JPS55140792A - Manufacture of 3-5 group compound semiconductor single crystal - Google Patents
Manufacture of 3-5 group compound semiconductor single crystalInfo
- Publication number
- JPS55140792A JPS55140792A JP4544179A JP4544179A JPS55140792A JP S55140792 A JPS55140792 A JP S55140792A JP 4544179 A JP4544179 A JP 4544179A JP 4544179 A JP4544179 A JP 4544179A JP S55140792 A JPS55140792 A JP S55140792A
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- crystal
- salt
- group compound
- manufacture
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
PURPOSE: To manufacture the title single crystal free from an oxide layer, twins, subgrain boundaries, etc. by melting mixed salt of NaCl and KCl together with constituents for a III-V group compound semiconductor single crystal and growing a single crystal.
CONSTITUTION: Starting materials for a III-V group compound and NaCl-KCl liq. capsule mixed salt 2 are put into quartz crucible 3 and melted by induction-heating carbon heater 4 with high frequency coil 5. Seed crystal 12 is then contacted to the surface of starting material melt 1 through salt 2, well fitted, and pulled at an appropriate rate with rotating to grow single crystal 13. Crystal of salt 2 attaches to the surface of crystal 13 and forms mixed salt thick film 14. Accordingly, surface oxidation, volatilization and evaporation of crystal 13 are controlled. Since a thermal strain immediately after crystallization is relieved under the mild temp. distribution in salt 2, twins and subgrain boundaries are not formed.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4544179A JPS55140792A (en) | 1979-04-16 | 1979-04-16 | Manufacture of 3-5 group compound semiconductor single crystal |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4544179A JPS55140792A (en) | 1979-04-16 | 1979-04-16 | Manufacture of 3-5 group compound semiconductor single crystal |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS55140792A true JPS55140792A (en) | 1980-11-04 |
JPS5715074B2 JPS5715074B2 (en) | 1982-03-27 |
Family
ID=12719403
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4544179A Granted JPS55140792A (en) | 1979-04-16 | 1979-04-16 | Manufacture of 3-5 group compound semiconductor single crystal |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55140792A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6254677B1 (en) | 1997-12-26 | 2001-07-03 | Sumitomo Electric Industries, Ltd. | Semiconductor crystal, and method and apparatus of production thereof |
US6572700B2 (en) | 1997-12-26 | 2003-06-03 | Sumitomo Electric Industries, Ltd. | Semiconductor crystal, and method and apparatus of production thereof |
EP1740331B1 (en) * | 2004-04-13 | 2009-07-29 | Helmholtz-Zentrum Berlin für Materialien und Energie GmbH | Method and arrangement for crystal growth from fused metals or fused solutions |
-
1979
- 1979-04-16 JP JP4544179A patent/JPS55140792A/en active Granted
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6254677B1 (en) | 1997-12-26 | 2001-07-03 | Sumitomo Electric Industries, Ltd. | Semiconductor crystal, and method and apparatus of production thereof |
US6572700B2 (en) | 1997-12-26 | 2003-06-03 | Sumitomo Electric Industries, Ltd. | Semiconductor crystal, and method and apparatus of production thereof |
US6780244B2 (en) | 1997-12-26 | 2004-08-24 | Sumitomo Electric Industries, Ltd. | Method for producing a semiconductor crystal |
US6866714B2 (en) | 1997-12-26 | 2005-03-15 | Sumitomo Electric Industries, Ltd. | Large size semiconductor crystal with low dislocation density |
EP1740331B1 (en) * | 2004-04-13 | 2009-07-29 | Helmholtz-Zentrum Berlin für Materialien und Energie GmbH | Method and arrangement for crystal growth from fused metals or fused solutions |
Also Published As
Publication number | Publication date |
---|---|
JPS5715074B2 (en) | 1982-03-27 |
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