JPS5694672A - Manufacture of silicon semiconductor element - Google Patents
Manufacture of silicon semiconductor elementInfo
- Publication number
- JPS5694672A JPS5694672A JP17304579A JP17304579A JPS5694672A JP S5694672 A JPS5694672 A JP S5694672A JP 17304579 A JP17304579 A JP 17304579A JP 17304579 A JP17304579 A JP 17304579A JP S5694672 A JPS5694672 A JP S5694672A
- Authority
- JP
- Japan
- Prior art keywords
- film
- region
- polycrystalline
- contacting
- alloy layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76897—Formation of self-aligned vias or contact plugs, i.e. involving a lithographically uncritical step
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE:To enable forming of wiring into a complete dual layer by providing an Si-alloy layer which contacts ohmically with the connecting parts of polycrystalline Si of P and N types and by covering the whole surface with an SiO2 film when the polycrystalline Si of these types is applied to a diffusion layer and the like as a material for drawing out an electrode. CONSTITUTION:On a semiconductor substrate a source region 1 and a drain region 1' are formed diffusely and a field SiO2 film 2 is connected to the whole surface including the regions, while openings are made correspondingly to the regions 1 and 1'. Next, N type polycrystalline Si 3 contacting with the region 1 and P type polycrystalline Si 3' contacting with the region 1' are formed with extension on to the film 2 to be used for drawing an electrode. And, in the contacting part 7 is made a contact hole 6, wherein the Si-metal alloy layer 9 is embedded, and these are made to contact ohmically with each other. After that, the Si layers 3 and 3' and the alloy layer 9 are all covered with an SiO2 film 8 by the CVD method, whereby metal wiring on to the film 8 is made possible, and thus the integration of the device is improved.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17304579A JPS5694672A (en) | 1979-12-27 | 1979-12-27 | Manufacture of silicon semiconductor element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17304579A JPS5694672A (en) | 1979-12-27 | 1979-12-27 | Manufacture of silicon semiconductor element |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5694672A true JPS5694672A (en) | 1981-07-31 |
Family
ID=15953177
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP17304579A Pending JPS5694672A (en) | 1979-12-27 | 1979-12-27 | Manufacture of silicon semiconductor element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5694672A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5304833A (en) * | 1989-09-12 | 1994-04-19 | Mitsubishi Electric Corporation | Complementary MOS semiconductor device |
US6512298B2 (en) * | 2000-11-29 | 2003-01-28 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device and method for producing the same |
-
1979
- 1979-12-27 JP JP17304579A patent/JPS5694672A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5304833A (en) * | 1989-09-12 | 1994-04-19 | Mitsubishi Electric Corporation | Complementary MOS semiconductor device |
US6512298B2 (en) * | 2000-11-29 | 2003-01-28 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device and method for producing the same |
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