JPS5768016A - Gas phase growth for 3[5 group compound semiconductor - Google Patents

Gas phase growth for 3[5 group compound semiconductor

Info

Publication number
JPS5768016A
JPS5768016A JP14335680A JP14335680A JPS5768016A JP S5768016 A JPS5768016 A JP S5768016A JP 14335680 A JP14335680 A JP 14335680A JP 14335680 A JP14335680 A JP 14335680A JP S5768016 A JPS5768016 A JP S5768016A
Authority
JP
Japan
Prior art keywords
region
group element
tube
iii
partition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14335680A
Other languages
Japanese (ja)
Other versions
JPH0328054B2 (en
Inventor
Takashi Mizutani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP14335680A priority Critical patent/JPS5768016A/en
Publication of JPS5768016A publication Critical patent/JPS5768016A/en
Publication of JPH0328054B2 publication Critical patent/JPH0328054B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02392—Phosphides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02543—Phosphides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)

Abstract

PURPOSE:To obtain an epitaxially grown layer with good reproducibility in a halide process halogen gas phase growing device for III-V group compound semiconductor by introducing halogen gas, halogenated hydrogen, V-group element halide to the region to the mixture region of III group and V-group element halide to the region to the mixture region of III group and V group element halides or at the region of downstream or upstream of the mixed region or substrate. CONSTITUTION:A partition is provided at one end of a reaction tube, a boat in which Ga 6 of III group element is filled is placed on the partition, and a boat in which In 11 of III group element is similarly filled is arranged on the inner wall of the reaction tube under the partition. Independent HCl gas guide tubes 12, 13 are provided for the Ga 6 and the In 11, a bypass tube 9 extending to the midway of the reaction tube is provided on the Ga 6, and an InP substrate 14 to be grown at the downstream of the tube 9 is arranged so that the surface is inclined. In this manner the tubes 12, 13 are introduced with HCl to produce vapors of Ga and In, AsH3, PH3, and HCl gases are introduced from the tube 9 to the mixed region, thereby producing an InGaAsP layer is produced on the substrate 14.
JP14335680A 1980-10-14 1980-10-14 Gas phase growth for 3[5 group compound semiconductor Granted JPS5768016A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14335680A JPS5768016A (en) 1980-10-14 1980-10-14 Gas phase growth for 3[5 group compound semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14335680A JPS5768016A (en) 1980-10-14 1980-10-14 Gas phase growth for 3[5 group compound semiconductor

Publications (2)

Publication Number Publication Date
JPS5768016A true JPS5768016A (en) 1982-04-26
JPH0328054B2 JPH0328054B2 (en) 1991-04-17

Family

ID=15336875

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14335680A Granted JPS5768016A (en) 1980-10-14 1980-10-14 Gas phase growth for 3[5 group compound semiconductor

Country Status (1)

Country Link
JP (1) JPS5768016A (en)

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
JAPAN.J.APPL PHYS=1977 *

Also Published As

Publication number Publication date
JPH0328054B2 (en) 1991-04-17

Similar Documents

Publication Publication Date Title
US4848273A (en) Epitaxial growth method and apparatus therefor
US4253887A (en) Method of depositing layers of semi-insulating gallium arsenide
JPS5768016A (en) Gas phase growth for 3[5 group compound semiconductor
Mizutani et al. Suppression of extraneous wall deposition by HCl injection in hydride vapor phase epitaxy of III–V semiconductors
JPS5825223A (en) Vapor growth unit for 3-5 compound semiconductor
JPS56164523A (en) Vapor phase growth of semiconductor
JPS57123895A (en) Vapor-phase epitaxial growing apparatus
JPS5491175A (en) Vapour-phase growth method of compound semiconductor crystal
JPS57128022A (en) Forming method for silicon epitaxially grown film
JPH0699231B2 (en) Vapor growth method and apparatus
Flemish et al. Altering the Composition of InGaAsP Grown by the Hydride Technique by Introducing HCl Downstream
JPS5737823A (en) Vapor phase growth device
JPS57145314A (en) Vapor growth apparatus for 3-5 group compound semiconductor
JPS6451395A (en) Reaction tube for vapor phase epitaxy
JPS5727999A (en) Vapor phase growing method for gan
JPS60192324A (en) Vapor phase epitaxial growth apparatus of group iii-v compound semiconductor
JPS57149721A (en) Method of vapor epitaxial growth
JPS6425520A (en) Vapor growth method for compound semiconductor
JPS647614A (en) Compound semiconductor thin film
JPS56114332A (en) Forming method for semiconductor insulating film
JPS6163599A (en) System for vapor growth
JPS6490523A (en) Epitaxial growth method for ingaasp mixed crystal
JPH0665209B2 (en) Semiconductor manufacturing equipment by vapor phase growth
JPS5710921A (en) Gas phase epitaxial growth device
JPS5513988A (en) Apparatus for semiconductor vapor growth