JPS642319A - Heat treatment - Google Patents
Heat treatmentInfo
- Publication number
- JPS642319A JPS642319A JP15810687A JP15810687A JPS642319A JP S642319 A JPS642319 A JP S642319A JP 15810687 A JP15810687 A JP 15810687A JP 15810687 A JP15810687 A JP 15810687A JP S642319 A JPS642319 A JP S642319A
- Authority
- JP
- Japan
- Prior art keywords
- conducted
- heat treatment
- effect
- mesfet
- implanted
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE: To prevent the escape of group V ions when a high temperature annealing is conducted on a III-V semiconductor as well as to eliminate an adverse effect in an MESFET by a method wherein, after group V ions have been implanted into the semiconductor through a diffusion-preventing film, a heat treatment is conducted.
CONSTITUTION: After an Si3N4 cap film 2 has been formed on a GaAs substrate l, arsenic is implanted 4, and then a high temperature annealing is conducted in an H2 atmosphere. As a result, the the effect of prevention of arsenic evaporation is obtained, and the side-gate effect in the MESFET can be suppressed.
COPYRIGHT: (C)1989,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62158106A JPH0758700B2 (en) | 1987-06-24 | 1987-06-24 | Heat treatment method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62158106A JPH0758700B2 (en) | 1987-06-24 | 1987-06-24 | Heat treatment method |
Publications (3)
Publication Number | Publication Date |
---|---|
JPH012319A JPH012319A (en) | 1989-01-06 |
JPS642319A true JPS642319A (en) | 1989-01-06 |
JPH0758700B2 JPH0758700B2 (en) | 1995-06-21 |
Family
ID=15664433
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62158106A Expired - Lifetime JPH0758700B2 (en) | 1987-06-24 | 1987-06-24 | Heat treatment method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0758700B2 (en) |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61144822A (en) * | 1984-12-19 | 1986-07-02 | Sharp Corp | Formation of gaas conductive layer |
-
1987
- 1987-06-24 JP JP62158106A patent/JPH0758700B2/en not_active Expired - Lifetime
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61144822A (en) * | 1984-12-19 | 1986-07-02 | Sharp Corp | Formation of gaas conductive layer |
Also Published As
Publication number | Publication date |
---|---|
JPH0758700B2 (en) | 1995-06-21 |
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