JPS6151947A - Semiconductor device - Google Patents

Abstract

PURPOSE:To enable the following projection to be used form positioning by allowing the titled device to have a dielectric strength larger than convention by a method wherein the insulation substrate is formed by forming a projection to lengthen the creeping distance between metallized patterns of both surfaces of an insulator at the peripheral edge of at least one surface of the insulator. CONSTITUTION:The peripheral edge of at least one surface of the insulator 1 in a semiconductor device having the insulation substrate with metallized patterns 2 and 2', to which semiconductor elements and heat dissipating fins are brazed, produced on both surfaces of the insulator 1 is provided with the projection 3 to lengthen the creeping distance between the metallized patterns 2 and 2' on both surfaces of the insulator 1. This manner allows a dielectric strength larger than convention without the increase in outer dimension. Further, in the case of brazing this insulation substrate to the heat dissipating fins, the positioning of the substrate can be simply carried out with good accuracy if a heat dissipating fin is previously provided with a projection large enout to fit between the projections 3 and 3.

Description

【発明の詳細な説明】 〔発明の技術分野〕 この分明は、半導体素子および放熱フィン等が装着さハ
る絶縁基板を有する半導体装置において、前記絶縁基板
の絶縁体の形状を改良することにより絶縁耐力の向上と
組立作業の面木化を図った半導体装置に関するものであ
る。Detailed Description of the Invention [Technical Field of the Invention] The present invention provides that, in a semiconductor device having an insulating substrate on which a semiconductor element, a heat dissipation fin, etc. are attached, insulation can be improved by improving the shape of the insulator of the insulating substrate. This invention relates to a semiconductor device that has improved durability and simplified assembly work.

〔従来技術〕[Prior art]

第１図（ａ）、　　（ｂ）は従来の半導体装置の絶縁基
板を示す平面図および断面図である。第１図において、
１は絶縁体、２ｍ、２４）は前記絶縁体１０両面に半導
体素子や放熱フィン等ｔはんだ等のろう材でろう付けで
きるようメッキを施したメタライズパターンである。こ
れにより絶縁基板が形成される。FIGS. 1(a) and 1(b) are a plan view and a sectional view showing an insulating substrate of a conventional semiconductor device. In Figure 1,
1 is an insulator, 2m and 24) are metallized patterns plated on both sides of the insulator 10 so that semiconductor elements, heat dissipation fins, etc. can be brazed with a brazing material such as T-solder. This forms an insulating substrate.

上記絶縁基板は一般に平板状構造をなしており、その形
状はろう付けされる半導体素子や放熱フィン等に合わせ
種々の形状がある。これらの絶縁基板の絶縁耐力はメタ
ライズパターン２＆、２ｂ間の沿面距＊（Ａ−Ｂ）によ
り決まることが一般的であるＣ（Ｃ−Ｄ）の絶縁耐力＞
（Ａ−Ｂ）の絶縁耐力の場合〕。The above-mentioned insulating substrate generally has a flat plate-like structure, and there are various shapes depending on semiconductor elements to be brazed, heat dissipation fins, etc. The dielectric strength of these insulating substrates is generally determined by the creepage distance * (A-B) between the metallized patterns 2 & 2b.Dielectric strength of C (C-D)>
In the case of dielectric strength of (A-B)].

絶縁耐力を高めるためには沿面距離を長くすれば効果が
あるか、半導体素子や放熱フィン等の特性、形状に種々
の制約かあり、沿面距離を長（できない場合が多い。ま
た、放熱フィンへろう付けする場合、絶縁基板が平板状
構造であるため、そのままでは位置決めが困離であり、
位置決め治具等を必要としていた。Is it effective to increase the creepage distance in order to increase the dielectric strength? There are various restrictions on the characteristics and shapes of semiconductor elements and heat radiation fins, etc., and it is often impossible to increase the creepage distance. When brazing, the insulating board has a flat structure, so it is difficult to position it as it is.
A positioning jig, etc. was required.

〔発明の概要〕[Summary of the invention]

この発明は、これらの欠点’！１’解決するためＫなさ
れたもので、絶縁体周縁部に凸部を設けて絶縁耐カン向
上せしめたものである。以下この発明の実施例について
説明する。This invention overcomes these drawbacks! In order to solve the problem of 1', a convex portion is provided on the peripheral edge of the insulator to improve the insulation resistance. Examples of the present invention will be described below.

〔発明の実施例〕[Embodiments of the invention]

第２図（ａ）、（ｂ）はこの発明の一実施例を示す絶縁
基板の平面図および断面図であり、１および２ｍ、２ｂ
は第１図と同じものである。３は前記絶縁体１０両面の
周縁部に設けた凸部である。FIGS. 2(a) and 2(b) are a plan view and a cross-sectional view of an insulating substrate showing an embodiment of the present invention, and 1 and 2m, 2b
is the same as in Figure 1. 3 is a convex portion provided on the peripheral edge portions of both sides of the insulator 10.

このように凸部３を形成した形状にすることによりメタ
ライズパターン２ａ、２ｂ間の沿面距離（Ａ’−Ｂ’）
は従来の絶縁基板に比し長（なることは明らかであり、
また、凸部３が上、下方向に形成されているため、外形
寸法を太き（せずＫ、従来以上の絶縁耐力を有すること
ができろ。By forming the convex portion 3 in this way, the creepage distance (A'-B') between the metallized patterns 2a and 2b can be increased.
is longer than conventional insulating substrates (it is clear that
In addition, since the convex portions 3 are formed upwardly and downwardly, the external dimensions are thicker and the dielectric strength is higher than that of the conventional structure.

さらに、この絶Ｍ＆基板を放熱フィンへろう付げする場
合、第３図に示すようＶＣ放熱フィン４にあらかじめ突
部３，３間Ｉ／ｃ欧合する大きさの凸部５を設げておけ
ば、絶縁基板の位置決めｙｆ：簡単に精度よく行うこと
かできる。Furthermore, when brazing this M& board to the radiation fin, as shown in FIG. If you do this, you can easily and accurately position the insulating substrate.

第４図（ａ）〜（ｃ）は絶縁体１に形成する凸部の形状
例を示す断面図で、第４図（ａ）は絶縁体１の一方の面
の端部周縁に凸部３を形成した例であり、第４図Ｃｂ）
は同じく両面の端部周縁に凸部３ｆｔ形成した例であり
、さらに第４図（Ｃ）は第２図℃説明した凸部３を絶縁
体１の一方の面に形成してそれぞれ絶縁基板を形成した
例である。FIGS. 4(a) to 4(c) are cross-sectional views showing examples of shapes of convex portions formed on the insulator 1, and FIG. This is an example of forming a
4(C) is an example in which a 3-ft convex portion is formed on the edge of both sides, and in addition, FIG. 4(C) shows an example in which the convex portion 3 described in FIG. This is an example of the formation.

なお、上記の絶縁基板の使用に際しては、半導体素子、
放熱フィン等の加工、９性、形状あるいは組立作業上の
制約がある場合に上記形状の適宜なものを選択すればよ
い。In addition, when using the above insulating substrate, semiconductor elements,
If there are restrictions on the processing, nature, shape, or assembly work of the radiation fins, an appropriate one of the above shapes may be selected.

〔分明の効果〕[Effect of understanding]

以上説明したよう和、この分明は、絶縁体の少なくとも
一方の面の周縁部分に絶縁体の両面のメタライズパター
ン間の沿面距離を長（するための凸部を形成して絶縁基
板を形成したので、従来の絶縁基板とほぼ同じ外形寸法
でありなから、従来以上の絶縁耐力ｔもだせることかで
きるはかりでなく、この凸部を位置決めに使用すること
により半導体装置の組立作業を簡素化できろ利点が得ら
れるものである。As explained above, this understanding is that an insulating substrate is formed by forming a protrusion on the peripheral edge of at least one side of the insulator to increase the creepage distance between the metallized patterns on both sides of the insulator. Since it has almost the same external dimensions as a conventional insulating substrate, it is possible to obtain a dielectric strength t higher than that of the conventional scale, and by using this protrusion for positioning, it is possible to simplify the assembly work of semiconductor devices. There are advantages to be gained.

【図面の簡単な説明】[Brief explanation of drawings]

第１図（ａ）、　　（ｂ）は従来の絶縁基板の平面図お
よび１７１線の断面図、第２図（ａ）、　　（ｂ）はこ
の発明の一実施例を示す絶縁基板の平面図および江−■
線の断面図、第３図はこの分明の使用態様を示すもので
、絶縁基体を放熱フィンへろう付けした断面図、第４図
＜＆）〜＜ｃ＞はこの発明による絶縁基板の形状例をそ
れぞれ示す断面図である。 図中、１は絶縁体、２ｍ、２ｂはメタライズパターン、
３は凸部である。 なお、図中の同一符号は同一または相当部分ｌ示す。 代理人　大巻　増雄　（外２名） 第１図FIGS. 1(a) and (b) are a plan view and a sectional view taken along line 171 of a conventional insulating substrate, and FIGS. 2(a) and (b) are a plan view and a sectional view of an insulating substrate showing an embodiment of the present invention. Jiang-■
A cross-sectional view of the line, FIG. 3, shows how this understanding is used. A cross-sectional view of the insulating substrate being brazed to the radiation fin, and FIG. 4 <&) to <c> show examples of the shape of the insulating substrate according to the invention FIG. In the figure, 1 is an insulator, 2m, 2b is a metallized pattern,
3 is a convex portion. Note that the same reference numerals in the figures indicate the same or corresponding parts. Agent Masuo Ohmaki (2 others) Figure 1

Claims (1)

【特許請求の範囲】[Claims] 　絶縁体の両面に半導体素子および放熱フィン等がろう
付けされるメタライズパターンが施された絶縁基板を有
する半導体装置において、前記絶縁体の少なくとも一方
の面の周縁部に前記絶縁体の両面のメタライズパターン
間の沿面距離を長くするための凸部を設けたことを特徴
とする半導体装置。In a semiconductor device having an insulating substrate having a metallized pattern on both sides of an insulator to which a semiconductor element, a heat dissipation fin, etc. are brazed, the metallized pattern on both sides of the insulator is provided on a peripheral edge of at least one side of the insulator. A semiconductor device characterized in that a convex portion is provided for increasing the creepage distance between the two.