JPS59198707A - Perpendicularly magnetic recording material and manufacture thereof - Google Patents
Perpendicularly magnetic recording material and manufacture thereofInfo
- Publication number
- JPS59198707A JPS59198707A JP58072075A JP7207583A JPS59198707A JP S59198707 A JPS59198707 A JP S59198707A JP 58072075 A JP58072075 A JP 58072075A JP 7207583 A JP7207583 A JP 7207583A JP S59198707 A JPS59198707 A JP S59198707A
- Authority
- JP
- Japan
- Prior art keywords
- film
- perpendicularly
- composition
- magnetic recording
- base material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000005291 magnetic effect Effects 0.000 title claims abstract description 37
- 238000004519 manufacturing process Methods 0.000 title claims description 12
- 239000000463 material Substances 0.000 title abstract description 24
- 239000000203 mixture Substances 0.000 claims abstract description 25
- 229910052742 iron Inorganic materials 0.000 claims abstract description 5
- 230000005415 magnetization Effects 0.000 claims description 21
- 239000010408 film Substances 0.000 abstract description 48
- 238000001704 evaporation Methods 0.000 abstract description 9
- 239000010409 thin film Substances 0.000 abstract description 8
- 238000000034 method Methods 0.000 abstract description 5
- 229910052759 nickel Inorganic materials 0.000 abstract description 5
- 229910020630 Co Ni Inorganic materials 0.000 abstract description 2
- 229910002440 Co–Ni Inorganic materials 0.000 abstract description 2
- 229910045601 alloy Inorganic materials 0.000 abstract description 2
- 239000000956 alloy Substances 0.000 abstract description 2
- 239000000758 substrate Substances 0.000 description 11
- 125000004429 atom Chemical group 0.000 description 8
- 230000008020 evaporation Effects 0.000 description 7
- 230000005294 ferromagnetic effect Effects 0.000 description 7
- 238000001816 cooling Methods 0.000 description 5
- 239000002245 particle Substances 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000004804 winding Methods 0.000 description 2
- 229910020676 Co—N Inorganic materials 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 229920001646 UPILEX Polymers 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- UCNNJGDEJXIUCC-UHFFFAOYSA-L hydroxy(oxo)iron;iron Chemical compound [Fe].O[Fe]=O.O[Fe]=O UCNNJGDEJXIUCC-UHFFFAOYSA-L 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 230000005389 magnetism Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 229910000889 permalloy Inorganic materials 0.000 description 1
- 238000010587 phase diagram Methods 0.000 description 1
- -1 polyethylene terephthalate Polymers 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000010025 steaming Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/62—Record carriers characterised by the selection of the material
- G11B5/64—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent
Landscapes
- Physical Vapour Deposition (AREA)
- Magnetic Record Carriers (AREA)
- Manufacturing Of Magnetic Record Carriers (AREA)
- Thin Magnetic Films (AREA)
Abstract
Description
【発明の詳細な説明】
最近、高密度記録の可能な新しい磁気記録方式として、
垂直磁気記録体式と光磁気記録方式が注目され、研究さ
れているが、これら方式に用いられる媒体は、垂直方向
に磁気異方性會備え且つＫＬＩ、≧２ｘＭｓ２或はＨＣ
□＞ Ｈｃｌｔ 、 Ｂ ｒｔ ＞ Ｂｒｔｔの条件全
満足したいわゆる垂直磁化膜？使用する必要がある。[Detailed Description of the Invention] Recently, as a new magnetic recording method capable of high-density recording,
Perpendicular magnetic recording systems and magneto-optical recording systems are attracting attention and research, but the media used in these systems have magnetic anisotropy in the perpendicular direction and KLI, ≥2xMs2 or HC.
Is it a so-called perpendicular magnetization film that satisfies all the conditions of □＞Hclt, Brt＞Brtt? need to use.
従来、此種の垂直磁化膜の有力なものの１つとして、Ｃ
ｏ−（３ｒ系薄膜があり、スパッタ法と蒸看法により作
成されている。しかし乍ら、スパッタ法では析出速度が
小さいためフロッピーディスクや磁気テープのような大
量に使用する媒体には、量産性の点で問題がある。他方
蒸看法では、析出速度が大きいが、ＣｏとＯｒの蒸気圧
か大きく異なるため長時間にわたる安定したＣ「組成の
制御が困難であり、又この場合、基板を２００〜３００
℃に加熱しておく必要がらυ、未加熱の基板では垂直磁
化膜が得られない欠点がある。Conventionally, C
There are o-(3r-based thin films, which are produced by sputtering and vapor deposition methods. However, the sputtering method has a low deposition rate, making it difficult to mass-produce media used in large quantities such as floppy disks and magnetic tapes. On the other hand, the vaporization method has a high deposition rate, but because the vapor pressures of Co and Or differ greatly, it is difficult to control the stable C composition over a long period of time. ~300
Although it is necessary to heat the substrate to ℃ υ, it has the disadvantage that a perpendicularly magnetized film cannot be obtained with an unheated substrate.
本発明は、これに代や、新しい、基板を加熱しないでも
、優れた垂直磁化膜をもつ有ｆｒｌＪな垂直○気記録体
並Ｖこその製造法全提供するもので、その垂直磁気異方
性は、（ＦｅｘＯｏｙＮｉｚ ）１ 、、Ｏｍで表わ
される組成において、０≦Ｘ≦０．０５．０≦２≦０．
４０ 、０．１５≦ｍ≦０．５０（たソしｘ ＋ ｙ
十ｚ ＝１）の範囲にあること全特徴とする。及び（Ｆ
ｅｘＯｏｙＮｔ ２．）１−ｍＯｉｎで表わされる組成
において、０．４０≦Ｘ≦１． ｏ 、 ｏ≦２≦０．
２５．０．２５≦１ｎ≦０．５０（た”ｉ Ｌ Ｘ ＋
ｙ 十ｚ ＝ １ ）の範囲にあることを特徴とする。The present invention provides an alternative or new method for manufacturing a perpendicular magnetic recording medium having an excellent perpendicular magnetization film without heating the substrate, and its perpendicular magnetic anisotropy. is (FexOoyNiz)1, , in the composition represented by Om, 0≦X≦0.05.0≦2≦0.
40, 0.15≦m≦0.50 (tasoshi x + y
It is assumed that all characteristics are in the range of 10z = 1). and (F
exOoyNt 2. ) In the composition expressed in 1-mOin, 0.40≦X≦1. o, o≦2≦0.
25.0.25≦1n≦0.50 (ta”i L X +
It is characterized by being in the range of y 1 z = 1).
又その製造法は、非磁性基材面に、直接又はその面に軟
質磁性薄膜層を介して、殆んど垂直に入射するようｔＬ
Ｆｅ、 Ｃｏ、 Ｎｉ原子を蒸発させると同時に０２ガ
スを導入して、（ＦｅｘＣｏ、Ｎ１Ｌ）１−ｍＯｍで表
わされる組成から成シ、且っ０≦Ｘ≦０．０５ 。In addition, the manufacturing method is such that the tL is almost perpendicularly incident on the surface of the nonmagnetic base material, either directly or via a soft magnetic thin film layer on that surface.
At the same time as Fe, Co, and Ni atoms are evaporated, 02 gas is introduced to form a composition of (FexCo, N1L)1-mOm, and 0≦X≦0.05.
０≦２≦０．４０．０．１５≦ｍ≦０．５０又は０４０
≦Ｘ≦１０゜０≦２≦０．２５．０．２５≦ｍ≦０．５
０（たソしｘ ＋ｙ ＋ｚ −１）の範囲にある垂直磁
化膜を形成せしめることを特徴とする。0≦2≦0.40.0.15≦m≦0.50 or 040
≦X≦10゜0≦2≦0.25.0.25≦m≦0.5
It is characterized by forming a perpendicularly magnetized film in the range of 0 (transition x + y + z -1).
かくして上記の製造により得られる垂直磁化膜ハ、Ｆｅ
、 Ｃｏ、 Ｎｉ 蒸着による柱状組織に成長した強
磁性結晶粒子相とこれをとやまく非強磁性酸化物相との
２相構造から成る。Thus, the perpendicularly magnetized film obtained by the above manufacturing method is Fe.
It consists of a two-phase structure consisting of a ferromagnetic crystal grain phase grown into a columnar structure by vapor deposition of , Co, and Ni, and a non-ferromagnetic oxide phase surrounding this phase.
次に本発明の実施例につき説明する。Next, examples of the present invention will be described.
本発明者は、先に１％願昭５８−３６６５２号及び仝５
８−３６６５３号で提案したように、Ｃ０−０及びＣｏ
−Ｎｉ −０より成る垂直磁化膜上もつ垂直磁気記録
体全開発したが、今般もう１つの強磁性元素であるＦｅ
’（ｉＨ含んだＦｅ−Ｃｏ−Ｎ１３元系成分にＤ’に導
入した場合について、種々検討した所、第１図に示すよ
うに、斜線で囲む２つの領域Ａ及びＢにおいて、優れた
１部酸化しｆｃ、 ３元成分の垂直磁化膜が得られるこ
とを確認した。The present inventor previously applied for 1% Application No. 58-36652 and
As proposed in No. 8-36653, C0-0 and Co
Although we have developed a complete perpendicular magnetic recording medium on a perpendicularly magnetized film consisting of -Ni -0, we have recently developed another ferromagnetic element, Fe.
'(After conducting various studies on the case where D' is introduced into the Fe-Co-N 13-element system component containing iH, as shown in Figure 1, in the two areas A and B surrounded by diagonal lines, an excellent It was confirmed that a perpendicularly magnetized film of ternary components could be obtained by oxidation.
該第１の領域人は、Ｆｅに近い領域ではｙ３元系状態図
ではＢ ００＠に形成する領域である。The first region is a region close to Fe that forms B 00@ in the y-ternary system phase diagram.
他の１つの領域（２）は、 ００ に近い領域でＨＯＰ
相を形成する領域である。The other area (2) is HOP in an area close to 00.
This is a region where phases are formed.
よく知られているように、垂直磁化膜を得るには、垂直
磁気異方性エネルギーに１が薄膜の垂直方向の反磁界の
エネルギー２πＭへよシ大きいことが必要である。この
場合、垂直磁気異方性としては、結晶磁気異方性と形状
磁気異方性が考えられるが、本発明垂直磁化膜は、垂直
に成長したｐｅ、Ｃｏ、Ｎｉの強磁性柱状粒子相を、ｐ
’ｅ、Ｃｏ。As is well known, in order to obtain a perpendicularly magnetized film, it is necessary that the perpendicular magnetic anisotropy energy of 1 is greater than the energy of the demagnetizing field in the perpendicular direction of the thin film, 2πM. In this case, the perpendicular magnetic anisotropy can be considered to be magnetocrystalline anisotropy or magnetic shape anisotropy, but the perpendicularly magnetized film of the present invention has vertically grown ferromagnetic columnar grain phases of PE, Co, and Ni. , p
'e, Co.
Ｎ１ 等の非強磁性酸化物相によシ隔離した構成になっ
ておシ、シかもその強磁性柱状粒子の粒径は、短軸が約
２００〜１０００＾、長軸が１０００＾〜１μＩｎの細
長い形状をしていることが確認された。従って、大きい
形状磁気異方性が発生している。又Ｘ線回析の結果、０
ｏｌＣ近いＢの領域では、ＨＯＰ構造のＣ軸方向が垂直
方向に配向しておシ、又Ｆｅに近いＡの領域でも、ＢＯ
Ｏ構造の（１００）方向が垂直方向に配向し、その両者
の方向とも夫々の結晶の容易磁化方向であシ、従って、
結晶磁気異方性も本発明の垂直磁化膜で発生して込る。The particle size of the ferromagnetic columnar particles is about 200 to 1000 mm on the short axis and 1000 to 1 μIn on the long axis. It was confirmed that it has an elongated shape. Therefore, large shape magnetic anisotropy occurs. Also, as a result of X-ray diffraction, 0
In the region of B near olC, the C-axis direction of the HOP structure is oriented vertically, and also in the region of A near Fe, BO
The (100) direction of the O structure is oriented perpendicularly, and both directions are easy magnetization directions of the respective crystals, therefore,
Magnetic crystalline anisotropy also occurs in the perpendicularly magnetized film of the present invention.
拳法の０２の導入の役割社、以上のように、垂直柱状粒
子を非強磁性酸化物で隔離する役割と共に、膜全体の飽
和磁化全減少させ、Ｋよ≧２πＭｓ”の条件全満足させ
る役割がある。As mentioned above, the role of introducing Kenpo 02 is that it not only isolates the vertical columnar particles with a non-ferromagnetic oxide, but also completely reduces the saturation magnetization of the entire film and satisfies the condition of K≧2πMs. be.
Ｆ ｅ 、 Ｏｏ 、 Ｎ ｉの蒸発量を一定に保ち乍
らｏ２ガスの導入量を増加させてゆくと、膜中の０２濃
度が増加し、同時に柱状粒子の微細化と隔離が進行して
、飽和磁化の減少と垂直方向の異方性磁界が増加してゆ
く。而して、種々実験の結果、該人の領域では、０組成
が２５ ａｔ％以上で、又該Ｂの領域では１５ ａｔ％
以上で垂直磁化膜が得られ、該（１）の領域では、１５
〜５０ ａｔ％の範囲が有効で、就中、３５〜４５ａｔ
％が最も好１しく、該（２）の領域では、１５〜５Ｑａ
ｔＸ■範囲が有効で、就中、２５〜４５ ａｔ％が最も
好ましい結果を得た。即ち、０組成が５０ ａｔ％會越
えると、すべて非磁性酸化物となジ飽和磁化がなくなる
。これは、酸化物がＦｅＯ、ＯｏＯ、ＮｉＯやこれらの
混晶で−あり、原子比が１＝１となっているためである
と考えられる。入の領域では、０組成が領域Ｂの場合よ
り大きい組成で垂直磁化膜が得られるが、これは、Ｆｅ
側領域は、飽和磁化の値が大きいことと結晶磁気異
方性が小さいことのためである。When the amount of O2 gas introduced is increased while keeping the evaporation amount of Fe, Oo, and Ni constant, the O2 concentration in the film increases, and at the same time, the columnar particles become finer and more isolated. The saturation magnetization decreases and the perpendicular anisotropy field increases. As a result of various experiments, the 0 composition was 25 at% or more in the region of this person, and 15 at% in the region of B.
A perpendicular magnetization film is obtained in the above manner, and in the region (1), 15
A range of ~50 at% is effective, especially 35~45 at%
% is most preferable, and in the region (2), 15 to 5Qa
A range of tX■ was effective, and the most favorable results were obtained with a range of 25 to 45 at%. That is, when the zero composition exceeds 50 at%, the material becomes a non-magnetic oxide and no di-saturation magnetization occurs. This is considered to be because the oxide is FeO, OoO, NiO, or a mixed crystal thereof, and the atomic ratio is 1=1. In the region where Fe
This is because the side region has a large saturation magnetization value and a small magnetocrystalline anisotropy.
以上の２つの領域Ａ、Ｂと上記特定の範囲のＯ組成で得
られる垂直磁化膜の垂直方向の保磁力１４ｃ のｆｉ
ｇ、は４＋ｌ Ｏ〜１００００ｅ程度で、垂直磁り
気記録体としては最も良好な値である。fi of the perpendicular coercive force 14c of the perpendicularly magnetized film obtained in the above two regions A and B and the O composition in the above specific range.
g is about 4+1 O to 10,000e, which is the best value for a perpendicular magnetic recording medium.
而もこの（ｆｉは、後記する製造法において、基板忙加
熱してもしなくても、或は水冷キャンで積極的（・ζ冷
却している場合でも得られ、有利である。従て、従来磁
気テープ、フロッピーディスク等の基拐として、特に耐
熱性の高いポリイミドフィルム等の高価な基材しか使用
できなかった不都合全解消し、これ以外の例えば、一般
の安価なポリエチレンテレフタレート（ＰＩ１３Ｔ）フ
ィルム等任意の材料が基材として使用可能となシ、有利
である。Moreover, in the manufacturing method described later, this (fi) can be obtained with or without intensive heating of the substrate, or even with active (・ζ cooling) with water cooling, which is advantageous. This eliminates the inconvenience of only being able to use expensive substrates, such as particularly heat-resistant polyimide films, as substrates for magnetic tapes, floppy disks, etc., and makes it possible to use other materials such as general inexpensive polyethylene terephthalate (PI13T) films. Advantageously, any material can be used as the substrate.
このように、本発明では、未加熱の室温基板でも良好な
垂直磁気特性が得られる原因は、加熱しないでも、０原
子は、膜茨面の拡散が容易であることに関係して居ると
考えられる。In this way, in the present invention, we believe that the reason why good perpendicular magnetic properties are obtained even with an unheated room temperature substrate is that zero atoms can easily diffuse through the thorny surface of the film even without heating. It will be done.
従来の０ｏ−Ｏｒ系垂直磁化膜はｓ Ｏｒ原子が、ｃｏ
柱状粒子の粒界付近に偏析して非強磁性相客形成して柱
状粒子上隔離する構造によつで１１）られるものである
が、このためには、Ｏｒ原子が１１λ表面で拡散せしめ
る必要があシ、この目的は、基板温度葡高くすることに
ニジ達成されるが、基板温度が低く或は未加熱の室温で
は％ Ｇｒ原子の拡散が悪く岳＠磁化膜が得られない。In the conventional 0o-Or perpendicular magnetization film, the s Or atoms are co
This is achieved by a structure in which Or atoms segregate near the grain boundaries of columnar grains, form non-ferromagnetic phase particles, and are isolated on the columnar grains11).For this purpose, it is necessary for Or atoms to diffuse on the 11λ surface. However, if the substrate temperature is low or unheated at room temperature, the diffusion of Gr atoms is poor and a magnetized film cannot be obtained.
これに対し、本発明では、０２ケ導入・ノーるので、０
原子は膜の入面拡散が容易で、未加熱の室温基板でも充
分垂直磁化膜がイＪられるものと考えられる。又、従来
のＣｏ−０ｒ系垂直磁化膜を蒸着法で作属しようとする
場合は、 ０＋ 組成の制御が困難で、長時りに亘
少均−な垂直磁化膜を得ることが非常に困難であるが、
拳法では、Ｏｏの蒸発速度と０２ガス導入量會一定に保
てば足り、現在の技術ｔもってすれは、極めて容易に長
時間に亘り均一な垂直磁化膜？］ｌ−得ることができる
。On the other hand, in the present invention, 02 pieces are introduced, so 0
Atoms can easily diffuse into the film, and it is thought that a perpendicularly magnetized film can be sufficiently formed even on an unheated room temperature substrate. Furthermore, when trying to create a conventional Co-0r perpendicularly magnetized film by vapor deposition, it is difficult to control the 0+ composition, and it is extremely difficult to obtain a slightly uniform perpendicularly magnetized film over a long period of time. In Although,
In martial arts, it is sufficient to keep the evaporation rate of Oo and the amount of gas introduced constant, and with current technology it is extremely easy to create a perpendicularly magnetized film that is uniform over a long period of time. ]l- can be obtained.
更に本発明によれば、ＰＥＴ基板に垂直礎化脱葡形成し
ても、殆んどカーリングせず、カーリングのはけしいＣ
ｏ −Ｏｒ系垂直磁化膜にくらべるとフロッピーディス
クや磁免テーゾへの応用に極めて有利である。Further, according to the present invention, even when a PET substrate is formed with vertical foundation removal, there is almost no curling, and C
Compared to the o -Or perpendicularly magnetized film, it is extremely advantageous in application to floppy disks and magnetoelectromagnetic devices.
尚、Ｆｅ−Ｃｏ−Ｎｉ系組底において、前記Ａ及びＢで
示した領域のみで、垂直磁化膜が得られ、他の領域で得
られない原因については、現在充分明確ではない。しか
し、前記Ａ及びＢ以外の領域では、すべてＦＯＯ相で多
ることを考えると、おそらく柱状粒子構造に変化がある
と考えられる。尚、本発明の垂直磁化膜は％Ｆｅ、Ｃｏ
。In addition, in the Fe-Co-Ni system bottom, the reason why a perpendicular magnetization film is obtained only in the regions indicated by A and B and not in other regions is not sufficiently clear at present. However, considering that all regions other than A and B are dominated by the FOO phase, it is thought that there is probably a change in the columnar grain structure. Incidentally, the perpendicular magnetization film of the present invention has %Fe, Co
.
Ｎｉ及びＯから成るが、それ以外の他のＯｒ 、Ｖ。Consists of Ni and O, but other Or, V.
Ｍ ｏ 、 Ｗ 、几り、Ｔｉ、几ｅ 等の元素が微意
に混入しても差支えない。There is no problem even if elements such as Mo, W, phosphor, Ti, phosphor, etc. are mixed in slightly.
次に第２図示の本発明を実施するＡ窒蒸唐装置全使用し
、その製造法につき説明する。Next, the entire A nitrogen steaming apparatus shown in FIG. 2 for carrying out the present invention will be used and its manufacturing method will be explained.
第２図は、本発明上実施する真空蒸着装置を示し、真空
ポンプに１９１Ｊに於て接続する容器（１）内に、回転
冷却キャン（２）とその直下に電子ビーム１発源（３）
ヲ設け、その上部両側に巻解しローラー（４）と巻則ｐ
ローラー（５）と全配設し、該ローラー（４）に巻きつ
けた非磁性基材、例えば、ロール状のＰＦＳＴテープ基
材Ｃを、冷却キャン（２）の周面なその回動と共に回動
走行しローラー（５）に巻き取られるようにした。本発
明によれば、容器（１）ト〕に酸素を導入するための供
給管（６）ヲ備える。Fig. 2 shows a vacuum evaporation apparatus according to the present invention, in which a rotary cooling can (2) and an electron beam source (3) are placed directly below it in a container (1) connected to a vacuum pump at 191J.
A winding roller (4) and winding roller (4) are provided on both sides of the upper part.
A non-magnetic base material, for example, a roll-shaped PFST tape base material C, which is completely disposed with the roller (5) and wound around the roller (4), is rotated along the circumferential surface of the cooling can (2). It was designed to run dynamically and be wound up on rollers (5). According to the invention, a supply pipe (6) is provided for introducing oxygen into the container (1).
１示の例では、これを走行テープＣ面の近傍でｒｌｏす
る長手のものとした。（７）は、蒸発源直上に対向する
冷却キャン（２）の最下面を残して水平に配置した防着
板を示し、これにより蒸発源ｄからの蒸発Ｆｅ原子、Ｃ
ｏ原子及びＮｉ原子がテープ基材Ｃ面に対して実質上垂
直に入射蒸着するようにした。In the example shown in No. 1, this is a long tape that rlo near the C surface of the running tape. (7) shows an adhesion prevention plate placed horizontally leaving the bottom surface of the cooling can (2) facing directly above the evaporation source.
O atoms and Ni atoms were incidentally deposited substantially perpendicularly to the C surface of the tape base material.
次に本装置を使用し、先づｌＸｌ０−５）−ル以下まで
容器（１）内を排気した後、蒸発材料ｄ１即ち、Ｆｅ−
０ｏ−Ｎｉ合金全一定速度で蒸発させながら種々の分圧
になるように０．カス導入量全変化させて各種組成の垂
直蒸看膜全テープ基材Ｃ面に形成し本発明の垂直磁気テ
ープを得た。尚、この製法において、蒸発材料ｄとして
成分組成割合を色々に変えたものを使用し各種組成の垂
直蒸着膜をもつ磁気テープを装置した。又基材Ｃの走行
速度を変化させて、膜厚１０００〜ｘｏｏｏｏｉの範囲
で異なる各種のものを製造した。これら各種製品につき
、撮動型磁気測定器と螢光Ｘ線によシ磁気特性と合金組
成の測定を行なった。Next, using this device, first evacuate the inside of the container (1) to below lXl0-5)-1, and then
The 0o-Ni alloy was evaporated at a constant rate while varying the partial pressure. The perpendicular magnetic tape of the present invention was obtained by forming vertical evaporation films of various compositions on the C side of the entire tape base material while varying the amount of introduced waste. In this manufacturing method, magnetic tapes having vertically deposited films of various compositions were prepared by using various composition ratios of the evaporation material d. Furthermore, by changing the traveling speed of the base material C, various types of films with different film thicknesses ranging from 1000 to xoooooi were manufactured. The magnetic properties and alloy composition of these various products were measured using an imaging magnetometer and fluorescent X-rays.
との結果、０組成を１５ａｔ％の一定にしたＦｅ。As a result, the zero composition was kept constant at 15 at%.
（’Ｊｏ 、Ｎｉ組成を変化させた場合のＨｃｌ／Ｊ（
ｃｓＯ値とＢ ｒ１／ Ｂ ｒ ＃の値とを測定した。('Jo, Hcl/J when changing the Ni composition (
The csO value and the B r1/B r # value were measured.
その結果を第３図及び第４図に示す。これから明らかな
ように、Ｂの領域の組成では、Ｈｃｌ ／Ｈｃ ｅ及び
Ｂｒｌ／Ｂｒｌの両方とも１の値を越えておシ、垂直磁
化膜が得られ、人の領域の組成では、Ｈｃ１／ＨＣ＃の
値は１以上であるが、Ｂｒ工／ Ｂ ｒ ｙの値は小さ
く垂直磁化膜になっていないことが分る。又そのＡ、Ｂ
領域以外のＦＣＣ相領域では、両者とも１以下の値で垂
直磁化膜は得られないことが分る。同様に、第５図及び
第６図に２５ ａｔ％０の場合の結果全話す。ＡＢ両領
領域組成とも垂直磁化膜が得られることが分る。The results are shown in FIGS. 3 and 4. As is clear from this, in the composition of the region B, both Hcl/Hc e and Brl/Brl exceed 1, and a perpendicularly magnetized film is obtained. It can be seen that the value of # is 1 or more, but the value of Br/Br y is small, indicating that the film is not a perpendicularly magnetized film. Also, A and B
It can be seen that in the FCC phase region other than the FCC phase region, both values are less than 1 and a perpendicular magnetization film cannot be obtained. Similarly, FIGS. 5 and 6 show all the results for the case of 25 at% 0. It can be seen that a perpendicular magnetization film can be obtained in both the AB and A region compositions.
第７図及び第８図は、４Ｑａｔ％０の場合を示し、共に
更にすぐれた垂直磁化膜が得られることが分る。FIG. 7 and FIG. 8 show the case of 4Qat%0, and it can be seen that a more excellent perpendicular magnetization film can be obtained in both cases.
尚、囚には示さないが、１５ａｔ％０未満では、酸素量
が不足し、すべての組成において垂直磁化膜が得られず
、又逆に、５０ａｔ％を越える場合では、すべて非磁性
基材面となシ、飽和磁化が無くなってしまうことが確認
された。Although not shown in detail, if the content is less than 15 at%, the oxygen content will be insufficient and a perpendicularly magnetized film will not be obtained in any composition, and conversely, if it exceeds 50 at%, the non-magnetic base material surface will be It was confirmed that saturation magnetization disappeared.
又、垂直磁気記録方式においては、垂直磁化膜と非磁性
基材面との間にパーマロイ、Ｆｅ、Ｃｏ。In the perpendicular magnetic recording method, permalloy, Fe, or Co is used between the perpendicular magnetization film and the nonmagnetic base material surface.
Ｃｏ Ｚｒ非晶質膜等の比較的軟質磁性を示し、飽和
磁化の大きい磁性体の薄膜を介在させると、記録電流を
小さくでき、又再生出力全増大できるので、本発明によ
れば、予め、非磁性基材面に該軟磁性薄膜層キ形成した
後、その薄膜層の上面に、例えば上記の実施例に従い、
所定の本発明の垂直磁化膜全形成することによシ、該軟
磁性薄膜層全介入した本発明垂直磁気記録体を製造する
ことができる。If a thin film of a magnetic material exhibiting relatively soft magnetism and high saturation magnetization, such as a CoZr amorphous film, is interposed, the recording current can be reduced and the total reproduction output can be increased. After forming the soft magnetic thin film layer on the non-magnetic base material surface, for example, according to the above embodiment, on the upper surface of the thin film layer,
By completely forming the predetermined perpendicular magnetization film of the present invention, it is possible to manufacture the perpendicular magnetic recording body of the present invention in which the soft magnetic thin film layer is entirely interposed.
このように、本発明によるときは、特許請求の範囲に記
載の特定の条件組成において、垂直磁化膜が得られ、そ
の製法は、０２の導入により容易に所定の上記の垂直磁
化膜をもった磁気記録体が得られ、この場合、基材全加
熱しないでも優れた製品全もたらし、基材の材料は安価
なものが使用でき、磁気テープ、ディスク、フロッピー
ディスク等がカールや反りかえりなく良好な垂直磁気記
録体を製造し得る効果ヶ有する。As described above, according to the present invention, a perpendicularly magnetized film can be obtained under the specific conditions and compositions described in the claims, and the manufacturing method thereof is such that the above-described perpendicularly magnetized film can be easily obtained by introducing 02. A magnetic recording medium can be obtained, and in this case, an excellent product can be obtained without completely heating the base material, inexpensive materials can be used for the base material, and magnetic tapes, disks, floppy disks, etc. can be produced without curling or warping. It has the effect of making it possible to manufacture perpendicular magnetic recording bodies.
第１図は、本発明における垂直磁化膜の金属成分組成上
特定する図、第２図は本発明の製造法を実施する装置の
１例の裁断側面図、第３＠乃至第８図は、各種成分組成
と磁気特性との関係を示す図である。
Ａ、Ｂ・・・本発明の金ハ組成領域、
（１）・・・容器、 。１６．基材、（３）
・・・蒸発源、 ｄ・・・蒸発材料、（４１（
５１・・・ローラー、（６）・・・酸素ガス供給管、（
７）・・・防着板。
特許出願人 日本真空技術株式会社
代 理 人 北 杓 欣 −他２名FIG. 1 is a diagram specifying the metal composition of the perpendicularly magnetized film according to the present invention, FIG. 2 is a cut side view of an example of an apparatus for carrying out the manufacturing method of the present invention, and FIGS. 3 to 8 are: FIG. 3 is a diagram showing the relationship between various component compositions and magnetic properties. A, B... Gold composition area of the present invention, (1)... Container. 16. Base material, (3)
...Evaporation source, d...Evaporation material, (41(
51...Roller, (6)...Oxygen gas supply pipe, (
7)...Anti-adhesion plate. Patent applicant: Japan Vacuum Technology Co., Ltd. Agent: Kin Kita - 2 others
Claims (1)
わされる組成において、０≦Ｘ≦０．０５，０≦２≦０
．４０゜０．１５≦ｍ≦０５０（たソしｘ ＋ ｙ 十
ｚ ＝ １ ）の範囲にあること′ｆｒ：特徴とする垂
直磁化膜を備えた垂直磁気記録体。 ２ （ＦｅｘＣｏ、Ｎｉｚ ） ｔ −ｍＯｍで表わ
されるｍ成においてｓＯ，４０≦Ｘ≦１．０．０≦２≦
０．２５゜０．２５≦ｍ≦０．５０（たソしｘ ＋ｙ
十ｚ＝ １ ）の範囲にあること全特徴とする垂直磁化
膜を備えた垂直磁気記録体。 ３ 非磁性基材面に、直接又はその面に軟質磁性薄膜層
勿介して、殆んど垂直に入射するようにＦｅ、 Ｃｏ、
Ｎｉ原子全蒸発させると同時に、鳴ガスｒ導入して、
（ＦｅｘＯｏｙＮｉｚ□）１−ｍＯｍで茨わされる組成
から成シ、且つ（）≦Ｘ≦０．０５゜０≦２≦Ｑ、４０
、０．１５≦ｍ≦０．５０又は０．４０≦Ｘ≦１０゜
０≦２≦０．２５．０．２５≦ｍ≦ｏ５ｏ（ｆｃ’ｒＬ
ｘ＋ｙ十ｚ ＝ １ ）の範囲にある垂直磁化膜？形成
せしめること全特徴とする垂ｌは磁気記録体の製造法。[Claims] In the composition represented by 1 (Fe) (OoyN+ z )1- mOm, 0≦X≦0.05, 0≦2≦0
．． 40° 0.15≦m≦050 (x + y + z = 1) 'fr: Perpendicular magnetic recording body with a characteristic perpendicular magnetization film. 2 (FexCo, Niz) sO, 40≦X≦1.0.0≦2≦ in the m configuration represented by t - mOm
0.25゜0.25≦m≦0.50 (Tasoshi x +y
A perpendicular magnetic recording body comprising a perpendicular magnetization film characterized in that the perpendicular magnetization is in the range of 10z=1). 3. Fe, Co,
At the same time as all Ni atoms are evaporated, a gas r is introduced,
(FexOoyNiz□) Consisting of a composition that is 1-mOm, and ()≦X≦0.05゜0≦2≦Q, 40
, 0.15≦m≦0.50 or 0.40≦X≦10゜0≦2≦0.25.0.25≦m≦o5o (fc'rL
A perpendicularly magnetized film in the range of x + y + z = 1)? A method for producing a magnetic recording medium.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58072075A JPS59198707A (en) | 1983-04-26 | 1983-04-26 | Perpendicularly magnetic recording material and manufacture thereof |
| DE8484301530T DE3465647D1 (en) | 1983-03-08 | 1984-03-08 | A magnetic recording member and a manufacturing method for such a member |
| EP84301530A EP0122030B1 (en) | 1983-03-08 | 1984-03-08 | A magnetic recording member and a manufacturing method for such a member |
| US07/412,535 US5024854A (en) | 1983-03-08 | 1989-09-22 | Method of manufacturing perpendicular type magnetic recording member |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58072075A JPS59198707A (en) | 1983-04-26 | 1983-04-26 | Perpendicularly magnetic recording material and manufacture thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59198707A true JPS59198707A (en) | 1984-11-10 |
| JPH0337724B2 JPH0337724B2 (en) | 1991-06-06 |
Family
ID=13478921
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58072075A Granted JPS59198707A (en) | 1983-03-08 | 1983-04-26 | Perpendicularly magnetic recording material and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59198707A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60170213A (en) * | 1984-02-15 | 1985-09-03 | Yoshifumi Sakurai | Magnetic thin film and manufacture thereof |
| US4797330A (en) * | 1986-03-18 | 1989-01-10 | Kanegafuchi Kagaku Kogyo Kabushiki Kaisha | Perpendicular magnetic storage medium |
| JPH0191314A (en) * | 1987-10-01 | 1989-04-11 | Kanegafuchi Chem Ind Co Ltd | Perpendicular magnetic recording medium |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5615014A (en) * | 1979-07-18 | 1981-02-13 | Matsushita Electric Ind Co Ltd | Metallic thin film type magnetic recording medium |
| JPS57113417A (en) * | 1980-12-29 | 1982-07-14 | Sony Corp | Magnetic recording medium |
| JPS59140629A (en) * | 1983-01-31 | 1984-08-13 | Hitachi Ltd | Vertical magnetic recording medium and its production |
| JPS59163810A (en) * | 1983-03-08 | 1984-09-14 | Ulvac Corp | Vertical magnetic recording means and manufacture of the same |
-
1983
- 1983-04-26 JP JP58072075A patent/JPS59198707A/en active Granted
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5615014A (en) * | 1979-07-18 | 1981-02-13 | Matsushita Electric Ind Co Ltd | Metallic thin film type magnetic recording medium |
| JPS57113417A (en) * | 1980-12-29 | 1982-07-14 | Sony Corp | Magnetic recording medium |
| JPS59140629A (en) * | 1983-01-31 | 1984-08-13 | Hitachi Ltd | Vertical magnetic recording medium and its production |
| JPS59163810A (en) * | 1983-03-08 | 1984-09-14 | Ulvac Corp | Vertical magnetic recording means and manufacture of the same |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60170213A (en) * | 1984-02-15 | 1985-09-03 | Yoshifumi Sakurai | Magnetic thin film and manufacture thereof |
| US4797330A (en) * | 1986-03-18 | 1989-01-10 | Kanegafuchi Kagaku Kogyo Kabushiki Kaisha | Perpendicular magnetic storage medium |
| JPH0191314A (en) * | 1987-10-01 | 1989-04-11 | Kanegafuchi Chem Ind Co Ltd | Perpendicular magnetic recording medium |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0337724B2 (en) | 1991-06-06 |
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