JPS62147693A - Thin film el device - Google Patents
Thin film el deviceInfo
- Publication number
- JPS62147693A JPS62147693A JP60289937A JP28993785A JPS62147693A JP S62147693 A JPS62147693 A JP S62147693A JP 60289937 A JP60289937 A JP 60289937A JP 28993785 A JP28993785 A JP 28993785A JP S62147693 A JPS62147693 A JP S62147693A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- thin film
- light emitting
- layer
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims description 22
- 239000010408 film Substances 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 16
- 229910052984 zinc sulfide Inorganic materials 0.000 claims description 4
- 239000005083 Zinc sulfide Substances 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 claims description 3
- 239000012535 impurity Substances 0.000 claims 1
- 229910052738 indium Inorganic materials 0.000 claims 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims 1
- 229910052761 rare earth metal Inorganic materials 0.000 claims 1
- 239000000463 material Substances 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 238000005566 electron beam evaporation Methods 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 239000013543 active substance Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- 229910016653 EuF3 Inorganic materials 0.000 description 1
- 229910019322 PrF3 Inorganic materials 0.000 description 1
- 229910004299 TbF3 Inorganic materials 0.000 description 1
- 239000011149 active material Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 150000002222 fluorine compounds Chemical class 0.000 description 1
- 229910052839 forsterite Inorganic materials 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 229910052747 lanthanoid Inorganic materials 0.000 description 1
- 150000002602 lanthanoids Chemical class 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- HCWCAKKEBCNQJP-UHFFFAOYSA-N magnesium orthosilicate Chemical compound [Mg+2].[Mg+2].[O-][Si]([O-])([O-])[O-] HCWCAKKEBCNQJP-UHFFFAOYSA-N 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- LKNRQYTYDPPUOX-UHFFFAOYSA-K trifluoroterbium Chemical compound F[Tb](F)F LKNRQYTYDPPUOX-UHFFFAOYSA-K 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Landscapes
- Electroluminescent Light Sources (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
産業上の利用分野
本発明はキャラクタやグラフィックなどの表示に用いる
薄膜ＥＬ素子に関するものであり、さらに詳しくは低電
圧駆動可能で安定な薄膜ＥＬ素子の構成に関する。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a thin film EL element used for displaying characters, graphics, etc., and more particularly to the structure of a stable thin film EL element that can be driven at low voltage.
従来の技術
従来より電場発光螢光体を用いた固体映像表示装置とし
ては、Ｘ−Ｙマトリックス表示装置が知られている。こ
の装置は電場発光層の両面に水平平行電極群と垂直平行
電極群とを互いに直交するように配置し、それぞれの電
極群に接続された給電線により切換装置を通して信号を
加えて両電極の交点部分の電場発光層（以下、ＥＬ発光
体層と略称する）を発光させ（この交点の発光部分面を
絵素と称する）、発光絵素の組合せによって文字記号１
図形等を表示させるものである。2. Description of the Related Art An XY matrix display device has been known as a solid-state image display device using an electroluminescent phosphor. In this device, a group of horizontal parallel electrodes and a group of vertical parallel electrodes are arranged perpendicularly to each other on both sides of an electroluminescent layer, and a signal is applied through a switching device by a feeder line connected to each electrode group, and a signal is applied to the intersection of both electrodes. The electroluminescent layer (hereinafter abbreviated as EL emitter layer) of the part is made to emit light (the light emitting part surface at this intersection is called a picture element), and the character symbol 1 is created by combining the light emitting picture elements.
It is used to display figures, etc.
ここで用いられる固体映像表示板は、通常ガラスなどの
透光性基板上に透明平行電極群を形成し、その上に片側
、あるいは両側に誘電体層を介してＥＬ発光体層を順次
積層し、さらにその上に背面平行電極群を下層の透明平
行電極群に直交する配置で積層して形成する。各電極群
には給電線への接続のために引出し端子が設けられる。The solid-state display panel used here usually has a group of transparent parallel electrodes formed on a transparent substrate such as glass, and EL light emitting layers are sequentially laminated on one or both sides with a dielectric layer interposed thereon. , and further thereon, a rear parallel electrode group is laminated in an arrangement perpendicular to the lower layer transparent parallel electrode group. Each electrode group is provided with a lead terminal for connection to a power supply line.
一般に透明平行電極群としては平滑なガラス基板上に酸
化錫を被着するなどにより形成される。Generally, the transparent parallel electrode group is formed by depositing tin oxide on a smooth glass substrate.
これに直交させて、対向する平行電極群がアルミニウム
の真空蒸着などにより形成される。これらのそれぞれの
電極群から給電線を引出すには、各電極群に設けられた
引出し端子へ給電線を接続することによっておこなう。Orthogonally to this, a group of parallel electrodes facing each other is formed by vacuum evaporation of aluminum or the like. The feeder line is drawn out from each of these electrode groups by connecting the feeder line to a drawer terminal provided in each electrode group.
絵素を発光させるために外部から両゛電極間に印加する
駆動電圧はできるだけ低い方がよく、このため誘電体層
をＥＬ発光体層の片側のみに設ける構成のものや、ある
いは誘電体層自身に高誘電率の材料を用いるものなどが
実現されている。The driving voltage applied from the outside between the two electrodes in order to cause the picture element to emit light should be as low as possible. Therefore, the dielectric layer may be provided only on one side of the EL light emitting layer, or the dielectric layer itself may be The use of materials with high dielectric constants has been realized.
発明が解決しようとする問題点
このような従来の薄膜ＥＬ素子、たとえば誘電体層をＥ
Ｌ発光体層の片側のみに設ける片側絶縁層タイプでは誘
電体層が片側にしかないため駆動電圧は低下するが、反
面、駆動電圧の一周期に一回しか発光しないため輝度も
低下する。また、ＥＬ発光体層の両側を誘電体層ではさ
む二重絶縁層タイプで、誘電体層の材料として誘電率の
高いものを用いると輝度も高く、駆動電圧のみを低下さ
せることができるが、駆動中に発光特性が経時的に変化
しやすいという問題があった。Problems to be Solved by the Invention In such conventional thin film EL devices, for example, the dielectric layer is
In the one-sided insulating layer type provided only on one side of the L light emitting layer, the driving voltage is reduced because the dielectric layer is only on one side, but on the other hand, the luminance is also reduced because light is emitted only once per cycle of the driving voltage. In addition, if the EL light emitter layer is sandwiched between dielectric layers on both sides, and a material with a high dielectric constant is used as the material for the dielectric layer, the brightness will be high and only the driving voltage can be reduced. There is a problem in that the light emission characteristics tend to change over time during driving.
そこで、本発明は上述の技術的課題を解決し、低電圧で
駆動可能でしかも輝度低下のない安定な薄膜ＥＬ素子を
提供することを目的とする。SUMMARY OF THE INVENTION Therefore, an object of the present invention is to solve the above-mentioned technical problems and provide a stable thin film EL element that can be driven at a low voltage and has no reduction in brightness.
問題点を解決するための手段
この目的を達成するため本発明は薄膜ＥＬ素子を、基板
上に第１の電極、第１のＥＬ発光体層と第１の誘電体層
との積層膜、第２の電極、第２のＥｆ、発光体層と第２
の誘電体層との積層膜、第３の電極を順次積層して形成
した構成とした。Means for Solving the Problems To achieve this object, the present invention provides a thin film EL device in which a first electrode, a laminated film of a first EL light emitter layer and a first dielectric layer are formed on a substrate, and a first electrode is formed on a substrate. the second electrode, the second Ef, the light emitting layer and the second
The structure was such that a laminated film with a dielectric layer and a third electrode were sequentially laminated.
作用
この構成により、本発明は片側絶縁層タイプの薄膜ＥＬ
素子を片方の電極を共通にして積層することにより、輝
度は片側絶縁層タイプの２倍が得られ、駆動電圧は両側
絶縁層タイプのものより低く、発光特性の経時変化も少
なくなる。Operation With this configuration, the present invention is a thin film EL with an insulating layer on one side.
By stacking the elements with one electrode in common, the luminance is twice as high as that of the one-side insulating layer type, the driving voltage is lower than that of the both-side insulating layer type, and changes in light emitting characteristics over time are reduced.
実施例
第１図は本発明の素子の一実施例を説明するだめの図で
ある。同図において、絶縁性基板１の上に第１の電極２
が形成され、その上に第１のＥＬ発光体層３、第１の誘
電体層４が順次積層されて形成されている。さらにその
上に順次筒２の電極６、第２のＥＬ発光体層６、第２の
誘電体層７および第３の電極８が形成されている。いま
交流パルス電源９を図のように各電極へ接続し、電圧を
印加して素子を駆動すると第１のＥＬ発光体層３は第２
の電極５に対して第１の電極の電位が正の時に大きく発
光し、負のときにはほとんど発光しない。逆に第２のＥ
Ｌ発光体層６は第２の電極５に対して第３の電極の電位
が正のときにはほとんど発光せず、負の時に大きく発光
する。すなわち素子全体では交流電圧の一周期に２回大
きな発光がおこり、片側絶縁層タイプの素子に比較して
約２倍１１ｉ度は高くなる。しかし駆動電圧は片側絶縁
層タイプのものと同じであり高くならない。Embodiment FIG. 1 is a diagram for explaining one embodiment of the device of the present invention. In the figure, a first electrode 2 is placed on an insulating substrate 1.
is formed, and a first EL light emitting layer 3 and a first dielectric layer 4 are sequentially laminated thereon. Furthermore, an electrode 6 of the cylinder 2, a second EL light emitting layer 6, a second dielectric layer 7, and a third electrode 8 are formed in this order. Now, when the AC pulse power source 9 is connected to each electrode as shown in the figure and voltage is applied to drive the element, the first EL light emitting layer 3 becomes the second EL light emitting layer.
A large amount of light is emitted when the potential of the first electrode is positive with respect to the electrode 5, and almost no light is emitted when the potential is negative. Conversely, the second E
The L light emitter layer 6 hardly emits light when the potential of the third electrode is positive with respect to the second electrode 5, and emits a large amount of light when the potential is negative. That is, in the entire device, large light emission occurs twice in one cycle of the alternating current voltage, and the temperature is approximately twice as high as that of a single-side insulating layer type device. However, the driving voltage is the same as that of the one-sided insulating layer type and does not increase.
ＥＬ発光体層と誘電体層との積層の順序については本実
施例では絶縁性基板１に近い方にＥＬ発光体層を設けた
が、どちらか−組、たとえば第１のＥＬ発光体層と第１
の誘電体層の順序を逆にした場合には、第１のＥＬ発光
体層、第２のＥＬ発光体層とも同時に大きな発光が起こ
るため、素子全体では一周期に一回しか大きな発光は起
こらないが、重量されてやはり輝度は約２倍になる。ま
た第１の電極２、第２の電極５が透明電極の場合には電
極の上に直接ＥＬ発光体層を設けた方が発光特性の経時
的な安定性の面からは最も効果が大きかった。Regarding the order of lamination of the EL light emitting layer and the dielectric layer, in this example, the EL light emitting layer was provided closer to the insulating substrate 1, but one set, for example, the first EL light emitting layer 1st
If the order of the dielectric layers is reversed, large light emission occurs in both the first EL light emitting layer and the second EL light emitting layer at the same time, so that large light emission occurs only once per period in the entire device. However, the brightness will be about twice as much due to the weight. In addition, when the first electrode 2 and the second electrode 5 are transparent electrodes, it was found that providing an EL emitter layer directly on the electrodes had the greatest effect in terms of stability of the luminescent characteristics over time. .
第１．第２．第３の電極２，５．８はすべて送給縁性基
板１にはガラス、アルミナまたはフォルステライトなど
通常の薄膜用基板を用いることができる。1st. Second. For all the third electrodes 2, 5.8, the feeding edge substrate 1 can be a common thin film substrate such as glass, alumina or forsterite.
透明電極としては酸化すず（ＳｎＯ２）や酸化インジウ
ム（Ｉｎ２０５）あるいは酸化すずインジウム（ＩＴＯ
）のような透明導電性膜で形成し、金属電極としてはア
ルミニウム（Ａｅ） 、白金（ｐｔ）。As a transparent electrode, tin oxide (SnO2), indium oxide (In205), or indium tin oxide (ITO
), and the metal electrodes are aluminum (Ae) and platinum (pt).
金（Ａｕ）などの金属でよい。A metal such as gold (Au) may be used.
第１．第２誘電体層４，７としては特に限定されるもの
ではないが、Ｂｅ、 Ｍｇ、 Ｙ、 Ｔｉ、 Ｚｒ。1st. The second dielectric layers 4 and 7 include, but are not particularly limited to, Be, Mg, Y, Ti, and Zr.
Ｓｒ、 Ｈｆ、 Ｎｂ、 Ｔａ、 Ｏｒ、 Ｍｏ、 Ｗ
、 Ｚｎ、 Ａｅ、 Ｇａ。Sr, Hf, Nb, Ta, Or, Mo, W
, Zn, Ae, Ga.
Ｓｉまたはランタナイド元素の酸化物および窒化物、フ
ッ化物などが適しており、これらの混合物または化合物
でもよい。とくにペロプスカイト構造の酸化物では高誘
電率の誘電体層が得られる。Oxides and nitrides, fluorides, etc. of Si or lanthanide elements are suitable, and mixtures or compounds thereof may also be used. In particular, a dielectric layer with a high dielectric constant can be obtained with an oxide having a perovskite structure.
第１．第２１ＣＬ発光体層３，６はたとえば活性物質を
含む硫化亜鉛を用いることができる。活性物質としては
Ｍｎ、Ｃｕ、ムｇ、 Ａｕ、 ＴｂＦ３． ＳｍＴ、。1st. For the 21st CL light emitter layers 3 and 6, for example, zinc sulfide containing an active substance can be used. Active substances include Mn, Cu, Mug, Au, TbF3. SmT,.
ＥｒＦ、 、 ＴｍＦ、 、 ＤｙＦ、 、 ＰｒＦ３
． ＥｕＦ３ などが適当である。ＥＬ発光体層は硫
化亜鉛以外のものでもよく、たとえば活性物質を含むＳ
ｒＳやＧａｓなどの電場発光を示すものであればよい。ErF, , TmF, , DyF, , PrF3
．． EuF3 etc. are suitable. The EL phosphor layer may be other than zinc sulfide, for example S containing active material.
Any material that exhibits electroluminescence, such as rS or Gas, may be used.
次に本発明の具体的な一例について、第２図を用いて説
明する。第２図に示したのは本発明にかかる薄膜ＥＬ素
子であって次の手順で作製した。Next, a specific example of the present invention will be explained using FIG. 2. What is shown in FIG. 2 is a thin film EL device according to the present invention, which was manufactured by the following procedure.
市販の透明なガラス板２１を基板とし、この上に電子ビ
ーム蒸着法にて基板温度３００’Ｃで膜厚０・２μｍの
ＩＴＯ膜を全面に形成し、写真食刻法を用いてストライ
プ状の所望のパターンに形成し複数本の第１の電極２２
を得る。次に、基板温度を２５０℃に保って、ＺｎＳ
： Ｍｎ （Ｍｎ 濃度は１モル％）を０．４μｍの
厚さに電子ビーム蒸着して第１のＥＬ発光体層２３を形
成した。次に４００°Ｃの基板温度で０．６μｍの厚さ
にチタン酸ストロンチウム（５ｒＴｉＯ，）膜をスパッ
タリング法にて蒸着し、第１の誘電体層２４を形成した
。その上に電子ビーム蒸着法にて基板温度３００ °Ｃ
で膜厚０．２μｍのＩＴＯ膜を全面に形成し、写真食刻
法を用いて第１の電極２２と直交する方向にストン ５
？
イブ状の複数本の第２の電極２５をパターン形成 よす
る。この上に第２のＩＬＬ発光体層２６、第２の誘電体
層２７をそれぞれ第１のＥＬ発光体層２３、第１の誘電
体層２４と同じ材料、膜厚で同じ製法、条件にて順次積
層して形成した。A commercially available transparent glass plate 21 is used as a substrate, and an ITO film with a thickness of 0.2 μm is formed on the entire surface by electron beam evaporation at a substrate temperature of 300'C, and a striped pattern is formed by photolithography. A plurality of first electrodes 22 formed in a desired pattern
get. Next, while keeping the substrate temperature at 250°C, ZnS
: Mn (Mn concentration: 1 mol %) was deposited by electron beam to a thickness of 0.4 μm to form the first EL light emitting layer 23. Next, a strontium titanate (5rTiO,) film was deposited to a thickness of 0.6 μm at a substrate temperature of 400° C. by sputtering to form the first dielectric layer 24. On top of that, electron beam evaporation is applied to the substrate at a temperature of 300°C.
An ITO film with a thickness of 0.2 μm is formed on the entire surface, and a stone 5 is formed in a direction perpendicular to the first electrode 22 using photolithography.
? A plurality of rib-shaped second electrodes 25 are patterned. On top of this, a second ILL light emitting layer 26 and a second dielectric layer 27 are formed using the same material and film thickness as the first EL light emitting layer 23 and first dielectric layer 24, using the same manufacturing method and conditions. It was formed by sequentially stacking layers.
最後に電子ビーム蒸着法にて厚さ０．３μｍのアルミニ
ウム膜を蒸着し、リフトオフ法にて第２電極２５と直交
する方向すなわち第１の電極と平行方向にストライプ状
の電極パターンを形成した。Finally, an aluminum film having a thickness of 0.3 μm was deposited by electron beam evaporation, and a striped electrode pattern was formed by lift-off in a direction perpendicular to the second electrode 25, that is, in a direction parallel to the first electrode.
このとき第１の電極２２と第３の電極２８の電極幅およ
び電極間間かくを等しくシ、その一端はおたがいに電気
的に接続するよう重ねて形成した。At this time, the first electrode 22 and the third electrode 28 were formed so that the electrode width and the spacing between the electrodes were equal, and their one ends were overlapped so that they were electrically connected to each other.
第１の電極２２と第２の電極２５からそれぞれ一本の電
極を選択して交流電圧を印加すると、同一の絵素１個が
交流の一周期の間に交流電圧の極性に対応してそれぞれ
のＥＬ発光体層が発光した。When one electrode is selected from each of the first electrode 22 and the second electrode 25 and an alternating current voltage is applied, one same pixel is divided into two electrodes corresponding to the polarity of the alternating current voltage during one cycle of the alternating current. The EL phosphor layer of the EL emitter layer emitted light.
本実施例のような第１の電極２２と第３の電極２８との
電気的接続は特に必要ではないが、この接続によって駆
動電圧の素子への供給点を半減でべ効果的である。また
本実施例のように第１の電２２トに筑１のＦ、Ｌを光体
層２３−筑２の雷版２５上に第２のＥＬ発光体層２６を
形成することでＥＬ発光体層上で直接の電極のバタニン
グ工程をなくすことができ、素子作製上有利である。Although the electrical connection between the first electrode 22 and the third electrode 28 as in this embodiment is not particularly necessary, this connection is effective in halving the points at which the drive voltage is supplied to the element. In addition, as in this embodiment, by forming the second EL light emitting layer 26 on the light layer 23 - the lightning plate 25 of the light layer 22 using the F and L of the first electrode 22, an EL light emitting body is formed. It is possible to eliminate the step of directly buttering the electrodes on the layer, which is advantageous in terms of device fabrication.
発明の効果
以上のように本発明によれば、薄膜ＥＬ素子を基板上に
第１の電極、第１のＥＬ発光体層と第１の誘電体層との
積層膜、第２の電極、第２のＥＬ発光体層と第２の誘電
体層との積層膜、第３の電極を順次積層して形成するこ
とにより、低電圧駆動が可能で高輝度の薄膜ｇＬ素子の
実現が可能となる。Effects of the Invention As described above, according to the present invention, a thin film EL element is provided on a substrate with a first electrode, a laminated film of a first EL light emitting layer and a first dielectric layer, a second electrode, and a laminated film of a first EL light emitting layer and a first dielectric layer. By sequentially stacking the laminated film of the second EL light emitter layer and the second dielectric layer and the third electrode, it becomes possible to realize a thin film gL element that can be driven at a low voltage and has high brightness. .
第１図は本発明の一実施例を説明するための薄膜ＥＬ素
子の構成を示す断面図、第２図は本発明のさらに具体的
な一実施例の薄膜ＥＬ素子の断面図である。
１・・・・・・絶縁性基板、２・・・・・・第１の電極
、３・・・・・・第１のＥＬ発光体層、４・・・・・・
第１の誘電体層、５・・・・・第２の電極、６・・・・
・・第２のＥＬ発光体層、７７・・・・・・第２の誘電
体層、８・・・・・・第３の電極、９・・・・・・交流
パルス電源。FIG. 1 is a sectional view showing the structure of a thin film EL device for explaining an embodiment of the present invention, and FIG. 2 is a sectional view of a thin film EL device according to a more specific embodiment of the invention. DESCRIPTION OF SYMBOLS 1... Insulating substrate, 2... First electrode, 3... First EL light emitting layer, 4...
First dielectric layer, 5...Second electrode, 6...
... second EL light emitting layer, 77 ... second dielectric layer, 8 ... third electrode, 9 ... AC pulse power supply.
Claims (9)
電極上に形成された第１のＥＬ発光体層と第１の誘電体
層とよりなる第１の積層膜と、前記第１の積層膜上に設
けられた第２の電極と、前記第２の電極上に形成された
第２のＥＬ発光体層と第２の誘電体層とよりなる第２の
積層膜と、前記第２の積層膜上に形成された第３の電極
とよりなる薄膜ＥＬ素子。(1) a first laminated film consisting of a first electrode formed on a substrate, a first EL light emitter layer and a first dielectric layer formed on the first electrode; a second laminated film including a second electrode provided on the first laminated film, a second EL light emitting layer and a second dielectric layer formed on the second electrode; A thin film EL device comprising a third electrode formed on the second laminated film.
第３の電極のうちどちらか一方が透明電極で他方が金属
膜であることを特徴とする特許請求の範囲第１項記載の
薄膜ＥＬ素子。(2) Claim 1, characterized in that the second electrode is a transparent electrode, and further, one of the first electrode and the third electrode is a transparent electrode and the other is a metal film. The thin film EL device described above.
電極がそれぞれお互いに直交するように設けられた複数
のストライプ状の電極群からなることを特徴とする特許
請求の範囲第１項又は第２項記載の薄膜ＥＬ素子。(3) A patent claim characterized in that the first electrode and the second electrode, and the second electrode and the third electrode each consist of a plurality of striped electrode groups provided so as to be orthogonal to each other. The thin film EL device according to scope 1 or 2.
電極の電極幅および電極間間隔とがそれぞれ等しいこと
を特徴とする特許請求の範囲第３項記載の薄膜ＥＬ素子
。(4) The thin film EL device according to claim 3, wherein the electrode width and inter-electrode spacing of the first electrode are equal to the electrode width and inter-electrode spacing of the third electrode.
いて接続されていることを特徴とする特許請求の範囲第
４項記載の薄膜ＥＬ素子。(5) The thin film EL device according to claim 4, wherein the first electrode and the third electrode are connected at least at one end.
することを特徴とする特許請求の範囲第１項に記載の薄
膜ＥＬ素子。(6) The thin film EL device according to claim 1, wherein the first and second EL light emitting layers contain zinc sulfide as a main component.
くとも１種以上の希土類元素が含まれていることを特徴
とする特許請求の範囲第１項又は第６項記載の薄膜ＥＬ
素子。(7) The thin film EL according to claim 1 or 6, wherein the first and second EL light emitting layers contain at least one kind of rare earth element as an impurity.
element.
極上に第１のＥＬ発光体層、第２の電極上に第２のＥＬ
発光体層がそれぞれ積層されていることを特徴とする特
許請求の範囲第１項記載の薄膜ＥＬ素子。(8) The first and second electrodes are transparent electrodes, the first EL light emitter layer is on the first electrode, and the second EL layer is on the second electrode.
2. The thin film EL device according to claim 1, wherein the light emitting layers are laminated.
からなることを特徴とする特許請求の範囲第２項又は第
８項記載の薄膜ＥＬ素子。(9) The thin film EL device according to claim 2 or 8, wherein the transparent electrode is made of a conductive film containing at least indium.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60289937A JPS62147693A (en) | 1985-12-23 | 1985-12-23 | Thin film el device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60289937A JPS62147693A (en) | 1985-12-23 | 1985-12-23 | Thin film el device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62147693A true JPS62147693A (en) | 1987-07-01 |
Family
ID=17749673
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60289937A Pending JPS62147693A (en) | 1985-12-23 | 1985-12-23 | Thin film el device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62147693A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2015111592A (en) * | 2006-01-18 | 2015-06-18 | エルジー・ケム・リミテッド | Laminate type organic light-emitting element |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5956391A (en) * | 1982-09-27 | 1984-03-31 | 株式会社東芝 | El display unit |
-
1985
- 1985-12-23 JP JP60289937A patent/JPS62147693A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5956391A (en) * | 1982-09-27 | 1984-03-31 | 株式会社東芝 | El display unit |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2015111592A (en) * | 2006-01-18 | 2015-06-18 | エルジー・ケム・リミテッド | Laminate type organic light-emitting element |
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