JPS62152435U - - Google Patents

Info

Publication number
JPS62152435U
JPS62152435U JP3905486U JP3905486U JPS62152435U JP S62152435 U JPS62152435 U JP S62152435U JP 3905486 U JP3905486 U JP 3905486U JP 3905486 U JP3905486 U JP 3905486U JP S62152435 U JPS62152435 U JP S62152435U
Authority
JP
Japan
Prior art keywords
substrate
electrodes
dry etching
etching
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3905486U
Other languages
Japanese (ja)
Other versions
JPH0451473Y2 (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1986039054U priority Critical patent/JPH0451473Y2/ja
Publication of JPS62152435U publication Critical patent/JPS62152435U/ja
Application granted granted Critical
Publication of JPH0451473Y2 publication Critical patent/JPH0451473Y2/ja
Expired legal-status Critical Current

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  • Drying Of Semiconductors (AREA)

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は、本考案の一実施例であるドライエツ
チング装置を示す構成図、第2図は、本考案の一
実施例のエツチング速度分布を示すグラフである
。 1……RF電源、2……基板、3……電極、4
……円板、5……電極。
FIG. 1 is a block diagram showing a dry etching apparatus according to an embodiment of the present invention, and FIG. 2 is a graph showing an etching rate distribution according to an embodiment of the present invention. 1...RF power supply, 2...Substrate, 3...Electrode, 4
...disk, 5...electrode.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 互いに対向して配置された電極間に電圧を印加
してプラズマを発生させ、前記電極の一方に基板
を配置してエツチングを行うドライエツチング装
置において、前記基板を配置した電極の前記基板
周囲を前記基板と同じインビーダンスの材料で覆
つたことを特徴とするドライエツチング装置。
In a dry etching apparatus that generates plasma by applying a voltage between electrodes disposed facing each other and performs etching by disposing a substrate on one of the electrodes, the periphery of the substrate of the electrode on which the substrate is disposed is etched by the etching process. A dry etching device characterized by being covered with the same impedance material as the substrate.
JP1986039054U 1986-03-19 1986-03-19 Expired JPH0451473Y2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1986039054U JPH0451473Y2 (en) 1986-03-19 1986-03-19

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1986039054U JPH0451473Y2 (en) 1986-03-19 1986-03-19

Publications (2)

Publication Number Publication Date
JPS62152435U true JPS62152435U (en) 1987-09-28
JPH0451473Y2 JPH0451473Y2 (en) 1992-12-03

Family

ID=30851870

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1986039054U Expired JPH0451473Y2 (en) 1986-03-19 1986-03-19

Country Status (1)

Country Link
JP (1) JPH0451473Y2 (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58125831A (en) * 1982-01-22 1983-07-27 Seiko Epson Corp Dry etching device
JPS58168232A (en) * 1982-03-30 1983-10-04 Fujitsu Ltd Parallel flat plate type dry etching appratus

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58125831A (en) * 1982-01-22 1983-07-27 Seiko Epson Corp Dry etching device
JPS58168232A (en) * 1982-03-30 1983-10-04 Fujitsu Ltd Parallel flat plate type dry etching appratus

Also Published As

Publication number Publication date
JPH0451473Y2 (en) 1992-12-03

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