JPH05273137A - Surface flaw inspecting device - Google Patents
Surface flaw inspecting deviceInfo
- Publication number
- JPH05273137A JPH05273137A JP4100596A JP10059692A JPH05273137A JP H05273137 A JPH05273137 A JP H05273137A JP 4100596 A JP4100596 A JP 4100596A JP 10059692 A JP10059692 A JP 10059692A JP H05273137 A JPH05273137 A JP H05273137A
- Authority
- JP
- Japan
- Prior art keywords
- detection
- optical system
- glass substrate
- scattered light
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Landscapes
- Length Measuring Devices By Optical Means (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、ガラス基板のような透
明平板材料の表面に存在する微粒子（塵）やキズ、ヒビ
等（以下、これらをまとめて異物という）による欠陥を
検出するための表面欠陥検査装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention is for detecting defects due to fine particles (dust), scratches, cracks and the like (hereinafter collectively referred to as foreign matter) existing on the surface of a transparent flat plate material such as a glass substrate. The present invention relates to a surface defect inspection device.
【０００２】[0002]
【従来の技術】周知のように、半導体製造工程では、シ
リコンウェハ表面の異物による欠陥を除去するため、極
めて厳密な研磨工程及び洗浄工程が要求される。この洗
浄工程において、ウェハ表面の微粒子を検出するために
従来から様々な表面欠陥検査装置が提案されている。2. Description of the Related Art As is well known, in semiconductor manufacturing processes, extremely strict polishing and cleaning processes are required to remove defects due to foreign substances on the surface of a silicon wafer. In this cleaning process, various surface defect inspection apparatuses have been conventionally proposed to detect fine particles on the wafer surface.
【０００３】図４はこの種の検査装置の第１の従来技術
を原理的に示したものである。図において、Ｓは検査す
るべきシリコンウェハの表面、Ｄは表面Ｓに存在する異
物、Ｌはレーザ光源（図示せず）から照射されるレーザ
検出光、１１，１２はレンズ、１３はホトトランジスタ
等からなるホトデテクタである。ここで、レーザ検出光
は例えば０．５ｍｍ径のビームに制御されている。その
測定原理としては、仮りに表面Ｓに異物Ｄが存在しなけ
れば、レーザ検出光Ｌは表面Ｓから所定の反射角にてＬ
1のように反射するだけであるが、異物Ｄが存在する場
合には異物Ｄによる散乱光Ｌ2が発生する。従って、例
えば検出位置の上方にレンズ１１，１２及びホトデテク
タ１３を配置しておけば上記散乱光Ｌ2を検出でき、換
言すれば異物Ｄを検出することができる。FIG. 4 shows in principle the first prior art of this type of inspection apparatus. In the figure, S is the surface of a silicon wafer to be inspected, D is a foreign substance existing on the surface S, L is laser detection light emitted from a laser light source (not shown), 11 and 12 are lenses, 13 is a phototransistor, etc. Is a photo detector. Here, the laser detection light is controlled to be a beam having a diameter of 0.5 mm, for example. The principle of measurement is that if there is no foreign matter D on the surface S, the laser detection light L is L at a predetermined reflection angle from the surface S.
Although only reflected like 1, the scattered light L 2 is generated by the foreign substance D when the foreign substance D is present. Therefore, for example, if the lenses 11 and 12 and the photodetector 13 are arranged above the detection position, the scattered light L 2 can be detected, in other words, the foreign substance D can be detected.
【０００４】図５も、同一の原理に基づく第２の従来技
術である。この例では、検査箇所の真上からレーザ検出
光Ｌを照射し、異物Ｄによる散乱光Ｌ2を斜め上方のレ
ンズ１１，１２及びホトデテクタ１３により検出するも
のである。なお、図４、図５に示した検査装置により検
出可能な異物Ｄの直径は、製品の歩留まりを考慮して
０．１μｍ、０．３μｍ、０．５μｍ等となっている。
また、レーザ光源やレンズ１１，１２、ホトデテクタ１
３等からなる検出用光学系は表面Ｓ上を一定の速度でス
キャン可能であり、これによって表面Ｓの全域につき欠
陥を検査できるように構成されている。FIG. 5 is also a second prior art based on the same principle. In this example, the laser detection light L is irradiated from directly above the inspection location, and the scattered light L 2 due to the foreign matter D is detected by the lenses 11 and 12 and the photodetector 13 obliquely above. The diameter of the foreign matter D that can be detected by the inspection device shown in FIGS. 4 and 5 is 0.1 μm, 0.3 μm, 0.5 μm, etc. in consideration of the product yield.
Further, the laser light source, the lenses 11 and 12, the photo detector 1
The detection optical system composed of 3 and the like is capable of scanning the surface S at a constant speed so that the entire area of the surface S can be inspected for defects.
【０００５】[0005]
【発明が解決しようとする課題】一方、近年ではパネル
型ディスプレイの製造技術が飛躍的に進歩しつつある。
周知のように液晶パネルやＥＬ（エレクトロルミネセン
ス）パネル、ＰＤ（プラズマディスプレイ）パネルのご
とくガラス基板上に電極を形成する構造のものにおいて
は、前述の半導体ウェハと同様にガラス基板表面に欠陥
がないことが要請される。ここで、図４、図５に示した
検査装置をウェハの検査に用いる場合には、ウェハが不
透明であるためその表面Ｓに照射したレーザ検出光Ｌが
ウェハ内部を透過することはない。しかるに、これらの
検査装置をガラス基板表面の欠陥検査に転用した場合、
レーザ検出光Ｌが透明なガラス基板内を透過し、その裏
面に付着している種々の異物からの散乱光まで表面側の
ホトデテクタ１３により検出してしまう場合がある。On the other hand, in recent years, the manufacturing technology of panel-type displays has been dramatically improved.
As is well known, in a structure in which electrodes are formed on a glass substrate such as a liquid crystal panel, an EL (electroluminescence) panel, and a PD (plasma display) panel, defects are formed on the surface of the glass substrate like the above-mentioned semiconductor wafer. Not required. Here, when the inspection apparatus shown in FIGS. 4 and 5 is used for inspecting a wafer, the laser detection light L applied to the surface S of the wafer does not pass through the inside of the wafer because the wafer is opaque. However, when these inspection devices are diverted to the defect inspection of the glass substrate surface,
The laser detection light L may pass through the inside of the transparent glass substrate, and scattered light from various foreign substances attached to the back surface thereof may be detected by the photodetector 13 on the front surface side.
【０００６】この不都合はガラス基板が薄いほど生じ易
く、液晶パネルのようにガラス基板が０．７ｍｍほどの
薄さである場合には、ホトデテクタによって検出してい
る散乱光がガラス基板表面の異物によるものなのか、あ
るいは裏面の異物によるものなのか判別できず、正確な
検査は不可能であった。このため、例えば４００ｍｍ×
４００ｍｍ程度の大きさのガラス基板に対しては有効な
表面欠陥検査手段がなく、未だに目視による検査に頼ら
ざるを得ない現状である。本発明は上記問題点を解決す
るためになされたもので、その目的とするところは、ガ
ラス基板等の透明平板材料の表面に存在する異物による
欠陥のみを高精度で検出することができる表面欠陥検査
装置を提供することにある。This problem is more likely to occur as the glass substrate is thinner, and when the glass substrate is as thin as 0.7 mm as in a liquid crystal panel, scattered light detected by the photodetector is caused by foreign matter on the surface of the glass substrate. Since it was not possible to determine whether it was due to foreign matter on the back or due to foreign matter on the back side, accurate inspection was impossible. Therefore, for example, 400 mm ×
There is no effective surface defect inspection means for a glass substrate having a size of about 400 mm, and it is the current situation that it is still necessary to rely on visual inspection. The present invention has been made to solve the above problems, and an object thereof is a surface defect capable of highly accurately detecting only a defect caused by a foreign substance existing on the surface of a transparent flat plate material such as a glass substrate. To provide an inspection device.
【０００７】[0007]
【課題を解決するための手段】上記目的を達成するた
め、本発明は、透明平板材料の表面に検出光を照射し、
前記表面に存在する異物による散乱光を検出用光学系に
より検出して前記異物を欠陥として検出する表面欠陥検
査装置において、前記表面上で検出光が照射される検出
位置よりも前方であってこの検出位置に異物が存在した
場合にその散乱光を検出可能な位置であり、かつ、表面
に対し前記透明平板材料の全反射の臨界角近傍以内の範
囲に検出用光学系を配置するものである。To achieve the above object, the present invention irradiates the surface of a transparent flat plate material with detection light,
In a surface defect inspection apparatus that detects scattered light due to foreign matter existing on the surface by a detection optical system to detect the foreign matter as a defect, in front of a detection position at which detection light is irradiated on the surface, It is a position where the scattered light can be detected when a foreign substance is present at the detection position, and the detection optical system is arranged within the vicinity of the critical angle of total reflection of the transparent flat plate material with respect to the surface. ..
【０００８】[0008]
【作用】本発明によれば、検出用光学系を上述したよう
な特定の位置に配置するため、透明平板材料の裏面に存
在する異物からの散乱光が検出用光学系に入射すること
はない。従って、検出用光学系により検出されるのは、
ほぼ表面の異物による散乱光のみとなる。According to the present invention, since the detection optical system is arranged at the specific position as described above, scattered light from foreign matter existing on the back surface of the transparent flat plate material does not enter the detection optical system. .. Therefore, what is detected by the detection optical system is
Almost only scattered light due to foreign matter on the surface is obtained.
【０００９】[0009]
【実施例】以下、図に沿って本発明の一実施例を説明す
る。まず、図２は本発明の原理を示すものである。Ｇは
透明平板材料としてのガラス基板であり、このガラス基
板Ｇの表面Ｓ上の位置Ｐ1に図示されていないレーザ光
源からレーザ検出光Ｌが入射角θ1で入射したとする。
なお、Ｌ1は位置Ｐ1からの反射光である。いま、位置Ｐ
1に異物が存在したとすると（以下、便宜上、異物につ
いてもその位置と同符号を用いる）、前述の図４と同様
の原理により、検出用光学系を適宜な位置に配置するこ
とによって異物Ｐ1による散乱光を検出することができ
るため、異物Ｐ1の検出が可能である。An embodiment of the present invention will be described below with reference to the drawings. First, FIG. 2 shows the principle of the present invention. G is a glass substrate as a transparent flat plate material, and it is assumed that laser detection light L is incident on the surface P of the glass substrate G at a position P 1 from a laser light source (not shown) at an incident angle θ 1 .
Note that L 1 is the reflected light from the position P 1 . Position P now
If there is a foreign substance in 1 (for convenience, the same reference numeral is used for the foreign substance hereinafter), the foreign substance P is arranged at an appropriate position by arranging the detection optical system at an appropriate position according to the same principle as in FIG. Since the scattered light from 1 can be detected, the foreign matter P 1 can be detected.
【００１０】一方、レーザ検出光Ｌが屈折角θ2でガラ
ス基板Ｇ内を透過したとし、そのとき、レーザ検出光Ｌ
が通過する裏面Ｓ´の位置Ｐ2にも異物があったとする
と、その異物Ｐ2による散乱光がガラス基板Ｇ内を介し
て表面Ｓの光学系側に透過する。従って、検出用光学系
の位置によっては、この裏面Ｓ´の異物Ｐ2による散乱
光も検出してしまう恐れがある。そこで本発明では、裏
面Ｓ´の異物Ｐ2による散乱光が全反射する臨界角θｃ
を考慮して検出用光学系を特定の位置に配置することと
した。On the other hand, it is assumed that the laser detection light L is transmitted through the glass substrate G at the refraction angle θ 2 , and at that time, the laser detection light L
If there is a foreign substance also at the position P 2 on the back surface S ′ through which the foreign substance passes, the scattered light due to the foreign substance P 2 passes through the glass substrate G to the optical system side of the front face S. Therefore, depending on the position of the detection optical system, scattered light due to the foreign matter P 2 on the back surface S ′ may also be detected. Therefore, in the present invention, the critical angle θc at which the scattered light due to the foreign matter P 2 on the back surface S ′ is totally reflected
Considering the above, the detection optical system is arranged at a specific position.
【００１１】図１は本発明の一実施例を示しており、図
２と同一の構成要素には同一符号を付してある。なお、
図１において、１４はレンズ１１，１２及びホトデテク
タ１３からなる検出用光学系を示す。ここで、レンズ１
１，１２としては非球面レンズが用いられている。ま
た、ホトデテクタ１３としては例えばシリコンホトダイ
オード等のソリッドステート受光素子や、ホトマル等で
あればよい。集光方式としては、レンズの他に楕円ミラ
ーや光ファイバ等を用いたものであってもよい。レーザ
光源としては、Ｈｅ−Ｎｅレーザ等のガスレーザ、半導
体レーザ及びＹＡＧレーザ等の複合素子レーザ等、その
種類を問わない。更に、上記光源や検出用光学系１４の
種類はあくまで例示的なものであり、本発明はこれら以
外の光源や検出用光学系を用いる場合も含むものであ
る。なお、ガラス基板Ｇの厚さは０．７ｍｍ、屈折率ｎ
＝１．５であり、その全反射の臨界角θｃは４１．８°
である。FIG. 1 shows an embodiment of the present invention, in which the same components as those in FIG. 2 are designated by the same reference numerals. In addition,
In FIG. 1, reference numeral 14 denotes a detection optical system including lenses 11, 12 and a photodetector 13. Where lens 1
Aspherical lenses 1 and 12 are used. The photodetector 13 may be, for example, a solid-state light receiving element such as a silicon photodiode or a photomultiplier. The condensing method may use an elliptical mirror, an optical fiber or the like in addition to the lens. The laser light source may be of any type such as a gas laser such as a He—Ne laser, a compound laser such as a semiconductor laser and a YAG laser, and the like. Further, the types of the light source and the detection optical system 14 described above are merely examples, and the present invention also includes the case of using a light source or a detection optical system other than these. The glass substrate G has a thickness of 0.7 mm and a refractive index n.
= 1.5, and the critical angle θc of total reflection is 41.8 °.
Is.
【００１２】本実施例では、前述の原理に基づき、ガラ
ス基板Ｇの表面Ｓ上でレーザ検出光Ｌが照射される検出
位置Ｐよりも前方であってこの検出位置Ｐに異物Ｄが存
在した場合にその散乱光を検出可能な位置であり、か
つ、表面Ｓに対しガラス基板Ｇの全反射の臨界角θｃ近
傍以内の範囲に検出用光学系１４を配置するようにした
ものである。In the present embodiment, based on the above-mentioned principle, when the foreign matter D exists at the detection position P in front of the detection position P where the laser detection light L is irradiated on the surface S of the glass substrate G. Further, the detection optical system 14 is arranged at a position where the scattered light can be detected, and within the vicinity of the critical angle θc of the total reflection of the glass substrate G with respect to the surface S.
【００１３】このような範囲に検出用光学系１４を配置
することにより、ガラス基板Ｇの裏面Ｓ´の異物による
散乱光であってガラス基板Ｇを表面Ｓ方向に透過したも
ののうち、臨界角θｃ以下の角度で表面Ｓに達したもの
は表面Ｓの外部に漏れ出すが、臨界角θｃ近傍以内の範
囲にある検出用光学系１４には入射しない。また、臨界
角θｃ以上の角度で表面Ｓに達したものは、図２にＬ3
で示すようにガラス基板Ｇ内で全反射を繰り返しながら
その端面方向に進んでいき、やはり検出用光学系１４に
は入射しないことになる。By arranging the detection optical system 14 in such a range, the critical angle θc of the scattered light due to the foreign matter on the back surface S ′ of the glass substrate G which is transmitted through the glass substrate G in the front surface S direction. Those that reach the surface S at the following angles leak to the outside of the surface S, but do not enter the detection optical system 14 in the range within the vicinity of the critical angle θc. Moreover, to have reached the surface S at an angle greater than the critical angle θc is, L 3 in FIG. 2
As shown in FIG. 3, the total reflection is repeated in the glass substrate G, and the glass substrate G advances toward the end face thereof, and again does not enter the detection optical system 14.
【００１４】従って、検出用光学系１４が裏面Ｓ´の異
物を誤検出する恐れは極めて小さくなり、表面Ｓに存在
する異物Ｄのみを検出可能となる。なお、検出用光学系
１４による検出信号（パルス）の個数は異物の個数を示
し、振幅は異物の大きさ（粒径）を示す。検出用光学系
１４の出力信号はマイコンによって処理され、必要に応
じてプリンタやディスプレイにより異物の個数や大きさ
が印字ないし表示される。Therefore, the possibility that the detection optical system 14 erroneously detects the foreign matter on the back surface S'is extremely small, and only the foreign matter D existing on the front surface S can be detected. The number of detection signals (pulses) by the detection optical system 14 indicates the number of foreign matters, and the amplitude indicates the size (particle diameter) of the foreign matters. The output signal of the detection optical system 14 is processed by a microcomputer, and the number and size of foreign matters are printed or displayed by a printer or a display as needed.
【００１５】本実施例において、レーザ光源と検出用光
学系１４との位置関係は一定であるため、これらを同一
フレームに固定して一体的に移動させ、ガラス基板Ｇの
表面Ｓの全域をスキャンするようにすればよい。ここ
で、本実施例が適用されるガラス基板Ｇの大きさは例え
ば４００ｍｍ四方から１００ｍｍ四方であり、スキャン
速度としては８０ｍｍ／秒程度に設定するとよい。ま
た、場合によってはレーザ光源及び検出用光学系１４を
固定しておき、ガラス基板Ｇを水平方向に移動させても
よい。In this embodiment, since the positional relationship between the laser light source and the detection optical system 14 is fixed, they are fixed to the same frame and moved integrally, and the entire surface S of the glass substrate G is scanned. You can do it. Here, the size of the glass substrate G to which this embodiment is applied is, for example, 400 mm square to 100 mm square, and the scan speed may be set to about 80 mm / sec. Further, in some cases, the laser light source and the detection optical system 14 may be fixed, and the glass substrate G may be moved in the horizontal direction.
【００１６】図３は、本実施例の概略的な構造の一例を
示すもので、図において１５はレーザ光源、１６は検出
用光学系１４及びレーザ光源１５の駆動部、１７はハウ
ジング、１８は開閉可能なメクラ板である。この装置全
体はクリーンルームのクリーンブース内に設置されるも
のであるが、図示するように、ガラス基板Ｇの検査する
べき表面Ｓを下方に向けてセットすることにより、浮遊
ダストや駆動部１６等により発生する塵が表面Ｓに付着
するのを防止することができる。また、ガラス基板Ｇ等
にはセッティング時にたわみが生じるため、図示しない
が、基板Ｇのコーナー部を真空吸着する等の手段により
基板Ｇにテンションを加えれば、上記たわみを除去する
ことが可能であり、測定精度を向上させることができ
る。FIG. 3 shows an example of a schematic structure of this embodiment. In the figure, reference numeral 15 is a laser light source, 16 is a detection optical system 14 and a driving portion of the laser light source 15, 17 is a housing, and 18 is a housing. It is a blind plate that can be opened and closed. The entire apparatus is installed in a clean booth in a clean room. However, as shown in the drawing, the surface S to be inspected of the glass substrate G is set downward so that the floating dust and the driving unit 16 cause It is possible to prevent the generated dust from adhering to the surface S. Further, since bending occurs in the glass substrate G and the like during setting, it is possible to remove the above-mentioned bending by applying tension to the substrate G by means such as vacuum suction of a corner portion of the substrate G, although not shown. The measurement accuracy can be improved.
【００１７】更に、本実施例ではレーザ検出光Ｌのビー
ム径を例えば１０ｍｍ，１．２ｍｍ，０．５ｍｍという
ように選択することができ、各ビーム径につき直径が
１．０μｍ，０．５μｍ，０．３μｍの異物を検出する
ことができる。このようにビーム径が小さいほど微細な
異物の検出が可能となるが、その反面、表面Ｓの全域を
スキャンするのに要する時間が長くなるため、これら両
者の兼ね合いでビーム径等を設定することが望ましい。Further, in the present embodiment, the beam diameter of the laser detection light L can be selected to be, for example, 10 mm, 1.2 mm, 0.5 mm, and the diameter is 1.0 μm, 0.5 μm, for each beam diameter. A foreign matter of 0.3 μm can be detected. As described above, the smaller the beam diameter, the finer the foreign matter can be detected, but on the other hand, the time required to scan the entire surface S becomes longer. Therefore, the beam diameter and the like should be set in consideration of both of them. Is desirable.
【００１８】[0018]
【発明の効果】以上のように本発明によれば、検出用光
学系を所定の範囲内に配置して透明平板材料の裏面に存
在する異物からの散乱光を誤検出しないようにしたた
め、ガラス基板等の表面に存在する微粒子、キズ、ヒビ
等の個数や大きさを高精度で検出することができる。従
って、通常は２０〜３０％といわれるこの種のガラス基
板の歩留まりを大幅に向上させることが可能であり、液
晶パネル等のコスト低減にも寄与することができる。ま
た、従来装置に新たに付加する部材も特になく、極めて
低コストで提供できる等の効果がある。なお、本発明は
ガラス基板ばかりでなく、プラスチック基板等の透明材
料のほか、薄膜を形成したシリコンウェハ等に対しても
適用可能である。As described above, according to the present invention, the detection optical system is arranged within a predetermined range so as to prevent false detection of scattered light from foreign matter present on the back surface of the transparent flat plate material. The number and size of fine particles, scratches, and cracks existing on the surface of a substrate or the like can be detected with high accuracy. Therefore, the yield of this type of glass substrate, which is usually 20 to 30%, can be greatly improved, and the cost of the liquid crystal panel or the like can be reduced. Further, there is no particular member newly added to the conventional device, and there is an effect that it can be provided at an extremely low cost. The present invention can be applied not only to a glass substrate but also to a transparent material such as a plastic substrate, and also to a silicon wafer having a thin film formed thereon.
【図１】本発明の一実施例を示す構成図である。FIG. 1 is a configuration diagram showing an embodiment of the present invention.
【図２】本発明の原理を示す説明図である。FIG. 2 is an explanatory diagram showing the principle of the present invention.
【図３】実施例の概略的な構造の一例を示す説明図であ
る。FIG. 3 is an explanatory diagram showing an example of a schematic structure of an example.
【図４】第１の従来技術を示す原理図である。FIG. 4 is a principle diagram showing a first conventional technique.
【図５】第２の従来技術を示す原理図である。FIG. 5 is a principle diagram showing a second conventional technique.
１１，１２ レンズ １３ ホトデテクタ １４ 検出用光学系 １５ レーザ光源 １６ 駆動部 １７ ハウジング １８ メクラ板 Ｇ ガラス基板 Ｓ 表面 Ｓ′ 裏面 Ｌ レーザ検出光 Ｌ1 反射光 Ｌ2 散乱光 Ｄ 異物 Ｐ 検出位置 θｃ 臨界角11, 12 lens 13 photodetector 14 detection optical system 15 laser light source 16 driving part 17 housing 18 blind plate G glass substrate S front surface S'rear surface L laser detection light L 1 reflected light L 2 scattered light D foreign matter P detection position θc critical angle
Claims (1)
前記表面に存在する異物による散乱光を検出用光学系に
より検出して前記異物を欠陥として検出する表面欠陥検
査装置において、 前記表面上で検出光が照射される検出位置よりも前方で
あってこの検出位置に異物が存在した場合にその散乱光
を検出可能な位置であり、かつ、表面に対し前記透明平
板材料の全反射の臨界角近傍以内の範囲に検出用光学系
を配置することを特徴とする表面欠陥検査装置。1. The surface of a transparent flat plate material is irradiated with detection light,
In a surface defect inspection apparatus that detects scattered light due to foreign matter existing on the surface by a detection optical system to detect the foreign matter as a defect, in front of a detection position at which detection light is irradiated on the surface, It is a position where scattered light can be detected when a foreign substance is present at the detection position, and the detection optical system is arranged in a range within the vicinity of the critical angle of total reflection of the transparent flat plate material with respect to the surface. And surface defect inspection equipment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4100596A JPH05273137A (en) | 1992-03-26 | 1992-03-26 | Surface flaw inspecting device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4100596A JPH05273137A (en) | 1992-03-26 | 1992-03-26 | Surface flaw inspecting device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH05273137A true JPH05273137A (en) | 1993-10-22 |
Family
ID=14278253
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4100596A Withdrawn JPH05273137A (en) | 1992-03-26 | 1992-03-26 | Surface flaw inspecting device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH05273137A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20020040582A (en) * | 2000-11-22 | 2002-05-30 | 구사마 사부로 | Method of evaluating liquid crystal panel and evaluating device |
| JP2011076669A (en) * | 2009-09-30 | 2011-04-14 | Hitachi High-Technologies Corp | Method and device for inspecting defects on both surfaces of magnetic disk |
| JP2011096305A (en) * | 2009-10-28 | 2011-05-12 | Hitachi High-Technologies Corp | Apparatus and method for inspecting surface defect on both sides of optical magnetic disk |
| JP2011137721A (en) * | 2009-12-28 | 2011-07-14 | Hitachi High-Technologies Corp | Optical checking for defect in magnetic disk, and apparatus of the same |
| KR20110097182A (en) | 2010-02-25 | 2011-08-31 | 가부시끼가이샤 야마나시 기쥬쯔 고오보오 | Alien substance inspection apparatus and inspection method |
| CN111007016A (en) * | 2019-12-09 | 2020-04-14 | 暨南大学 | Device for detecting tiny particle impurities on surface of transparent material and using method |
-
1992
- 1992-03-26 JP JP4100596A patent/JPH05273137A/en not_active Withdrawn
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20020040582A (en) * | 2000-11-22 | 2002-05-30 | 구사마 사부로 | Method of evaluating liquid crystal panel and evaluating device |
| JP2011076669A (en) * | 2009-09-30 | 2011-04-14 | Hitachi High-Technologies Corp | Method and device for inspecting defects on both surfaces of magnetic disk |
| JP2011096305A (en) * | 2009-10-28 | 2011-05-12 | Hitachi High-Technologies Corp | Apparatus and method for inspecting surface defect on both sides of optical magnetic disk |
| JP2011137721A (en) * | 2009-12-28 | 2011-07-14 | Hitachi High-Technologies Corp | Optical checking for defect in magnetic disk, and apparatus of the same |
| KR20110097182A (en) | 2010-02-25 | 2011-08-31 | 가부시끼가이샤 야마나시 기쥬쯔 고오보오 | Alien substance inspection apparatus and inspection method |
| CN111007016A (en) * | 2019-12-09 | 2020-04-14 | 暨南大学 | Device for detecting tiny particle impurities on surface of transparent material and using method |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A300 | Withdrawal of application because of no request for examination |
Free format text: JAPANESE INTERMEDIATE CODE: A300 Effective date: 19990608 |