JPS5650520A - Processing method of semiconductor substrate - Google Patents
Processing method of semiconductor substrateInfo
- Publication number
- JPS5650520A JPS5650520A JP12668679A JP12668679A JPS5650520A JP S5650520 A JPS5650520 A JP S5650520A JP 12668679 A JP12668679 A JP 12668679A JP 12668679 A JP12668679 A JP 12668679A JP S5650520 A JPS5650520 A JP S5650520A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- decomposition pressure
- ion
- gaas
- heat
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 title abstract 8
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 238000003672 processing method Methods 0.000 title 1
- 238000000354 decomposition reaction Methods 0.000 abstract 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 3
- 238000010438 heat treatment Methods 0.000 abstract 3
- 238000002347 injection Methods 0.000 abstract 2
- 239000007924 injection Substances 0.000 abstract 2
- 229910000673 Indium arsenide Inorganic materials 0.000 abstract 1
- 230000008020 evaporation Effects 0.000 abstract 1
- 238000001704 evaporation Methods 0.000 abstract 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000010453 quartz Substances 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE:To prevent evaporation of V group elements from a substrate by a method wherein a III-V group semiconductor substrate is contacted to a V group element containing semiconductor indicating a higher V group element decomposition pressure than that of the former and a heat treatment is performed. CONSTITUTION:On an ion-injected GaAs substrate 1 to be heat-treated, GaAs substrate 2 on which more amount of ion has been injected is closely adhered, they are laminated on a quartz susceptor 5 and a heat-treatment is performed. Hence, as a larger damaged region is obtained in proportion to the increasing amount of ion injection and an As decomposition pressure is raised, the As decomposition pressure of the substrate 1 is relatively lowered, and a thermally stabilized heat treatment can be performed. Besides, when an InAs is used as a substrate 2, it has a high decomposition pressure than the GaAs and an ion injection into the substrate 2 becomes unnecessary.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12668679A JPS5650520A (en) | 1979-10-01 | 1979-10-01 | Processing method of semiconductor substrate |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12668679A JPS5650520A (en) | 1979-10-01 | 1979-10-01 | Processing method of semiconductor substrate |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5650520A true JPS5650520A (en) | 1981-05-07 |
JPH0143454B2 JPH0143454B2 (en) | 1989-09-20 |
Family
ID=14941337
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12668679A Granted JPS5650520A (en) | 1979-10-01 | 1979-10-01 | Processing method of semiconductor substrate |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5650520A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0111085A2 (en) * | 1982-11-10 | 1984-06-20 | International Business Machines Corporation | Ion implantation process for compound semiconductor |
JPS6130030A (en) * | 1984-07-12 | 1986-02-12 | インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション | Method of annealing multi-element semiconductor |
EP0226311A2 (en) * | 1985-11-01 | 1987-06-24 | Gte Laboratories Incorporated | Process for annealing III-V compound semiconductor material |
JPS63248127A (en) * | 1987-04-02 | 1988-10-14 | Nec Corp | Heat treatment of inp substrate |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS492511A (en) * | 1972-04-20 | 1974-01-10 | ||
JPS54162451A (en) * | 1978-06-13 | 1979-12-24 | Matsushita Electric Ind Co Ltd | Heat treatment method of compound semiconductor and its heat treatment unit |
-
1979
- 1979-10-01 JP JP12668679A patent/JPS5650520A/en active Granted
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS492511A (en) * | 1972-04-20 | 1974-01-10 | ||
JPS54162451A (en) * | 1978-06-13 | 1979-12-24 | Matsushita Electric Ind Co Ltd | Heat treatment method of compound semiconductor and its heat treatment unit |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0111085A2 (en) * | 1982-11-10 | 1984-06-20 | International Business Machines Corporation | Ion implantation process for compound semiconductor |
JPS6130030A (en) * | 1984-07-12 | 1986-02-12 | インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション | Method of annealing multi-element semiconductor |
JPH039612B2 (en) * | 1984-07-12 | 1991-02-08 | Intaanashonaru Bijinesu Mashiinzu Corp | |
EP0226311A2 (en) * | 1985-11-01 | 1987-06-24 | Gte Laboratories Incorporated | Process for annealing III-V compound semiconductor material |
EP0226311A3 (en) * | 1985-11-01 | 1988-09-21 | Gte Laboratories Incorporated | Process for annealing iii-v compound semiconductor material |
JPS63248127A (en) * | 1987-04-02 | 1988-10-14 | Nec Corp | Heat treatment of inp substrate |
Also Published As
Publication number | Publication date |
---|---|
JPH0143454B2 (en) | 1989-09-20 |
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