JPS6366897A - Thin film el device and manufacture of the same - Google Patents
Thin film el device and manufacture of the sameInfo
- Publication number
- JPS6366897A JPS6366897A JP61209898A JP20989886A JPS6366897A JP S6366897 A JPS6366897 A JP S6366897A JP 61209898 A JP61209898 A JP 61209898A JP 20989886 A JP20989886 A JP 20989886A JP S6366897 A JPS6366897 A JP S6366897A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- dielectric
- dielectric layer
- layer
- oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims description 66
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- JGIATAMCQXIDNZ-UHFFFAOYSA-N calcium sulfide Chemical compound [Ca]=S JGIATAMCQXIDNZ-UHFFFAOYSA-N 0.000 claims description 15
- 238000000034 method Methods 0.000 claims description 9
- 238000005566 electron beam evaporation Methods 0.000 claims description 5
- BJXXCWDIBHXWOH-UHFFFAOYSA-N barium(2+);oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[Ba+2].[Ba+2].[Ba+2].[Ba+2].[Ba+2].[Ta+5].[Ta+5].[Ta+5].[Ta+5] BJXXCWDIBHXWOH-UHFFFAOYSA-N 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 4
- 238000010030 laminating Methods 0.000 claims description 3
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 claims description 2
- 239000000758 substrate Substances 0.000 description 11
- 239000011521 glass Substances 0.000 description 6
- 230000015556 catabolic process Effects 0.000 description 5
- 239000005083 Zinc sulfide Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 229910052984 zinc sulfide Inorganic materials 0.000 description 4
- 239000013543 active substance Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000004020 luminiscence type Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 239000008188 pellet Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 101100348958 Caenorhabditis elegans smf-3 gene Proteins 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910021175 SmF3 Inorganic materials 0.000 description 1
- 229910004299 TbF3 Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000010549 co-Evaporation Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- RGZQGGVFIISIHZ-UHFFFAOYSA-N strontium titanium Chemical compound [Ti].[Sr] RGZQGGVFIISIHZ-UHFFFAOYSA-N 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- LKNRQYTYDPPUOX-UHFFFAOYSA-K trifluoroterbium Chemical compound F[Tb](F)F LKNRQYTYDPPUOX-UHFFFAOYSA-K 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Landscapes
- Electroluminescent Light Sources (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Abstract] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
産業上の利用分野
この発明はキャラクタやグラフィックスなどの表示に用
いる薄膜ＥＬ素子およびその製造方法に関するものであ
り、さらに詳しくは発光特性が長期にわたって安定な薄
膜ＥＬ素子およびその製造方法に関する。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application This invention relates to a thin film EL device used for displaying characters, graphics, etc., and a method for manufacturing the same. It relates to its manufacturing method.
従来の技術
従来より電場発光蛍光体を用いた固体映像表示装置とし
てＸ−Ｙマトリクス表示装置が知られている。この装置
は電場発光層の両面に水平平行電極群と垂直平行電極群
とを互いに直交するように配置し、それぞれの電極群に
接続された給電線により切換え装置を通して信号を加え
て両電極の交点部分の電場発光層（以下ＥＬ発光体層と
略称する）を発光させ（この交点の発光部分面を絵素と
称する）、発光した絵素の組み合わせによって文字記号
、図形等を表示させるものである。2. Description of the Related Art An X-Y matrix display device has been known as a solid-state image display device using an electroluminescent phosphor. In this device, a group of horizontal parallel electrodes and a group of vertical parallel electrodes are arranged perpendicularly to each other on both sides of an electroluminescent layer, and a signal is applied through a switching device by a feeder line connected to each electrode group, and a signal is applied to the intersection of both electrodes. The electroluminescent layer (hereinafter abbreviated as EL emitter layer) of the part is made to emit light (the light emitting part surface at this intersection is called a picture element), and characters, symbols, figures, etc. are displayed by the combination of the emitted picture elements. .
ここで用いられる固体映像表示装置の表示板としては、
通常ガラス等の透光性基板上に透明な平行電極群を形成
し、その上に第１誘電体層、ＥＬ発光体層、第２誘電体
層を順次積層し、さらにその上に背面平行電極群を下層
の透明平行電極群に直交する配置で積層して形成する。The display board of the solid-state image display device used here is:
Usually, a transparent parallel electrode group is formed on a transparent substrate such as glass, and a first dielectric layer, an EL light emitting layer, and a second dielectric layer are sequentially laminated thereon, and then a rear parallel electrode is further layered on top of that. The electrodes are stacked in an arrangement perpendicular to the underlying transparent parallel electrode group.
一般に透明平行電極としては平滑なガラス基板上に酸化
錫を被着するなどにより形成され企。これに直交し、対
問する背面電極としてはアルミニウムが真空蒸着などに
より形成される。Generally, transparent parallel electrodes are formed by depositing tin oxide on a smooth glass substrate. Aluminum is formed by vacuum evaporation or the like as a back electrode which is perpendicular to this and is opposed to this.
第１誘電体層や第２誘電体層に用いる材料としては、：
Ｊ、電率が大きく、絶縁破壊電界強度が大きい材料が低
電圧駆動に適している。前者は、主に透明電極および背
面電極により印加される電圧の、より多（の割合をＥＬ
発光体層に印加し、駆動電圧を低下させるためであり、
後者は主に絶縁破壊を起こさない安定な動作のために重
要である。このような低電圧で駆動ができ、安定性の優
れた薄膜ＥＬ素子を構成するための誘電体層としては誘
電率が大きな酸化物誘電体薄膜（特開昭５６−４５５９
５参照）の方が法が誘電率が小さな酸化珪素や窒化珪素
（特公昭５３−４２３９８号公報）より適しており、酸
化物誘電体薄膜を用いた薄膜ＥＬ素子が広く研究されて
いる。Materials used for the first dielectric layer and the second dielectric layer include:
J. Materials with high electrical conductivity and high dielectric breakdown field strength are suitable for low voltage driving. The former mainly increases the proportion of the voltage applied by the transparent electrode and the back electrode.
This is to apply it to the light emitter layer and reduce the driving voltage.
The latter is mainly important for stable operation without causing dielectric breakdown. An oxide dielectric thin film with a large dielectric constant (Japanese Patent Laid-Open No. 56-4559
5) is more suitable than silicon oxide or silicon nitride (Japanese Patent Publication No. 53-42398), which have a small dielectric constant, and thin film EL devices using oxide dielectric thin films are being widely studied.
発明が解決しようとする問題点
マトリクス状電極を有する薄膜ＥＬ素子を、−斉反転方
式により線順次駆動（特公昭５５−２７３５４号公報）
し、■走査期間で２回の発光を行わせる場合、透明電極
と背面電極に挾まれた各絵素においては、正極性のパル
スが印加されてがら逆方向のパルスが印加されるまでの
時間と、逆極性のパルスが印加されてから正極性のパル
スが印加されるまでの時間が異なる。このような正・逆
パルスの位相が異なる駆動法により従来技術による薄膜
ＥＬ素子を長時間駆動した場合表示情報に応じて発光さ
せた絵素では、発光させなかった絵素と比較して、発光
開始電圧が数ボルト変動するという問題点があった。Problems to be Solved by the Invention Line-sequential driving of a thin-film EL element having matrix-like electrodes using a simultaneous inversion method (Japanese Patent Publication No. 55-27354)
However, when emitting light twice in the scanning period, the time from when a pulse of positive polarity is applied to when a pulse of opposite direction is applied to each pixel sandwiched between the transparent electrode and the back electrode. The time from when a pulse of opposite polarity is applied to when a pulse of positive polarity is applied is different. When a conventional thin film EL element is driven for a long time using such a driving method in which the phases of forward and reverse pulses are different, the pixel that emitted light according to display information has a lower luminescence rate than the pixel that does not emit light. There was a problem in that the starting voltage varied by several volts.
本発明の目的は、前記問題点を解決し、位相が異なる交
流パルスや正・逆方向の撮部が異なる交流パルスで駆動
しても、長期間に渡り安定した動作が可能な薄膜ＥＬ素
子およびその製造方法を提供することにある。An object of the present invention is to solve the above-mentioned problems and to provide a thin film EL element which can operate stably over a long period of time even when driven by AC pulses with different phases or with different AC pulses in the forward and reverse directions. The object of the present invention is to provide a manufacturing method thereof.
問題点を解決するための手段
本発明においては、透光性基板上に、透明電極、第１誘
電体層、ＥＬ発光体層、第２誘電体層、および背面電極
を順次積層してなる薄膜ＥＬ素子において、前記第１誘
電体層および前記第２誘電体層の前記ＥＬ発光体層側の
部分は、電子ビーム蒸着法を用いて厚さ１０ｎｍ以上、
２００ｎｍ以下の硫化カルシウム薄膜で構成し、面記第
１誘電体層の前記透明電極側の部分は比誘電率が１５以
上の酸化物誘電体薄膜で構成し、前記第２誘電体層の背
面電極側の部分は酸化物誘電体薄膜で構成する。Means for Solving the Problems In the present invention, a thin film is formed by sequentially laminating a transparent electrode, a first dielectric layer, an EL light emitter layer, a second dielectric layer, and a back electrode on a transparent substrate. In the EL element, portions of the first dielectric layer and the second dielectric layer on the EL light emitting layer side are formed to have a thickness of 10 nm or more using an electron beam evaporation method;
A thin film of calcium sulfide with a thickness of 200 nm or less is formed, a portion of the first dielectric layer facing the transparent electrode is formed of a thin oxide dielectric film with a relative dielectric constant of 15 or more, and a back electrode of the second dielectric layer is formed of a thin film of calcium sulfide with a thickness of 200 nm or less. The side portion is composed of an oxide dielectric thin film.
また製造工程においては、前記ＥＬ発光体層を５００℃
以上、６ｏｏ℃以下の温度で加熱処理する。In addition, in the manufacturing process, the EL light emitting layer is heated to 500°C.
The heat treatment is performed at a temperature of 60° C. or lower.
作用
発光開始電圧の変動は、ＥＬ発光体層と誘電体層との界
面に種々の深さのトラップ準位が形成されることや、Ｅ
Ｌ発光体層と誘電体層との反応により生じるものと考え
られる。ＥＬ発光体層と誘電体層との間に１０ｎｍ以上
２００ｎｍ以下の硫化カルシウム薄膜を介在させること
により、トラップ準位の形成が抑制され、長期間に渡り
安定した動作が可能になったものと考えられる。。Fluctuations in the action emission starting voltage are caused by the formation of trap levels of various depths at the interface between the EL phosphor layer and the dielectric layer, and by the E
It is thought that this is caused by a reaction between the L emitter layer and the dielectric layer. It is believed that by interposing a calcium sulfide thin film of 10 nm or more and 200 nm or less between the EL emitter layer and the dielectric layer, the formation of trap levels is suppressed and stable operation over a long period of time is possible. It will be done. .
実施例
第１図は本発明にががる薄膜ＥＬ素子の製造方法の一実
施例により作製しに薄膜ＥＬ素子の断面構造を示す。図
において、１はガラス基板であリ、コーニング７０５９
ガラスを用いた。ガラス基板１上に、スパッタリング法
により厚さ２００ｎｍの錫添加酸化インジウム薄膜を形
成し、ホトリソグラフィ技術によりストライブ状に加工
し透明電極２とした。その上にチタンジルコン酸ストロ
ンチウム［Ｓｒ （ＴｉｘＺｒｌ−ｘ）０＋ ］を基板
温度４００℃でスパッタリングすることにより厚さ６０
０ｎｍの酸化物誘電体薄膜３を形成した。さらにその上
に、硫化カルシウムペレットを蒸発源として基板温度３
００℃で電子ビーム蒸着することにより厚さ５０ｎｍの
硫化カルシウム薄膜４を形成した。酸化物誘電体薄膜３
と硫化カルシウム薄膜４により、第１誘電体層５が形成
される。硫化カルシ【クムＮ ｍ ４の上には、共蒸着
法により、基板温度２００℃で、厚さ４００ｎｍのマン
ガン添加硫化亜鉛薄膜からなるＥＬ発光体層６を形成し
た。その後真空中・４５０℃で１時間熱処理の後、その
上に再び硫化カルシウムベレットを蒸発源として基板温
度３００℃で電子ビーム蒸着することにより厚さ５０ｎ
ｍの硫化ツノルシウム薄膜７を形成した。その上にタン
タル酸バリウム［１３ａＴａ２０６１焼結体を、基板温
度１００℃でスパッタリングすることにより厚さ２００
ｎｍの酸化物誘電体薄膜８を形成した。酸化物誘電体薄
膜Ｓと硫化カルシウム薄膜７により、第２誘電体層９が
形成される。最後にその上に厚さ１５０ｎｍのＡＩを真
空蒸着し、ホトリソグラフィ技術により、透明電極２と
は直交する方向にストライブ状の背面電極１０を形成し
、薄膜ＥＬ素子を完成した。Embodiment FIG. 1 shows a cross-sectional structure of a thin film EL device manufactured by an embodiment of the method for manufacturing a thin film EL device according to the present invention. In the figure, 1 is a glass substrate, Corning 7059
Glass was used. A tin-doped indium oxide thin film having a thickness of 200 nm was formed on a glass substrate 1 by a sputtering method, and was processed into a stripe shape by a photolithography technique to form a transparent electrode 2. On top of that, strontium titanium zirconate [Sr (TixZrl-x)0+] was sputtered at a substrate temperature of 400°C to a thickness of 60°C.
A 0 nm oxide dielectric thin film 3 was formed. Furthermore, on top of that, calcium sulfide pellets are used as an evaporation source and the substrate temperature is 3.
A calcium sulfide thin film 4 having a thickness of 50 nm was formed by electron beam evaporation at 00°C. Oxide dielectric thin film 3
A first dielectric layer 5 is formed by the calcium sulfide thin film 4 and the calcium sulfide thin film 4 . On the calcium sulfide [cum N m 4 ], an EL luminescent layer 6 made of a manganese-added zinc sulfide thin film having a thickness of 400 nm was formed by co-evaporation at a substrate temperature of 200°C. After that, heat treatment was performed in vacuum at 450°C for 1 hour, and then electron beam evaporation was performed again using calcium sulfide pellets as an evaporation source at a substrate temperature of 300°C to a thickness of 50 nm.
A thin film 7 of tunorsium sulfide having a thickness of m was formed. On top of that, a barium tantalate [13aTa2061 sintered body was sputtered at a substrate temperature of 100°C to a thickness of 200°C.
A nanometer-thick oxide dielectric thin film 8 was formed. A second dielectric layer 9 is formed by the oxide dielectric thin film S and the calcium sulfide thin film 7. Finally, AI with a thickness of 150 nm was vacuum-deposited thereon, and a striped back electrode 10 was formed in a direction perpendicular to the transparent electrode 2 using photolithography technology, thereby completing a thin film EL device.
本発明の一実施例にかかる薄１摸ＥＬ素子と、本発明の
一実施例にかかる４膜ＥＬ素子から硫化）１ルシウノ２
、薄膜４および７を除いた従来のｒｆＪ膜ＥＬ素子とに
、第２図に示すような位相の異なる交流パルス電圧を印
加し、発光開始電圧の経時変化を測定したところ、第３
図に示すように、従来の薄１摸ＥＬ素子では１００時間
で約６％発光開始電圧が低下したのに対しく第２図ａ）
、本発明の薄膜ＥＬ素子では１％以下であった。A thin 1-layer EL device according to an embodiment of the present invention and a 4-film EL device according to an embodiment of the present invention (sulfurized) 1 Luciuno 2
When we applied alternating current pulse voltages with different phases as shown in FIG.
As shown in the figure, the luminescence starting voltage decreased by about 6% in 100 hours with the conventional thin 1-piece EL element, whereas in Figure 2 a)
, was less than 1% in the thin film EL device of the present invention.
本実施例では硫化ツノルシウム薄ｌＩＱをＥＬ発光体層
の両（１１１１に形成したが、第１誘電体層側だけに形
成した場合でも、効果は多少落ちるが有効であった。ま
た硫化カルシウム薄膜の形成に電子ビーム蒸着法を用い
たが、他の方法例えばスパッタリング法では膜が剥離を
起こし易く、さらにＥＬ発光体層の熱処理温度が５００
℃以上では薄膜ＥＬ素子の発光開始電圧の経時変化を抑
制する効果が消滅してしまい使用できなかった。In this example, thin lIQ of tunorsium sulfide was formed on both sides (1111) of the EL emitter layer, but it was still effective even if it was formed only on the first dielectric layer side, although the effect was somewhat lower. Electron beam evaporation was used for the formation, but when using other methods such as sputtering, the film tends to peel off, and the heat treatment temperature of the EL light emitting layer is 500°C.
If the temperature exceeds .degree. C., the effect of suppressing the change over time in the light emission starting voltage of the thin film EL device disappears, making it unusable.
硫化カルシウム薄膜の厚さは、１０ｎｍより薄い場合は
、発光開始電圧の経時変化を抑制する効果が少な（，２
００ｎｌＩｌより厚くした場合は、硫化カルシウム薄膜
の誘電率は小さいため、厚（するほど薄膜ＥＬ素子を駆
動するのに必要な電圧が高くなり、駆動用のＩＣが高価
なものとなって好ましくない。If the thickness of the calcium sulfide thin film is less than 10 nm, it will have little effect in suppressing the change in luminescence starting voltage over time (,2
If it is thicker than 00nlIl, the dielectric constant of the calcium sulfide thin film is small, so the thicker the film, the higher the voltage required to drive the thin film EL element, and the more expensive the driving IC becomes, which is undesirable.
ＥＬ発光体層６は活性物質を含む硫化亜鉛（ＺｎＳ）を
用いることができる。活性物質としてはＭｎ、Ｃｕ、Ａ
ｇ、Ａｕ、ＴｂＦ３．ＳｍＦ３ 、ＥｒＦｓ 、ＴｍＦ
３ 、ＤｙＦｓ 、ＰｒＦｓ 、ＥｕＦｓなどが適当で
ある。ＥＬ発光体層６は硫化亜鉛以外のものでもよく、
たとえば活性物質を含むＳｒＳやＣａＳなどの電場発光
を示すものであればよい。The EL luminescent layer 6 can be made of zinc sulfide (ZnS) containing an active substance. Active substances include Mn, Cu, A
g, Au, TbF3. SmF3, ErFs, TmF
3, DyFs, PrFs, EuFs, etc. are suitable. The EL luminescent layer 6 may be made of other than zinc sulfide,
For example, any material that exhibits electroluminescence, such as SrS or CaS containing an active substance, may be used.
第１誘電体層に用いる酸化物誘電体薄膜の厚さは、第２
：Ｊ＋電体層より厚くした方が、絶縁破壊に対する安定
性が高い。厚い第１誘電体層を用いるには、酸化物誘電
体薄膜の比誘電率が大きいほど好ましく、実験結果から
は１５以上が好ましかった。比誘電率が１５より小さい
場合、１００〜１８０Ｖの電圧で安定に駆動できる薄膜
ＥＬ素子を形成するのは困難であった。このような酸化
物誘電体薄膜としては、ペロブスカイト形の結晶構造を
含む薄膜が、絶縁破壊電圧の面からも適していた。その
中でも５ｒＴｉＣ）＋ ｌ ＳｒｘＭｇｌ−ｘＴｉＯ２
，５ｒＴｉｘＺｒｌ−ｘｉ３．あるいはＳ ｒ ｘ Ｍ
ｇ１−ｘＴｉｙＺｒｌ−ｙｏｓなどのチタン酸ストロン
チウム系の薄膜を、第１誘電体層の酸化物誘電体薄膜に
用いることにより極めて安定な薄膜ＥＬ素子を構成する
ことができた。The thickness of the oxide dielectric thin film used for the first dielectric layer is the same as that for the second dielectric layer.
:The thicker it is than the J+ electric layer, the higher the stability against dielectric breakdown. In order to use a thick first dielectric layer, it is preferable that the dielectric constant of the oxide dielectric thin film is as large as possible, and from experimental results, a dielectric constant of 15 or more is preferable. When the dielectric constant is smaller than 15, it is difficult to form a thin film EL element that can be stably driven at a voltage of 100 to 180V. As such an oxide dielectric thin film, a thin film containing a perovskite crystal structure is suitable from the viewpoint of dielectric breakdown voltage. Among them, 5rTiC) + l SrxMgl-xTiO2
, 5rTixZrl-xi3. Or S r x M
By using a strontium titanate-based thin film such as g1-xTiyZrl-yos as the oxide dielectric thin film of the first dielectric layer, an extremely stable thin film EL device could be constructed.
第２誘電体層の酸化物誘電体薄膜の一つとしては、比誘
電率が約２２のタンタル酸バリウム系薄膜が適しており
、タンタル酸バリウム系薄膜を川いることにより、伝播
性絶縁破壊を抑制するこ乏ができ、信頼性の高い薄膜Ｅ
Ｌ素子を形成する事ができた。As one of the oxide dielectric thin films of the second dielectric layer, a barium tantalate thin film with a relative dielectric constant of about 22 is suitable, and by using a barium tantalate thin film, propagating dielectric breakdown can be prevented. Thin film E with low resistance and high reliability
We were able to form an L element.
発明の効果
以上のように本発明によれば、低電圧駆動が可能であり
、長時間の駆動によっても発光開始電圧の変動が極めて
小さい薄膜ＥＬ素子を再現性良（形成することができ、
コンピュータ端末などの薄形、高品位ディスプレイなど
に広く利用でき、実用的価値が大きい。Effects of the Invention As described above, according to the present invention, it is possible to form a thin film EL element with good reproducibility, which can be driven at a low voltage and has extremely small fluctuations in emission starting voltage even when driven for a long time.
It can be widely used in thin, high-quality displays such as computer terminals, and has great practical value.
第１図は本発明にかかる薄膜ＥＬ素子の製造方法の一実
施例により作製した薄膜ＥＬ素子の構成を示す断面図、
第２図は薄膜ＥＬ素子の駆動電圧波形を示す図、第３図
は発光開始電圧の経時変化を示す図である。
■・・・ガラス基板、 ２・・・透明電極、 ３・・・
酸化物誘電体薄膜、 ４・・・硫化カルシウム薄膜、５
・・・第１誘電体賢、 ６・・・ＥＬ発光体層、７・・
・硫化カルシウム薄膜、 ８・・・酸化物誘電体薄膜、
９・・・第２誘電体層、 １０・・・背面電極。FIG. 1 is a sectional view showing the structure of a thin film EL device manufactured by an embodiment of the method for manufacturing a thin film EL device according to the present invention;
FIG. 2 is a diagram showing the drive voltage waveform of the thin film EL element, and FIG. 3 is a diagram showing the change over time in the light emission starting voltage. ■...Glass substrate, 2...Transparent electrode, 3...
Oxide dielectric thin film, 4... Calcium sulfide thin film, 5
...first dielectric layer, 6...EL light emitting layer, 7...
・Calcium sulfide thin film, 8... Oxide dielectric thin film,
9... Second dielectric layer, 10... Back electrode.
Claims (5)
Ｌ発光体層、第２誘電体層、および背面電極を順次積層
してなる薄膜ＥＬ素子において、前記第１誘電体層およ
び前記第２誘電体層の前記ＥＬ発光体層側の部分は、厚
さ１０ｎｍ以上、２００ｎｍ以下の硫化カルシウム薄膜
で構成し、前記第１誘電体層の前記透明電極側の部分は
比誘電率が１５以上の酸化物誘電体薄膜で構成し、前記
第２誘電体層の背面電極側の部分は酸化物誘電体薄膜で
構成したことを特徴とする薄膜ＥＬ素子。(1) A transparent electrode, a first dielectric layer, and an E
In a thin film EL device formed by sequentially laminating an L emitter layer, a second dielectric layer, and a back electrode, portions of the first dielectric layer and the second dielectric layer on the EL emitter layer side have a thickness of The transparent electrode side portion of the first dielectric layer is composed of an oxide dielectric thin film having a dielectric constant of 15 or more, and the second dielectric layer A thin film EL device characterized in that a portion on the back electrode side of the device is composed of an oxide dielectric thin film.
カイト形構造の結晶部分を有することを特徴とする特許
請求の範囲第１項記載の薄膜ＥＬ素子。(2) The thin film EL device according to claim 1, wherein the oxide dielectric thin film of the first dielectric layer has a crystalline portion having a perovskite structure.
トロンチウム系薄膜で構成したことを特徴とする特許請
求の範囲第１項記載の薄膜ＥＬ素子。(3) The thin film EL device according to claim 1, wherein the oxide dielectric thin film of the first dielectric layer is composed of a strontium titanate thin film.
バリウム系薄膜を含むことを特徴とする特許請求の範囲
第１項、第２項または第３項のいずれかに記載の薄膜Ｅ
Ｌ素子。(4) The thin film E according to any one of claims 1, 2, or 3, wherein the oxide dielectric thin film of the second dielectric layer includes a barium tantalate thin film.
L element.
成し、その上にＥＬ発光体層を積層して形成する工程と
、前記ＥＬ発光体層を５００℃以上、６００℃以下の温
度で加熱処理する工程とを含むことを特徴とする薄膜Ｅ
Ｌ素子の製造方法。(5) A step of forming a calcium sulfide thin film by electron beam evaporation and laminating an EL light emitting layer thereon, and heating the EL light emitting layer at a temperature of 500°C or higher and 600°C or lower. A thin film E characterized by including the step of
Method for manufacturing L element.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61209898A JPS6366897A (en) | 1986-09-05 | 1986-09-05 | Thin film el device and manufacture of the same |
| EP87112823A EP0258888B1 (en) | 1986-09-05 | 1987-09-02 | Thin film electroluminescence display device |
| DE8787112823T DE3779977T2 (en) | 1986-09-05 | 1987-09-02 | THICK LAYER ELECTROLUMINESCENT DISPLAY DEVICE. |
| US07/093,263 US4869973A (en) | 1986-09-05 | 1987-09-04 | Thin film electroluminescence display device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61209898A JPS6366897A (en) | 1986-09-05 | 1986-09-05 | Thin film el device and manufacture of the same |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6366897A true JPS6366897A (en) | 1988-03-25 |
Family
ID=16580471
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61209898A Pending JPS6366897A (en) | 1986-09-05 | 1986-09-05 | Thin film el device and manufacture of the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6366897A (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5745037A (en) * | 1980-07-18 | 1982-03-13 | Snia Viscosa | Foaming substance using unsaturated polyester resin as basis and its manufacture |
| JPS60257096A (en) * | 1984-06-01 | 1985-12-18 | 松下電器産業株式会社 | Thin film el element |
| JPS6142895A (en) * | 1984-08-01 | 1986-03-01 | 松下電器産業株式会社 | Thin film el panel |
| JPS61121290A (en) * | 1984-11-19 | 1986-06-09 | 松下電器産業株式会社 | Manufacture of thin film el element |
-
1986
- 1986-09-05 JP JP61209898A patent/JPS6366897A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5745037A (en) * | 1980-07-18 | 1982-03-13 | Snia Viscosa | Foaming substance using unsaturated polyester resin as basis and its manufacture |
| JPS60257096A (en) * | 1984-06-01 | 1985-12-18 | 松下電器産業株式会社 | Thin film el element |
| JPS6142895A (en) * | 1984-08-01 | 1986-03-01 | 松下電器産業株式会社 | Thin film el panel |
| JPS61121290A (en) * | 1984-11-19 | 1986-06-09 | 松下電器産業株式会社 | Manufacture of thin film el element |
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