JPS55122125A - Semiconductor pressure detector - Google Patents

Semiconductor pressure detector

Info

Publication number
JPS55122125A
JPS55122125A JP2866579A JP2866579A JPS55122125A JP S55122125 A JPS55122125 A JP S55122125A JP 2866579 A JP2866579 A JP 2866579A JP 2866579 A JP2866579 A JP 2866579A JP S55122125 A JPS55122125 A JP S55122125A
Authority
JP
Japan
Prior art keywords
pressure
pressure detecting
detecting element
glass
bed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2866579A
Other languages
Japanese (ja)
Inventor
Yoshitaka Matsuoka
Michitaka Shimazoe
Yoshiki Yamamoto
Hideyuki Nemoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP2866579A priority Critical patent/JPS55122125A/en
Publication of JPS55122125A publication Critical patent/JPS55122125A/en
Pending legal-status Critical Current

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  • Measuring Fluid Pressure (AREA)

Abstract

PURPOSE: To obtain a stable detection performance by joining a reference pressure communicating path, which contains a glass and a metal beds, to the surface of the reference pressure chamber of the semicondutor pressure detecting element by anodic junction process.
CONSTITUTION: The pressure detecting element 6, first glass bed 7 the coefficient of thermal expanion of which is the same at that of the said element, thin metal plate 8, the second glass bed 9 and metal bed 10 the coefficient of thermal expansion of which is less are piled up and joined to each other firm and air-tightly by anodic- junction process to obtain the pressure detecting unit 5. The pressure detecting element is a p-type semiconductor, which is obtained by concaving a flat plate of n-type silicon and treating the concaved bottom 13 by the selective diffusion method, and forms a strain sensing resistor 14. When a pressure object to be detected is led to the pressure receiving chamber 22 through the introduction hole 16, the pressure is applied to the pressure detecting element 6 through the seal diaphragm 17 and sealed liquid 18, a strain proportional to the pressure is produced in the strain sensing resistor 14, a change of the resistance value is taken from the terminal 21 to convert itself into an electric signal.
COPYRIGHT: (C)1980,JPO&Japio
JP2866579A 1979-03-14 1979-03-14 Semiconductor pressure detector Pending JPS55122125A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2866579A JPS55122125A (en) 1979-03-14 1979-03-14 Semiconductor pressure detector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2866579A JPS55122125A (en) 1979-03-14 1979-03-14 Semiconductor pressure detector

Publications (1)

Publication Number Publication Date
JPS55122125A true JPS55122125A (en) 1980-09-19

Family

ID=12254797

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2866579A Pending JPS55122125A (en) 1979-03-14 1979-03-14 Semiconductor pressure detector

Country Status (1)

Country Link
JP (1) JPS55122125A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6085568A (en) * 1983-10-18 1985-05-15 Toyota Central Res & Dev Lab Inc Electrostatic junction
JPS6122222A (en) * 1984-07-11 1986-01-30 Hitachi Ltd Semiconductor pressure transducer
US4686764A (en) * 1986-04-22 1987-08-18 Motorola, Inc. Membrane protected pressure sensor
US4732042A (en) * 1986-04-22 1988-03-22 Motorola Inc. Cast membrane protected pressure sensor
US4842685A (en) * 1986-04-22 1989-06-27 Motorola, Inc. Method for forming a cast membrane protected pressure sensor

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6085568A (en) * 1983-10-18 1985-05-15 Toyota Central Res & Dev Lab Inc Electrostatic junction
JPS6122222A (en) * 1984-07-11 1986-01-30 Hitachi Ltd Semiconductor pressure transducer
JPH0546489B2 (en) * 1984-07-11 1993-07-14 Hitachi Ltd
US4686764A (en) * 1986-04-22 1987-08-18 Motorola, Inc. Membrane protected pressure sensor
US4732042A (en) * 1986-04-22 1988-03-22 Motorola Inc. Cast membrane protected pressure sensor
US4842685A (en) * 1986-04-22 1989-06-27 Motorola, Inc. Method for forming a cast membrane protected pressure sensor

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