JPS6423144A - Method for detecting flaw in thin film layer of crystal substrate - Google Patents
Method for detecting flaw in thin film layer of crystal substrateInfo
- Publication number
- JPS6423144A JPS6423144A JP18031287A JP18031287A JPS6423144A JP S6423144 A JPS6423144 A JP S6423144A JP 18031287 A JP18031287 A JP 18031287A JP 18031287 A JP18031287 A JP 18031287A JP S6423144 A JPS6423144 A JP S6423144A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- film layer
- angle
- incidence
- laser beam
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
PURPOSE:To inspect a crystal flow in a thin film layer without any destruction by projecting a laser beam on the thin film layer at a specific angle of incidence and generating a pseudo surface wave in the thin film layer. CONSTITUTION:The laser beam 100 from a laser source 34 is incident on a prism 22 through an optical system 36, but the angle theta of incidence can be adjusted finely and optionally by an angle adjusting mechanism 38 provided successively on the laser source 34. Here, the laser beam 100 is projected on the thin film layer at the angle of incidence in the vicinity of a critical angle and scattered or diffracted light from the defect is detected by a TV camera 40 above a wafer 20 according to the pseudo surface wave generated in the layer. Further, a pulse motor 32 is driven according to the line width of the signal from the image input device 42, a sample table 30 is fed successively by a specific movement quantity to scan the entire area of the thin film layer 100, and scattered light generated by the entire-area scanning is stored in a memory 48. Then, a two-dimensional image is read out optionally and the crystal flaw in the thin film layer is inspected easily and speedily without any destruction.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62180312A JPH0625740B2 (en) | 1987-07-20 | 1987-07-20 | Method for detecting defects in thin film layer of crystal substrate |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62180312A JPH0625740B2 (en) | 1987-07-20 | 1987-07-20 | Method for detecting defects in thin film layer of crystal substrate |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6423144A true JPS6423144A (en) | 1989-01-25 |
JPH0625740B2 JPH0625740B2 (en) | 1994-04-06 |
Family
ID=16081011
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62180312A Expired - Fee Related JPH0625740B2 (en) | 1987-07-20 | 1987-07-20 | Method for detecting defects in thin film layer of crystal substrate |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0625740B2 (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5995218A (en) * | 1997-01-17 | 1999-11-30 | Nec Corporation | Method for inspecting defects of wafer and inspection equipment thereof |
KR19990088623A (en) * | 1998-05-28 | 1999-12-27 | 가부시키가이샤 어드밴티스트 | Surface state monitoring method and apparatus |
JP2006214818A (en) * | 2005-02-02 | 2006-08-17 | Sharp Corp | Flaw detecting method of optical component and flaw detector |
JP2012063330A (en) * | 2010-09-17 | 2012-03-29 | Kansai Paint Co Ltd | Method for non-contact and non-destructive evaluation of multilayer coating film, and device using the same |
KR20150066447A (en) * | 2013-12-06 | 2015-06-16 | 도쿄엘렉트론가부시키가이샤 | Method for calculating distance, method for neutralizing electrostatic chuck, and processing apparatus |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4888982A (en) * | 1972-02-23 | 1973-11-21 |
-
1987
- 1987-07-20 JP JP62180312A patent/JPH0625740B2/en not_active Expired - Fee Related
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4888982A (en) * | 1972-02-23 | 1973-11-21 |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5995218A (en) * | 1997-01-17 | 1999-11-30 | Nec Corporation | Method for inspecting defects of wafer and inspection equipment thereof |
KR19990088623A (en) * | 1998-05-28 | 1999-12-27 | 가부시키가이샤 어드밴티스트 | Surface state monitoring method and apparatus |
JP2006214818A (en) * | 2005-02-02 | 2006-08-17 | Sharp Corp | Flaw detecting method of optical component and flaw detector |
JP2012063330A (en) * | 2010-09-17 | 2012-03-29 | Kansai Paint Co Ltd | Method for non-contact and non-destructive evaluation of multilayer coating film, and device using the same |
KR20150066447A (en) * | 2013-12-06 | 2015-06-16 | 도쿄엘렉트론가부시키가이샤 | Method for calculating distance, method for neutralizing electrostatic chuck, and processing apparatus |
Also Published As
Publication number | Publication date |
---|---|
JPH0625740B2 (en) | 1994-04-06 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
LAPS | Cancellation because of no payment of annual fees |