JPS6446974A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS6446974A
JPS6446974A JP62203771A JP20377187A JPS6446974A JP S6446974 A JPS6446974 A JP S6446974A JP 62203771 A JP62203771 A JP 62203771A JP 20377187 A JP20377187 A JP 20377187A JP S6446974 A JPS6446974 A JP S6446974A
Authority
JP
Japan
Prior art keywords
region
sidewall
diffusion
diffusion region
low concentration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62203771A
Other languages
Japanese (ja)
Inventor
Masahiko Nozaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP62203771A priority Critical patent/JPS6446974A/en
Publication of JPS6446974A publication Critical patent/JPS6446974A/en
Pending legal-status Critical Current

Links

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To give each low concentration diffusion region a symmetrical property with respect to a gate electrode, stabilize device chracteristics, and simplify a manufacture process, by a method wherein arsenic is selectively ion-implanted on a semiconductor substrate by using the gate electrode and a sidewall for masks and a heat-treatment is performed. CONSTITUTION:Since each low concentration N<-> diffusion region is formed by diffusion of phosphorus P from a sidewall 18 of a PSG film formed on the gate oxide film 16 and the sidewall of a gate electrode 17, each region can be formed in perfectly symmetrical positions, and device characteristics are stabilized thereby. After the formation of the sidewall 18 of the PSG film and the selective ion-implantation of arsenic As, each low concentration N<-> diffusion region is formed by only one-time heat-treatment, and each high concentration N<+> diffusion region turning to a source-drain region is formed by diffusion of arsenic As implanted at the same time. Thereby, the manufacturing process of each low concentration N<-> diffusion region and each high concentration region mentioned above can be simplified.
JP62203771A 1987-08-17 1987-08-17 Manufacture of semiconductor device Pending JPS6446974A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62203771A JPS6446974A (en) 1987-08-17 1987-08-17 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62203771A JPS6446974A (en) 1987-08-17 1987-08-17 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS6446974A true JPS6446974A (en) 1989-02-21

Family

ID=16479535

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62203771A Pending JPS6446974A (en) 1987-08-17 1987-08-17 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS6446974A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5302195A (en) * 1991-05-22 1994-04-12 Xerox Corporation Ink compositions containing cyclodextrins
US5913116A (en) * 1997-01-08 1999-06-15 Advanced Micro Devices Method of manufacturing an active region of a semiconductor by diffusing a dopant out of a sidewall spacer

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5302195A (en) * 1991-05-22 1994-04-12 Xerox Corporation Ink compositions containing cyclodextrins
US5913116A (en) * 1997-01-08 1999-06-15 Advanced Micro Devices Method of manufacturing an active region of a semiconductor by diffusing a dopant out of a sidewall spacer

Similar Documents

Publication Publication Date Title
IE811379L (en) Manufacturing a semiconductor device
JPS6436073A (en) Manufacture of semiconductor device
JPS5591877A (en) Manufacture of semiconductor device
JPS6446974A (en) Manufacture of semiconductor device
JPS57192063A (en) Manufacture of semiconductor device
JPS56138920A (en) Method of selection and diffusion for impurities
JPS5694773A (en) Manufacturing method of semiconductor device
JPS5710969A (en) Semiconductor device and manufacture thereof
JPS55107229A (en) Method of manufacturing semiconductor device
JPS645066A (en) Manufacture of field effect transistor
JPS5638868A (en) Manufacture of semiconductor device
JPS5783059A (en) Manufacture of mos type semiconductor device
JPS5673470A (en) Manufacture of semiconductor device
JPS57160171A (en) Manufacture of semiconductor device
JPS6481268A (en) Manufacture of semiconductor device
JPS57136358A (en) Integrated circuit device and manufacture thereof
JPS57111060A (en) Manufacture of semiconductor device
JPS6436075A (en) Semiconductor device and manufacture thereof
JPS5737882A (en) Compound semiconductor device and production thereof
JPS6481364A (en) Manufacture of semiconductor device
JPS6453458A (en) Semiconductor device
JPS6481355A (en) Manufacture of semiconductor device
JPS6468975A (en) Manufacture of junction fet
JPS56134762A (en) Manufacturing of bipolar semiconductor device
JPS5467780A (en) High integration ic