JPS6468958A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS6468958A
JPS6468958A JP62225689A JP22568987A JPS6468958A JP S6468958 A JPS6468958 A JP S6468958A JP 62225689 A JP62225689 A JP 62225689A JP 22568987 A JP22568987 A JP 22568987A JP S6468958 A JPS6468958 A JP S6468958A
Authority
JP
Japan
Prior art keywords
wiring
semiconductor device
superconducting material
transistor
breakdown
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62225689A
Other languages
Japanese (ja)
Inventor
Koichi Kugimiya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP62225689A priority Critical patent/JPS6468958A/en
Publication of JPS6468958A publication Critical patent/JPS6468958A/en
Pending legal-status Critical Current

Links

Landscapes

  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To prevent the breakdown of an element as well as to improve the reliability of a semiconductor device by a method wherein a load resistor is provided on the wiring, made of a superconducting material, linking to a driving element. CONSTITUTION:A MOS transistor group 1 is formed by the wiring 2 consisting of a superconducting material. A load transistor 3 is formed between the driving transistor 4, having an Al wiring, and the transistor group 1. As a result, in the formation of an ultralow resistance of a wiring using a superconducting material, a highly reliable semiconductor device can be obtained without generation of breakdown on the wiring part of a driving element.
JP62225689A 1987-09-09 1987-09-09 Semiconductor device Pending JPS6468958A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62225689A JPS6468958A (en) 1987-09-09 1987-09-09 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62225689A JPS6468958A (en) 1987-09-09 1987-09-09 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS6468958A true JPS6468958A (en) 1989-03-15

Family

ID=16833245

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62225689A Pending JPS6468958A (en) 1987-09-09 1987-09-09 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS6468958A (en)

Similar Documents

Publication Publication Date Title
DE68911495D1 (en) Composition for a circuit connection, connection method with this composition and connected structure for semiconductor chips.
EP0271942A3 (en) Mos power structure with protective device against overvoltages and manufacturing process therefor
DE3778856D1 (en) COMPLEMENTARY LATERAL RECTIFIERS WITH ISOLATED GATE.
JPS535585A (en) Semiconductor ic unit
JPS5384578A (en) Semiconductor integrated circuit
DE3785699D1 (en) SEMICONDUCTOR ARRANGEMENT WITH TWO ELECTRODES SEPARATED BY AN INSULATION LAYER.
JPS6468958A (en) Semiconductor device
EP0292327A3 (en) Electrostatic breakdown protection circuits
JPS5745948A (en) Semiconductor integrated circuit device
JPS5272586A (en) Production of semiconductor device
JPS6485416A (en) Level shift circuit
JPS5618469A (en) Semiconductor device
JPS5378782A (en) Transmission characteristic variable mos semiconductor device
JPS5214377A (en) Semiconductor device
JPS5377476A (en) Semiconductor integrated circuit device
JPS6450568A (en) Semiconductor device
JPS52135273A (en) Mos type semiconductor device
EP0327121A3 (en) Superconducting field effect transistor
JPS5571062A (en) Iil type semiconductor device
FR2337433A1 (en) Fast integrated injection logic circuit - has two transistors formed by specified zones and achieves low current consumption
JPS52156583A (en) Electrode formation method in semiconductor device
JPS6489917A (en) Superconducting current limiter
JPS6442168A (en) Semiconductor device
JPS5294779A (en) Semiconductor device
JPS5318982A (en) Insulated gate type semiconductor device