-12 2005-11-30 산켄덴키 가부시키가이샤 Pn junction diode and manufacturing method thereof

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