JPS54162960A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS54162960A JPS54162960A JP7234178A JP7234178A JPS54162960A JP S54162960 A JPS54162960 A JP S54162960A JP 7234178 A JP7234178 A JP 7234178A JP 7234178 A JP7234178 A JP 7234178A JP S54162960 A JPS54162960 A JP S54162960A
- Authority
- JP
- Japan
- Prior art keywords
- crystal defect
- crystal
- substrate
- giving
- poly
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE: To increase the activation rate and then to reduce occurrence of the crystal defect or secure recovery of the crystal defect by giving the chemical evaporation of the silicon nitride film on the substrate and then giving the heat treatment in the hydrogen atmosphere via the tool composed of the poly-crystal gallium arsenide.
CONSTITUTION: Si6 is injected to semiinsulating GaAs substrate 5 with acceleration voltage 150ReV, for example, and the formed silicon nitride film 7 is stuck to the substrate through the chemical evaporation method. After this, the heat treatment is given in the hydrogen atmosphere by means of tool 8 made of the poly-crystal gallium arsenide. In this way, the activation rate can be increased with reduction of occurrence of the crystal defect or recovery of the crystal defect ensured.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7234178A JPS54162960A (en) | 1978-06-14 | 1978-06-14 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7234178A JPS54162960A (en) | 1978-06-14 | 1978-06-14 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS54162960A true JPS54162960A (en) | 1979-12-25 |
Family
ID=13486489
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7234178A Pending JPS54162960A (en) | 1978-06-14 | 1978-06-14 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS54162960A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5638827A (en) * | 1979-09-07 | 1981-04-14 | Fujitsu Ltd | Manufacture of semiconductor device |
| JPS57102075A (en) * | 1980-12-17 | 1982-06-24 | Fujitsu Ltd | Semiconductor device and manufacture thereof |
| JPS57166025A (en) * | 1981-04-06 | 1982-10-13 | Matsushita Electric Ind Co Ltd | Heat treatment method for compound semiconductor device |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51144270A (en) * | 1975-06-05 | 1976-12-11 | Seiko Instr & Electronics Ltd | Alarm-loaded electronic clock |
| JPS5247677A (en) * | 1975-10-14 | 1977-04-15 | Matsushita Electric Ind Co Ltd | Process for production of semiconductor device |
-
1978
- 1978-06-14 JP JP7234178A patent/JPS54162960A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51144270A (en) * | 1975-06-05 | 1976-12-11 | Seiko Instr & Electronics Ltd | Alarm-loaded electronic clock |
| JPS5247677A (en) * | 1975-10-14 | 1977-04-15 | Matsushita Electric Ind Co Ltd | Process for production of semiconductor device |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5638827A (en) * | 1979-09-07 | 1981-04-14 | Fujitsu Ltd | Manufacture of semiconductor device |
| JPS57102075A (en) * | 1980-12-17 | 1982-06-24 | Fujitsu Ltd | Semiconductor device and manufacture thereof |
| JPS57166025A (en) * | 1981-04-06 | 1982-10-13 | Matsushita Electric Ind Co Ltd | Heat treatment method for compound semiconductor device |
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