JPS6312861U - - Google Patents

Info

Publication number
JPS6312861U
JPS6312861U JP10491286U JP10491286U JPS6312861U JP S6312861 U JPS6312861 U JP S6312861U JP 10491286 U JP10491286 U JP 10491286U JP 10491286 U JP10491286 U JP 10491286U JP S6312861 U JPS6312861 U JP S6312861U
Authority
JP
Japan
Prior art keywords
region
source
type
impurity concentration
high impurity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10491286U
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP10491286U priority Critical patent/JPS6312861U/ja
Publication of JPS6312861U publication Critical patent/JPS6312861U/ja
Pending legal-status Critical Current

Links

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Description

【図面の簡単な説明】
第１図はこの考案に係る電界効果トランジスタ
の一実施例を示す縦断面図、第２図は同上一実施
例の平面図、第３図はこの考案の他の実施例を示
す平面図、第４図は従来の電界効果トランジスタ
の縦断面図、第５図は同上従来例の平面図である
。 ２：ｐ形ウエル領域（ｐ形の基板領域）、４，
４ａ〜４ｄ：ソース領域、５，５ａ〜５ｅ：ｐ形
の高不純物濃度領域、６：ソースコンタクトホー
ル、８：ドレイン領域、９：チヤネル領域、１１
：ゲート絶縁膜、１２：ゲート電極、１４：ソー
ス電極。

Claims (1)

  1. 【実用新案登録請求の範囲】 ｐ形の基板領域の表面部にｎ形のソース領域お
    よびドレイン領域を離隔して形成し、ソース・ド
    レイン領域間における基板領域上にゲート絶縁膜
    を介してゲート電極を形成し、前記ソース領域に
    はソース電極を接続した電界効果トランジスタに
    おいて、 前記ソース領域に隣接する位置に基板領域と接
    するｐ形の高不純物濃度領域を形成し、該ｐ形の
    高不純物濃度領域を前記ソース電極に接続したこ
    とを特徴とする電界効果トランジスタ。
JP10491286U 1986-07-10 1986-07-10 Pending JPS6312861U (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10491286U JPS6312861U (ja) 1986-07-10 1986-07-10

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10491286U JPS6312861U (ja) 1986-07-10 1986-07-10

Publications (1)

Publication Number Publication Date
JPS6312861U true JPS6312861U (ja) 1988-01-27

Family

ID=30978845

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10491286U Pending JPS6312861U (ja) 1986-07-10 1986-07-10

Country Status (1)

Country Link
JP (1) JPS6312861U (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005024931A1 (ja) * 2003-09-05 2005-03-17 Renesas Technology Corp. 半導体装置およびその製造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5232281A (en) * 1975-09-04 1977-03-11 Westinghouse Electric Corp Mosfet transistor

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5232281A (en) * 1975-09-04 1977-03-11 Westinghouse Electric Corp Mosfet transistor

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005024931A1 (ja) * 2003-09-05 2005-03-17 Renesas Technology Corp. 半導体装置およびその製造方法
JPWO2005024931A1 (ja) * 2003-09-05 2006-11-16 株式会社ルネサステクノロジ 半導体装置およびその製造方法
JP4624924B2 (ja) * 2003-09-05 2011-02-02 ルネサスエレクトロニクス株式会社 半導体装置

Similar Documents

Publication Publication Date Title
JPS63188964U (ja)
JPS62196360U (ja)
JPS6312861U (ja)
JPS63124762U (ja)
JPH03120054U (ja)
JPH0377463U (ja)
JPS59119045U (ja) 高出力高周波トランジスタ
JPS6197860U (ja)
JPH0158960U (ja)
JPS62151769U (ja)
JPH0396052U (ja)
JPH0241456U (ja)
JPS61173148U (ja)
JPS64346U (ja)
JPH0342124U (ja)
JPS63174464U (ja)
JPS6397252U (ja)
JPS6343456U (ja)
JPH01127261U (ja)
JPH0176067U (ja)
JPS62196359U (ja)
JPH0180959U (ja)
JPH0397945U (ja)
JPH02136340U (ja)
JPS6312865U (ja)