JPS6461635A - Semiconductor pressure sensor - Google Patents

Semiconductor pressure sensor

Info

Publication number
JPS6461635A
JPS6461635A JP21952087A JP21952087A JPS6461635A JP S6461635 A JPS6461635 A JP S6461635A JP 21952087 A JP21952087 A JP 21952087A JP 21952087 A JP21952087 A JP 21952087A JP S6461635 A JPS6461635 A JP S6461635A
Authority
JP
Japan
Prior art keywords
chip
pressure
semiconductor
pipe
sealing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP21952087A
Other languages
Japanese (ja)
Inventor
Shogo Asano
Kazuhiko Mizojiri
Takashi Morikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP21952087A priority Critical patent/JPS6461635A/en
Publication of JPS6461635A publication Critical patent/JPS6461635A/en
Pending legal-status Critical Current

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  • Measuring Fluid Pressure (AREA)

Abstract

PURPOSE:To simplify the structure of the semiconductor pressure sensor, to eliminate heat influence to a chip, and to improve pressure detection characteristics by forming a pressure conducting pipe of a material which is close in coefficient of heat expansion to a semiconductor chip and sealing the chip directly to the upper end of the pipe. CONSTITUTION:The pressure conducting pipe 2 is formed of the material whose coefficient of heat expansion approximates to that of the semiconductor single crystal chip 4 where a pressure sensing diaphragm 6 is formed. Then the semiconductor chip 4 is joined directly with the upper end of the pressure conducting pipe 2 by sealing and the pipe 2 and stem 1 are sealed hermetically with sealing glass 14. Consequently, the structure is simplified greatly, the temperature influence to the chip 4 in case of temperature variation is eliminated, and variation difference of the heat stress of the diaphragm to electrodes is eliminated to improve the pressure detection characteristics.
JP21952087A 1987-09-02 1987-09-02 Semiconductor pressure sensor Pending JPS6461635A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21952087A JPS6461635A (en) 1987-09-02 1987-09-02 Semiconductor pressure sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21952087A JPS6461635A (en) 1987-09-02 1987-09-02 Semiconductor pressure sensor

Publications (1)

Publication Number Publication Date
JPS6461635A true JPS6461635A (en) 1989-03-08

Family

ID=16736758

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21952087A Pending JPS6461635A (en) 1987-09-02 1987-09-02 Semiconductor pressure sensor

Country Status (1)

Country Link
JP (1) JPS6461635A (en)

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