JPS62193202A - Voltage nonlinear device - Google Patents
Voltage nonlinear deviceInfo
- Publication number
- JPS62193202A JPS62193202A JP61035901A JP3590186A JPS62193202A JP S62193202 A JPS62193202 A JP S62193202A JP 61035901 A JP61035901 A JP 61035901A JP 3590186 A JP3590186 A JP 3590186A JP S62193202 A JPS62193202 A JP S62193202A
- Authority
- JP
- Japan
- Prior art keywords
- voltage
- fine powder
- zno
- varistor
- voltage nonlinear
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000843 powder Substances 0.000 claims description 30
- 239000011230 binding agent Substances 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 11
- 239000004065 semiconductor Substances 0.000 claims description 10
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 229910044991 metal oxide Inorganic materials 0.000 claims description 3
- 150000004706 metal oxides Chemical class 0.000 claims description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 53
- 239000011787 zinc oxide Substances 0.000 description 26
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 12
- 239000011521 glass Substances 0.000 description 7
- 239000000126 substance Substances 0.000 description 7
- 239000000758 substrate Substances 0.000 description 7
- 229910052709 silver Inorganic materials 0.000 description 6
- 239000004332 silver Substances 0.000 description 6
- 239000004020 conductor Substances 0.000 description 5
- 239000002245 particle Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 239000004973 liquid crystal related substance Substances 0.000 description 4
- 239000010946 fine silver Substances 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- 239000009719 polyimide resin Substances 0.000 description 3
- 238000010304 firing Methods 0.000 description 2
- AMWRITDGCCNYAT-UHFFFAOYSA-L hydroxy(oxo)manganese;manganese Chemical compound [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 239000003973 paint Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 230000000087 stabilizing effect Effects 0.000 description 2
- 239000004641 Diallyl-phthalate Substances 0.000 description 1
- 239000004640 Melamine resin Substances 0.000 description 1
- 229920000877 Melamine resin Polymers 0.000 description 1
- 229920001807 Urea-formaldehyde Polymers 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 229910000410 antimony oxide Inorganic materials 0.000 description 1
- QUDWYFHPNIMBFC-UHFFFAOYSA-N bis(prop-2-enyl) benzene-1,2-dicarboxylate Chemical compound C=CCOC(=O)C1=CC=CC=C1C(=O)OCC=C QUDWYFHPNIMBFC-UHFFFAOYSA-N 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- 229910000417 bismuth pentoxide Inorganic materials 0.000 description 1
- 239000007767 bonding agent Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910000428 cobalt oxide Inorganic materials 0.000 description 1
- IVMYJDGYRUAWML-UHFFFAOYSA-N cobalt(ii) oxide Chemical compound [Co]=O IVMYJDGYRUAWML-UHFFFAOYSA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- -1 corMn Chemical class 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000007849 furan resin Substances 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000011572 manganese Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 239000004570 mortar (masonry) Substances 0.000 description 1
- VTRUBDSFZJNXHI-UHFFFAOYSA-N oxoantimony Chemical compound [Sb]=O VTRUBDSFZJNXHI-UHFFFAOYSA-N 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920005749 polyurethane resin Polymers 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
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- 239000004575 stone Substances 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 229920006337 unsaturated polyester resin Polymers 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Landscapes
- Thermistors And Varistors (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
産業上の利用分野
本発明は印加１程圧によって抵抗値が変化する電圧非直
線性素子に関するもので、電圧安定化、異常電圧制御、
さらにはマトリックス運動の液晶。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a voltage nonlinear element whose resistance value changes depending on an applied pressure, and is used for voltage stabilization, abnormal voltage control,
Furthermore, there is a matrix motion liquid crystal.
ＥＬなとの表示デバイスのスイッチング素子などに利用
さｎるものである。It is used in switching elements of display devices such as EL.
従来の技術
従来の電圧非直線性素子は、酸化亜鉛（ＺｎＯ）に酸化
ビス７ ス（Ｂｉ、、０５） 、 酸化コバルト（Ｇａ
２Ｏ，）。Conventional technology Conventional voltage nonlinear elements are made of zinc oxide (ZnO), bis oxide (Bi, 05), cobalt oxide (Ga), etc.
2O,).
酸化マンガン（”０２ ） 、酸化アンチモン（ｓｂ、
、ｏ、）などの酸化物を添加して、１０００’Ｃ〜１３
６゜°Ｃで焼結したＺｎＯバリスタなど、種々のものが
ある。その中で、 ＺｎＯバリスタは電圧非直線指数α
、サージ耐量が大きいことから、最も一般的に使われて
いる。（特公昭４６−１９４７２号公報参照）発明が解
決しようとする問題点
このような従来の電圧非直線性素子は、 ＺｎＯバリス
タを初めとして、素子厚みを薄く（数十μｍ以下）する
ことに限界があるため、バリスタ電圧（バリスタに電流
１ｍＡを流した時の電圧ｖ＋ｆｌｌＡで表される）を低
くすることに限界があり、低電圧用の保護素子や低い電
圧における電圧安定化素子として使えないものであった
。また、上述したように１ｏ００”Ｃ以上の高温プロセ
スを必要とするため、ガラス基板上あるいは回路基板上
に電圧非直線性素子を直接形成できないという問題があ
った。さらに、従来のものは並列静電容叶が大きく、例
えば液晶などのスイッチング素子としては不適当なもの
であるなどの問題点を有していた。Manganese oxide (”02), antimony oxide (sb,
, o, ) etc. to 1000'C~13
There are various types such as ZnO varistors sintered at 6°C. Among them, the ZnO varistor has a voltage nonlinearity index α
, is the most commonly used because of its high surge resistance. (Refer to Japanese Patent Publication No. 46-19472) Problems to be Solved by the Invention Such conventional voltage nonlinear elements, including ZnO varistors, have limitations in making the element thickness thin (several tens of μm or less). Therefore, there is a limit to lowering the varistor voltage (represented by the voltage v + fllA when a current of 1 mA flows through the varistor), and it cannot be used as a protection element for low voltages or a voltage stabilizing element at low voltages. Met. Furthermore, as mentioned above, since a high-temperature process of 1o00"C or higher is required, there is a problem that a voltage nonlinear element cannot be directly formed on a glass substrate or a circuit board. Furthermore, the conventional method The problem is that the capacitance is large, making it unsuitable for use as a switching element for liquid crystals, for example.
問題点を解決するための手段
この問題点を解決するために本発明は、微粉末電極を備
えてなるものである。Means for Solving the Problem In order to solve this problem, the present invention includes a fine powder electrode.
作用
この構成によれ、ば、低電流域においても電圧非直線指
数αの大きなものが得られ、また微粉末状の導電性物質
を介在させていることによって、微粉末状の半導体物質
間の電気的接続を安定にし、特性のバラツキの少ない素
子が得られ、かつこの導電性物質の介在量によってバリ
スタ電圧を制御することもできることとなるため、電極
間距離に制約されることなく、たとえば電極間距離を上
記のように数十μｍ以下に極端に狭くして素子を形成し
なくても、抵電圧化に適した素子がきわめて容易に得ら
れることとなる。そして、結合剤で固めて素子形成を行
う際に高温プロセス全必要とすることなく作ることがで
きるため、回路基板上に素子を直接形成することができ
、 ＺｎＯバリスタなどでは考えられない幅広い用途が
期待できるものである。さらに、微粉末状の半導体物質
を固めたものであるため、それぞれの半導体物質の間は
微粉末状の導７１Ｌ性物質が介在されているものの、接
触面積が基本的に小さいことから並列静電容量の小さな
ものが得られ、液晶などのデバイスのスイッチング素子
として最適な素子が提供できることとなる。Effects With this configuration, a large voltage nonlinearity index α can be obtained even in a low current range, and by interposing a finely powdered conductive material, electricity between finely powdered semiconductor materials can be reduced. It is possible to obtain a device with stable electrical connection and less variation in characteristics, and it is also possible to control the varistor voltage depending on the amount of intervening conductive material, without being constrained by the distance between the electrodes. Even without forming an element with an extremely narrow distance of several tens of micrometers or less as described above, an element suitable for increasing the resistance voltage can be obtained very easily. In addition, since it can be made without requiring a high-temperature process when solidifying it with a binder and forming the device, the device can be formed directly on the circuit board, and it has a wide range of applications that cannot be imagined with ZnO varistors. This is something to look forward to. Furthermore, since it is made by solidifying fine powder semiconductor materials, although fine powder conductive materials are interposed between each semiconductor material, the contact area is basically small, so parallel electrostatic A device with a small capacitance can be obtained, making it possible to provide an element that is optimal as a switching element for devices such as liquid crystals.
実施例
以下、本発明を実施例にもとづいて詳細に説明する。ま
ず、粒子径が０．０５〜１１１ｍの微粒子状の酸化亜鉛
を７００〜１３００°Ｃで焼成した後、その焼結された
ＺｎＯを０．６〜６０μｍの粒子径（平均粒子径１〜１
０μｍ ）に粉砕し、そのＺｎＯ微粉末にＢｉ、、Ｏ，
を０．０５〜１０ ｍｏ１％添加し、６ｏｏ〜１３６ｏ
″Ｃで１０〜６ｏ分間、Ｍ処ｆｆＬ、そのＺｎＯ微粉末
表面にＢｉ２Ｏ５絶縁被膜を形成した。EXAMPLES Hereinafter, the present invention will be explained in detail based on examples. First, fine particulate zinc oxide with a particle size of 0.05 to 111 m is fired at 700 to 1300°C, and then the sintered ZnO is heated to a particle size of 0.6 to 60 μm (average particle size of 1 to 1
0μm), and the ZnO fine powder was mixed with Bi, O,
Add 0.05 to 10 mo1% of 6oo to 136o
A Bi2O5 insulating film was formed on the surface of the ZnO fine powder by M treatment ffL for 10 to 60 minutes at "C".
ここで、微粉末状のＺｎＯの表面にはＢｉ２Ｏ，絶縁被
膜がほぼ数十〜数百への厚さで薄く形成されていること
が認められた。次いで、このようにして作成したＢｉ２
Ｏ３絶縁被膜が表面についたＺｎＯ微粉末群は弱い力で
互いに接着しているので、ｃ′！１．を乳鉢あるいはポ
ット、ミルでほぐし、微粉末状とした。Here, it was observed that a thin insulating film of Bi2O was formed on the surface of the finely powdered ZnO with a thickness of approximately several tens to several hundreds. Next, Bi2 created in this way
Since the ZnO fine powder group with the O3 insulating film on the surface adheres to each other with a weak force, c'! 1. was ground in a mortar, pot, or mill to form a fine powder.
次に、上記のようにして得られたＢｉ２Ｏ，絶縁被膜が
表面に形成された微粉末状のＺｎＯに、微粉末状の導電
性物質として銀粉末と、それら微粉末間の機械的結合を
図る絶縁性の結合剤（バインダー）としてポリイミド樹
脂を添加し、混合した。ここで、結合剤としてはポリイ
ミド樹脂の固形分が溶削（例えばｎ−メチル−２−ポロ
リドン）に対シてｓｗｔ％となるように薄めたものとし
、それをＺｎＯ微粉末と銀粉末との合計分に対して例え
ば等重量で混合し、ペイント状とした。次いで、上記の
ようにして得られたペイントを第２図に示すようにＩＴ
Ｏ（インジウム・スズ酸化物）電極１の設けられたガラ
ス基板３上に例えばスクリーン印刷で塗布し、その上に
同じ（ＩＴＯ電極２の設けられたガラス基板４を載置し
、２８０〜４００°Ｃで３０分間、大気中で硬化させ、
電極１，２間に電圧非直線性素子５を設けた。第１図は
、電圧非直線性素子６の拡大断面図であり、６はＺｎＯ
微粉末、７は微粉末状の導電性物質としての銀微粉末で
、ＺｎＯ微粉末６問およびそのＺｎＯ微粉末らと電極１
，２との間の電気的接続を良好にしている。Next, Bi2O obtained as described above and fine powder ZnO with an insulating film formed on the surface are coated with silver powder as a fine powder conductive substance, and mechanical bonding between the fine powders is attempted. A polyimide resin was added as an insulating binder and mixed. Here, as a binder, the solid content of the polyimide resin is diluted to swt% with respect to the melting material (for example, n-methyl-2-porolidone), and this is used as a binder between the ZnO fine powder and the silver powder. For example, they were mixed in an equal weight to the total amount to form a paint. Next, the paint obtained as described above is subjected to IT treatment as shown in FIG.
It is coated on a glass substrate 3 provided with an O (indium tin oxide) electrode 1 by, for example, screen printing, and a glass substrate 4 provided with the same (ITO electrode 2) is placed on top of it. Cure in air for 30 minutes,
A voltage nonlinear element 5 was provided between the electrodes 1 and 2. FIG. 1 is an enlarged sectional view of the voltage nonlinear element 6, where 6 is a ZnO
Fine powder, 7 is silver fine powder as a fine powder conductive substance, ZnO fine powder 6 questions and the ZnO fine powder and electrode 1
, 2 to ensure good electrical connection.
８はこれら微粉末６，７間を機械的に結合している絶縁
性の結合剤であり、この結合剤８でもって微粉末６，７
は互いに固められている。９（はＺｎＯ微粉末６の表面
に施されたＢｉ２Ｏ，に！２ｆ＆被膜である。8 is an insulating binder that mechanically connects these fine powders 6 and 7, and this binder 8 allows the fine powders 6 and 7 to
are solidified together. 9( is a Bi2O,!2f& coating applied to the surface of ZnO fine powder 6.
第３図はＩＴＯ電極１ａ、１ｂが設けられたガラス基板
３ａ上に電圧非直線性素子５を構成した場合を示してい
る。FIG. 3 shows a case where a voltage nonlinear element 5 is constructed on a glass substrate 3a provided with ITO electrodes 1a and 1b.
次に、上記のようにして作成された電圧非直線性素子の
電圧−電流特性について説明する。１ず、第４図は第２
図の構成における電圧−電流特性を従来のＺｎＯバリス
タのそれと比較して示している。Next, the voltage-current characteristics of the voltage nonlinear element created as described above will be explained. 1. Figure 4 is Figure 2.
The voltage-current characteristics of the configuration shown in the figure are compared with those of a conventional ZnO varistor.
本発明の素子は、まず酸化亜鉛を７０ｏ ”Ｃで焼成し
、これにＢｉ、、０３を０．５ｍｏ１％添加（７たもの
を９００″Ｃ，６０分間熱処理した後、この平均粒子径
３〜５μｍＱＺｎｏ微粉末と銀微粉末（平均粒子径３７
７ｍ）との合計分（銀微粉末は全体の２０ｗｔ％）をて
等重量の結合剤をいれ混合し、たもの（・でおいて、素
子面積を１ｍＭ、電極間距離を３ｏｌ）ｍとした場合に
おける特性を示している。さて、電圧非直線性素子の電
圧−電流特性は、よく知られているように近似的に次式
で示されている。The device of the present invention is made by first firing zinc oxide at 70°C, adding 0.5mol1% of Bi,03 to it (after heat-treating it at 900°C for 60 minutes, the average particle diameter of 5 μm QZno fine powder and silver fine powder (average particle size 37
7 m) (silver fine powder is 20 wt% of the total) and mixed with an equal weight of binder, making the element area 1 mm and the distance between electrodes 3 ol. It shows the characteristics of the case. Now, as is well known, the voltage-current characteristics of a voltage nonlinear element are approximately expressed by the following equation.
１：ＫＶ“
ここで、Ｉは素子に流れる電流、Ｖは素子の電極間の電
圧、Ｋは固有抵抗の抵抗値に相当する定数、αは上述し
た電圧非直線特性の指数を示しており、この電圧非直線
指数αは大きい程、電圧非直線性が優れていることにな
る。1:KV" Here, I is the current flowing through the element, V is the voltage between the electrodes of the element, K is a constant corresponding to the resistance value of the specific resistance, and α is the exponent of the voltage nonlinear characteristic mentioned above, The larger the voltage nonlinearity index α, the better the voltage nonlinearity.
第４図の特性に示されるように、特性Ｂで示される従来
のＺｎＯバリスタは低電流域において電圧非直線指数α
が小さく、１０ Å以下の電流では良好な電圧非直線性
素子としての機能を発揮し得ない。一方、特性ムで示さ
れる本発明の素子では低電流域においても電圧非直線指
数αが犬きく、１０ １程度の電流域でも十分に電圧非
直線性素子としての機能を発揮することができることを
示している。また、通常、 ＺｎＯバリスタにおいて
はバリスタ特性を表わすのに、例えば素子に１ｍムの電
流を流した時の電極間に現れる電圧をバリスタ電圧ｖ１
ｍＡと呼び、このバリスタ電圧ｖ＋ｍＡ と上記電圧
非直線指数αとを使用している。本発明の素子では、上
述したように、低電流域においても電圧非直線指数αが
犬きく、バリスタ電圧を第４図に示すように例えばｖ、
ｌＩＡで表わすことができる。As shown in the characteristics in Figure 4, the conventional ZnO varistor shown by characteristic B has a voltage nonlinearity index α in the low current region.
is small, and cannot function as a good voltage nonlinear element at a current of 10 Å or less. On the other hand, the voltage nonlinearity index α of the device of the present invention shown in the characteristic curve is very high even in the low current range, and it can sufficiently function as a voltage nonlinear device even in the current range of about 10 1. It shows. Furthermore, in order to express the varistor characteristics of a ZnO varistor, for example, the voltage that appears between the electrodes when a current of 1 mm is passed through the element is expressed as the varistor voltage v1.
mA, and this varistor voltage v+mA and the voltage non-linearity index α are used. In the device of the present invention, as described above, the voltage nonlinearity index α is large even in the low current range, and the varistor voltage is changed to v, for example, as shown in FIG.
It can be expressed as lIA.
このように本発明において、バリスタ電圧を抵いものと
することができるのは、銀微粉末を素子内に分散させて
いるため、これが゛電気的短絡路を作ることになり、実
質的に電極間距離が短くなったことに相当する、いわゆ
る橋渡しの効果（電気的なバイパス効果）をしているた
めである。従って、導電性物質を適当な量で添加すれば
、電極間距離に制約されることなく、たとえば、電極間
距離を極度に狭くしないでも素子を形成することができ
る。In this way, in the present invention, the reason why the varistor voltage can be reduced is because fine silver powder is dispersed within the element, which creates an electrical short-circuit path, and substantially reduces the voltage between the electrodes. This is because there is a so-called bridging effect (electrical bypass effect), which corresponds to a shortening of the distance between the two. Therefore, by adding an appropriate amount of a conductive substance, an element can be formed without being restricted by the distance between the electrodes, for example, without making the distance between the electrodes extremely narrow.
また、本発明素子において低電流域でも電圧非直線指数
αが大きい理由は、現在のところ理由は明確とはなって
いないが、微粉末状の半導体物質（ＺｎＯ）を絶縁性の
結合剤でもって固めたものであるため、それぞれの半導
体物質の間は点接触となり、接触面積が小さいこと、ま
た結合剤が絶縁性のため、漏れ電流が小さくなっている
ことによるものと考えられる。Furthermore, although the reason why the voltage nonlinearity index α is large even in the low current range in the device of the present invention is not clear at present, it is possible to This is thought to be due to the fact that since it is solidified, there is point contact between the respective semiconductor materials, so the contact area is small, and the bonding agent is insulating, so leakage current is small.
第５図は本発明において、微粉末状の導電性物質として
の銀粉末の添加量を変えた場合のバリスタ電圧Ｖ、、、
ムの変化する様子を示している。ここで、酸化亜鉛の焼
成温度など、その他の条件は第４図の場合の条件と同一
とした。第６図に示されるように、本発明素子において
は並列静電容量が従来のＺｎＯバリスタが１０ｏＯ〜２
０ｏＯｏＰＦであるのに対して非常に小さいものとなっ
ている。Figure 5 shows the varistor voltage V when the amount of silver powder added as a fine powder conductive material is changed in the present invention.
It shows how the system changes. Here, other conditions such as the firing temperature of zinc oxide were the same as those in the case of FIG. 4. As shown in FIG. 6, in the device of the present invention, the parallel capacitance of the conventional ZnO varistor is 10 to 2
It is very small compared to 0oOoPF.
この並列静電容量が本発明素子において小さい理由は、
上述したように半導体物質間の接触面積が小さいことに
よるものである。また、第６図より銀微粉末の添加量に
よってバリスタ電圧が変化する様子が認められるが、こ
れは上述したように銀微粉末の添加量によって電気的な
バイパスが変るためと考えられる。The reason why this parallel capacitance is small in the device of the present invention is as follows.
This is due to the small contact area between semiconductor materials as described above. Further, from FIG. 6, it can be seen that the varistor voltage changes depending on the amount of fine silver powder added, but this is thought to be because the electrical bypass changes depending on the amount of fine silver powder added, as described above.
なお、上記の実施例においては、半導体物質としては、
ＺｎＯを例にとり説明したが、それ以外の半導体物質で
あっても差支えないことはもちろんである。また、同様
に絶縁被膜を構成する材料としては、 Ｂｉ２Ｏ，単
独に限られることはなく、ｃｏｒＭｎ 、 Ｓｂ 、ム
ｌ、Ｔｉ、Ｓｒ、Ｍｇ、Ｎｉ、Ｏｒ、Ｓｉなどの金属酸
化物またはこれら金属の有機金属化合物などでもよいも
のであり、それらを単独または複数組合せて添加したも
のも使用することができるものである。また、導電性物
質としては本実施例の銀単独以外に
、例えばＡｕ、Ａｅ、Ｚｎ、Ｎｉ、Ｗ、Ｃｕ、
Ｓｎ、Ｉｎ、Ｍｎ、Ｏｒなどの金属または、これら金属
の酸化物；念Ｗ〜−゛を単独または組合せて使用する
こともできる。In addition, in the above embodiment, the semiconductor material is
Although ZnO has been described as an example, it goes without saying that other semiconductor materials may be used. Similarly, the material constituting the insulating film is not limited to Bi2O alone, but also metal oxides such as corMn, Sb, Mul, Ti, Sr, Mg, Ni, Or, and Si, or metal oxides of these metals. Organic metal compounds may also be used, and those added singly or in combination can also be used. In addition, as the conductive substance, in addition to silver alone in this example,
, for example, Au, Ae, Zn, Ni, W, Cu,
Metals such as Sn, In, Mn, and Or, or oxides of these metals, may be used alone or in combination.
さらに、微粉末状の半導体物質と微粉末状の導電性物質
とを固める絶縁性の結合剤としては、ポリイミド樹脂の
他にも種々考えられることはもちろんであり１熱硬化性
樹脂、たとえばフェノール樹脂、フラン樹脂、ユリア樹
脂、メラミン樹脂。Furthermore, as an insulating binder for solidifying the fine powder semiconductor material and the fine powder conductive material, there are of course various other insulating binders other than polyimide resin that can be considered.1 Thermosetting resins such as phenol resin , furan resin, urea resin, melamine resin.
不飽和ポリエステル樹脂、ジアリルフタレート樹脂、エ
ポキシ樹脂、ポリウレタン樹脂、ケイ素樹脂などでも良
いものである。Unsaturated polyester resins, diallyl phthalate resins, epoxy resins, polyurethane resins, silicone resins, etc. may also be used.
発明の効果
以上の説明より明らかなように本発明の電圧非直線性素
子は、抵電流域における電圧非直線指数αが大きく、ま
た並列静電容量の小さな素子が得られることから、消費
電流の小さい液晶、・ＫＬなどのデバイスのスイッチン
グ素子として最適な素子を提供できるものである。また
、微粉末状の導電性物’ｌ’ｅ介在させていることによ
って、微粉末状の半導体物質間の電気的接続を安定にし
、特性のバラツキの少ない素子を得ることができ、かつ
この導電性物質の介在量によってバリスタ電圧を制御す
ることができるという利点が得られるため、電極間距離
に制約されることなく、たとえば電極間距離を極度に狭
くしなくてもバリスタ電圧の低い素子が得られ、上記電
圧非直線指数αが大きいことと相まって従来のＺｎＯバ
リスタでは対応することのできなかった低電圧用Ｉ（５
の保護素子や低い電圧における電圧安定化素子として使
用することができる。さらに、結合剤で固めて素子形成
を行う際に高温プロセスを必要とすることなく簡単にし
て作ることができるため、回路基板上やガラス基板上に
素子を直接形成することができるものである。このよう
に種々の特徴を有する本発明の電圧非直線性素子は、今
までのＺｎＯバリスタなどでは考えられない幅広い用途
が期待できるものであり、その産業性は犬なるものであ
る。Effects of the Invention As is clear from the above explanation, the voltage nonlinear element of the present invention has a large voltage nonlinearity index α in the resistance current range, and an element with small parallel capacitance can be obtained, so that current consumption can be reduced. It is possible to provide an element that is optimal as a switching element for devices such as small liquid crystals and KLs. In addition, by interposing the finely powdered conductive substance 'l'e, it is possible to stabilize the electrical connection between the finely powdered semiconductor substances and obtain an element with less variation in characteristics. The advantage is that the varistor voltage can be controlled by the amount of intervening substance, so it is possible to obtain a device with a low varistor voltage without being restricted by the distance between the electrodes, for example, without making the distance between the electrodes extremely narrow. In combination with the large voltage nonlinearity index α mentioned above, the low voltage I(5
It can be used as a protection element or a voltage stabilizing element at low voltages. Furthermore, since it can be easily manufactured without requiring a high-temperature process when forming an element by solidifying it with a binder, the element can be directly formed on a circuit board or a glass substrate. The voltage non-linear element of the present invention having such various characteristics can be expected to have a wide range of applications unimaginable for conventional ZnO varistors and the like, and its industrial applicability is excellent.
第１図は本発明に係わる電圧非直線性素子の一実施例を
示す拡大断面図、第２図および第３図はそれぞれ本発明
の素子をガラス基板上に設けた実施例を示す断面図、第
４図は本発明素子と従来のＺｎＯバリスタの電圧−電流
特性を示す図、第６図は本発明素子において銀微粉末の
添加量を変えた場合の電圧非直線１月数ａ、バリスタ電
圧ｖＩ／７Ａおよび並列静電容量Ｃの変化する様子を示
す図であるＯ
＋１．１ａ 、 １ｂ 、 ２−・−−−−ＸＴＯ電極
、３，３２Ｌ。
４・・・・・・ガラス基板、６・・・・・・電圧非直線
性素子、６・・・・・・ＺｎＯ微粉末１．７・・・・・
・銀微粉末、８・・・・・・結合剤、９・・・・・・Ｂ
ｊ、 ２０３絶縁被膜。
代理人の氏名 弁理士 中 尾 敏 男 ほか１名第１
図
第２図
Ｊ久ｊ′ラヌ石シ４々、
第４図
→二電圧（ＴンFIG. 1 is an enlarged sectional view showing an embodiment of a voltage nonlinear element according to the present invention, and FIGS. 2 and 3 are sectional views showing an embodiment in which the element of the present invention is provided on a glass substrate, respectively. Figure 4 shows the voltage-current characteristics of the device of the present invention and a conventional ZnO varistor, and Figure 6 shows the voltage nonlinear monthly number a and varistor voltage when the amount of silver fine powder added is changed in the device of the present invention. A diagram showing changes in vI/7A and parallel capacitance C for O +1.1a, 1b, 2-----XTO electrodes, 3,32L. 4...Glass substrate, 6...Voltage nonlinear element, 6...ZnO fine powder 1.7...
・Silver fine powder, 8...Binder, 9...B
j, 203 insulation coating. Name of agent: Patent attorney Toshio Nakao and 1 other person No. 1
Figure 2 J Kuj' Ranu stone 4 Figure 4 → Two voltages (T
Claims (1)
たは導電性の金属酸化物の微 粉末とを絶縁性の結合剤で固め、電極を備えてなること
を特徴とする電圧非直線性素子。[Claims] A semiconductor material in the form of a fine powder coated with a thin insulating coating and a fine powder of a metal or conductive metal oxide are solidified with an insulating binder, and an electrode is provided. Voltage nonlinear element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61035901A JPS62193202A (en) | 1986-02-20 | 1986-02-20 | Voltage nonlinear device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61035901A JPS62193202A (en) | 1986-02-20 | 1986-02-20 | Voltage nonlinear device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62193202A true JPS62193202A (en) | 1987-08-25 |
Family
ID=12454928
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61035901A Pending JPS62193202A (en) | 1986-02-20 | 1986-02-20 | Voltage nonlinear device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62193202A (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5358695A (en) * | 1976-11-08 | 1978-05-26 | Taiyo Yuden Kk | Film varistor |
-
1986
- 1986-02-20 JP JP61035901A patent/JPS62193202A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5358695A (en) * | 1976-11-08 | 1978-05-26 | Taiyo Yuden Kk | Film varistor |
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