JP2621057B2 - Thin film EL element - Google Patents
Thin film EL elementInfo
- Publication number
- JP2621057B2 JP2621057B2 JP2321411A JP32141190A JP2621057B2 JP 2621057 B2 JP2621057 B2 JP 2621057B2 JP 2321411 A JP2321411 A JP 2321411A JP 32141190 A JP32141190 A JP 32141190A JP 2621057 B2 JP2621057 B2 JP 2621057B2
- Authority
- JP
- Japan
- Prior art keywords
- zns
- light
- luminous body
- light emitter
- insulator layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
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- Electroluminescent Light Sources (AREA)
Description
【発明の詳細な説明】 ［産業上の利用分野］ この発明は交流電界印加によりEL発光を呈する薄膜EL
素子に係わり、特に、駆動電圧が等しい２色発光薄膜EL
素子に関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a thin film EL which emits EL light when an AC electric field is applied.
Two-color light-emitting thin film EL with the same driving voltage
Related to the element.
［従来の技術］ 電圧を印加すると物質が蛍光を発する現象すなわちエ
レクトロルミネッセンス（EL）を利用したディスプレイ
に用いられる薄膜EL素子が知られている。このような薄
膜EL素子の２色発光のものの例を第２図を参照して説明
する。2. Description of the Related Art There is known a thin film EL device used for a display utilizing a phenomenon in which a substance emits fluorescence when a voltage is applied, that is, electroluminescence (EL). An example of such a thin-film EL device that emits two colors will be described with reference to FIG.
図に示すように、ガラス基板１の上に酸化インジウム
・すず膜等の透明電極２が積層されている。As shown in the figure, a transparent electrode 2 such as an indium oxide / tin film is laminated on a glass substrate 1.
さらに、透明電極２の上に第１絶縁体層３か積層され
ている。Further, a first insulator layer 3 is laminated on the transparent electrode 2.
4aは黄橙色発光を呈するZnS:Mn発光体であり、第１絶
縁体層３上にメタルマスクを用いた蒸着あるいはフォト
エッチング加工により所定パターンに形成されている。Reference numeral 4a denotes a ZnS: Mn luminous body that emits yellow-orange light, and is formed in a predetermined pattern on the first insulator layer 3 by vapor deposition using a metal mask or by photoetching.
4bはZnS:Re発光体であり、ZnS:Mn発光体4aと同様に、
第１絶縁体層３上にメタルマスクを用いた蒸着あるいは
フォトエッチング加工により所定パターンに形成されて
いる。上記のReはレアアース即ち希土類金属を表し、以
下の説明でも同様である。4b is a ZnS: Re luminous body, similar to the ZnS: Mn luminous body 4a,
A predetermined pattern is formed on the first insulator layer 3 by vapor deposition using a metal mask or by photoetching. The above Re represents a rare earth, that is, a rare earth metal, and the same applies to the following description.
ZnS:Mn発光体4a、ZnS:Re発光体4bおよび第１絶縁層３
を覆うように第２絶縁体層５が積層され、第２絶縁体層
５の上に夫々の発光体に対応して金属膜の背面電極６が
蒸着されている。背面電極６と透明電極２の間に電圧を
印加することにより、これら電極間に挟まれた部分の発
光体4aおよび4bが発光する。ZnS: Mn light emitter 4a, ZnS: Re light emitter 4b and first insulating layer 3
A second insulator layer 5 is laminated so as to cover the second light emitting element, and a back electrode 6 of a metal film is deposited on the second insulator layer 5 in correspondence with each light emitter. When a voltage is applied between the back electrode 6 and the transparent electrode 2, the luminous bodies 4a and 4b between the electrodes emit light.
［発明が解決しようとする問題点］ 上記、従来の薄膜EL素子は、ZnS:Mn発光体4aとZnS:Re
発光体4bとの駆動電圧が異なり、特に、ZnS:Re発光体の
駆動電圧が高く、電源の構成が複雑となる欠点があっ
た。[Problems to be Solved by the Invention] The above-mentioned conventional thin-film EL devices are composed of a ZnS: Mn luminous body 4a and a ZnS: Re
The driving voltage of the light emitting body 4b is different from that of the light emitting body 4b. In particular, the driving voltage of the ZnS: Re light emitting body is high, and the configuration of the power supply is complicated.
また、両発光体の発光輝度に差があるという欠点があ
った。In addition, there is a disadvantage that there is a difference between the light emission luminances of the two light emitters.
この発明は上記した点に鑑みなされたものであって、
その目的とするところは、駆動電圧が同一である２色発
光の薄膜EL素子を提供することである。The present invention has been made in view of the above points,
An object of the present invention is to provide a two-color light emitting thin film EL device having the same driving voltage.
また、この発明の他の目的は発光輝度が同一である２
色発光の薄膜EL素子を提供することである。Another object of the present invention is to provide a light emitting device having the same emission luminance.
An object of the present invention is to provide a color light emitting thin film EL device.
［課題を解決するための手段］ この発明の薄膜EL素子は、透明基板の上に透明電極、
第１の絶縁体層、EL発光を呈する発光層、第２の絶縁体
層、背面電極を順次積層してなる薄膜EL素子において、
ZnS:Mn発光体を第１の絶縁体層上に所定パターンに形成
し、ZnS:Re発光体をZnS:Mn発光体パターン上および第１
の絶縁体層上に形成し、ZnS:Re発光体とZnS:Mn発光体と
が重なった部分の発光駆動電圧とZnS:Re発光体のみの発
光駆動電圧とが同一となるように発光層を構成するとと
もに第１および第２の絶縁体層の少なくとも一方を強誘
電体で形成したものである。[Means for Solving the Problems] The thin-film EL device of the present invention comprises a transparent electrode on a transparent substrate,
In a thin film EL device in which a first insulator layer, a light emitting layer exhibiting EL light emission, a second insulator layer, and a back electrode are sequentially laminated,
A ZnS: Mn light emitter is formed in a predetermined pattern on the first insulator layer, and a ZnS: Re light emitter is formed on the ZnS: Mn light emitter pattern and in the first pattern.
Formed on the insulator layer of the ZnS: Re luminous body and the ZnS: Mn luminous body so that the luminous drive voltage of the overlapping portion and the luminous drive voltage of the ZnS: Re luminous body alone become the same. In one embodiment, at least one of the first and second insulator layers is formed of a ferroelectric material.
また、前記薄膜EL素子において、ZnS:Mn発光体とZnS:
Re発光体との発光輝度を同一とするようにMn量を調整し
たものである。Further, in the thin-film EL device, ZnS: Mn luminous body and ZnS:
The Mn content was adjusted so that the light emission luminance with the Re light emitter was the same.
［作用］ ZnS:Mn発光体はZnS:Re発光体に比べ発光駆動電圧が低
いが、ZnS:Mn発光体の上にZnS:Re発光体を重ねることに
よりこれら積層体の駆動電圧が高くなる。従って、ZnS:
Re発光体とZnS:Mn発光体との形成条件を調整することに
よりZnS:Mn発光体にZnS:Re発光体が重なった部分とZnS:
Re発光体の部分の発光駆動電圧を同一とすることができ
る。[Operation] The ZnS: Mn light emitter has a lower light emission drive voltage than the ZnS: Re light emitter, but when the ZnS: Re light emitter is overlaid on the ZnS: Mn light emitter, the drive voltage of these laminates becomes higher. Therefore, ZnS:
By adjusting the formation conditions of the Re luminous body and the ZnS: Mn luminous body, the ZnS: Mn luminous body overlaps the ZnS: Re luminous body with ZnS:
The light emission drive voltage of the Re light emitter can be the same.
また、ZnS:Mn発光体にZnS:Re発光体が重なると全体の
発光駆動電圧は高くなるが、絶縁体層に強誘電体を用い
ることにより発光駆動電圧の上昇が押さえられる。When the ZnS: Mn light emitter overlaps the ZnS: Re light emitter, the overall light emission drive voltage increases. However, the use of a ferroelectric material in the insulator layer suppresses the increase in the light emission drive voltage.
さらに、ZnS:Mn発光体上のZnS:Re発光体はZnS:Mn発光
体に比べ発光効率が悪く、発光輝度が低いが、ZnS:Re発
光体を最大発光輝度となるように形成し、ZnS:Mn発光体
のMnドープ量を最大発光輝度のポイントからずらすよう
に調整して両発光部分の発光輝度を同一となるようにす
ることができる。Further, the ZnS: Re luminous body on the ZnS: Mn luminous body has a lower luminous efficiency and lower luminous luminance than the ZnS: Mn luminous body, but the ZnS: Re luminous body is formed so as to have the maximum luminous luminance. : The Mn doping amount of the Mn light emitter is adjusted so as to be shifted from the point of the maximum light emission luminance, so that the light emission luminance of both light emitting portions can be the same.
［実施例］ この発明の実施例である薄膜EL素子を第１図に基づい
て説明する。[Example] A thin-film EL device according to an example of the present invention will be described with reference to FIG.
図に示すように、ガラス基板１の上に酸化インジウム
・すず膜等の透明電極２が積層されている。As shown in the figure, a transparent electrode 2 such as an indium oxide / tin film is laminated on a glass substrate 1.
さらに、透明電極２の上に第１絶縁体層３が積層され
ている。第１絶縁体層３はチタン酸バリウムまたはチタ
ン酸ストロンチウムの強誘電体で形成されている。Further, a first insulator layer 3 is laminated on the transparent electrode 2. The first insulator layer 3 is formed of a ferroelectric material of barium titanate or strontium titanate.
4aは黄橙色発光を呈するZnS:Mn発光体であり、第１絶
縁体層３上にメタルマスクを用いた蒸着あるいはフォト
エッチング加工により所定パターンに形成されている。Reference numeral 4a denotes a ZnS: Mn luminous body that emits yellow-orange light, and is formed in a predetermined pattern on the first insulator layer 3 by vapor deposition using a metal mask or by photoetching.
ZnS:Re発光体4bは、ZnS:Mn発光体4a上および第１絶縁
体層３上に蒸着により積層されている。The ZnS: Re light emitter 4b is laminated on the ZnS: Mn light emitter 4a and the first insulator layer 3 by vapor deposition.
ZnS:Re発光体4bを覆うようにチタン酸バリウムまたは
チタン酸ストロンチウムの第２絶縁体層５が積層され、
第２絶縁体層５の上に夫々の発光体に対応して金属膜の
背面電極６が蒸着されている。背面電極６と透明電極２
の間に電圧を印加することにより、これら電極間に挟ま
れた部分の発光体が発光する。A second insulator layer 5 of barium titanate or strontium titanate is laminated so as to cover the ZnS: Re luminous body 4b,
A back electrode 6 of a metal film is deposited on the second insulator layer 5 corresponding to each light emitter. Back electrode 6 and transparent electrode 2
By applying a voltage between the electrodes, the luminous body in the portion sandwiched between these electrodes emits light.
ZnS:Re発光体4bとZnS:Mn発光体4aおよびZnS:Re発光体
4bの積層体との発光駆動電圧が同一となるように蒸着条
件が調整され、また、ZnS:Re発光体を最大発光輝度とな
るように形成し、ZnS:Mn発光体のMnドープ量を最大発光
輝度のポイントからずらすように調整して両発光部分の
発光輝度を同一となるように調整されている。ZnS: Re phosphor 4b and ZnS: Mn phosphor 4a and ZnS: Re phosphor
The deposition conditions were adjusted so that the light emission drive voltage with the laminate of 4b was the same, and a ZnS: Re light emitter was formed so as to have the maximum light emission luminance, and the Mn doping amount of the ZnS: Mn light emitter was maximized. The light emission luminance is adjusted so as to be shifted from the point of the light emission luminance so that the light emission luminance of both light emission portions becomes the same.
［発明の効果］ この発明の薄膜EL素子によれば、ZnS:Mn発光体とZnS:
Re発光体を同一平面上で同一駆動電圧で発光させるので
駆動電源回路のコストダウンが図れる。しかも、絶縁体
層に強誘電体薄膜を使用することにより駆動電圧の上昇
が押さえられる。[Effects of the Invention] According to the thin film EL device of the present invention, the ZnS: Mn luminous body and the ZnS:
Since the Re light emitters emit light at the same drive voltage on the same plane, the cost of the drive power supply circuit can be reduced. In addition, by using a ferroelectric thin film for the insulator layer, an increase in driving voltage can be suppressed.
また、ZnS:Mn発光体とZnS:Re発光体との発光輝度を同
一としたためバランスがよく表示品位が向上する。In addition, since the light emission luminance of the ZnS: Mn light emitter and that of the ZnS: Re light emitter are the same, the balance is good and the display quality is improved.
第１図はこの発明の実施例である薄膜EL素子を示す断面
図、第２図は従来の薄膜EL素子の例を示す断面図であ
る。 １……ガラス基板、２……透明電極、３……第１絶縁
層、4a……ZnS:Mn発光体、4b……ZnS:Re発光体、５……
第２絶縁体層、６……背面電極。FIG. 1 is a sectional view showing a thin-film EL device according to an embodiment of the present invention, and FIG. 2 is a sectional view showing an example of a conventional thin-film EL device. DESCRIPTION OF SYMBOLS 1 ... Glass substrate, 2 ... Transparent electrode, 3 ... First insulating layer, 4a ... SnS: Mn light emitter, 4b ... ZnS: Re light emitter, 5 ...
Second insulator layer, 6... Back electrode.
Claims (2)
層、EL発光を呈する発光層、第２の絶縁体層、背面電極
を順次積層してなる薄膜EL素子において、ZnS:Mn発光体
を第１の絶縁体層上に所定パターンに形成し、ZnS:Re発
光体をZnS:Mn発光体パターン上および第１の絶縁体層上
に形成し、ZnS:Re発光体とZnS:Mn発光体とが重なった部
分の発光駆動電圧とZnS:Re発光体のみの発光駆動電圧と
が同一となるように発光層を構成するとともに第１およ
び第２の絶縁体層の少なくとも一方を強誘電体で形成し
た薄膜EL素子。A thin-film EL device comprising a transparent electrode, a first insulator layer, a light-emitting layer exhibiting EL emission, a second insulator layer, and a back electrode sequentially laminated on a transparent substrate, wherein ZnS: Mn A luminous body is formed in a predetermined pattern on the first insulator layer, a ZnS: Re luminous body is formed on the ZnS: Mn luminous body pattern and on the first insulator layer, and a ZnS: Re luminous body and ZnS: The light emitting layer is configured so that the light emission drive voltage of the portion where the Mn light emitter overlaps and the light emission drive voltage of only the ZnS: Re light emitter are the same, and at least one of the first and second insulator layers is strengthened. Thin-film EL element made of dielectric.
を同一とするようにMn量を調整した請求項１の薄膜EL素
子。2. The thin-film EL device according to claim 1, wherein the amount of Mn is adjusted so that the light emission luminance of the ZnS: Mn light emitter and that of the ZnS: Re light emitter are the same.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2321411A JP2621057B2 (en) | 1990-11-26 | 1990-11-26 | Thin film EL element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2321411A JP2621057B2 (en) | 1990-11-26 | 1990-11-26 | Thin film EL element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04190588A JPH04190588A (en) | 1992-07-08 |
| JP2621057B2 true JP2621057B2 (en) | 1997-06-18 |
Family
ID=18132250
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2321411A Expired - Lifetime JP2621057B2 (en) | 1990-11-26 | 1990-11-26 | Thin film EL element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2621057B2 (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2850820B2 (en) * | 1995-02-09 | 1999-01-27 | 株式会社デンソー | EL element |
| US6099979A (en) * | 1995-07-24 | 2000-08-08 | Denso Corporation | Electroluminescent display element and manufacturing method for manufacturing same |
| KR100748760B1 (en) * | 2003-06-13 | 2007-08-13 | 마츠시타 덴끼 산교 가부시키가이샤 | Luminescent device, display device, and display device control method |
-
1990
- 1990-11-26 JP JP2321411A patent/JP2621057B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH04190588A (en) | 1992-07-08 |
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