JPS6413119U - - Google Patents
Info
- Publication number
- JPS6413119U JPS6413119U JP10788587U JP10788587U JPS6413119U JP S6413119 U JPS6413119 U JP S6413119U JP 10788587 U JP10788587 U JP 10788587U JP 10788587 U JP10788587 U JP 10788587U JP S6413119 U JPS6413119 U JP S6413119U
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- electrodes
- plasma cvd
- substrate
- plasma
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims 2
- 239000000758 substrate Substances 0.000 claims 2
- 230000002093 peripheral effect Effects 0.000 claims 1
- 239000002994 raw material Substances 0.000 claims 1
Description
第１図は本考案装置の模式的縦断面図、第２図
は本考案装置に用いる電極の他の例を示す模式的
断面図、第３図は従来装置の模式的縦断面図であ
る。
１……チヤンバ、２，３……電極、４……アー
スシールド、５……高周波電源、１３……電極。
FIG. 1 is a schematic vertical cross-sectional view of the device of the present invention, FIG. 2 is a schematic cross-sectional view showing another example of an electrode used in the device of the present invention, and FIG. 3 is a schematic vertical cross-sectional view of a conventional device. 1... Chamber, 2, 3... Electrode, 4... Earth shield, 5... High frequency power supply, 13... Electrode.
Claims (1)
に放電を行わせて原料ガスをプラズマ化し、電極
の一方に固定した基板に成膜を施すようにしたプ
ラズマＣＶＤ装置において、両電極間の離隔寸法
が電極の中心部から周縁部側に向かうに従つて狭
くなるよう基板を位置させる電極と対向する方の
電極を成形したことを特徴とするプラズマＣＶＤ
装置。 In a plasma CVD apparatus in which a discharge is caused between a pair of electrodes disposed facing each other in a chamber to turn raw material gas into plasma and a film is formed on a substrate fixed to one of the electrodes, the distance between the two electrodes is Plasma CVD characterized in that the electrode facing the electrode on which the substrate is positioned is molded so that its dimensions become narrower from the center of the electrode toward the peripheral edge.
Device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10788587U JPS6413119U (en) | 1987-07-14 | 1987-07-14 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10788587U JPS6413119U (en) | 1987-07-14 | 1987-07-14 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6413119U true JPS6413119U (en) | 1989-01-24 |
Family
ID=31342704
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10788587U Pending JPS6413119U (en) | 1987-07-14 | 1987-07-14 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6413119U (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09312268A (en) * | 1996-05-23 | 1997-12-02 | Sharp Corp | Plasma enhanced chemical vapor deposition system and plasma etching device |
| KR100687530B1 (en) * | 1999-03-18 | 2007-02-27 | 에이에스엠 저펜 가부시기가이샤 | Plasma ??? Film-Forming Device |
| WO2008078508A1 (en) * | 2006-12-26 | 2008-07-03 | Kyocera Corporation | Plasma generating body and reaction device |
| JP2013044017A (en) * | 2011-08-24 | 2013-03-04 | Fujifilm Corp | Film deposition apparatus |
| KR101339003B1 (en) * | 2013-05-22 | 2013-12-10 | 플라텍(주) | Anode wiring film plating equipment for semiconductor wafer |
-
1987
- 1987-07-14 JP JP10788587U patent/JPS6413119U/ja active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09312268A (en) * | 1996-05-23 | 1997-12-02 | Sharp Corp | Plasma enhanced chemical vapor deposition system and plasma etching device |
| KR100687530B1 (en) * | 1999-03-18 | 2007-02-27 | 에이에스엠 저펜 가부시기가이샤 | Plasma ??? Film-Forming Device |
| WO2008078508A1 (en) * | 2006-12-26 | 2008-07-03 | Kyocera Corporation | Plasma generating body and reaction device |
| JP5053292B2 (en) * | 2006-12-26 | 2012-10-17 | 京セラ株式会社 | Plasma generator and reactor |
| JP2013044017A (en) * | 2011-08-24 | 2013-03-04 | Fujifilm Corp | Film deposition apparatus |
| KR101339003B1 (en) * | 2013-05-22 | 2013-12-10 | 플라텍(주) | Anode wiring film plating equipment for semiconductor wafer |