JPS6384005A - Perpendicularly magnetized film - Google Patents
Perpendicularly magnetized filmInfo
- Publication number
- JPS6384005A JPS6384005A JP22913086A JP22913086A JPS6384005A JP S6384005 A JPS6384005 A JP S6384005A JP 22913086 A JP22913086 A JP 22913086A JP 22913086 A JP22913086 A JP 22913086A JP S6384005 A JPS6384005 A JP S6384005A
- Authority
- JP
- Japan
- Prior art keywords
- target
- film
- substrate
- sputtering
- perpendicularly magnetized
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010408 film Substances 0.000 claims abstract description 26
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 238000004544 sputter deposition Methods 0.000 claims abstract description 14
- 239000000203 mixture Substances 0.000 claims abstract description 10
- 239000010409 thin film Substances 0.000 claims abstract description 7
- 229910052779 Neodymium Inorganic materials 0.000 claims abstract description 6
- 239000000956 alloy Substances 0.000 claims abstract description 6
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 6
- 229910052796 boron Inorganic materials 0.000 claims abstract description 6
- 229910052742 iron Inorganic materials 0.000 claims abstract description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 9
- 238000000151 deposition Methods 0.000 claims description 5
- 230000008021 deposition Effects 0.000 claims description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 4
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 claims description 4
- 239000000843 powder Substances 0.000 abstract description 4
- 230000001105 regulatory effect Effects 0.000 abstract 1
- 230000005415 magnetization Effects 0.000 description 13
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 230000005347 demagnetization Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
- Thin Magnetic Films (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
この発明は高密度記録に適した垂直磁気記録媒体に用い
る垂直磁化膜に関するものである。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a perpendicular magnetization film used in a perpendicular magnetic recording medium suitable for high-density recording.
（従来の技術）
従来、一般に垂直磁気記録を目的とした薄膜はＣｏ−Ｃ
ｒ系合金をスパッタリング法や真空蒸着法さらには化学
めっき法などの表面処理技術を用いることによって製造
されていた。(Prior art) Conventionally, thin films for perpendicular magnetic recording have generally been made of Co-C.
R-based alloys have been manufactured using surface treatment techniques such as sputtering, vacuum evaporation, and chemical plating.
（発明が解決しようとする問題点）
しかし、蒸発源であるクロムＣｒは人体に有害であるた
め好ましくなく、また、コバルトｃｏは高価である。(Problems to be Solved by the Invention) However, chromium Cr, which is an evaporation source, is undesirable because it is harmful to the human body, and cobalt co is expensive.
（発明の目的）
そこで、この発明の目的は安価で人体に無害な垂直磁化
膜を提供することにある。(Object of the Invention) Therefore, the object of the present invention is to provide a perpendicularly magnetized film that is inexpensive and harmless to the human body.
（問題点を解決するための手段）
このため、ネオジウムＮｄ、鉄Ｆｅ、はう素Ｂの元素か
らなる組成がＮｄｘＦｅｌｏｏ −１−２Ｂ：１で表わ
され、Ｘが１３〜２７．ｙが４〜１７の値からなる合金
薄膜を付着速度（μｍ／ｍｉｎ）と基板温度（℃）の条
件が（０，０５，４２０） 、 （０，０５゜４００
） 、 （１，０，１００）および（１，０、６００
）の４点を結ぶ直線で囲まれる範囲でスパッタリングに
より形成するようにしである。(Means for solving the problem) For this reason, a composition consisting of the elements neodymium Nd, iron Fe, and boron B is expressed as NdxFeloo -1-2B:1, and X is 13 to 27. An alloy thin film with a value of y of 4 to 17 was deposited under conditions of deposition rate (μm/min) and substrate temperature (°C) of (0,05,420) and (0,05°400).
) , (1,0,100) and (1,0,600
) is formed by sputtering in an area surrounded by a straight line connecting four points.
（作用）
このように、薄膜の組成範囲とスパッタリング条件とを
定めることによって、膜厚方向に微細結晶が成長し、磁
化容易軸が膜厚方向に揃うため。(Function) In this way, by determining the composition range of the thin film and the sputtering conditions, fine crystals grow in the film thickness direction, and the axis of easy magnetization is aligned in the film thickness direction.
垂直磁化膜を得ることができる。A perpendicularly magnetized film can be obtained.
（実施例）
第１図は本発明の垂直磁化膜を形成するためのマグネト
ロンスパッタリング装置の断面図である。(Example) FIG. 1 is a sectional view of a magnetron sputtering apparatus for forming a perpendicularly magnetized film of the present invention.
真空容器１の中にターゲット２を設け、これと対向させ
て４０ｍｍの間隔を置き基板３を基板取付台基板の温度
をヒータ電源９によってコントロールするようにしであ
る。ターゲット２と基板３の間にはスパッタリング初期
に飛散する粒子が基板に付着するのを防ぐためシャッタ
５を配設している。A target 2 is provided in a vacuum container 1, and a substrate 3 is placed facing the target 2 at a distance of 40 mm, and the temperature of the substrate mount substrate is controlled by a heater power source 9. A shutter 5 is disposed between the target 2 and the substrate 3 in order to prevent particles scattered during the initial stage of sputtering from adhering to the substrate.
ターゲット２にはターゲット電源７によって直流電圧ま
たは高周波電圧を印加できるようにしてあり、この電圧
を変えることにより基板への付着速度を変えることがで
きる。A DC voltage or a high frequency voltage can be applied to the target 2 by a target power source 7, and by changing this voltage, the speed of attachment to the substrate can be changed.
垂直磁化膜の作製はつぎの手順で行った。ターゲットは
薄膜中のネオジウムの原子比が１５９６゜はう素の原子
比が５％になるようにＮｄ粉末とＢ粉末およびＦｅ粉末
を混合し、真空中で焼結して得たターゲットをスパッタ
リング電極に取り付け。The perpendicularly magnetized film was manufactured using the following procedure. The target is a mixture of Nd powder, B powder, and Fe powder so that the atomic ratio of neodymium in the thin film is 1596° and the atomic ratio of boron is 5%, and the target is sintered in a vacuum and used as a sputtering electrode. Attach to.
−１基板を基板台に設置した後、真空容器内を排気系１
０により２ Ｘ １０−’ Ｔｏｒｒ以下に排気する。-1 After installing the board on the board stand, exhaust system 1 inside the vacuum container.
0 to evacuate to below 2 x 10-' Torr.
加
ヒータ電源９を調整しながら基板を３００℃に過熱した
後、アルゴンガス導入バルブ８を開いてアルゴンガスを
導入し、圧力が３ Ｘ １０−２Ｔｏｒｒになるように
調整した。シャッタ５を閉じたままターゲット電源７に
より負の直流電圧４００ｖを印加し。After heating the substrate to 300° C. while adjusting the heater power source 9, the argon gas introduction valve 8 was opened to introduce argon gas, and the pressure was adjusted to 3×10 −2 Torr. A negative DC voltage of 400 V was applied from the target power supply 7 while the shutter 5 was closed.
１５分間予備スパッタリングを行い、ターゲット表面の
酸化物を除去した。つぎに、シャッタを開いて６０分間
スパッタリングを行い、約５μｍの膜を形成した。この
後、真空容器１内を２×１Ｏ−６Ｔｏｒｒ以下に排気し
、基板温度が室温になるまで冷却し、取り出した基板の
磁気特性を測定したところ第２図に示す磁化曲線が得ら
れた。Preliminary sputtering was performed for 15 minutes to remove oxides on the target surface. Next, the shutter was opened and sputtering was performed for 60 minutes to form a film of about 5 μm. Thereafter, the inside of the vacuum chamber 1 was evacuated to 2.times.1 O@-6 Torr or less, the substrate was cooled to room temperature, and the magnetic properties of the taken out substrate were measured, and the magnetization curve shown in FIG. 2 was obtained.
この磁化曲線は垂直方向が磁化容易軸であることを示し
ている。ただし、磁化曲線２０は膜面に垂直に、２１は
面内番こ磁界をかけた場合の磁化曲線であり、２０では
反磁界補正を行っていない。This magnetization curve shows that the perpendicular direction is the axis of easy magnetization. However, the magnetization curve 20 is perpendicular to the film surface, the magnetization curve 21 is the magnetization curve when an in-plane magnetic field is applied, and the demagnetization curve 20 is not corrected by the demagnetizing field.
また、Ｘ線解析パターンを調べた結果Ｃ軸が膜面に垂直
に配向していることが確認された。Further, as a result of examining the X-ray analysis pattern, it was confirmed that the C-axis was oriented perpendicular to the film surface.
以下同じような手順により基板温度と付着速度を変えて
膜形成を行い、垂直磁化膜が得られるスパッタリング条
件を調べたところ第３図の結果が得られた。第３図の破
線で囲んだＡは垂直磁化膜が得られた条件である。付着
温度が大きくなる程、垂直磁化膜の得られる基板温度の
範囲が広くなる。Films were formed by changing the substrate temperature and deposition rate using the same procedure, and the sputtering conditions for obtaining a perpendicularly magnetized film were investigated, and the results shown in FIG. 3 were obtained. A, surrounded by a broken line in FIG. 3, is the condition under which a perpendicularly magnetized film was obtained. The higher the deposition temperature, the wider the range of substrate temperatures in which a perpendicularly magnetized film can be obtained.
範囲Ａ以外の条件、たとえば基板温度が低い場合は結晶
構造が非晶質となって満足な磁気特性が得られず、逆に
基板温度が高いと結晶粒が粗大化して垂直方向の配向性
が失われる。Ａの範囲内で形成した垂直磁化膜の飽和磁
化Ｂｓは６０００ガウス以上と太き（、保磁力Ｈａは約
６００エルステツトテあり、磁気記録媒体として実用上
十分な特性が得られた。Conditions other than range A, for example, when the substrate temperature is low, the crystal structure becomes amorphous and satisfactory magnetic properties cannot be obtained; conversely, when the substrate temperature is high, the crystal grains become coarser and the vertical orientation is reduced. Lost. The saturation magnetization Bs of the perpendicular magnetization film formed within the range of A was as large as 6,000 Gauss or more (and the coercive force Ha was about 600 Oerstes), and practically sufficient characteristics as a magnetic recording medium were obtained.
つぎにターゲットの組成を種々変えて合金薄膜の組成を
変え、範囲Ａのスパッタリング条件で調べたところ、第
１表に示す組成で垂直磁化膜となり前記磁気特性が得ら
れた。すなわち膜組成をＦξ（＋１
Ｎｄｘ狗（ロ）番ｘ−ｙ）Ｂｙで表わした場合、Ｘが１
３〜２７．ｙが３〜１７の範囲であった。Next, when the composition of the alloy thin film was varied by changing the composition of the target and examined under the sputtering conditions in range A, the perpendicularly magnetized film was obtained with the composition shown in Table 1, and the magnetic properties described above were obtained. In other words, when the film composition is expressed as Fξ(+1 Ndx dog (ro) number x−y) By, if X is 1
3-27. y was in the range of 3-17.
第１表
（発明の効果）
以上説明したように本発明によればネオジウムと鉄およ
びほう素を主成分とし、スパッタリング条件を定めるこ
とにより人体に無害な垂直磁化を安価で得ることができ
る。このため、高密度の磁気記録媒体への適用が可能な
垂直磁化膜器ｔゆ＃４ミー禦を提供できる。Table 1 (Effects of the Invention) As explained above, according to the present invention, perpendicular magnetization harmless to the human body can be obtained at low cost by using neodymium, iron, and boron as main components and determining sputtering conditions. Therefore, it is possible to provide a perpendicular magnetization film device which can be applied to high-density magnetic recording media.
第１図は本発明の垂直磁化膜を形成するためのマグネト
ロンスパッタリング装置の断面図、第２図は代表的な垂
直磁化膜の磁化曲線を示す図、第３図は垂直磁化膜が得
られるスパッタリング条件の範囲を示す図である。
２はターゲット、３は石英基板、５はヒータ第 １ 図
１、真空容器 ６．ヒータ
２、タープ・シト ７８ ターゲット電源３、基
板 ８．Ａ「ガス導入パルづ４、基板取付台
９．ヒータ電源
５、シャッタ １０．排気系
第２図
第３図
０ ０、＋ ０．２ ０．３ Ｇ、４ ０．５
Ｇ、６ ０．７ Ｇ、ＥＩ Ｏ，Ｑ １０ １１
付着速度（／ｌＩ／ｍｉｎ ）Fig. 1 is a cross-sectional view of a magnetron sputtering apparatus for forming a perpendicularly magnetized film of the present invention, Fig. 2 is a diagram showing a magnetization curve of a typical perpendicularly magnetized film, and Fig. 3 is a sputtering method for obtaining a perpendicularly magnetized film. It is a figure showing the range of conditions. 2 is a target, 3 is a quartz substrate, 5 is a heater 1 Figure 1, vacuum container 6. Heater 2, tarp/seat 78 Target power supply 3, board 8. A: Gas introduction pulse 4, board mount 9. Heater power supply 5, shutter 10. Exhaust system Fig. 2 Fig. 3 0 0, + 0.2 0.3 G, 4 0.5
G, 6 0.7 G, EI O, Q 10 11
Deposition rate (/lI/min)
Claims (1)
、その組成がＮｄ＿ｘＦｅ（１００＿−＿ｘ＿−＿ｙ）
Ｂ＿ｙで表わされ、ｘが１３〜２７、ｙが３〜１７の値
からなる合金薄膜を付着速度（μｍ／ｍｉｎ）と基板温
度（℃）の条件が（０．０５、４２０）、（０．０５、
４００）、（１．０、１００）および（１．０、６００
）の４点を結ぶ直線で囲まれる範囲でスパッタリングに
より形成したことを特徴とする垂直磁化膜。1 Consists of the elements neodymium Nd, iron Fe, and boron B, and its composition is Nd_xFe (100_-_x_-_y)
An alloy thin film represented by B_y, where x has a value of 13 to 27 and y has a value of 3 to 17, is deposited under conditions of deposition rate (μm/min) and substrate temperature (°C) of (0.05, 420) and (0 .05,
400), (1.0, 100) and (1.0, 600
) A perpendicularly magnetized film formed by sputtering in an area surrounded by straight lines connecting four points.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22913086A JPS6384005A (en) | 1986-09-26 | 1986-09-26 | Perpendicularly magnetized film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22913086A JPS6384005A (en) | 1986-09-26 | 1986-09-26 | Perpendicularly magnetized film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6384005A true JPS6384005A (en) | 1988-04-14 |
| JPH0565043B2 JPH0565043B2 (en) | 1993-09-16 |
Family
ID=16887221
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP22913086A Granted JPS6384005A (en) | 1986-09-26 | 1986-09-26 | Perpendicularly magnetized film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6384005A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4238400A1 (en) * | 1991-11-14 | 1993-05-19 | Victor Company Of Japan | Transverse magnetic recording material mfr. - uses sputtering process to form film of Neodymium-Iron-Boron on surface of non magnetic carrier. |
| JP2012207274A (en) * | 2011-03-30 | 2012-10-25 | Hitachi Metals Ltd | Sputtering target for permanent magnet thin film and method for producing the same |
| WO2014038022A1 (en) * | 2012-09-05 | 2014-03-13 | 株式会社日立製作所 | Nd-Fe-B THIN FILM MAGNET, AND METHOD FOR PRODUCING SAME |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60128606A (en) * | 1983-12-15 | 1985-07-09 | Seiko Instr & Electronics Ltd | Photo-magnetic recording medium |
-
1986
- 1986-09-26 JP JP22913086A patent/JPS6384005A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60128606A (en) * | 1983-12-15 | 1985-07-09 | Seiko Instr & Electronics Ltd | Photo-magnetic recording medium |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4238400A1 (en) * | 1991-11-14 | 1993-05-19 | Victor Company Of Japan | Transverse magnetic recording material mfr. - uses sputtering process to form film of Neodymium-Iron-Boron on surface of non magnetic carrier. |
| US5612145A (en) * | 1991-11-14 | 1997-03-18 | Victor Company Of Japan, Ltd. | Perpendicular magnetic medium and manufacturing method for the medium |
| JP2012207274A (en) * | 2011-03-30 | 2012-10-25 | Hitachi Metals Ltd | Sputtering target for permanent magnet thin film and method for producing the same |
| WO2014038022A1 (en) * | 2012-09-05 | 2014-03-13 | 株式会社日立製作所 | Nd-Fe-B THIN FILM MAGNET, AND METHOD FOR PRODUCING SAME |
| JPWO2014038022A1 (en) * | 2012-09-05 | 2016-08-08 | 株式会社日立製作所 | Nd-Fe-B thin film magnet and method for producing the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0565043B2 (en) | 1993-09-16 |
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