JPS5650520A - Processing method of semiconductor substrate - Google Patents

Processing method of semiconductor substrate

Info

Publication number
JPS5650520A
JPS5650520A JP12668679A JP12668679A JPS5650520A JP S5650520 A JPS5650520 A JP S5650520A JP 12668679 A JP12668679 A JP 12668679A JP 12668679 A JP12668679 A JP 12668679A JP S5650520 A JPS5650520 A JP S5650520A
Authority
JP
Japan
Prior art keywords
substrate
decomposition pressure
ion
gaas
heat
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12668679A
Other languages
Japanese (ja)
Other versions
JPH0143454B2 (en
Inventor
Jiro Kasahara
Kenji Morisane
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP12668679A priority Critical patent/JPS5650520A/en
Publication of JPS5650520A publication Critical patent/JPS5650520A/en
Publication of JPH0143454B2 publication Critical patent/JPH0143454B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To prevent evaporation of V group elements from a substrate by a method wherein a III-V group semiconductor substrate is contacted to a V group element containing semiconductor indicating a higher V group element decomposition pressure than that of the former and a heat treatment is performed. CONSTITUTION:On an ion-injected GaAs substrate 1 to be heat-treated, GaAs substrate 2 on which more amount of ion has been injected is closely adhered, they are laminated on a quartz susceptor 5 and a heat-treatment is performed. Hence, as a larger damaged region is obtained in proportion to the increasing amount of ion injection and an As decomposition pressure is raised, the As decomposition pressure of the substrate 1 is relatively lowered, and a thermally stabilized heat treatment can be performed. Besides, when an InAs is used as a substrate 2, it has a high decomposition pressure than the GaAs and an ion injection into the substrate 2 becomes unnecessary.
JP12668679A 1979-10-01 1979-10-01 Processing method of semiconductor substrate Granted JPS5650520A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12668679A JPS5650520A (en) 1979-10-01 1979-10-01 Processing method of semiconductor substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12668679A JPS5650520A (en) 1979-10-01 1979-10-01 Processing method of semiconductor substrate

Publications (2)

Publication Number Publication Date
JPS5650520A true JPS5650520A (en) 1981-05-07
JPH0143454B2 JPH0143454B2 (en) 1989-09-20

Family

ID=14941337

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12668679A Granted JPS5650520A (en) 1979-10-01 1979-10-01 Processing method of semiconductor substrate

Country Status (1)

Country Link
JP (1) JPS5650520A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0111085A2 (en) * 1982-11-10 1984-06-20 International Business Machines Corporation Ion implantation process for compound semiconductor
JPS6130030A (en) * 1984-07-12 1986-02-12 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション Method of annealing multi-element semiconductor
EP0226311A2 (en) * 1985-11-01 1987-06-24 Gte Laboratories Incorporated Process for annealing III-V compound semiconductor material
JPS63248127A (en) * 1987-04-02 1988-10-14 Nec Corp Heat treatment of inp substrate

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS492511A (en) * 1972-04-20 1974-01-10
JPS54162451A (en) * 1978-06-13 1979-12-24 Matsushita Electric Ind Co Ltd Heat treatment method of compound semiconductor and its heat treatment unit

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS492511A (en) * 1972-04-20 1974-01-10
JPS54162451A (en) * 1978-06-13 1979-12-24 Matsushita Electric Ind Co Ltd Heat treatment method of compound semiconductor and its heat treatment unit

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0111085A2 (en) * 1982-11-10 1984-06-20 International Business Machines Corporation Ion implantation process for compound semiconductor
JPS6130030A (en) * 1984-07-12 1986-02-12 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション Method of annealing multi-element semiconductor
JPH039612B2 (en) * 1984-07-12 1991-02-08 Intaanashonaru Bijinesu Mashiinzu Corp
EP0226311A2 (en) * 1985-11-01 1987-06-24 Gte Laboratories Incorporated Process for annealing III-V compound semiconductor material
EP0226311A3 (en) * 1985-11-01 1988-09-21 Gte Laboratories Incorporated Process for annealing iii-v compound semiconductor material
JPS63248127A (en) * 1987-04-02 1988-10-14 Nec Corp Heat treatment of inp substrate

Also Published As

Publication number Publication date
JPH0143454B2 (en) 1989-09-20

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