JPS642319A - Heat treatment - Google Patents

Heat treatment

Info

Publication number
JPS642319A
JPS642319A JP15810687A JP15810687A JPS642319A JP S642319 A JPS642319 A JP S642319A JP 15810687 A JP15810687 A JP 15810687A JP 15810687 A JP15810687 A JP 15810687A JP S642319 A JPS642319 A JP S642319A
Authority
JP
Japan
Prior art keywords
conducted
heat treatment
effect
mesfet
implanted
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15810687A
Other languages
Japanese (ja)
Other versions
JPH012319A (en
JPH0758700B2 (en
Inventor
Yasuo Ono
Norio Goto
Shuji Asai
Tadatoshi Nozaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP62158106A priority Critical patent/JPH0758700B2/en
Publication of JPH012319A publication Critical patent/JPH012319A/en
Publication of JPS642319A publication Critical patent/JPS642319A/en
Publication of JPH0758700B2 publication Critical patent/JPH0758700B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE: To prevent the escape of group V ions when a high temperature annealing is conducted on a III-V semiconductor as well as to eliminate an adverse effect in an MESFET by a method wherein, after group V ions have been implanted into the semiconductor through a diffusion-preventing film, a heat treatment is conducted.
CONSTITUTION: After an Si3N4 cap film 2 has been formed on a GaAs substrate l, arsenic is implanted 4, and then a high temperature annealing is conducted in an H2 atmosphere. As a result, the the effect of prevention of arsenic evaporation is obtained, and the side-gate effect in the MESFET can be suppressed.
COPYRIGHT: (C)1989,JPO&Japio
JP62158106A 1987-06-24 1987-06-24 Heat treatment method Expired - Lifetime JPH0758700B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62158106A JPH0758700B2 (en) 1987-06-24 1987-06-24 Heat treatment method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62158106A JPH0758700B2 (en) 1987-06-24 1987-06-24 Heat treatment method

Publications (3)

Publication Number Publication Date
JPH012319A JPH012319A (en) 1989-01-06
JPS642319A true JPS642319A (en) 1989-01-06
JPH0758700B2 JPH0758700B2 (en) 1995-06-21

Family

ID=15664433

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62158106A Expired - Lifetime JPH0758700B2 (en) 1987-06-24 1987-06-24 Heat treatment method

Country Status (1)

Country Link
JP (1) JPH0758700B2 (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61144822A (en) * 1984-12-19 1986-07-02 Sharp Corp Formation of gaas conductive layer

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61144822A (en) * 1984-12-19 1986-07-02 Sharp Corp Formation of gaas conductive layer

Also Published As

Publication number Publication date
JPH0758700B2 (en) 1995-06-21

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