JPS57115823A - Manufacture of amorphous semiconductor film - Google Patents

Manufacture of amorphous semiconductor film

Info

Publication number
JPS57115823A
JPS57115823A JP56002067A JP206781A JPS57115823A JP S57115823 A JPS57115823 A JP S57115823A JP 56002067 A JP56002067 A JP 56002067A JP 206781 A JP206781 A JP 206781A JP S57115823 A JPS57115823 A JP S57115823A
Authority
JP
Japan
Prior art keywords
film
amorphous
semiconductor film
amorphous semiconductor
vicinity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56002067A
Other languages
Japanese (ja)
Other versions
JPH0227824B2 (en
Inventor
Hisao Kondo
Masao Aiga
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP56002067A priority Critical patent/JPS57115823A/en
Publication of JPS57115823A publication Critical patent/JPS57115823A/en
Publication of JPH0227824B2 publication Critical patent/JPH0227824B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56—After-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Light Receiving Elements (AREA)

Abstract

PURPOSE:To obtain a film having stable quality with a short annealing time by a method wherein the annealing is performed in hydrogen plasma after the amorphous semiconductor film formed by glow discharge has been heat-treated in the specified temperature range. CONSTITUTION:The amorphous semiconductor film formed by glow discharge method is heated at the temperature range of 400-500 deg.C. As a result, Si-H2 and (Si-H2)n are decomposed and Si is generated, but Si<-> is obtained by rearrangement of elemental Si. However, as the evaporation of hydrogen is active in the vicinity of the surface of the amorphous film, a large quantity of the Si<-> ions exists there, but the quantity in the film is small. Subsequently, when the amorphous film is annealed in hydrogen plasma, the dangling bonds (Si<->) are eliminated. In this case, as a considerable quantity of Si-H pairs is contained in the amorphous film and also a number of dangling bonds exist in the vicinity of the film surface, the annealing time can be reduced even when the amorphous film is thick.
JP56002067A 1981-01-12 1981-01-12 Manufacture of amorphous semiconductor film Granted JPS57115823A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56002067A JPS57115823A (en) 1981-01-12 1981-01-12 Manufacture of amorphous semiconductor film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56002067A JPS57115823A (en) 1981-01-12 1981-01-12 Manufacture of amorphous semiconductor film

Publications (2)

Publication Number Publication Date
JPS57115823A true JPS57115823A (en) 1982-07-19
JPH0227824B2 JPH0227824B2 (en) 1990-06-20

Family

ID=11518993

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56002067A Granted JPS57115823A (en) 1981-01-12 1981-01-12 Manufacture of amorphous semiconductor film

Country Status (1)

Country Link
JP (1) JPS57115823A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63123900A (en) * 1986-10-24 1988-05-27 シーメンス、アクチエンゲゼルシヤフト Inactivation of crystal defect or like
JPS63283119A (en) * 1987-05-15 1988-11-21 Kanegafuchi Chem Ind Co Ltd Amorphous semiconductor, amorphous semiconductor device and manufacture thereof
JPH06268240A (en) * 1993-03-10 1994-09-22 Hitachi Ltd Thin-film solar cell and manufacture thereof
US10497572B2 (en) 2018-02-22 2019-12-03 Kabushiki Kaisha Toshiba Method for manufacturing semiconductor device

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05277848A (en) * 1992-03-30 1993-10-26 Nissan Shatai Co Ltd Car body support device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63123900A (en) * 1986-10-24 1988-05-27 シーメンス、アクチエンゲゼルシヤフト Inactivation of crystal defect or like
JPS63283119A (en) * 1987-05-15 1988-11-21 Kanegafuchi Chem Ind Co Ltd Amorphous semiconductor, amorphous semiconductor device and manufacture thereof
JPH06268240A (en) * 1993-03-10 1994-09-22 Hitachi Ltd Thin-film solar cell and manufacture thereof
US10497572B2 (en) 2018-02-22 2019-12-03 Kabushiki Kaisha Toshiba Method for manufacturing semiconductor device

Also Published As

Publication number Publication date
JPH0227824B2 (en) 1990-06-20

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