JPH0469465U - - Google Patents

Info

Publication number
JPH0469465U
JPH0469465U JP11073390U JP11073390U JPH0469465U JP H0469465 U JPH0469465 U JP H0469465U JP 11073390 U JP11073390 U JP 11073390U JP 11073390 U JP11073390 U JP 11073390U JP H0469465 U JPH0469465 U JP H0469465U
Authority
JP
Japan
Prior art keywords
plasma cvd
electrode
electrode structure
metal plate
glow discharge
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11073390U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP11073390U priority Critical patent/JPH0469465U/ja
Publication of JPH0469465U publication Critical patent/JPH0469465U/ja
Pending legal-status Critical Current

Links

Landscapes

  • Chemical Vapour Deposition (AREA)

Description

【図面の簡単な説明】[Brief explanation of drawings]

第１図は本考案の一実施例が適用されたプラズ
マＣＶＤ装置の電極構造の概略構成図、第２図は
他の実施例における金属絶縁板の斜視図、第３図
は前記電極構造が適用されるプラズマＣＶＤ装置
の概略構成図、第４、第５図及び第６図は従来例
の第１図に相当する図である。 ４……絶縁板、５……金属絶縁板、１１……電
極、１２……アースシールド。 Fig. 1 is a schematic configuration diagram of an electrode structure of a plasma CVD apparatus to which one embodiment of the present invention is applied, Fig. 2 is a perspective view of a metal insulating plate in another embodiment, and Fig. 3 is a diagram to which the above electrode structure is applied. The schematic configuration diagrams of the plasma CVD apparatus to be used, FIGS. 4, 5, and 6, correspond to FIG. 1 of the conventional example. 4...Insulating plate, 5...Metal insulating plate, 11...Electrode, 12...Earth shield.

Claims (1)

【実用新案登録請求の範囲】 (1) チヤンバ内に反応ガスを導入するとともに
グロー放電を生じさせて、基板に成膜を行うプラ
ズマＣＶＤ装置の電極構造であつて、 グロー放電用の電源が接続された電極と、 前記電極の周囲に配置され、アースに接続され
たアースシールドと、 前記電極とアースシールドとの間に所定の隙間
を有して配置されたフレキシブルな絶縁体と、 を備えたプラズマＣＶＤ装置の電極構造。 (2) 前記絶縁体は、フレキシブルな金属板と、
前記金属板の表面にコーテイングされた絶縁膜と
から構成されている、 請求項(1)に記載のプラズマＣＶＤ装置の電極
構造。[Scope of Claim for Utility Model Registration] (1) An electrode structure of a plasma CVD apparatus that deposits a film on a substrate by introducing a reactive gas into a chamber and generating a glow discharge, which is connected to a power source for the glow discharge. an earth shield arranged around the electrode and connected to earth; and a flexible insulator arranged with a predetermined gap between the electrode and the earth shield. Electrode structure of plasma CVD equipment. (2) the insulator is a flexible metal plate;
The electrode structure for a plasma CVD apparatus according to claim 1, comprising an insulating film coated on the surface of the metal plate.
JP11073390U 1990-10-22 1990-10-22 Pending JPH0469465U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11073390U JPH0469465U (en) 1990-10-22 1990-10-22

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11073390U JPH0469465U (en) 1990-10-22 1990-10-22

Publications (1)

Publication Number Publication Date
JPH0469465U true JPH0469465U (en) 1992-06-19

Family

ID=31858115

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11073390U Pending JPH0469465U (en) 1990-10-22 1990-10-22

Country Status (1)

Country Link
JP (1) JPH0469465U (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06333849A (en) * 1993-05-19 1994-12-02 Tokyo Electron Ltd Plasma processing device
JPH07122502A (en) * 1993-10-21 1995-05-12 Nec Corp Plasma machining device
JP2002093721A (en) * 2000-09-14 2002-03-29 Canon Inc Method and apparatus for forming deposition film
JP2007258379A (en) * 2006-03-22 2007-10-04 Tokyo Electron Ltd Plasma treatment apparatus
JP2013538284A (en) * 2010-07-02 2013-10-10 アプライド マテリアルズ インコーポレイテッド Deposition apparatus and method for reducing deposition asymmetry

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06333849A (en) * 1993-05-19 1994-12-02 Tokyo Electron Ltd Plasma processing device
JPH07122502A (en) * 1993-10-21 1995-05-12 Nec Corp Plasma machining device
JP2002093721A (en) * 2000-09-14 2002-03-29 Canon Inc Method and apparatus for forming deposition film
JP4557400B2 (en) * 2000-09-14 2010-10-06 キヤノン株式会社 Method for forming deposited film
JP2007258379A (en) * 2006-03-22 2007-10-04 Tokyo Electron Ltd Plasma treatment apparatus
JP2013538284A (en) * 2010-07-02 2013-10-10 アプライド マテリアルズ インコーポレイテッド Deposition apparatus and method for reducing deposition asymmetry

Similar Documents

Publication Publication Date Title
JPS6486471A (en) Spark plug
EP0364215A3 (en) Plasma etching apparatus
JPH0469465U (en)
JPH0392771U (en)
JPS5711806A (en) Ozonizer
JPS5647574A (en) Plasma etching apparatus
JPS52127770A (en) Spatter etching method
JPH0415832U (en)
JPS57132652A (en) Ionic source device
JPS5530827A (en) Plasmaetching device
WO2002009241A3 (en) Electrode for plasma processing system
JPH02108335U (en)
JPS6182958U (en)
JPS63187326U (en)
JPS6163832U (en)
JPS62110264U (en)
JPS59187135U (en) Semiconductor thin film forming equipment
JPS62132169U (en)
JPH0429659U (en)
JPH02113333U (en)
JPH01106564U (en)
JPS5343142A (en) Back electrode long distance discharging gap ignition plug
JPS52141568A (en) Oxidizing semiconductor
JPS6397333U (en)
JPH0229149U (en)