JPS56129337A - Insulative separation structure for semiconductor monolithic integrated circuit - Google Patents
Insulative separation structure for semiconductor monolithic integrated circuitInfo
- Publication number
- JPS56129337A JPS56129337A JP3196580A JP3196580A JPS56129337A JP S56129337 A JPS56129337 A JP S56129337A JP 3196580 A JP3196580 A JP 3196580A JP 3196580 A JP3196580 A JP 3196580A JP S56129337 A JPS56129337 A JP S56129337A
- Authority
- JP
- Japan
- Prior art keywords
- insulative
- epitaxial layer
- film
- substrate
- integrated circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Local Oxidation Of Silicon (AREA)
- Element Separation (AREA)
Abstract
PURPOSE:To separate the elements from each other by a structure wherein an insulative film is covered on the side surface of islands in the form of an epitaxial layer on a substrate and also on the upper surface of the substrate not in contact with the islands, then an insulative film with low melting temperature is superimposed thereon, and finally a part of the insulative film is buried under the surface of the epitaxial layer. CONSTITUTION:An N epitaxial layer 11 on the surface of a P type Si substrate including an N<+> buried layer 10 is plasma-etched after applying a regist mask 13. With the regist mask 13 having been removed, an SiO2 film 14 is formed through wet oxidation and PSG15 containing P at least 5mol% is superimposed thereon. The surface thereof is smoothed by the processing made at about 1,000 deg.C and in N2 and the SiO2 film 14 is exposed through the uniform etching. Thereafter, P base 16 and N emitter 17 are formed and then Al wiring 18 is applied according to the normal techniques. With this arrangement, insulative separation layers can be obtained at the conditions where the generation or growth of crystal defects are neglible, and it becomes also possible to obtain the monolithic IC with the improved accuracy of photograph etching and the improved degree of integration.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3196580A JPS56129337A (en) | 1980-03-13 | 1980-03-13 | Insulative separation structure for semiconductor monolithic integrated circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3196580A JPS56129337A (en) | 1980-03-13 | 1980-03-13 | Insulative separation structure for semiconductor monolithic integrated circuit |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS56129337A true JPS56129337A (en) | 1981-10-09 |
Family
ID=12345660
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3196580A Pending JPS56129337A (en) | 1980-03-13 | 1980-03-13 | Insulative separation structure for semiconductor monolithic integrated circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS56129337A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5929438A (en) * | 1982-08-11 | 1984-02-16 | Matsushita Electronics Corp | Manufacture of semiconductor device |
JPS59172246A (en) * | 1983-03-18 | 1984-09-28 | Seiko Instr & Electronics Ltd | Recessed-section isolated semiconductor device and manufacture thereof |
JPS61107739A (en) * | 1984-10-30 | 1986-05-26 | Nec Corp | Semiconductor device with strengthened radioactive ray stability |
JPS61183940A (en) * | 1985-02-08 | 1986-08-16 | Toshiba Corp | Manufacture of semiconductor device |
-
1980
- 1980-03-13 JP JP3196580A patent/JPS56129337A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5929438A (en) * | 1982-08-11 | 1984-02-16 | Matsushita Electronics Corp | Manufacture of semiconductor device |
JPS59172246A (en) * | 1983-03-18 | 1984-09-28 | Seiko Instr & Electronics Ltd | Recessed-section isolated semiconductor device and manufacture thereof |
JPS61107739A (en) * | 1984-10-30 | 1986-05-26 | Nec Corp | Semiconductor device with strengthened radioactive ray stability |
JPS61183940A (en) * | 1985-02-08 | 1986-08-16 | Toshiba Corp | Manufacture of semiconductor device |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP0029552A3 (en) | Method for producing a semiconductor device | |
JPS5516464A (en) | Method of forming wafer for semiconductor device | |
US3902936A (en) | Germanium bonded silicon substrate and method of manufacture | |
JPS56129337A (en) | Insulative separation structure for semiconductor monolithic integrated circuit | |
JPS5544713A (en) | Semiconductor device | |
JPS5522863A (en) | Manufacturing method for semiconductor device | |
JPS5513904A (en) | Semiconductor device and its manufacturing method | |
JPS5763842A (en) | Preparation of semiconductor integrated circuit | |
JPS5735368A (en) | Manufacture of semiconductor device | |
JPS54117690A (en) | Production of semiconductor device | |
JPS57133646A (en) | Semiconductor integrated circuit device and manufacture thereof | |
JPS6457641A (en) | Manufacture of semiconductor device | |
JPS55153325A (en) | Manufacture of semiconductor device | |
JPS5477570A (en) | Production of semiconductor element | |
JPS5687346A (en) | Manufacture of semiconductor device | |
JPS57106048A (en) | Manufacture of semiconductor device | |
JPS551150A (en) | Method of fabricating semiconductor device | |
JPS55113379A (en) | Method of fabrication for semiconductor pressure- sensitive element | |
JPS649639A (en) | Manufacture of insulating film for element isolation of semiconductor device | |
JPS57143862A (en) | Manufacture of semiconductor integrated circuit | |
JPS5678139A (en) | Manufacture of semiconductor integrated circuit | |
JPS5365676A (en) | Manufacture of integrated semiconductor device | |
JPS5797643A (en) | Manufacture of semiconductor device | |
JPS54134580A (en) | Production of semiconductor integrated circuit device | |
JPS5710252A (en) | Semiconductor device |