JPH0160528U - - Google Patents

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第１図は本考案の一実施例の断面図、第２図は
従来の装置の断面図、第３図は本考案の一実施例
の要部斜視図である。 １：反応槽、２：基板支持体、２０：底板、４
：高周波電極、５：高周波電源、８：プラズマ、
９：基板。 FIG. 1 is a cross-sectional view of an embodiment of the present invention, FIG. 2 is a cross-sectional view of a conventional device, and FIG. 3 is a perspective view of essential parts of an embodiment of the present invention. 1: Reaction tank, 2: Substrate support, 20: Bottom plate, 4
: High frequency electrode, 5: High frequency power supply, 8: Plasma,
9: Substrate.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 真空排気可能な反応槽内部のそれぞれほぼ鉛直
面内にある平行対向電極間にガスを導入し、電極
間の放電によりガスを反応させて一方の電極を兼
ねる支持体の２面に支持された基板面上に成膜す
るものにおいて、反応槽が接地され、該反応槽に
絶縁して電源に接続された一方の電極が反応槽上
部よりつり下げられ、該電極と同間隔の対向面に
基板を支持する支持体は、水平方向の長さと同一
長さで反応槽下部と面接触する導電性底板によつ
て連結されたことを特徴とする薄膜形成装置。 A substrate supported on two sides of a support that doubles as one electrode by introducing gas between parallel opposing electrodes, each of which is located in a vertical plane inside a reaction tank that can be evacuated, and causing the gas to react by electric discharge between the electrodes. In cases where a film is formed on a surface, the reaction tank is grounded, one electrode is insulated from the reaction tank and connected to a power source, and is suspended from the top of the reaction tank, and the substrate is placed on the opposite surface at the same distance as the electrode. A thin film forming apparatus characterized in that the supporting body is connected by a conductive bottom plate having the same length as the horizontal length and in surface contact with the lower part of the reaction tank.