JPS5536713A - Semiconductor strain gauge type absolute pressure sensor - Google Patents

Semiconductor strain gauge type absolute pressure sensor

Info

Publication number
JPS5536713A
JPS5536713A JP10860378A JP10860378A JPS5536713A JP S5536713 A JPS5536713 A JP S5536713A JP 10860378 A JP10860378 A JP 10860378A JP 10860378 A JP10860378 A JP 10860378A JP S5536713 A JPS5536713 A JP S5536713A
Authority
JP
Japan
Prior art keywords
thermal expansion
pressure
strain gauge
semiconductor strain
similar thermal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10860378A
Other languages
Japanese (ja)
Inventor
Kiyomitsu Suzuki
Motohisa Nishihara
Hiroji Kawakami
Satoshi Shimada
Shigeyuki Kobori
Minoru Takahashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP10860378A priority Critical patent/JPS5536713A/en
Publication of JPS5536713A publication Critical patent/JPS5536713A/en
Pending legal-status Critical Current

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  • Measuring Fluid Pressure (AREA)

Abstract

PURPOSE: To improve the airtightness of a semiconductor strain gauge type absolute pressure sensor by constructing respective members by materials having similar thermal expansion coefficients.
CONSTITUTION: A glass stem 1 is formed by glass member having similar thermal expansion coefficient to that of a silicon member 5 forming a semiconductor strain gauge. A pressure intake pipe 3 and leads 4 having equivalent thermal expansion coefficient are sealed in the glass stem 1, which is coated by the member 5 with a cap 10 having similar thermal expansion coefficient to that of the galss stem 1 and secured thereto. Since the respective members have similar thermal expansion coefficients, the adhered portion between the respective members is not thermally strained to a crack but retains preferable airtightness. Pressure to be measured is introduced through the pipe 3 into a diaphragm chamber 7 of the member 5 to allow a pressure-sensitive diaphragm 6 to be deformed in response to the difference between the pressure to be measured and the standard vacuum pressure in the chamber 11. This deformation is picked up by a lead 4 as electric amounts.
COPYRIGHT: (C)1980,JPO&Japio
JP10860378A 1978-09-06 1978-09-06 Semiconductor strain gauge type absolute pressure sensor Pending JPS5536713A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10860378A JPS5536713A (en) 1978-09-06 1978-09-06 Semiconductor strain gauge type absolute pressure sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10860378A JPS5536713A (en) 1978-09-06 1978-09-06 Semiconductor strain gauge type absolute pressure sensor

Publications (1)

Publication Number Publication Date
JPS5536713A true JPS5536713A (en) 1980-03-14

Family

ID=14488976

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10860378A Pending JPS5536713A (en) 1978-09-06 1978-09-06 Semiconductor strain gauge type absolute pressure sensor

Country Status (1)

Country Link
JP (1) JPS5536713A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58110832U (en) * 1982-01-25 1983-07-28 三菱電機株式会社 pressure electrical converter
JPS63230894A (en) * 1987-03-19 1988-09-27 Kamioka Kogyo Kk Cathode material for electrolysis and production thereof
JPS63262491A (en) * 1987-04-21 1988-10-28 Kamioka Kogyo Kk Anode for electrolysis and production thereof
JPH01172725A (en) * 1987-12-28 1989-07-07 Matsushita Electric Ind Co Ltd Semiconductor pressure sensor
JPH01172724A (en) * 1987-12-28 1989-07-07 Matsushita Electric Ind Co Ltd Semiconductor pressure sensor

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58110832U (en) * 1982-01-25 1983-07-28 三菱電機株式会社 pressure electrical converter
JPS63230894A (en) * 1987-03-19 1988-09-27 Kamioka Kogyo Kk Cathode material for electrolysis and production thereof
JPS63262491A (en) * 1987-04-21 1988-10-28 Kamioka Kogyo Kk Anode for electrolysis and production thereof
JPH01172725A (en) * 1987-12-28 1989-07-07 Matsushita Electric Ind Co Ltd Semiconductor pressure sensor
JPH01172724A (en) * 1987-12-28 1989-07-07 Matsushita Electric Ind Co Ltd Semiconductor pressure sensor

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