JPS6140772Y2 - - Google Patents
Info
- Publication number
- JPS6140772Y2 JPS6140772Y2 JP11682682U JP11682682U JPS6140772Y2 JP S6140772 Y2 JPS6140772 Y2 JP S6140772Y2 JP 11682682 U JP11682682 U JP 11682682U JP 11682682 U JP11682682 U JP 11682682U JP S6140772 Y2 JPS6140772 Y2 JP S6140772Y2
- Authority
- JP
- Japan
- Prior art keywords
- base material
- reduced pressure
- winding mechanism
- plasma
- exhaust gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000463 material Substances 0.000 claims description 32
- 238000004804 winding Methods 0.000 claims description 20
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 3
- 238000007599 discharging Methods 0.000 claims description 2
- 239000002994 raw material Substances 0.000 description 11
- 238000004140 cleaning Methods 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000006837 decompression Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Landscapes
- Chemical Vapour Deposition (AREA)
Description
【考案の詳細な説明】
本考案は、原料ガスを減圧容器内のプラズマ放
電場においてプラズマ分解させて基材の表面に導
きこの基材の表面に非晶質薄膜を生成するように
したプラズマCVD装置に関するものである。[Detailed description of the invention] The present invention is a plasma CVD method in which a raw material gas is plasma decomposed in a plasma discharge field in a reduced pressure container and guided to the surface of a base material to generate an amorphous thin film on the surface of the base material. It is related to the device.
従来、この種のプラズマCVD装置は、例えば
第１図に示すように、内部にプラズマ放電場ａを
形成してなる減圧容器ｂの一端側に基材送り出し
機構ｃと基材巻取り機構ｄとを配設し、前記基材
送り出し機構ｃから送り出される長尺な基材ｅを
前記減圧容器ｂの他端側に設けたガイドローラｆ
に案内させて前記プラズマ放電場ａを往復するよ
うに設定し、前記プラズマ放電場ａに原料ガスを
供給する原料ガス供給路ｇを設け、そして前記基
材取出機構ｄ近傍部に不要ガスを外部に排出する
排気ガス導出口ｈを設けてなるものが一般的であ
る。ｐは、この排出用ポンプであり、ｒはプラズ
マ放電用電極である。 Conventionally, this type of plasma CVD apparatus, as shown in FIG. 1, has a base material delivery mechanism c and a base material winding mechanism d at one end side of a reduced pressure vessel b which has a plasma discharge field a formed therein. and a guide roller f provided on the other end side of the reduced pressure container b to carry the long base material e fed out from the base material feeding mechanism c.
A raw material gas supply path g for supplying raw material gas to the plasma discharge field a is provided, and unnecessary gas is removed from the outside near the base material extraction mechanism d. Generally, the exhaust gas is provided with an exhaust gas outlet h for discharging the exhaust gas. p is the evacuation pump, and r is the plasma discharge electrode.
ところが、このようなものでは、排気ガスが巻
取機構ｄを通過するため、該巻取機構ｄに原料成
分が付着して、該巻取機構ｄが汚染され、その清
掃に手間がかかるという不都合がある。 However, in such a device, since the exhaust gas passes through the winding mechanism d, raw material components adhere to the winding mechanism d, contaminating the winding mechanism d, which is inconvenient in that it takes time and effort to clean it. There is.
本考案は、このような事情に着目してなされた
もので、排気ガス導出口を減圧容器の他端側に設
けることによつて前述した不都合を解消すること
ができるプラズマCVD装置を提供するものであ
る。 The present invention was developed in view of these circumstances, and provides a plasma CVD apparatus that can eliminate the above-mentioned disadvantages by providing an exhaust gas outlet at the other end of the vacuum chamber. It is.
以下、本考案の一実施例を第２図に従つて説明
する。 An embodiment of the present invention will be described below with reference to FIG.
減圧容器１の外方所定位置に、図示しない高周
波電源装置に接続された対をなす高周波電極２，
３を減圧容器１を介して対向配置し、これら両電
極２，３間に存する減圧容器１の内部空間にプラ
ズマ放電場４を形成している。また、この減圧容
器１の一端側には長尺なシート状の基材５を送り
出す基材送り出し機構６と該基材５を巻取る基材
巻取機構７とが配置され、他端側には基材送り出
し機構６から送り出される基材５を一且プラズマ
放電場４を通過させたのち再びプラズマ放電場４
を通過させて一端側に戻し基材巻取機構７に巻取
らせるガイドローラ８が配置されている。なお、
前記基材送り出し機構６、前記基材巻取機構７お
よび前記ガイドローラ８は、第３図に示すような
共通の基枠９に支持されており、この基枠９は前
記減圧容器１内に挿脱可能に収容されている。ま
た、前記減圧容器１内には先端部所要個所にノズ
ル１１ａ…を有しプラズマ放電場４内に原料ガス
を噴射させる原料ガス導入路１１が挿入してあ
る。そして、この減圧容器１の他端側に排気ガス
導出口１２を開口させ、この排気ガス導出口１２
に真空ポンプ（図示せず）を含む真空排気系１３
が接続してある。 A pair of high-frequency electrodes 2 connected to a high-frequency power supply (not shown) is provided at a predetermined position outside the decompression vessel 1.
3 are placed facing each other with the reduced pressure vessel 1 interposed therebetween, and a plasma discharge field 4 is formed in the internal space of the reduced pressure vessel 1 existing between these two electrodes 2 and 3. Further, a base material feeding mechanism 6 for feeding out a long sheet-like base material 5 and a base material winding mechanism 7 for winding up the base material 5 are disposed on one end side of the vacuum container 1, and a base material winding mechanism 7 for winding up the base material 5 is disposed on the other end side. The base material 5 sent out from the base material delivery mechanism 6 is passed through the plasma discharge field 4 and then passed through the plasma discharge field 4 again.
A guide roller 8 is disposed to allow the substrate to pass through, return to one end side, and be wound up by the substrate winding mechanism 7. In addition,
The base material feeding mechanism 6, the base material winding mechanism 7, and the guide roller 8 are supported by a common base frame 9 as shown in FIG. It is housed in a removable manner. In addition, a raw material gas introduction path 11 is inserted into the reduced pressure vessel 1 and has nozzles 11a at required positions at the tip thereof and injects raw material gas into the plasma discharge field 4. Then, an exhaust gas outlet 12 is opened on the other end side of this reduced pressure container 1, and this exhaust gas outlet 12
A vacuum evacuation system 13 including a vacuum pump (not shown)
is connected.
次に、この装置の作用を説明する。 Next, the operation of this device will be explained.
原料ガスが原料ガス導入路１１より連続的に導
入され、ノズル１１ａ…から噴射されると、この
原料ガスは、両電極２，３間を流れる高周波電流
によつてプラズマ分解され、基材５のうちプラズ
マ放電場４内にある部分に案内され、その表面に
堆積する。送り出し機構６および巻取機構７によ
つて順次基材５を移動させれば、該基材５の表面
全体に順次堆積（コーテイング）が行なわれてい
く。 When the raw material gas is continuously introduced from the raw material gas introduction path 11 and injected from the nozzles 11a..., this raw material gas is plasma decomposed by the high frequency current flowing between the electrodes 2 and 3, and the base material 5 is It is guided to a portion of the plasma discharge field 4 and deposited on its surface. When the base material 5 is sequentially moved by the feeding mechanism 6 and the winding mechanism 7, the entire surface of the base material 5 is sequentially deposited (coated).
一方、プラズマ分解されず、あるいは堆積され
なかつたガスは減圧容器１の他端側に設けた排気
ガス導出口１２に導かれここから外部へ排出され
る。 On the other hand, gas that has not been plasma decomposed or deposited is guided to the exhaust gas outlet 12 provided at the other end of the reduced pressure vessel 1 and is discharged to the outside from there.
このように本実施例によれば、排気ガスが従来
のように基材巻取り機構７を通過することがなく
なるので、原料成分の付着による該巻取機構７の
汚染を防止することができ、したがつて巻取機構
７を清掃する手間が省けるという効果がある。 As described above, according to this embodiment, since the exhaust gas does not pass through the base material winding mechanism 7 as in the conventional case, it is possible to prevent contamination of the winding mechanism 7 due to adhesion of raw material components. Therefore, there is an effect that the effort of cleaning the winding mechanism 7 can be saved.
なお、本考案は前記実施例に限られないのは勿
論であり、送り出し機構、巻取機構およびガイド
ローラは基枠に一体に支持されたものでなくても
よいが前記実施例のようなものであれば基材の取
付けや取替えを容易に行なえる。また、基材はシ
ート状のものに限られず、原料ガスの導入路も前
記実施例のそれに限られるものではない。さら
に、両電極は真空容器外に設けたものに限られず
真空容器内に設けたものでもよい。 It should be noted that the present invention is of course not limited to the embodiments described above, and the feeding mechanism, winding mechanism, and guide roller do not have to be integrally supported by the base frame, but may be similar to those in the embodiments described above. If so, the base material can be easily attached or replaced. Further, the base material is not limited to a sheet-like material, and the introduction path for the raw material gas is not limited to that of the above embodiment. Furthermore, both electrodes are not limited to those provided outside the vacuum container, but may be provided inside the vacuum container.
以上、説明したように、本考案は、排気ガス導
出口を、減圧容器の送り出し機構および巻取機構
の設けてある側と反対側の端部に設けることによ
つて、巻取機構の汚染を防止し清掃に要した手間
を省くことができるという効果を奏するプラズマ
CVD装置を提供できるものである。 As explained above, the present invention prevents contamination of the winding mechanism by providing the exhaust gas outlet at the end of the vacuum container opposite to the side where the sending mechanism and winding mechanism are provided. Plasma has the effect of preventing and reducing the effort required for cleaning.
It can provide CVD equipment.
第１図は、従来例を示す概略説明図、第２図は
本考案の一実施例を示す概略説明図、第３図は同
実施例における減圧容器内部を示す斜視図であ
る。
１……減圧容器、４……プラズマ放電場、５…
…基材、６……基材送り出し機構、７……基材巻
取機構、９……基枠、１２……排気ガス導出口。
FIG. 1 is a schematic explanatory diagram showing a conventional example, FIG. 2 is a schematic explanatory diagram showing an embodiment of the present invention, and FIG. 3 is a perspective view showing the inside of a vacuum container in the same embodiment. 1...Reduced pressure vessel, 4...Plasma discharge field, 5...
...Base material, 6...Base material delivery mechanism, 7...Base material winding mechanism, 9...Base frame, 12...Exhaust gas outlet.
Claims (1)
一端側に基材送り出し機構と基材巻取り機構とを
配設し、前記基材送り出し機構から送り出される
長尺な基材を前記プラズマ放電場を通して一且前
記減圧容器の他端側へ導いた後再び前記減圧容器
の一端側へ帰還させて前記基材巻取機構により巻
取り得るように構成したプラズマCVD装置にお
いて、前記減圧容器の他端部に該容器内の不要ガ
スを外部へ排出するための排気ガス導出口を設け
たことを特徴とするプラズマCVD装置。 A base material delivery mechanism and a base material winding mechanism are disposed on one end side of a reduced pressure container having a plasma discharge field therein, and a long base material sent out from the base material delivery mechanism is transported to the plasma discharge field. In the plasma CVD apparatus, the plasma CVD apparatus is configured such that the substrate is guided through one end to the other end of the reduced pressure container and then returned to the one end of the reduced pressure container to be wound up by the base material winding mechanism. 1. A plasma CVD apparatus characterized in that an exhaust gas outlet for discharging unnecessary gas in the container to the outside is provided in the chamber.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11682682U JPS5921660U (en) | 1982-07-31 | 1982-07-31 | Plasma CVD equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11682682U JPS5921660U (en) | 1982-07-31 | 1982-07-31 | Plasma CVD equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5921660U JPS5921660U (en) | 1984-02-09 |
| JPS6140772Y2 true JPS6140772Y2 (en) | 1986-11-20 |
Family
ID=30269160
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11682682U Granted JPS5921660U (en) | 1982-07-31 | 1982-07-31 | Plasma CVD equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5921660U (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2520589B2 (en) * | 1985-06-17 | 1996-07-31 | キヤノン株式会社 | Method for forming deposited film by CVD method |
-
1982
- 1982-07-31 JP JP11682682U patent/JPS5921660U/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5921660U (en) | 1984-02-09 |
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