JPS62115694A - Thin film el device - Google Patents
Thin film el deviceInfo
- Publication number
- JPS62115694A JPS62115694A JP60254123A JP25412385A JPS62115694A JP S62115694 A JPS62115694 A JP S62115694A JP 60254123 A JP60254123 A JP 60254123A JP 25412385 A JP25412385 A JP 25412385A JP S62115694 A JPS62115694 A JP S62115694A
- Authority
- JP
- Japan
- Prior art keywords
- transparent electrode
- electrode
- transparent
- thin film
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims description 13
- 239000000758 substrate Substances 0.000 claims description 13
- 239000011159 matrix material Substances 0.000 claims description 3
- 239000010408 film Substances 0.000 description 13
- 238000000034 method Methods 0.000 description 9
- 230000015556 catabolic process Effects 0.000 description 6
- 239000011521 glass Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 239000013543 active substance Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005566 electron beam evaporation Methods 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 3
- 239000005083 Zinc sulfide Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910003437 indium oxide Inorganic materials 0.000 description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- 229910052984 zinc sulfide Inorganic materials 0.000 description 2
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 2
- 101100348958 Caenorhabditis elegans smf-3 gene Proteins 0.000 description 1
- 229910016653 EuF3 Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910019322 PrF3 Inorganic materials 0.000 description 1
- 229910021175 SmF3 Inorganic materials 0.000 description 1
- 241000270666 Testudines Species 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 229910052839 forsterite Inorganic materials 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- 229910052747 lanthanoid Inorganic materials 0.000 description 1
- 150000002602 lanthanoids Chemical class 0.000 description 1
- HCWCAKKEBCNQJP-UHFFFAOYSA-N magnesium orthosilicate Chemical compound [Mg+2].[Mg+2].[O-][Si]([O-])([O-])[O-] HCWCAKKEBCNQJP-UHFFFAOYSA-N 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 230000002040 relaxant effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 238000010025 steaming Methods 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Landscapes
- Electroluminescent Light Sources (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
産業上の利用分野
本発明はキャラクタやグラフィックなどの表示に用いる
薄膜ＥＬ素子に関するものであり、さらに詳しくは大画
面ＥＬパネルの電極構造に関する。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a thin film EL element used for displaying characters, graphics, etc., and more specifically to an electrode structure for a large screen EL panel.
従来の技術
従来より電場発光蛍光体を用いた固体映像表示装置とし
ては、Ｘ−Ｙマトリックス表示８置が知られている。こ
の装置は電場発光層の両面に水平平行電極群と垂直平行
電極群とを互いに直交するように配置し、それぞれの電
極群に接続された給電線により切換装置を通して信号を
加えて両電極の交点部分の電場発光層（以下Ｅし発光体
層と略称する）を発光させ（この交点の発光部分面を絵
素と称する）、発光絵素の組合せによって文字記号。2. Description of the Related Art Conventionally, an eight-position XY matrix display is known as a solid-state image display device using an electroluminescent phosphor. In this device, a group of horizontal parallel electrodes and a group of vertical parallel electrodes are arranged perpendicularly to each other on both sides of an electroluminescent layer, and a signal is applied through a switching device using a feeder line connected to each electrode group, and a signal is applied to the intersection of both electrodes. The electroluminescent layer (hereinafter abbreviated as "E") of the part is made to emit light (the light-emitting part surface at this intersection is called a picture element), and a character symbol is created by combining the light-emitting picture elements.
図形等を表示させるものである。It displays figures, etc.
ここで用いられる固体映像表示板は、通常ガラスなどの
透光性基板上に透明平行電極群を形成し、その上に片側
あるいは両側に誘電体層を介してＥＬ発光体層を順次積
層し、さらにその上に背面平行電極群を下層の透明平行
電極群に直交する配置で積層して形成する。各電極群に
は給電線への接続のために引出し端子が設けられる。The solid-state image display panel used here usually has a group of transparent parallel electrodes formed on a transparent substrate such as glass, and EL light emitter layers are successively laminated on one or both sides of the electrode via a dielectric layer. Furthermore, a rear parallel electrode group is laminated thereon in an arrangement perpendicular to the lower layer transparent parallel electrode group. Each electrode group is provided with a lead terminal for connection to a power supply line.
一般にｊＡ明平行電極群としては平滑なガラス基板上に
酸化錫を被着するなどにより形成される。Generally, the jA bright parallel electrode group is formed by depositing tin oxide on a smooth glass substrate.
これに直交させて、対向する平行電極群がアルミニウム
の真空蒸着などにより形成される。これらのそれぞれの
電極群から給電線を引出すには、各電極群に設けられた
引出し端子へ給電線を接続することによっておこなう。Orthogonally to this, a group of parallel electrodes facing each other is formed by vacuum evaporation of aluminum or the like. The feeder line is drawn out from each of these electrode groups by connecting the feeder line to a drawer terminal provided in each electrode group.
この場合、表示板の表示面積が大きくなるほど、あるい
は表示面積は同じでも表示面密度が大きくなって電極幅
が狭くなるほど透明平行電極の長さ方向の電気抵抗値が
大きくなり、電極の一端のみからの給電では電圧降下が
大きくなって、電極の長さ方向の発光強度に傾斜が生じ
、給電端から遠ざかる程輝度が低下し、表示画面中の輝
度が不均一になる。In this case, as the display area of the display board becomes larger, or even if the display area is the same but the display surface density becomes larger and the electrode width becomes narrower, the electric resistance value in the length direction of the transparent parallel electrodes becomes larger. When feeding power, the voltage drop becomes large, and the emission intensity in the length direction of the electrode becomes sloped, and the brightness decreases as the distance from the power feeding end increases, making the brightness across the display screen non-uniform.
一般に電極の電気抵抗値は電極の抵抗率に比例し、断面
積に反比例する。したがって通常は電極幅が決まってい
るため、透明電極の抵抗値を下げるためには抵抗率を小
さくするか、電極を厚くするかの方法がある。このうち
、抵抗率を小さくするには限界があるため、たとえば抵
抗率の小さい金属薄膜を透明電極へ積層して透明電極の
抵抗値を下げている（特開昭６０−１３１７９８号）。Generally, the electrical resistance value of an electrode is proportional to its resistivity and inversely proportional to its cross-sectional area. Therefore, since the electrode width is usually fixed, there are ways to lower the resistance value of the transparent electrode by decreasing the resistivity or increasing the thickness of the electrode. Since there is a limit to reducing the resistivity, for example, a metal thin film with low resistivity is laminated on the transparent electrode to lower the resistance value of the transparent electrode (Japanese Patent Laid-Open No. 131798/1983).
また、透明電極の膜厚を厚くすることについては、透明
電極の端と上部背面電極との間で電界集中により絶縁破
壊が体重ずるのを防ぐため、透明電極の端部に急激な段
差をつけないように透明電極の端部をテーパ状にエツチ
ングして形成する提案もなされている。In addition, in order to increase the thickness of the transparent electrode, in order to prevent dielectric breakdown from shifting due to electric field concentration between the edge of the transparent electrode and the upper back electrode, a sharp step is created at the edge of the transparent electrode. There has also been a proposal to form the transparent electrode by etching its end portion into a tapered shape to prevent this.
発明が解決しようとする問題点
このような従来の方法、たとえば金属薄膜を積層する方
法では、絶縁破壊の原因となる透明電極端部の段差につ
いては何ら解決されないばかりか、透明電極の透明度を
低下させる原因にもなる。また、透明電極の端部をテー
バ状にエツチングする方法では、薄膜ＥＬ索子基板全域
にわたって透明電極の端部に均一にテーパをつけること
は技術的に困難であった。Problems to be Solved by the Invention These conventional methods, for example, the method of laminating thin metal films, do not solve the problem of the level difference at the end of the transparent electrode, which causes dielectric breakdown, and also reduce the transparency of the transparent electrode. It can also cause Furthermore, in the method of etching the ends of the transparent electrodes into a tapered shape, it is technically difficult to uniformly taper the ends of the transparent electrodes over the entire area of the thin film EL cable substrate.
本発明は上述の技術的課題を解決し、表示画面のｉ！！
度の均一化および透明電極端部での絶縁破壊の軽減をは
かり、大画面で高’ＩＲａ度の薄膜ＥＬｉ子を提供する
ことを目的とする。The present invention solves the above-mentioned technical problems, and the i! !
The purpose of this invention is to provide a thin film ELi element with a large screen and high IRa degree by making the temperature uniform and reducing dielectric breakdown at the end of the transparent electrode.
問題点を解決するための手段
本’５１明は上記問題点を解決するため、互いに直交づ
゛る方向にマトリクス状に複数本配列されたストライプ
状の透明電極と背面電極との間に誘電体図を介して発光
体層が層設して形成されるとともに、前記透明電極は基
板上に形成されて成る簿税ＥＬ素子において、前記透明
電極のザくなくとも発光部分が第１の透明電極と、前記
第１の透明電極をおおうように前記第１の透明電極上に
積層して形成されて前記第１の透明電極より電極幅の大
ぎい第２の透明電極とからなる構成にしたものである。Means for Solving the Problems In order to solve the above-mentioned problems, the book '51 Akira uses a dielectric material between the back electrode and the striped transparent electrodes arranged in a matrix in directions orthogonal to each other. As shown in the figure, in the EL element in which a light-emitting layer is layered and the transparent electrode is formed on a substrate, at least the light-emitting portion of the transparent electrode is connected to the first transparent electrode. and a second transparent electrode that is laminated on the first transparent electrode so as to cover the first transparent electrode and has a larger electrode width than the first transparent electrode. It is.
作用
上記構成のように、第１の透明電極と第２の透明電極と
を積層して形成づることにより、透明電極の膜厚が大き
くなって電気抵抗値が小さくなり、しかも第２の透明電
極の電極幅が第１の透明電極の市外輪より大きいため、
第１の透明電極の端部の段差形状は全体か第２の透明電
極でカバーされることて緩和８れ、したがって透明電極
として端部の段差形状はゆるやかなものとなり、透明電
極の段差に起因する絶縁破壊は発生しにくくなる。Effect As in the above configuration, by laminating and forming the first transparent electrode and the second transparent electrode, the film thickness of the transparent electrode becomes large and the electrical resistance value becomes small. Since the electrode width is larger than the outer ring of the first transparent electrode,
The step shape at the end of the first transparent electrode is relaxed because it is entirely covered by the second transparent electrode, and therefore, the step shape at the end of the transparent electrode becomes gentle. dielectric breakdown is less likely to occur.
実施例
以下、本発明の一実施例を図面に基づいて説明する。第
１図は本発明の素子の一実施例を説明づるための図であ
る。第１図において、１１はこの実施例の薄膜ＥＬ木子
で、絶縁性基板１２の上に、第１の透明電極１３ａ、第
２の透明電極１３ｂからなる透明電極１３が形成され、
その上に第１誘電体層１４が積層されて形成されている
。さらにその上に順次ＥＬ光光体１ｉ１１５、第２誘電
体層１６および背面電極１７が形成されている。EXAMPLE Hereinafter, an example of the present invention will be described based on the drawings. FIG. 1 is a diagram for explaining one embodiment of the element of the present invention. In FIG. 1, reference numeral 11 is a thin film EL panel of this embodiment, in which a transparent electrode 13 consisting of a first transparent electrode 13a and a second transparent electrode 13b is formed on an insulating substrate 12.
A first dielectric layer 14 is laminated thereon. Furthermore, an EL light beam 1i115, a second dielectric layer 16, and a back electrode 17 are formed in this order.
絶縁性基板１２にはガラス、アルミナまたはフォルステ
ライトなど通常の薄膜用基板を用いることができる。As the insulating substrate 12, a normal thin film substrate such as glass, alumina, or forsterite can be used.
透明電極１３は酸化すず（ＳｎＯ２）や酸化インジウム
（Ｉｎｓ＋０５＞のような透明４ Ｍ性膜で形成し、背
面電極１７はアルミニウム（八ρ）、白金（Ｐ ｔ）、
金（Ａｕ）などの金属でよい。透明電極１３はザくなく
とも素子の発光部分において第２の透明電極１３ｂが第
１の透明電極１３８両端部をおおうようになっていれば
とくに形状や厚さの制限はなく、第２の透明電極１３ｂ
が第１の透明電極１３ａ両端部をお８３うことで、透明
電極の膜厚が大きくなるとともに、第１の透明電極の端
部の段差形状ｔよゆるやかなものとなる。The transparent electrode 13 is formed of a transparent 4M film such as tin oxide (SnO2) or indium oxide (Ins+05), and the back electrode 17 is formed of aluminum (8ρ), platinum (Pt), or
A metal such as gold (Au) may be used. The shape and thickness of the transparent electrode 13 are not particularly limited as long as the second transparent electrode 13b covers both ends of the first transparent electrode 138 in the light-emitting part of the device. Electrode 13b
83 on both ends of the first transparent electrode 13a, the film thickness of the transparent electrode increases and the step shape t at the end of the first transparent electrode becomes gentler.
第１．第２誘電体層１４．１６は３ｅ 、Ｍ（１、Ｙ。1st. The second dielectric layer 14.16 is 3e, M(1, Y.
Ｊｉ 、Ｚｒ、Ｓｒ、Ｈｆ 、Ｎｂ、Ｔａ、Ｑｒ。Ji, Zr, Sr, Hf, Nb, Ta, Qr.
Ｍｏ、Ｗ、Ｚｎ、ＡＲ，Ｇａ、Ｓｉまたはランタナイド
元素の酸化物などが適しており、これらの混合物または
化合物でもよい。とくにペロブスカイト構造の酸化物で
゛は高誘電率の誘電体層が得られる。Oxides of Mo, W, Zn, AR, Ga, Si or lanthanide elements are suitable, and mixtures or compounds thereof may also be used. In particular, a dielectric layer with a high dielectric constant can be obtained using an oxide having a perovskite structure.
ＥＬ発光体層１５はたとえば活性物質を含む硫化亜鉛を
用いることができる。活性物質としてはＭｎ、Ｃｕ、Ａ
ｇ、Ａｕ、ＴｂＦｘ、ＳｍＦ３゜ＥｒＦｘ 、ＴｍＦ
３ 、ＤＶＦ３ 、ＰｒＦ３ 、ＥｕＦ３などが適
当である。ＥＬ発光体層１５は硫化亜鉛以外のものでも
よく、たとえば活性物質を含むＳｒＳやＣａＳなどの電
場発光を示すものであればよい。For the EL emitter layer 15, for example, zinc sulfide containing an active substance can be used. Active substances include Mn, Cu, A
g, Au, TbFx, SmF3゜ErFx, TmF
3, DVF3, PrF3, EuF3, etc. are suitable. The EL luminescent layer 15 may be made of materials other than zinc sulfide, as long as they exhibit electroluminescence, such as SrS or CaS containing an active substance.
次に本発明の具体的な一例について、第２図を用いて説
明づる。第２図［ａ）に示す薄膜［「素子２１を次の手
順で作製した。まず第２図（ｂ）に示づ−ように市販の
透明なガラス板２２を基板とし、この上に電子ビーム蒸
着法にて阜仮渇匪３００°Ｃで膜厚０．２μｍの酸化寸
ずインジウム膜（以下ＩＴ’Ｏ膜と略号）を全面に形成
し、写真食剣法を用いて第１の透明電極２３ａを所望の
パターンに形成リ−る。Next, a specific example of the present invention will be explained using FIG. 2. The thin film element 21 shown in FIG. 2(a) was prepared in the following manner. First, as shown in FIG. 2(b), a commercially available transparent glass plate 22 was used as a substrate, and an electron beam was A 0.2 μm thick indium oxide film (hereinafter abbreviated as IT'O film) is formed on the entire surface at a temperature of 300° C. using a vapor deposition method, and the first transparent electrode 23a is formed using a photolithography method. Form it into a desired pattern.
ついで第２図（Ｃ）に承りようにこの上にたとえＣよ。Next, as shown in Figure 2 (C), let's draw an analogy C on top of this.
電子ビーム蒸着法にて基板温度３００℃て膜厚０．２μ
ｔのＩＴＯ股を全面に形成し、写真食剣法を用いて第１
の透明電極２３ａをＪｊおうように第２の透明電極２３
ｂのパターンを形成し、第２図（ｄ）に示Ｖ透明電極２
３を得る。Film thickness of 0.2μ at substrate temperature of 300℃ using electron beam evaporation method
The ITO crotch of t is formed on the entire surface, and the first
The second transparent electrode 23 covers the transparent electrode 23a of Jj.
A pattern b is formed, and the V transparent electrode 2 shown in FIG. 2(d) is formed.
Get 3.
次に４００℃の基板温度で０．６μｍの厚さにチタン酸
ストロンチウム（ＳｒＴｉＯ３）膜をスパッタリング法
にて蒸着し、第１誘電体層２４を形成した。次に、基板
温度を２５０ ’Ｃに保って、２ｎＳ ：Ｍｎ （Ｍ
ｎ濃度は１モル％）を０．４μｍの厚さに電子ビーム蒸
着してＦｌ−発光体層２５を形成した。Next, a strontium titanate (SrTiO3) film was deposited to a thickness of 0.6 μm at a substrate temperature of 400° C. by sputtering to form the first dielectric layer 24. Next, the substrate temperature was kept at 250'C and 2nS :Mn (M
The Fl-phosphor layer 25 was formed by electron beam evaporation of n (n concentration: 1 mol %) to a thickness of 0.4 μm.
蒸看後、引き続いて真空チャンバ内において５５（１℃
の温度で１時間熱処理を施して、ＥＬ発光体層２５の特
性を向上させた。それから、この上に０．０５μｍの厚
きに酸化イツトリウム（Ｙ２０３）膜を電子ビーム蒸着
づることにより、第２誘電体層２６を形成した。なお、
このときの基板温度は２００℃とした。さらにその上に
、アルミニウムを０．２μｌの厚さに真空蒸着して背面
電極２７を形成しで、薄膜Ｅ ｌ−素子２１を完成した
。After steaming, it was heated to 55°C (1°C) in a vacuum chamber.
The characteristics of the EL light emitting layer 25 were improved by performing heat treatment at a temperature of 1 hour. Thereafter, a second dielectric layer 26 was formed by electron beam evaporation of a yttrium oxide (Y203) film to a thickness of 0.05 μm. In addition,
The substrate temperature at this time was 200°C. Furthermore, a back electrode 27 was formed by vacuum evaporating aluminum to a thickness of 0.2 μl, thereby completing a thin film El-element 21.
背面電極２７と透明型４ｉ２３との間に交流電圧を印加
してこの水子を光光させた結果、透明電極２３の端部の
段差によって梵生ずる絶縁破壊はほとんどなくなった。As a result of applying an alternating current voltage between the back electrode 27 and the transparent mold 4i23 to make the water particles shine, dielectric breakdown caused by the step at the end of the transparent electrode 23 almost disappeared.
本実施例では透明電極にｒＴＯ膜を用りているが、もら
ろん他の透明４電膜でもかまわないし、１１Ｑの形成法
ら何ら制限されるものではなく、電子ビーム蒸着法以外
にも、抵抗加熱法、スパッタリング法などでもよい。し
かしながら第２の透明型１Ｅｉ２３ｂを形成Ｊるために
透明導電膜の形成法に関しては特にスパッタリング法に
よる形成が電極の段差形状の緩和効果が大きかった。透
明電極のパターン形成についても写真食剣法以外にたと
えばメタルマスクなどでもよいことはいうまでもない。In this example, an rTO film is used for the transparent electrode, but of course other transparent 4-electrode films may be used, and the method of forming 11Q is not limited in any way. A resistance heating method, a sputtering method, etc. may also be used. However, regarding the method of forming the transparent conductive film for forming the second transparent type 1Ei23b, the sputtering method had a particularly great effect of relaxing the step shape of the electrode. It goes without saying that for pattern formation of the transparent electrodes, for example, a metal mask or the like may be used in addition to the photographic technique.
発明の効果
以上のように本発明によれば、透明電極を第１の透明電
極とそれをおおうようにｇＩ層して形成した第２の透明
電極とで形成することにより、表示画面の輝度の均一化
、絶縁破壊の減少を図り、さらに大画面高精ｌｉ１度を
有する薄膜Ｅ［−素子の実現が可能となり、その工業的
価値は極めて大ぎい。Effects of the Invention As described above, according to the present invention, the brightness of the display screen can be reduced by forming the transparent electrode with the first transparent electrode and the second transparent electrode formed by covering the first transparent electrode with a gI layer. It has become possible to achieve uniformity, reduce dielectric breakdown, and furthermore realize a thin film E[- element with a large screen and high precision 1 degree, and its industrial value is extremely large.
第１図は本発明の一実施例を説明するための１膜ＥＬ索
子の構成を示づ”断面図、第２図は木光明のさらに具体
的な一実施例を説明するための１ｌｌＥｌ−素子の断面
図および透明電極の形成１程を示す断面図である。
１２、２２・・・絶縁姓阜板、１３．２３・・・透明電
極、１３ａ。
２３ａ・・・第１の透明電極、１３ｂ 、 ２３ｂ・・
・第２の透明電極、１４．２４・・・第１誘電体層、１
５．２５・・・［Ｌ発光体層、１６．２６・・・第２誘
電体層、１７．２７・・・背面電極第１図
／／−ＡＭＬＬ科
／２−艶憾１生幕級
／３− 透明電独
Ｂａ、 ／３ｂ−一筈ｌち、Ｉひ・斗２゜か８覧柚ｔ４
．／ｂ−−一不ｌ丹ひ°賽２詩亀俸層／ターＥＬ発九俸
層
７７−″＃＠亀種
第２図
２３々FIG. 1 is a sectional view showing the configuration of a single-film EL cable for explaining an embodiment of the present invention, and FIG. 2 is a cross-sectional view for explaining a more specific embodiment of the present invention. It is a cross-sectional view of an element and a cross-sectional view showing the first step of forming a transparent electrode. 12, 22... Insulating post board, 13.23... Transparent electrode, 13a. 23a... First transparent electrode, 13b, 23b...
・Second transparent electrode, 14.24...first dielectric layer, 1
5.25...[L light emitter layer, 16.26...Second dielectric layer, 17.27...Back electrode Figure 1//-AMLL class/2-Gloss 1 raw curtain grade/ 3- Transparent electric cell Ba, /3b-It should be lchi, Ihi・to2゜ka8ranyu t4
．． /b--ichifutanhi°sai 2 poetry turtle layer/tar EL 9 layer 77-''#@ turtle species 2nd figure 23 etc.
Claims (1)
れたストライプ状の透明電極と背面電極との間に誘電体
層を介して発光体層が層設して形成されるとともに、前
記透明電極は基板上に形成されて成る薄膜ＥＬ素子であ
つて、前記透明電極のすくなくとも発光部分が第１の透
明電極と、前記第１の透明電極をおおうように前記第１
の透明電極上に積層して形成された前記第１の透明電極
より電極幅の大きい第２の透明電極とからなる薄膜ＥＬ
素子。1. A light emitter layer is formed by interposing a dielectric layer between a back electrode and a plurality of striped transparent electrodes arranged in a matrix in directions orthogonal to each other, and the transparent electrode is formed on a substrate. a thin film EL element formed in a thin film EL element formed in
A thin film EL comprising a second transparent electrode having a larger electrode width than the first transparent electrode, which is laminated on a transparent electrode.
element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60254123A JPS62115694A (en) | 1985-11-13 | 1985-11-13 | Thin film el device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60254123A JPS62115694A (en) | 1985-11-13 | 1985-11-13 | Thin film el device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62115694A true JPS62115694A (en) | 1987-05-27 |
Family
ID=17260544
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60254123A Pending JPS62115694A (en) | 1985-11-13 | 1985-11-13 | Thin film el device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62115694A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6410997U (en) * | 1987-07-09 | 1989-01-20 | ||
| US7663496B2 (en) | 2006-12-07 | 2010-02-16 | Smc Kabushiki Kaisha | Pressure switch |
| US7893371B2 (en) | 2006-12-07 | 2011-02-22 | Smc Kabushiki Kaisha | Pressure switch |
-
1985
- 1985-11-13 JP JP60254123A patent/JPS62115694A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6410997U (en) * | 1987-07-09 | 1989-01-20 | ||
| US7663496B2 (en) | 2006-12-07 | 2010-02-16 | Smc Kabushiki Kaisha | Pressure switch |
| US7893371B2 (en) | 2006-12-07 | 2011-02-22 | Smc Kabushiki Kaisha | Pressure switch |
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