JPS5766677A - Solar battery cell and manufacture thereof - Google Patents
Solar battery cell and manufacture thereofInfo
- Publication number
- JPS5766677A JPS5766677A JP55141728A JP14172880A JPS5766677A JP S5766677 A JPS5766677 A JP S5766677A JP 55141728 A JP55141728 A JP 55141728A JP 14172880 A JP14172880 A JP 14172880A JP S5766677 A JPS5766677 A JP S5766677A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- solar battery
- protective layer
- substrate
- battery cell
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 4
- 229910052710 silicon Inorganic materials 0.000 abstract 4
- 239000010703 silicon Substances 0.000 abstract 4
- 239000000758 substrate Substances 0.000 abstract 4
- 239000010410 layer Substances 0.000 abstract 3
- 239000011241 protective layer Substances 0.000 abstract 3
- 239000012535 impurity Substances 0.000 abstract 2
- 239000012300 argon atmosphere Substances 0.000 abstract 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 1
- 230000005670 electromagnetic radiation Effects 0.000 abstract 1
- 238000005468 ion implantation Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000001301 oxygen Substances 0.000 abstract 1
- 229910052760 oxygen Inorganic materials 0.000 abstract 1
- 230000003449 preventive effect Effects 0.000 abstract 1
- 238000004544 sputter deposition Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
PURPOSE:To prolong the lifetime of a solar battery by forming an oxidized silicon protective layer having less than 100ppm of impurity density on the photodetecting surface of a solar battery cell. CONSTITUTION:A p type silicon substrate 35 and an n type silicon substrate 33 are bonded, a surface electrode 31 and a reflection preventive film 32 are formed on the n type layer for receiving electromagnetic radiation or solar light, and an oxidized silicon protective layer 38 is covered on the electrode 31 and the film 32. At this time the layer 38 has less than 100ppm of impurity density and more than 1,000Angstrom of thickness. A back surface electrode 36 is formed on the other surface of the substrate 35. On the other hand, the layer 38 is heated higher than 200 deg.C at the substrate portion forming the protective layer and is formed by sputtering method or ion implantation method in argon atmosphere containing approx. 5% of oxygen.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55141728A JPS5766677A (en) | 1980-10-09 | 1980-10-09 | Solar battery cell and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55141728A JPS5766677A (en) | 1980-10-09 | 1980-10-09 | Solar battery cell and manufacture thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5766677A true JPS5766677A (en) | 1982-04-22 |
Family
ID=15298820
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP55141728A Pending JPS5766677A (en) | 1980-10-09 | 1980-10-09 | Solar battery cell and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5766677A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63501668A (en) * | 1985-10-11 | 1988-06-23 | ヌ−ケン・ゲ−・エム・ベ−・ハ− | solar cells |
| US4860066A (en) * | 1987-01-08 | 1989-08-22 | International Business Machines Corporation | Semiconductor electro-optical conversion |
| US7057102B2 (en) | 2000-11-10 | 2006-06-06 | Citizen Watch Co., Ltd. | Solar cell module and portable electronic apparatus with it |
-
1980
- 1980-10-09 JP JP55141728A patent/JPS5766677A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63501668A (en) * | 1985-10-11 | 1988-06-23 | ヌ−ケン・ゲ−・エム・ベ−・ハ− | solar cells |
| US4860066A (en) * | 1987-01-08 | 1989-08-22 | International Business Machines Corporation | Semiconductor electro-optical conversion |
| US7057102B2 (en) | 2000-11-10 | 2006-06-06 | Citizen Watch Co., Ltd. | Solar cell module and portable electronic apparatus with it |
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