JPS6338265A - Method for bonding anode - Google Patents
Method for bonding anodeInfo
- Publication number
- JPS6338265A JPS6338265A JP18251586A JP18251586A JPS6338265A JP S6338265 A JPS6338265 A JP S6338265A JP 18251586 A JP18251586 A JP 18251586A JP 18251586 A JP18251586 A JP 18251586A JP S6338265 A JPS6338265 A JP S6338265A
- Authority
- JP
- Japan
- Prior art keywords
- bonding
- anode
- anodic bonding
- voltage
- cap
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims description 17
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 33
- 239000010703 silicon Substances 0.000 claims abstract description 33
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 33
- 238000010438 heat treatment Methods 0.000 claims abstract description 6
- 239000011521 glass Substances 0.000 claims description 29
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical group C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 13
- 239000004065 semiconductor Substances 0.000 claims description 7
- 238000001514 detection method Methods 0.000 claims 2
- 239000004020 conductor Substances 0.000 abstract description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 21
- 239000005297 pyrex Substances 0.000 description 21
- 238000010586 diagram Methods 0.000 description 5
- 239000000919 ceramic Substances 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- -1 AS can be mentioned Chemical class 0.000 description 1
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
Landscapes
- Measuring Fluid Pressure (AREA)
- Pressure Sensors (AREA)
Abstract
Description
【発明の詳細な説明】
［発明の目的］
（産業上の利用分野）
本発明は、接合部材間に直流電圧印加を行い両部材を接
合する陽極接合方法に関し、詳しくは１つの部材に２以
上の部材を接合でる接合方法に関する。[Detailed Description of the Invention] [Object of the Invention] (Industrial Field of Application) The present invention relates to an anodic bonding method for bonding two or more members to each other by applying a DC voltage between the members. The present invention relates to a joining method for joining members.
本発明は特に熱膨張係数の近似した部材の接合に用いら
れ、例えばガラス、セラミックス、金属、シリコン半導
体等の材料の接合に用いられる。The present invention is particularly used for joining members having similar coefficients of thermal expansion, for example, for joining materials such as glass, ceramics, metals, and silicon semiconductors.
〈従来技術）
近年、ガラス、セラミックス、金属、シリコン半導体等
の接合方法どして、熱歪が少な・（信頼性の高い陽極接
合が）り用され始めている。(Prior Art) In recent years, anodic bonding, which causes less thermal distortion and is highly reliable, has begun to be used as a bonding method for glass, ceramics, metals, silicon semiconductors, etc.
第５図は従来の陽極接合方法にＪ：リシリコン感圧素子
１０（第１部材）にパイレックスガラスよりなる台座２
０（第２部材）及び−１−Ｖ・ツブを３０（第３部材）
を接合する１例を示づ構成図である。Figure 5 shows the conventional anodic bonding method.
0 (second member) and -1-V・30 (third member)
FIG. 2 is a configuration diagram showing an example of joining.
第５図に示すように、シリコン感圧素子１０は接合面１
２においてパイレックスガラス製台座２０と当接し、接
合面１３において、パイ１ノツクスガラス製キヤツプ３
０と当接している。従来の陽極接合方法の１例によれば
シリコン感圧素子１０と台座２０及びキャップ３０とを
各々の接合面１２．１３において、陽極接合するために
、シリコン感圧素子１０の接合面１２．１３以外の場所
に陽極電極ビン４０を接続し、又は、これに類似する電
極部材を接合しく特開昭６０−８５５６８号公報）、台
座２０の接合面１２の反対側の面２２及びキャップ３０
の接合面１３の反対側の面３３には、陰極電極板５０を
各々接続し、約４００℃の加熱下において約８００ｖの
直流電圧を印加することが通常である。As shown in FIG. 5, the silicon pressure sensitive element 10 has a bonding surface 1
2, the Pyrex glass cap 3 contacts the Pyrex glass base 20, and the Pyrex glass cap 3 contacts the Pyrex glass base 20 at the joint surface 13.
It is in contact with 0. According to one example of a conventional anodic bonding method, in order to anodic bond the silicon pressure sensitive element 10, the pedestal 20, and the cap 30 at their respective bonding surfaces 12.13, the bonding surfaces 12.13 of the silicon pressure sensitive element 10 are bonded together. In order to connect the anode electrode bottle 40 or to join a similar electrode member to a location other than the above (Japanese Unexamined Patent Publication No. 60-85568), the surface 22 of the pedestal 20 opposite to the joint surface 12 and the cap 30
Usually, a cathode electrode plate 50 is connected to the surface 33 on the opposite side of the bonding surface 13, and a DC voltage of about 800 V is applied under heating at about 400.degree.
（発明が解決しようとづ“る問題点）
しかし、かかる陽極接合方法においては、陽極電極ビン
４０の形状を非常に小さなものとするか、そうでなくと
もシリコン感圧素子１０の形状を充分大きなものとしな
ければ、シリコン感圧素子１０に電極を接続することは
困難である。又、陽極電極ビン４０は、シリコン感圧＃
素子１０と点接触となりやすく、かつ接合面１２．１３
と離れた位置にあるため、接合面１２．１３に流れる接
合電流が場所的に不均一となり、均一な陽極接合が行わ
れないという問題があった。(Problem to be Solved by the Invention) However, in this anodic bonding method, the shape of the anode electrode bin 40 must be made very small, or the shape of the silicon pressure-sensitive element 10 must be made sufficiently large. Otherwise, it is difficult to connect the electrode to the silicon pressure-sensitive element 10. Also, the anode electrode bin 40 is made of silicon pressure-sensitive #
It is easy to make point contact with the element 10, and the bonding surface 12.13
Since the bonding surfaces 12 and 13 are located far apart from each other, the bonding current flowing through the bonding surfaces 12 and 13 becomes uneven locally, resulting in a problem in that uniform anodic bonding is not performed.
−４一
本発明は上記事情に鑑み、案出されたものであり、上記
シリコン感圧素子１０への陽極電極ビン４０の接続を不
要ならしめ、接合面１２及び１３において均一な陽極接
合が可能な陽極接合方法を提供しようとするものである
。-41 The present invention has been devised in view of the above circumstances, and makes it unnecessary to connect the anode electrode bin 40 to the silicon pressure-sensitive element 10, and enables uniform anodic bonding on the bonding surfaces 12 and 13. The purpose of this invention is to provide a method for anodic bonding.
［発明の構成］
（問題点を解決するための技術的手段）本発明に係る陽
極接合方法は、少なくども半導体チップ等の第１部材の
第１接合而にガラス等の第２部材を当接し、該第１部材
を直流電源の！Ｉｌｉ極に、該第２部材を直流電源の陰
極に接続して、該第１部材と該第２部材とを陽極接合す
る第１工程と、
該第１部材の第２接合面に当接されたガラス等の第３部
材を直流電源の陰極に接続し、前記第２部材を直流電源
の陽極に接続して、該第２部材から該第１部材を通じて
該第３部材に電流を通電して、該第１部材と該第３部材
とを陽極接合する第２工程とよりなることを特徴とする
。[Structure of the Invention] (Technical Means for Solving the Problems) The anodic bonding method according to the present invention includes at least contacting a second member such as glass with a first bonded member such as a semiconductor chip. , the first member is a DC power source! a first step of anodic bonding the first member and the second member by connecting the second member to the cathode of a DC power source; A third member such as a glass plate is connected to a cathode of a DC power source, the second member is connected to an anode of the DC power source, and a current is passed from the second member to the third member through the first member. , a second step of anodic bonding the first member and the third member.
換言すれば、
−５一
本発明は、陽極接合の際の印加電圧と逆方向電圧を陽極
接合完了面に印加することにより、該逆方向電圧ににる
電流が前記接合面に流れるという知見に基づくものであ
る。In other words, -5 - The present invention is based on the knowledge that by applying a voltage in the opposite direction to the voltage applied during anodic bonding to the surface where the anodic bonding is completed, a current corresponding to the reverse voltage flows to the bonded surface. It is based on
ここで、第１部材には、シリコン、ゲルマニウム、Ｇａ
ＡＳ等の半導体又は金属を挙げることができ、又、第２
部材および第３部材は、加熱により導電性を示す材料で
あればよくパイレックスガラス等の小つケイ酸ガラス、
ソーダガラス、結晶化ガラス、セラミックス等を単独で
又は組合わせて用いることができる。又、接合する部材
間に印加する直流電圧は部材によっても異なるか゛約５
００ｖ〜１５００Ｖである。Here, the first member includes silicon, germanium, Ga.
Semiconductors or metals such as AS can be mentioned, and second
The member and the third member may be made of any material that exhibits conductivity when heated, such as small silicate glass such as Pyrex glass,
Soda glass, crystallized glass, ceramics, etc. can be used alone or in combination. Also, the DC voltage applied between the members to be joined varies depending on the member, or is approximately 5.
00v to 1500V.
（作用） 第２図は本発明の詳細な説明するための構成図である。(effect) FIG. 2 is a block diagram for explaining the present invention in detail.
第２図に示すように２枚のパイレックスガラス２００（
第２部材） 、３００ （第３部材）間にシリコン１０
０が挟まれている。又、２枚のパイレックスガラス、シ
リコン、直流電源を結ぶ、直列閉回路を形成し、電流計
を直列に介挿して、８００Ｖの直流電圧を３５０℃±５
℃加熱下において印加している。As shown in Figure 2, two pieces of Pyrex glass 200 (
silicon 10 between (second member) and 300 (third member)
0 is inserted. In addition, a series closed circuit was formed by connecting two pieces of Pyrex glass, silicon, and a DC power supply, and an ammeter was inserted in series to generate a DC voltage of 800V at 350℃±5.
It is applied under heating at ℃.
第３図は、パイレックスガラス２００を陽極側に、パイ
レックスガラス３００を陰極側に接続した場合の電流計
の示す接合電流値を承り。第３図に示すように時間を追
って接合電流は減少し、パイレックスガラス３００．シ
リコン１００間の接合面にＳ ｉＱｚ被膜を形成して陽
極接合がなされる。尚、パイレックスガラス２００、シ
リコン１００間は接合されず、パイレックスガラス２０
０は単なる導体として働く。FIG. 3 shows the junction current value indicated by the ammeter when Pyrex glass 200 is connected to the anode side and Pyrex glass 300 is connected to the cathode side. As shown in FIG. 3, the junction current decreases over time, and the Pyrex glass 300. An SiQz film is formed on the bonding surface between the silicon layers 100 and anodic bonding is performed. Note that Pyrex glass 200 and silicon 100 are not bonded, and Pyrex glass 20
0 acts simply as a conductor.
第４図はパイレックスガラス３００を陽極側に、パイレ
ックスガラス２００を陰極側に接続し、直流電圧を印加
した場合の接合電流舶を示−４ｏ第３図に示１ように、
かかる場合にｒ：）、１８合電流は流れ、パイレックス
ガラス２００、シリコン１００間の接合面はＦａ極接合
される。Figure 4 shows the junction current when Pyrex glass 300 is connected to the anode side, Pyrex glass 200 is connected to the cathode side, and a DC voltage is applied, as shown in Figure 3.
In such a case, a current r:)18 flows, and the bonding surface between the Pyrex glass 200 and the silicon 100 is bonded to the Fa electrode.
（実施例）
以下、本発明の１実施例を図を参照しつつ説明する。本
発明は絶対圧を測定づる半導体圧力セン＝ ７ −
ザを陽極接合により製造する場合であり、第１部月とし
ては、シリコン感圧素子１０が、第２部材としてはパイ
レックスガラス製置ル２０が、第３部材としては、パイ
レックスガラス製キャップ３０が各々対応する。(Example) Hereinafter, one example of the present invention will be described with reference to the drawings. In the present invention, a semiconductor pressure sensor for measuring absolute pressure is manufactured by anodic bonding, and the first part is a silicon pressure sensitive element 10, and the second part is a Pyrex glass mounting plate 20. However, the third member corresponds to each cap 30 made of Pyrex glass.
（第１実施例）
第１図は、第１実施例に係る陽極接続方法の実施を示す
構成図である。(First Example) FIG. 1 is a configuration diagram showing implementation of the anode connection method according to the first example.
第１図に示すようにシリコン感圧素子１０は、接合面１
２において、パイレックスガラス製台座２０と当接し、
かつ接合面１３においてパイレックスガラス製キャップ
３０に当接している。ここで、シリコン感圧素子１０は
、中央部１５に薄肉のダイアフラムが形成され、該ダイ
アフラム上には複数のピエゾ抵抗歪ゲージが形成されて
いる。As shown in FIG. 1, the silicon pressure sensitive element 10 has a bonding surface 1
2, comes into contact with the Pyrex glass pedestal 20,
Moreover, the bonding surface 13 is in contact with the Pyrex glass cap 30 . Here, the silicon pressure sensitive element 10 has a thin diaphragm formed in the central portion 15, and a plurality of piezoresistive strain gauges are formed on the diaphragm.
又、台座２０の中央部には圧力導入孔２５が設けられて
いる。一方、キャップ３０は、中空構造であり、基準室
３５を有している。これらの部材を真空中で陽極接合す
ることにより、真空の基準室３５を有する絶対型圧力測
定半導体センサを製造しようとするものである。Further, a pressure introduction hole 25 is provided in the center of the pedestal 20. On the other hand, the cap 30 has a hollow structure and includes a reference chamber 35. By anodic bonding these members in a vacuum, an absolute type pressure measuring semiconductor sensor having a vacuum reference chamber 35 is manufactured.
以下、製造１稈を順次述べる。Below, one culm produced will be described in order.
まず、台座２０の接合面１２の反対側の而２２に第２電
極板５６、又、キャップ３０の接合面１３の反対側の面
３３に第１電極板５５を密着、接続した。次に、各部材
を真空中で３５０℃に加熱しながら、第１工程として、
第１電極板５５を陽極として、第２電極板５６を陰極と
して、直流電源７０により、約５ｏｏｖの直流電圧を印
加した。First, the second electrode plate 56 was attached to the base 20 on the side opposite to the joint surface 12, and the first electrode plate 55 was closely connected to the surface 33 of the cap 30 on the opposite side to the joint surface 13. Next, as a first step, while heating each member to 350 ° C. in vacuum,
A DC voltage of about 5 oov was applied by a DC power supply 70 using the first electrode plate 55 as an anode and the second electrode plate 56 as a cathode.
このときキャップ３０は、単なる導体として働き、シリ
コン感圧素子１０と台座２０との接合面１２には接合電
流が流れて５ｉＯｚが生成し、接合が完了する。At this time, the cap 30 functions simply as a conductor, and a bonding current flows through the bonding surface 12 between the silicon pressure-sensitive element 10 and the pedestal 20 to generate 5 iOz, and the bonding is completed.
次に、切換装置８０により、第１電極板５５及び第２電
極板５６の極性を切換えて各部材を真空中で３５０℃に
加熱しながら、約８００Ｖの直流電圧を印加した。これ
は、接合が完了した接合面１２に、接合の際に印加され
た電圧と逆方向電圧を印加することによって、電流が流
れることを本発明者が知見したことに基づくものである
。即ち、この場合、台座２０は単なる導体として働き、
シリコン感圧素子１０と、キャップ３０は、接合面１３
において陽極接合される。Next, the polarity of the first electrode plate 55 and the second electrode plate 56 was switched using the switching device 80, and while each member was heated to 350° C. in vacuum, a DC voltage of about 800 V was applied. This is based on the inventor's finding that current flows by applying a voltage in the opposite direction to the voltage applied during bonding to the bonded surface 12 after bonding is completed. That is, in this case, the pedestal 20 acts as a mere conductor,
The silicon pressure sensitive element 10 and the cap 30 have a bonding surface 13
Anodic bonding is performed.
（第２実施例）
上記第１実施例においては、第１部材であるシリコン感
圧素子１０及び第２部材である台９２０、及び第３部材
であるキャップ３ｏを各々接合面１２．１３において当
接した後、直流電圧を印加した。しかし、次のような工
程で３つの部材を陽極接合してもよい。即ち、第１工程
において、シリコン感圧素子１０と台座２０のみを当接
し、第１電極板５５を陽極としてシリコン感圧素子１０
に接続し、第２電極板５６を陰極として台座２０に接続
して所定直流電圧を印加し、シリコン感圧素子１０と台
座２０を接合する。次に、第２工程において、キャップ
３０をシリコン感圧素子１０に当接し、第１電極板５５
を陰極としてキャップ３０に接続し、第２電極板５６を
陽極として台座２０に接続して所定直流電圧を印加し、
キャップ３０とシリコン感圧素子２０とを陽極接続する
。(Second Embodiment) In the first embodiment described above, the silicon pressure-sensitive element 10 as the first member, the pedestal 920 as the second member, and the cap 3o as the third member are attached to each other at the joint surface 12.13. After making contact, a DC voltage was applied. However, the three members may be anodically bonded in the following steps. That is, in the first step, only the silicon pressure sensitive element 10 and the pedestal 20 are brought into contact with each other, and the silicon pressure sensitive element 10 is brought into contact with the first electrode plate 55 as an anode.
is connected to the pedestal 20 using the second electrode plate 56 as a cathode, and a predetermined DC voltage is applied to bond the silicon pressure-sensitive element 10 and the pedestal 20. Next, in a second step, the cap 30 is brought into contact with the silicon pressure sensitive element 10, and the first electrode plate 55
is connected to the cap 30 as a cathode, the second electrode plate 56 is connected to the pedestal 20 as an anode, and a predetermined DC voltage is applied.
The cap 30 and the silicon pressure sensitive element 20 are anodically connected.
［発明の効果］
以上、述べたように本発明によれば、第１部材の第１接
合面に第２部材を、第１部材の第２接合面に第３部材を
陽極接合する場合におい−Ｃも、第１部材に直流電圧を
印加するためのＮ４４ｉを取りつける必要がなく、陽極
接合の便宜のために第１部材の大きさを考慮する必要は
なくなる。このため、第１部材、第２部材、第３部材と
も、非常にコンパクトにプることが可能である。又、第
１部材からの電極の取り出しが不必髪なため、従来、電
極が第１部材に点接触しでいために生ずる接合部におけ
る接合電流の部分的不拘＝−が解滌され、均一な接合が
可能となる。[Effects of the Invention] As described above, according to the present invention, when the second member is anodically bonded to the first bonding surface of the first member and the third member is anodically bonded to the second bonding surface of the first member, C also eliminates the need to attach N44i for applying a DC voltage to the first member, and there is no need to consider the size of the first member for convenience of anodic bonding. Therefore, it is possible to make the first member, the second member, and the third member extremely compact. Furthermore, since it is unavoidable to take out the electrode from the first member, the partial unrestriction of the welding current at the joint, which conventionally occurs when the electrode fails to make point contact with the first member, is eliminated, and uniform welding is achieved. becomes possible.
第１図は第１実施例に係る陽極接合方法の実施を示す構
成図である。
第２図は本発明の詳細な説明するための構成図である。
第３図、第４図はシリコン１００及びパイレックスガラ
ス２００．３００に流れる接合電流の値第５図は従来の
陽極接合方法により、シリコン感圧素子１０にパイレッ
クスガラスよりなる台座２０及びキャップ３０を接合す
る１例を示す構成図である。
１０・・・シリコン感圧素子FIG. 1 is a configuration diagram showing implementation of the anodic bonding method according to the first embodiment. FIG. 2 is a block diagram for explaining the present invention in detail. Figures 3 and 4 show the values of the junction current flowing through silicon 100 and Pyrex glass 200. Figure 5 shows the bonding of the pedestal 20 and cap 30 made of Pyrex glass to the silicon pressure-sensitive element 10 by a conventional anodic bonding method. FIG. 10... Silicon pressure sensitive element
Claims (5)
面にガラス等の第２部材を当接し、該第１部材を直流電
源の陽極に、該第２部材を直流電源の陰極に接続して、
該第１部材と該第２部材とを陽極接合する第１工程と、 該第１部材の第２接合面に当接されたガラス等の第３部
材を直流電源の陰極に接続し、前記第２部材を直流電源
の陽極に接続して、該第２部材から該第１部材を通じて
該第３部材に電流を通電して、該第１部材と該第３部材
とを陽極接合する第２工程とよりなることを特徴とする
陽極接合方法。(1) A second member such as glass is brought into contact with at least a first bonding surface of a first member such as a semiconductor chip, and the first member is connected to an anode of a DC power source and the second member is connected to a cathode of a DC power source. hand,
a first step of anodic bonding the first member and the second member; connecting a third member such as glass that is in contact with the second bonding surface of the first member to a cathode of a DC power source; a second step of anodic bonding the first member and the third member by connecting the two members to the anode of a DC power supply and passing current from the second member through the first member to the third member; An anodic bonding method characterized by:
２接合面に該第３部材を当接し、かつ該第２部材および
該第３部材に第１電極部材および第２電極部材をそれぞ
れ当接させ、該第１部材と該第２部材の陽極接合は該第
２電極部を直流電源の陽極に該第１電極を直流電源の陰
極に接続して行ない、前記第２工程において、該第１部
材と該第３部材との陽極接合は、該第２電極部を直流電
源の陰極に該第１電極部を直流電源の陽極に接続して行
なう特許請求の範囲第１項記載の陽極接合方法。(2) In the first step, the third member is simultaneously brought into contact with the second bonding surface of the first member, and the first electrode member and the second electrode member are attached to the second member and the third member. anodic bonding of the first member and the second member is performed by connecting the second electrode portion to the anode of a DC power supply and the first electrode to the cathode of the DC power supply, and in the second step, The anodic bonding between the first member and the third member is performed by connecting the second electrode portion to the cathode of a DC power source and the first electrode portion to the anode of the DC power source. Anodic bonding method.
熱下において行われる特許請求の範囲第１項記載の陽極
接合方法。(3) The anodic bonding method according to claim 1, wherein the anodic bonding in the first step and the second step is performed under heating.
第２部材及び前記第３部材は台座である特許請求の範囲
第１項記載の陽極接合方法。(4) The anodic bonding method according to claim 1, wherein the first member is a silicon strain detection element, and the second member and the third member are pedestals.
記第２部材は台座であり、前記第３部材はキャップであ
る特許請求の範囲第１項記載の陽極接合方法。(5) The anodic bonding method according to claim 1, wherein the first member is a silicon strain detection element, the second member is a pedestal, and the third member is a cap.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18251586A JPH07105505B2 (en) | 1986-08-01 | 1986-08-01 | Anodic bonding method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18251586A JPH07105505B2 (en) | 1986-08-01 | 1986-08-01 | Anodic bonding method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6338265A true JPS6338265A (en) | 1988-02-18 |
| JPH07105505B2 JPH07105505B2 (en) | 1995-11-13 |
Family
ID=16119646
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18251586A Expired - Lifetime JPH07105505B2 (en) | 1986-08-01 | 1986-08-01 | Anodic bonding method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH07105505B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0678630A (en) * | 1991-07-12 | 1994-03-22 | Hokuto Sangyo Kk | Hollow multi-layer panel and greenhouse using the same |
| KR100490756B1 (en) * | 2003-06-10 | 2005-05-24 | 전자부품연구원 | Anodic bonding Method using cap |
| JP2010143792A (en) * | 2008-12-19 | 2010-07-01 | Pioneer Electronic Corp | Method for bonding substrate and mems device |
-
1986
- 1986-08-01 JP JP18251586A patent/JPH07105505B2/en not_active Expired - Lifetime
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0678630A (en) * | 1991-07-12 | 1994-03-22 | Hokuto Sangyo Kk | Hollow multi-layer panel and greenhouse using the same |
| KR100490756B1 (en) * | 2003-06-10 | 2005-05-24 | 전자부품연구원 | Anodic bonding Method using cap |
| JP2010143792A (en) * | 2008-12-19 | 2010-07-01 | Pioneer Electronic Corp | Method for bonding substrate and mems device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH07105505B2 (en) | 1995-11-13 |
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