JPS55140792A - Manufacture of 3-5 group compound semiconductor single crystal - Google Patents

Manufacture of 3-5 group compound semiconductor single crystal

Info

Publication number
JPS55140792A
JPS55140792A JP4544179A JP4544179A JPS55140792A JP S55140792 A JPS55140792 A JP S55140792A JP 4544179 A JP4544179 A JP 4544179A JP 4544179 A JP4544179 A JP 4544179A JP S55140792 A JPS55140792 A JP S55140792A
Authority
JP
Japan
Prior art keywords
single crystal
crystal
salt
group compound
manufacture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4544179A
Other languages
Japanese (ja)
Other versions
JPS5715074B2 (en
Inventor
Shintaro Miyazawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP4544179A priority Critical patent/JPS55140792A/en
Publication of JPS55140792A publication Critical patent/JPS55140792A/en
Publication of JPS5715074B2 publication Critical patent/JPS5715074B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

PURPOSE: To manufacture the title single crystal free from an oxide layer, twins, subgrain boundaries, etc. by melting mixed salt of NaCl and KCl together with constituents for a III-V group compound semiconductor single crystal and growing a single crystal.
CONSTITUTION: Starting materials for a III-V group compound and NaCl-KCl liq. capsule mixed salt 2 are put into quartz crucible 3 and melted by induction-heating carbon heater 4 with high frequency coil 5. Seed crystal 12 is then contacted to the surface of starting material melt 1 through salt 2, well fitted, and pulled at an appropriate rate with rotating to grow single crystal 13. Crystal of salt 2 attaches to the surface of crystal 13 and forms mixed salt thick film 14. Accordingly, surface oxidation, volatilization and evaporation of crystal 13 are controlled. Since a thermal strain immediately after crystallization is relieved under the mild temp. distribution in salt 2, twins and subgrain boundaries are not formed.
COPYRIGHT: (C)1980,JPO&Japio
JP4544179A 1979-04-16 1979-04-16 Manufacture of 3-5 group compound semiconductor single crystal Granted JPS55140792A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4544179A JPS55140792A (en) 1979-04-16 1979-04-16 Manufacture of 3-5 group compound semiconductor single crystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4544179A JPS55140792A (en) 1979-04-16 1979-04-16 Manufacture of 3-5 group compound semiconductor single crystal

Publications (2)

Publication Number Publication Date
JPS55140792A true JPS55140792A (en) 1980-11-04
JPS5715074B2 JPS5715074B2 (en) 1982-03-27

Family

ID=12719403

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4544179A Granted JPS55140792A (en) 1979-04-16 1979-04-16 Manufacture of 3-5 group compound semiconductor single crystal

Country Status (1)

Country Link
JP (1) JPS55140792A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6254677B1 (en) 1997-12-26 2001-07-03 Sumitomo Electric Industries, Ltd. Semiconductor crystal, and method and apparatus of production thereof
US6572700B2 (en) 1997-12-26 2003-06-03 Sumitomo Electric Industries, Ltd. Semiconductor crystal, and method and apparatus of production thereof
EP1740331B1 (en) * 2004-04-13 2009-07-29 Helmholtz-Zentrum Berlin für Materialien und Energie GmbH Method and arrangement for crystal growth from fused metals or fused solutions

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6254677B1 (en) 1997-12-26 2001-07-03 Sumitomo Electric Industries, Ltd. Semiconductor crystal, and method and apparatus of production thereof
US6572700B2 (en) 1997-12-26 2003-06-03 Sumitomo Electric Industries, Ltd. Semiconductor crystal, and method and apparatus of production thereof
US6780244B2 (en) 1997-12-26 2004-08-24 Sumitomo Electric Industries, Ltd. Method for producing a semiconductor crystal
US6866714B2 (en) 1997-12-26 2005-03-15 Sumitomo Electric Industries, Ltd. Large size semiconductor crystal with low dislocation density
EP1740331B1 (en) * 2004-04-13 2009-07-29 Helmholtz-Zentrum Berlin für Materialien und Energie GmbH Method and arrangement for crystal growth from fused metals or fused solutions

Also Published As

Publication number Publication date
JPS5715074B2 (en) 1982-03-27

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