JPS54127288A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS54127288A JPS54127288A JP3476678A JP3476678A JPS54127288A JP S54127288 A JPS54127288 A JP S54127288A JP 3476678 A JP3476678 A JP 3476678A JP 3476678 A JP3476678 A JP 3476678A JP S54127288 A JPS54127288 A JP S54127288A
- Authority
- JP
- Japan
- Prior art keywords
- zener diodes
- emitter
- transistor
- stage transistor
- collector
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 238000009792 diffusion process Methods 0.000 abstract 2
- 230000001939 inductive effect Effects 0.000 abstract 2
- 230000010355 oscillation Effects 0.000 abstract 2
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
- H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
- H01L27/0825—Combination of vertical direct transistors of the same conductivity type having different characteristics,(e.g. Darlington transistors)
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Abstract
PURPOSE:To prevent oscillation when an inductive load is OFF, by connecting Zener diodes between the collector and emitter of a drive-stage transistor simultaneously with the diffusion of the base and emitter of a transistor constituting a Darlington circuit. CONSTITUTION:On one surface of collector 10, drive-stage transistor Tr1 and output-stage transistor Tr2 are both formed. Between regions of Tr1 and Tr2, Zener diodes 20, 21 and 22 are formed at the same time as the diffusion of the base and emitter of the transistor. Then, three Zener diodes are connected in series. An equivalent circuit is shown in the figure 3. Since Zener diodes are incorporated in a chip constituting the Darlington circuit, the cost can be reduced and oscillation at the time when an inductive load is OFF can be prevented.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3476678A JPS54127288A (en) | 1978-03-25 | 1978-03-25 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3476678A JPS54127288A (en) | 1978-03-25 | 1978-03-25 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS54127288A true JPS54127288A (en) | 1979-10-03 |
Family
ID=12423419
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3476678A Pending JPS54127288A (en) | 1978-03-25 | 1978-03-25 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS54127288A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6271257A (en) * | 1985-07-05 | 1987-04-01 | アメリカン テレフオン アンド テレグラフ カムパニ− | Protecting circuit for induction load switch transistor |
-
1978
- 1978-03-25 JP JP3476678A patent/JPS54127288A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6271257A (en) * | 1985-07-05 | 1987-04-01 | アメリカン テレフオン アンド テレグラフ カムパニ− | Protecting circuit for induction load switch transistor |
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