JPS6479090A - Method for stabilizing growth of semiconductor single crystal - Google Patents
Method for stabilizing growth of semiconductor single crystalInfo
- Publication number
- JPS6479090A JPS6479090A JP23484587A JP23484587A JPS6479090A JP S6479090 A JPS6479090 A JP S6479090A JP 23484587 A JP23484587 A JP 23484587A JP 23484587 A JP23484587 A JP 23484587A JP S6479090 A JPS6479090 A JP S6479090A
- Authority
- JP
- Japan
- Prior art keywords
- crucible
- melt
- single crystal
- raw material
- wall surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE:To prevent the sticking of raw material polycrystals to the wall surface of a crucible and to stabilize the growth of a single crystal by melting the raw material polycrystals while applying oscillation to the wall surface of the crucible or the melt. CONSTITUTION:The raw material polycrystals 1 are packed into a quartz crucible 3 installed in a graphite susceptor 4 and are heated by a heater 5. While the crucible 3 is gradually rotated, the crucible is lowered and the raw material polycrystals 1 packed in the crucible 3 are gradually melted from below to form the melt 2. An ultrasonic oscillator 6 installed via a heat insulating material 9 is simultaneously oscillated to apply the oscillation to the wall surface of the crucible 3 or the melt 2 via a waveguide 7 and the susceptor 4. The seed crystal is pulled up from the melt 2 and the single crystal is thus grown.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23484587A JPS6479090A (en) | 1987-09-21 | 1987-09-21 | Method for stabilizing growth of semiconductor single crystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23484587A JPS6479090A (en) | 1987-09-21 | 1987-09-21 | Method for stabilizing growth of semiconductor single crystal |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6479090A true JPS6479090A (en) | 1989-03-24 |
Family
ID=16977263
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23484587A Pending JPS6479090A (en) | 1987-09-21 | 1987-09-21 | Method for stabilizing growth of semiconductor single crystal |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6479090A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1991007520A1 (en) * | 1989-11-19 | 1991-05-30 | Kabushiki-Kaisha Hitachi Seisakusho | Method and apparatus for thin film formation, device, electro-magnetic apparatus, data recording/reproduction apparatus, signal processor, and method of producing molten crystal |
| US5837332A (en) * | 1989-11-19 | 1998-11-17 | Nihon Victor Kabushiki-Kaisha | Method and apparatus for preparing crystal thin films by using a surface acoustic wave |
| JP2007210803A (en) * | 2006-02-07 | 2007-08-23 | Shin Etsu Handotai Co Ltd | Method and apparatus for manufacturing silicon single crystal ingot, and silicon single crystal ingot |
-
1987
- 1987-09-21 JP JP23484587A patent/JPS6479090A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1991007520A1 (en) * | 1989-11-19 | 1991-05-30 | Kabushiki-Kaisha Hitachi Seisakusho | Method and apparatus for thin film formation, device, electro-magnetic apparatus, data recording/reproduction apparatus, signal processor, and method of producing molten crystal |
| US5837332A (en) * | 1989-11-19 | 1998-11-17 | Nihon Victor Kabushiki-Kaisha | Method and apparatus for preparing crystal thin films by using a surface acoustic wave |
| JP2007210803A (en) * | 2006-02-07 | 2007-08-23 | Shin Etsu Handotai Co Ltd | Method and apparatus for manufacturing silicon single crystal ingot, and silicon single crystal ingot |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| MY113247A (en) | Methods for improving zero dislocation yield of single crystals | |
| KR910006146A (en) | Method for preparing II-VI or III-V monocrystalline compound and its products | |
| JPS5580798A (en) | Ribbon crystal growing method by lateral pulling | |
| EP0104559B1 (en) | Pulling method of single crystals | |
| JPS6479090A (en) | Method for stabilizing growth of semiconductor single crystal | |
| US3261722A (en) | Process for preparing semiconductor ingots within a depression | |
| JPS5738398A (en) | Quartz glass crucible for pulling up silicon single crystal | |
| JPS55126597A (en) | Single crystal growing method | |
| JPS6111914B2 (en) | ||
| EP0135676A3 (en) | Apparatus for growing czochralski crystals and growth method using such apparatus | |
| JPS5777098A (en) | Method and apparatus for growing znse in liquid phase | |
| JPS61136987A (en) | Vessel for growing single crystal | |
| JPH0316988A (en) | Production device of single crystal of compound semiconductor | |
| JP2645491B2 (en) | Method for growing compound semiconductor single crystal | |
| JPH05319973A (en) | Single crystal production unit | |
| JPS55140792A (en) | Manufacture of 3-5 group compound semiconductor single crystal | |
| KR930000718A (en) | Single Crystal Continuous Growth Method and Continuous Growth Device | |
| JPH0867593A (en) | Method for growing single crystal | |
| JPS6433095A (en) | Single crystal growth apparatus | |
| JPS54125190A (en) | Crystal growing mehtod | |
| JPS56100195A (en) | Growing method for semiconductor single crystal | |
| JPH0449185Y2 (en) | ||
| JPH02248399A (en) | Method for growing mixed crystal-type compound semiconductor | |
| JPS5738395A (en) | Manufacturing apparatus for semiconductor crystal | |
| JPS5560092A (en) | Production of single crystal |