JPS6357784B2 - - Google Patents

Info

Publication number: JPS6357784B2
Authority: JP; Japan
Prior art keywords: type; boron; ppm; layer; photoconductor layer
Prior art date: 1979-06-22
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired

Application number

JP54079392A

Other languages

English (en)

Japanese (ja)

Other versions

JPS564150A (en

Inventor

Takao Kawamura

Kazuo Oota

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Minolta Co Ltd

Original Assignee

Minolta Co Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1979-06-22

Filing date

1979-06-22

Publication date

1988-11-14

1979-06-22 Application filed by Minolta Co Ltd filed Critical Minolta Co Ltd

1979-06-22 Priority to JP7939279A priority Critical patent/JPS564150A/ja

1981-01-17 Publication of JPS564150A publication Critical patent/JPS564150A/ja

1988-11-14 Publication of JPS6357784B2 publication Critical patent/JPS6357784B2/ja

Status Granted legal-status Critical Current

Links

229910021417 amorphous silicon Inorganic materials 0.000 claims description 117
ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 64
229910052796 boron Inorganic materials 0.000 claims description 64
239000000758 substrate Substances 0.000 claims description 48
239000004065 semiconductor Substances 0.000 claims description 35
108091008695 photoreceptors Proteins 0.000 claims description 34
239000000463 material Substances 0.000 claims description 10
239000010410 layer Substances 0.000 description 101
OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 22
229910052698 phosphorus Inorganic materials 0.000 description 22
239000011574 phosphorus Substances 0.000 description 22
238000000354 decomposition reaction Methods 0.000 description 16
239000007789 gas Substances 0.000 description 15
238000000034 method Methods 0.000 description 14
BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 10
229910052782 aluminium Inorganic materials 0.000 description 10
XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 10
230000007423 decrease Effects 0.000 description 10
239000000969 carrier Substances 0.000 description 9
238000006243 chemical reaction Methods 0.000 description 9
238000004519 manufacturing process Methods 0.000 description 9
239000012535 impurity Substances 0.000 description 8
229910052711 selenium Inorganic materials 0.000 description 8
239000011669 selenium Substances 0.000 description 8
238000002474 experimental method Methods 0.000 description 7
230000035945 sensitivity Effects 0.000 description 7
239000002356 single layer Substances 0.000 description 7
230000003595 spectral effect Effects 0.000 description 6
238000010586 diagram Methods 0.000 description 5
238000003912 environmental pollution Methods 0.000 description 5
238000005259 measurement Methods 0.000 description 5
230000001105 regulatory effect Effects 0.000 description 5
XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
238000005299 abrasion Methods 0.000 description 4
230000000694 effects Effects 0.000 description 4
230000003287 optical effect Effects 0.000 description 4
229910001370 Se alloy Inorganic materials 0.000 description 3
238000005516 engineering process Methods 0.000 description 3
WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 2
229910052785 arsenic Inorganic materials 0.000 description 2
229910052980 cadmium sulfide Inorganic materials 0.000 description 2
230000000052 comparative effect Effects 0.000 description 2
230000014759 maintenance of location Effects 0.000 description 2
239000000203 mixture Substances 0.000 description 2
238000011160 research Methods 0.000 description 2
239000011347 resin Substances 0.000 description 2
229920005989 resin Polymers 0.000 description 2
229910052710 silicon Inorganic materials 0.000 description 2
239000000126 substance Substances 0.000 description 2
-1 that is Inorganic materials 0.000 description 2
239000011787 zinc oxide Substances 0.000 description 2
CMSGUKVDXXTJDQ-UHFFFAOYSA-N 4-(2-naphthalen-1-ylethylamino)-4-oxobutanoic acid Chemical compound C1=CC=C2C(CCNC(=O)CCC(=O)O)=CC=CC2=C1 CMSGUKVDXXTJDQ-UHFFFAOYSA-N 0.000 description 1
241000347389 Serranus cabrilla Species 0.000 description 1
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
238000013459 approach Methods 0.000 description 1
239000011230 binding agent Substances 0.000 description 1
230000015572 biosynthetic process Effects 0.000 description 1
230000008859 change Effects 0.000 description 1
239000011248 coating agent Substances 0.000 description 1
238000000576 coating method Methods 0.000 description 1
229910021419 crystalline silicon Inorganic materials 0.000 description 1
238000002425 crystallisation Methods 0.000 description 1
230000008025 crystallization Effects 0.000 description 1
230000003247 decreasing effect Effects 0.000 description 1
230000007547 defect Effects 0.000 description 1
238000011161 development Methods 0.000 description 1
238000009792 diffusion process Methods 0.000 description 1
230000005684 electric field Effects 0.000 description 1
229910052732 germanium Inorganic materials 0.000 description 1
239000011521 glass Substances 0.000 description 1
238000010438 heat treatment Methods 0.000 description 1
230000006872 improvement Effects 0.000 description 1
238000002347 injection Methods 0.000 description 1
239000007924 injection Substances 0.000 description 1
230000001678 irradiating effect Effects 0.000 description 1
239000011159 matrix material Substances 0.000 description 1
239000005300 metallic glass Substances 0.000 description 1
238000013508 migration Methods 0.000 description 1
230000005012 migration Effects 0.000 description 1
230000008569 process Effects 0.000 description 1
230000002250 progressing effect Effects 0.000 description 1
239000010703 silicon Substances 0.000 description 1
230000007847 structural defect Effects 0.000 description 1
229910052714 tellurium Inorganic materials 0.000 description 1
230000001988 toxicity Effects 0.000 description 1
231100000419 toxicity Toxicity 0.000 description 1
WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
229910052721 tungsten Inorganic materials 0.000 description 1
239000010937 tungsten Substances 0.000 description 1
238000007738 vacuum evaporation Methods 0.000 description 1
239000011701 zinc Substances 0.000 description 1
229910052984 zinc sulfide Inorganic materials 0.000 description 1

Landscapes

Photoreceptors In Electrophotography (AREA)
Light Receiving Elements (AREA)

JP7939279A 1979-06-22 1979-06-22 Electrophotographic receptor Granted JPS564150A (en)

Priority Applications (1)

Application Number	Priority Date	Filing Date	Title
JP7939279A JPS564150A (en)	1979-06-22	1979-06-22	Electrophotographic receptor

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP7939279A JPS564150A (en)	1979-06-22	1979-06-22	Electrophotographic receptor

Publications (2)

Publication Number	Publication Date
JPS564150A JPS564150A (en)	1981-01-17
JPS6357784B2 true JPS6357784B2 (de)	1988-11-14

Family

ID=13688583

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP7939279A Granted JPS564150A (en)	1979-06-22	1979-06-22	Electrophotographic receptor

Country Status (1)

Country	Link
JP (1)	JPS564150A (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS5752178A (en) *	1980-09-13	1982-03-27	Canon Inc	Photoconductive member
JPH0629977B2 (ja) *	1981-06-08	1994-04-20	株式会社半導体エネルギー研究所	電子写真用感光体
US4343881A (en) *	1981-07-06	1982-08-10	Savin Corporation	Multilayer photoconductive assembly with intermediate heterojunction
JPS5888753A (ja) *	1981-11-24	1983-05-26	Oki Electric Ind Co Ltd	電子写真感光体
JPS6017452A (ja) *	1984-06-25	1985-01-29	Shunpei Yamazaki	複写機の作製方法
EP0215134B1 (de)	1985-02-22	1990-08-08	Kawasaki Steel Corporation	Herstellungsverfahren für unidirektionale siliziumstahlplatte mit aussergewöhnlichem eisenverlust
JPS61221754A (ja) *	1985-03-27	1986-10-02	Fujitsu Ltd	電子写真感光体
US4698288A (en) *	1985-12-19	1987-10-06	Xerox Corporation	Electrophotographic imaging members having a ground plane of hydrogenated amorphous silicon
JPS6326355A (ja) *	1986-07-18	1988-02-03	Nippon Kokan Kk <Nkk>	表面に絶縁皮膜を有する珪素鉄板の製造方法
DE3886146T2 (de) *	1987-09-10	1994-04-14	Kawasaki Steel Co	Siliziumstahlbleche mit niedrigem Eisenverlust und Verfahren zur Herstellung derselben.
CA2089465C (en) *	1992-02-13	1996-06-11	Takao Kanai	Oriented electrical steel sheet having low core loss and method of manufacturing same

Citations (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US3041166A (en) *	1958-02-12	1962-06-26	Xerox Corp	Xerographic plate and method
JPS53144338A (en) *	1977-05-23	1978-12-15	Ricoh Co Ltd	Electrophotographic photoreceptor
EP0001549A1 (de) *	1977-10-19	1979-05-02	Siemens Aktiengesellschaft	Verfahren zur Herstellung einer lichtempfindlichen Oberflächenschicht auf einer Drucktrommel für elektrostatische Fotokopierverfahren
JPS54121743A (en) *	1978-03-14	1979-09-21	Canon Inc	Electrophotographic image forming member

1979
- 1979-06-22 JP JP7939279A patent/JPS564150A/ja active Granted

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US3041166A (en) *	1958-02-12	1962-06-26	Xerox Corp	Xerographic plate and method
JPS53144338A (en) *	1977-05-23	1978-12-15	Ricoh Co Ltd	Electrophotographic photoreceptor
EP0001549A1 (de) *	1977-10-19	1979-05-02	Siemens Aktiengesellschaft	Verfahren zur Herstellung einer lichtempfindlichen Oberflächenschicht auf einer Drucktrommel für elektrostatische Fotokopierverfahren
JPS5478135A (en) *	1977-10-19	1979-06-22	Siemens Ag	Electronic photographic printing drum and method of producing same
JPS54121743A (en) *	1978-03-14	1979-09-21	Canon Inc	Electrophotographic image forming member

Also Published As

Publication number	Publication date
JPS564150A (en)	1981-01-17

Publication	Publication Date	Title
EP0094224B1 (de)	1987-10-28	Photorezeptor
JPH0233146B2 (de)	1990-07-25
US4409311A (en)	1983-10-11	Photosensitive member
JPS6357784B2 (de)	1988-11-14
US4489149A (en)	1984-12-18	Electrophotographic amorphous silicon member
JPS6243653A (ja)	1987-02-25	光導電材料
US5075187A (en)	1991-12-24	Electrophotographic photoreceptor with oxide of Al, Zr or Ta as charge transport layer
JPH0233148B2 (de)	1990-07-25
JPH0789232B2 (ja)	1995-09-27	電子写真感光体
EP0276494A2 (de)	1988-08-03	Spektrale Sensibilisierung photoleitfähiger Elemente aus amorphem Silizium
JPH0810332B2 (ja)	1996-01-31	電子写真感光体の製造方法
JPH0338584B2 (de)	1991-06-11
JPS59212843A (ja)	1984-12-01	電子写真感光体
JPS5967553A (ja)	1984-04-17	記録体
JPH0241023B2 (de)	1990-09-14
JP3113453B2 (ja)	2000-11-27	電子写真感光体の製法
JP2722074B2 (ja)	1998-03-04	電子写真感光体
JPS6382416A (ja)	1988-04-13	電子写真感光体
JPS5967540A (ja)	1984-04-17	記録体
JPH01315764A (ja)	1989-12-20	電子写真感光体
JPS6239872A (ja)	1987-02-20	電子写真感光体
JPH0789233B2 (ja)	1995-09-27	電子写真感光体
JPS6055350A (ja)	1985-03-30	電子写真用光導電部材
JPH01315758A (ja)	1989-12-20	電子写真感光体
JPS63104063A (ja)	1988-05-09	電子写真感光体