JPS6450473A - Amorphous semiconductor solar cell - Google Patents
Amorphous semiconductor solar cellInfo
- Publication number
- JPS6450473A JPS6450473A JP62207872A JP20787287A JPS6450473A JP S6450473 A JPS6450473 A JP S6450473A JP 62207872 A JP62207872 A JP 62207872A JP 20787287 A JP20787287 A JP 20787287A JP S6450473 A JPS6450473 A JP S6450473A
- Authority
- JP
- Japan
- Prior art keywords
- metal
- substrate
- formula
- warpage
- metal compound
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 239000002184 metal Substances 0.000 abstract 6
- 239000000758 substrate Substances 0.000 abstract 4
- 150000002736 metal compounds Chemical class 0.000 abstract 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 2
- 239000011248 coating agent Substances 0.000 abstract 2
- 239000002075 main ingredient Substances 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
- 150000004703 alkoxides Chemical class 0.000 abstract 1
- 150000007942 carboxylates Chemical class 0.000 abstract 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 abstract 1
- 229910044991 metal oxide Inorganic materials 0.000 abstract 1
- 150000004706 metal oxides Chemical class 0.000 abstract 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 abstract 1
- 239000011347 resin Substances 0.000 abstract 1
- 229920005989 resin Polymers 0.000 abstract 1
- 229910001220 stainless steel Inorganic materials 0.000 abstract 1
- 239000010935 stainless steel Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
PURPOSE:To eliminate the generation of gas, to obtain a high adhesion strength and to eliminate the warpage of a metal substrate, by forming an insulating film layer of a metal oxide film in which a coating agent which contains organic metal compound as a main ingredient is applied to the substrate. CONSTITUTION:A plate having high contact resistance, such as a stainless steel is employed as a metal substrate 1, the surface is coated with a coating agent containing as a main ingredient organic metal compound, and it is cured to form an insulating film layer 6. As the organic metal compound, metal alkoxide excepting the silicon represented by a formula M(OR)n or metal carboxylate, etc., represented by a formula M(OCOR)n is properly employed. In the formula, M is metal element (except silicon), R is preferably methyl, ethyl, etc., and n is preferably 2-6. Thus, the layer 6 has high bonding strength to the surface of the metal plate and no resin layer. Accordingly, since gas is not generated and shrinkage is small, the warpage of the substrate is not substantially generated.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62207872A JPS6450473A (en) | 1987-08-20 | 1987-08-20 | Amorphous semiconductor solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62207872A JPS6450473A (en) | 1987-08-20 | 1987-08-20 | Amorphous semiconductor solar cell |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6450473A true JPS6450473A (en) | 1989-02-27 |
Family
ID=16546945
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62207872A Pending JPS6450473A (en) | 1987-08-20 | 1987-08-20 | Amorphous semiconductor solar cell |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6450473A (en) |
-
1987
- 1987-08-20 JP JP62207872A patent/JPS6450473A/en active Pending
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