JPS6423144A - Method for detecting flaw in thin film layer of crystal substrate - Google Patents

Method for detecting flaw in thin film layer of crystal substrate

Info

Publication number
JPS6423144A
JPS6423144A JP18031287A JP18031287A JPS6423144A JP S6423144 A JPS6423144 A JP S6423144A JP 18031287 A JP18031287 A JP 18031287A JP 18031287 A JP18031287 A JP 18031287A JP S6423144 A JPS6423144 A JP S6423144A
Authority
JP
Japan
Prior art keywords
thin film
film layer
angle
incidence
laser beam
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP18031287A
Other languages
Japanese (ja)
Other versions
JPH0625740B2 (en
Inventor
Tomoya Ogawa
Shiyuuji Nangou
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RATOTSUKU SYST ENG KK
Original Assignee
RATOTSUKU SYST ENG KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RATOTSUKU SYST ENG KK filed Critical RATOTSUKU SYST ENG KK
Priority to JP62180312A priority Critical patent/JPH0625740B2/en
Publication of JPS6423144A publication Critical patent/JPS6423144A/en
Publication of JPH0625740B2 publication Critical patent/JPH0625740B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Landscapes

  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

PURPOSE:To inspect a crystal flow in a thin film layer without any destruction by projecting a laser beam on the thin film layer at a specific angle of incidence and generating a pseudo surface wave in the thin film layer. CONSTITUTION:The laser beam 100 from a laser source 34 is incident on a prism 22 through an optical system 36, but the angle theta of incidence can be adjusted finely and optionally by an angle adjusting mechanism 38 provided successively on the laser source 34. Here, the laser beam 100 is projected on the thin film layer at the angle of incidence in the vicinity of a critical angle and scattered or diffracted light from the defect is detected by a TV camera 40 above a wafer 20 according to the pseudo surface wave generated in the layer. Further, a pulse motor 32 is driven according to the line width of the signal from the image input device 42, a sample table 30 is fed successively by a specific movement quantity to scan the entire area of the thin film layer 100, and scattered light generated by the entire-area scanning is stored in a memory 48. Then, a two-dimensional image is read out optionally and the crystal flaw in the thin film layer is inspected easily and speedily without any destruction.
JP62180312A 1987-07-20 1987-07-20 Method for detecting defects in thin film layer of crystal substrate Expired - Fee Related JPH0625740B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62180312A JPH0625740B2 (en) 1987-07-20 1987-07-20 Method for detecting defects in thin film layer of crystal substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62180312A JPH0625740B2 (en) 1987-07-20 1987-07-20 Method for detecting defects in thin film layer of crystal substrate

Publications (2)

Publication Number Publication Date
JPS6423144A true JPS6423144A (en) 1989-01-25
JPH0625740B2 JPH0625740B2 (en) 1994-04-06

Family

ID=16081011

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62180312A Expired - Fee Related JPH0625740B2 (en) 1987-07-20 1987-07-20 Method for detecting defects in thin film layer of crystal substrate

Country Status (1)

Country Link
JP (1) JPH0625740B2 (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5995218A (en) * 1997-01-17 1999-11-30 Nec Corporation Method for inspecting defects of wafer and inspection equipment thereof
KR19990088623A (en) * 1998-05-28 1999-12-27 가부시키가이샤 어드밴티스트 Surface state monitoring method and apparatus
JP2006214818A (en) * 2005-02-02 2006-08-17 Sharp Corp Flaw detecting method of optical component and flaw detector
JP2012063330A (en) * 2010-09-17 2012-03-29 Kansai Paint Co Ltd Method for non-contact and non-destructive evaluation of multilayer coating film, and device using the same
KR20150066447A (en) * 2013-12-06 2015-06-16 도쿄엘렉트론가부시키가이샤 Method for calculating distance, method for neutralizing electrostatic chuck, and processing apparatus

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4888982A (en) * 1972-02-23 1973-11-21

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4888982A (en) * 1972-02-23 1973-11-21

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5995218A (en) * 1997-01-17 1999-11-30 Nec Corporation Method for inspecting defects of wafer and inspection equipment thereof
KR19990088623A (en) * 1998-05-28 1999-12-27 가부시키가이샤 어드밴티스트 Surface state monitoring method and apparatus
JP2006214818A (en) * 2005-02-02 2006-08-17 Sharp Corp Flaw detecting method of optical component and flaw detector
JP2012063330A (en) * 2010-09-17 2012-03-29 Kansai Paint Co Ltd Method for non-contact and non-destructive evaluation of multilayer coating film, and device using the same
KR20150066447A (en) * 2013-12-06 2015-06-16 도쿄엘렉트론가부시키가이샤 Method for calculating distance, method for neutralizing electrostatic chuck, and processing apparatus

Also Published As

Publication number Publication date
JPH0625740B2 (en) 1994-04-06

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Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees