JPS6450474A - Amorphous semiconductor solar cell - Google Patents
Amorphous semiconductor solar cellInfo
- Publication number
- JPS6450474A JPS6450474A JP62207873A JP20787387A JPS6450474A JP S6450474 A JPS6450474 A JP S6450474A JP 62207873 A JP62207873 A JP 62207873A JP 20787387 A JP20787387 A JP 20787387A JP S6450474 A JPS6450474 A JP S6450474A
- Authority
- JP
- Japan
- Prior art keywords
- phosphate
- metal
- curing agent
- metal substrate
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 239000002184 metal Substances 0.000 abstract 5
- 239000000758 substrate Substances 0.000 abstract 4
- 229910019142 PO4 Inorganic materials 0.000 abstract 3
- 239000003795 chemical substances by application Substances 0.000 abstract 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 abstract 3
- 239000010452 phosphate Substances 0.000 abstract 3
- 229920000388 Polyphosphate Polymers 0.000 abstract 2
- 239000011247 coating layer Substances 0.000 abstract 2
- 239000010410 layer Substances 0.000 abstract 2
- 239000001205 polyphosphate Substances 0.000 abstract 2
- 235000011176 polyphosphates Nutrition 0.000 abstract 2
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 abstract 1
- 238000006757 chemical reactions by type Methods 0.000 abstract 1
- 229910044991 metal oxide Inorganic materials 0.000 abstract 1
- 150000004706 metal oxides Chemical class 0.000 abstract 1
- 239000011347 resin Substances 0.000 abstract 1
- 229920005989 resin Polymers 0.000 abstract 1
- 150000003839 salts Chemical class 0.000 abstract 1
- 229910001220 stainless steel Inorganic materials 0.000 abstract 1
- 239000010935 stainless steel Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
PURPOSE:To eliminate the generation of gas, to obtain a high adhesion strength and to eliminate the warpage of a metal substrate, by forming an insulating coating layer of a reaction type film in which the metal substrate is coated with phosphate and polyphosphate together with curing agent and cured. CONSTITUTION:A plate having high contact resistance, such as a stainless steel is employed as a metal substrate 1, the surface is coated with phosphate and polyphosphate together with curing agent, and cured to form an insulating coating layer 6. The phosphate employs polymethaphosphate, etc., and the curing agent preferably employs those mainly containing one type of metal salt, metal oxide, etc., except silicate. Thus, since the layer 6 has high adhesion strength to the surface of the metal plate and no resin layer, gas is not generated and since shrinkage is small, the warpage of the substrate is not substantially generated.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62207873A JPS6450474A (en) | 1987-08-20 | 1987-08-20 | Amorphous semiconductor solar cell |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62207873A JPS6450474A (en) | 1987-08-20 | 1987-08-20 | Amorphous semiconductor solar cell |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6450474A true JPS6450474A (en) | 1989-02-27 |
Family
ID=16546963
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62207873A Pending JPS6450474A (en) | 1987-08-20 | 1987-08-20 | Amorphous semiconductor solar cell |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6450474A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001189480A (en) * | 1999-12-30 | 2001-07-10 | Honda Motor Co Ltd | Method for manufacturing solar cell |
JP2001189475A (en) * | 1999-12-30 | 2001-07-10 | Honda Motor Co Ltd | Manufacturing method of solar cell |
-
1987
- 1987-08-20 JP JP62207873A patent/JPS6450474A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001189480A (en) * | 1999-12-30 | 2001-07-10 | Honda Motor Co Ltd | Method for manufacturing solar cell |
JP2001189475A (en) * | 1999-12-30 | 2001-07-10 | Honda Motor Co Ltd | Manufacturing method of solar cell |
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