JPS635526A - Dry etching device - Google Patents
Dry etching deviceInfo
- Publication number
- JPS635526A JPS635526A JP14871786A JP14871786A JPS635526A JP S635526 A JPS635526 A JP S635526A JP 14871786 A JP14871786 A JP 14871786A JP 14871786 A JP14871786 A JP 14871786A JP S635526 A JPS635526 A JP S635526A
- Authority
- JP
- Japan
- Prior art keywords
- vacuum vessel
- vacuum container
- heating
- dry etching
- adhesion preventive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000001312 dry etching Methods 0.000 title claims abstract description 15
- 238000010438 heat treatment Methods 0.000 claims abstract description 18
- 230000002265 prevention Effects 0.000 claims description 7
- 238000005530 etching Methods 0.000 abstract description 10
- 238000000034 method Methods 0.000 abstract description 2
- 230000003449 preventive effect Effects 0.000 abstract 5
- 239000007795 chemical reaction product Substances 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 6
- 239000000758 substrate Substances 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
Landscapes
- Drying Of Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、半導体基板などの試料をドライエツチングす
る装置に関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to an apparatus for dry etching a sample such as a semiconductor substrate.
従来の技術
近年、ドライエツチング装置は、微細パターンをよシ高
精度に加工できる技術として、半導体等の製造技術の中
核となるものである。BACKGROUND OF THE INVENTION In recent years, dry etching equipment has become the core of semiconductor manufacturing technology as a technology that can process fine patterns with high precision.
以下図面を参照しながら上述した従来のプラズマエツチ
ング装置の一例について説明する。An example of the above-mentioned conventional plasma etching apparatus will be described below with reference to the drawings.
第２図は、従来のドライエツチング装置の構成を示すも
のである。第２図において、１ａは真空容器、２ａは上
部電極、３ａは下部電極で７ａの試料を置くところであ
る。６ａはガス導入口、６ａは高周波電源、８ａは真空
容器１ａを加熱するだめの加熱機構、９ａは排気口であ
る。FIG. 2 shows the configuration of a conventional dry etching apparatus. In FIG. 2, 1a is a vacuum vessel, 2a is an upper electrode, and 3a is a lower electrode, where a sample 7a is placed. 6a is a gas inlet, 6a is a high frequency power source, 8a is a heating mechanism for heating the vacuum container 1a, and 9a is an exhaust port.
以上のように構成されたドライエツチング装置について
、以下にその動作について説明する。The operation of the dry etching apparatus constructed as described above will be explained below.
従来のドライエツチング装置１例えば平行平板電極型の
ドライエツチング装置は、真空容器１ａ内に上部電極２
ａと、これに対向して試料台となる下部電極３ａを配置
させ、この下部電極３ａに被エツチング試料７ａとして
の半導体基板を載置させた状態で、真空容器１ａ内にガ
ス導入口６ａからエツチング用ガスを導入すると同時に
、排気口９ａよ、り適当に排気しつつガス圧を一定に保
持し、かつ、下部電極３ａに例えば１３．５ ｅ ＭＨ
ｚの高周波電圧を、高周波電源６ａから印加して。A conventional dry etching apparatus 1, for example, a parallel plate electrode type dry etching apparatus, has an upper electrode 2 in a vacuum chamber 1a.
A and a lower electrode 3a serving as a sample stage are arranged opposite to this, and with a semiconductor substrate as a sample to be etched 7a placed on the lower electrode 3a, a gas inlet 6a is inserted into the vacuum chamber 1a. At the same time as the etching gas is introduced, the gas pressure is kept constant while being appropriately exhausted through the exhaust port 9a, and the etching gas is supplied to the lower electrode 3a with, for example, 13.5 e MH.
A high frequency voltage of z is applied from the high frequency power supply 6a.
ガスプラズマを発生させ、このプラズマの化学作用およ
びスパッタ作用により、半導体基板表面の多結晶シリコ
ン膜、窒化珪素膜などをエツチング除去するようにし、
また、真空容器１ａに加熱機構８ａを配して加熱し、真
空容器１ａ内を常に所定条件下に保持するようにしてい
る。Gas plasma is generated, and polycrystalline silicon films, silicon nitride films, etc. on the surface of the semiconductor substrate are etched away by the chemical action and sputtering action of this plasma.
Further, a heating mechanism 8a is disposed in the vacuum container 1a to heat the vacuum container 1a so that the inside of the vacuum container 1a is always maintained under a predetermined condition.
発明が解決しようとする問題点
しかしながら、上記の構成では、エツチング用ガスと試
料７ａとの反応によって生成された反応生成物が真空容
器１ａの内壁面に付着し、これが加工すべき試料７ａ面
の汚染原因となるという問題点を有していた。Problems to be Solved by the Invention However, in the above configuration, reaction products generated by the reaction between the etching gas and the sample 7a adhere to the inner wall surface of the vacuum container 1a, and this causes the surface of the sample 7a to be processed to be damaged. This had the problem of causing pollution.
問題点を解決するための手段
本発明は、上記問題点に鑑み、真空容器に内接し、加熱
機構を有した着脱可能な防着板を備えたものである。Means for Solving the Problems In view of the above-mentioned problems, the present invention includes a removable adhesion prevention plate inscribed in a vacuum container and having a heating mechanism.
作 用
本発明は、上記した構成によって、真空容器に内接した
加熱機構を有する着脱可能な防着板に付着するエツチン
グ用ガスと試料との反応によって生成された反応生成物
を、加熱遊離除去させることによシ、真空容器内を常に
所定の条件に保持させることとなる。Effect: With the above-described configuration, the present invention removes reaction products generated by the reaction between the etching gas and the sample adhering to the removable adhesion prevention plate having a heating mechanism inscribed in the vacuum container. By doing so, the inside of the vacuum container is always maintained at a predetermined condition.
実施例
以下本発明の実施例のドライエツチング装置について１
図面を参照しながら説明する。Examples 1 About the dry etching apparatus of the embodiments of the present invention
This will be explained with reference to the drawings.
第１図は本発明の実施例におけるドライエツチング装置
の構成を示すものである。FIG. 1 shows the structure of a dry etching apparatus according to an embodiment of the present invention.
第１図において、１は真空容器、２は上部の平板電極、
３は下部の平板電極で試料７を置くところである。４は
加熱機構８を有した着脱可能な防着板で真空容器１に内
接している。６はガス導入口、６は高周波電源、８は上
部の平板電極２．下部の平板電極３．防着板４を加熱す
るだめの例えば、電気ヒータを内蔵した加熱機構、９は
排気口である。In Fig. 1, 1 is a vacuum container, 2 is an upper flat plate electrode,
3 is the lower flat plate electrode where the sample 7 is placed. Reference numeral 4 denotes a detachable adhesion prevention plate having a heating mechanism 8 and is inscribed in the vacuum container 1 . 6 is a gas inlet, 6 is a high frequency power source, 8 is an upper flat plate electrode 2. Lower flat plate electrode 3. For example, a heating mechanism with a built-in electric heater is used to heat the adhesion prevention plate 4, and 9 is an exhaust port.
以上のように構成されたドライエツチング装置について
、以下第１図を用いてその動作を説明する。The operation of the dry etching apparatus constructed as described above will be explained below with reference to FIG.
第１図は本実施例のドライエツチング装置を示すもので
あって、真空容器１内に上部の平板電極２と、これに対
向して試料台となる下部の平板電極３を配置させ、この
下部の平板電極３に被エツチング試料７としての半導体
基板を載置させた状態で、真空容器１内にガス導入口６
からエツチング用ガスを導入すると同時に、排気口９よ
り適当に排気しつつガス圧を一定に保持し、かつ、下部
の平板電極３に例えば１３．５６ＭＨｚ の高周波電圧
を、高周波電源６から印加して、ガスプラズマを発生さ
せ、このプラズマの化学作用およびスパッタ作用により
、半導体基板表面の多結晶シリコン膜、窒化珪素膜など
をエツチング除去するようにし、真空容器１に内接した
加熱機構８を有する着脱可能な防着板４に付着するエツ
チング用ガスと試料７との反応によって生成された反応
生成物を加熱遊離除去させることにより、真空容器１内
は常に清浄に保持されることになり、結果的に試料７へ
の汚染を防止できる。FIG. 1 shows the dry etching apparatus of this embodiment, in which an upper flat plate electrode 2 and a lower flat plate electrode 3, which serves as a sample stage, are arranged in a vacuum vessel 1, and With the semiconductor substrate as the sample to be etched 7 placed on the flat plate electrode 3, a gas inlet 6 is opened in the vacuum container 1.
At the same time, the etching gas is introduced from the exhaust port 9 while the gas pressure is kept constant while being appropriately exhausted from the exhaust port 9, and a high frequency voltage of, for example, 13.56 MHz is applied to the lower flat plate electrode 3 from the high frequency power source 6. , gas plasma is generated, and the polycrystalline silicon film, silicon nitride film, etc. on the surface of the semiconductor substrate are etched and removed by the chemical action and sputtering action of this plasma. By heating and liberating the reaction products generated by the reaction between the etching gas and the sample 7 adhering to the anti-adhesion plate 4, the inside of the vacuum container 1 is always kept clean. Therefore, contamination of sample 7 can be prevented.
発明の効果
以上のように本発明は、真空容器に内接した加熱機構を
有する防着板に付着するエツチング用ガスと試料との反
応によって生成された反応生成物を、加熱遊離除去させ
ることにより真空容器内を常に清浄に保持することがで
きる。また、防着板に反応生成物が付着し、加熱によっ
て遊離除去できない場合にも、防着板は着脱可能である
ため。Effects of the Invention As described above, the present invention is capable of removing reaction products generated by the reaction between the etching gas and the sample adhering to the adhesion-prevention plate having a heating mechanism inscribed in the vacuum container, by heating and liberating the reaction product. The inside of the vacuum container can always be kept clean. Furthermore, even if a reaction product adheres to the adhesion prevention plate and cannot be removed by heating, the adhesion prevention plate is removable.
交換することができるので、この反応生成物によってエ
ツチング中の試料の汚染を効果的に阻止でき、常に良好
、適切なエツチングが行なえるなどの特長を有するもの
である。Since it can be replaced, this reaction product can effectively prevent contamination of the sample during etching, and has the advantage that good and appropriate etching can always be performed.
第１図は本発明の一実施例によるドライエツチング装置
を示す断面図、第２図は従来例によるドライエツチング
装置を示す断面図である。
１・・・・・・真空容器、２・・・・・・平板電極、３
・・・・・・平板電極、４・・・・・・防着板、６・・
・・・・ガス導入口、６・山・・高周波電源、了・・・
・・・試料、８・・・・・・加熱機構、９・・・・・・
排気口。FIG. 1 is a sectional view showing a dry etching apparatus according to an embodiment of the present invention, and FIG. 2 is a sectional view showing a conventional dry etching apparatus. 1... Vacuum container, 2... Flat plate electrode, 3
...Flat electrode, 4... Anti-adhesion plate, 6...
...Gas inlet, 6.High frequency power supply, completed...
...Sample, 8...Heating mechanism, 9...
exhaust port.
Claims (1)
、この真空容器内に設けられ対向する一対の平板電極と
、前記平板電極のいずれか一方に電気的に接続された高
周波電源と、前記真空容器に内接し、加熱機構を有した
着脱可能な防着板を備えたことを特徴とするドライエッ
チング装置。a vacuum container, a vacuum evacuation means connected to the vacuum container, a pair of opposing flat plate electrodes provided within the vacuum container, a high frequency power source electrically connected to either one of the flat electrodes; A dry etching apparatus characterized by comprising a removable adhesion prevention plate inscribed in a vacuum container and having a heating mechanism.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14871786A JPS635526A (en) | 1986-06-25 | 1986-06-25 | Dry etching device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14871786A JPS635526A (en) | 1986-06-25 | 1986-06-25 | Dry etching device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS635526A true JPS635526A (en) | 1988-01-11 |
Family
ID=15459020
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14871786A Pending JPS635526A (en) | 1986-06-25 | 1986-06-25 | Dry etching device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS635526A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63254731A (en) * | 1987-04-13 | 1988-10-21 | Hitachi Ltd | Plasma processor |
| US5637237A (en) * | 1994-03-08 | 1997-06-10 | International Business Machines Corporation | Method for hot wall reactive ion etching using a dielectric or metallic liner with temperature control to achieve process stability |
| US6815365B2 (en) | 1995-03-16 | 2004-11-09 | Hitachi, Ltd. | Plasma etching apparatus and plasma etching method |
| US8444926B2 (en) | 2007-01-30 | 2013-05-21 | Applied Materials, Inc. | Processing chamber with heated chamber liner |
-
1986
- 1986-06-25 JP JP14871786A patent/JPS635526A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63254731A (en) * | 1987-04-13 | 1988-10-21 | Hitachi Ltd | Plasma processor |
| US5637237A (en) * | 1994-03-08 | 1997-06-10 | International Business Machines Corporation | Method for hot wall reactive ion etching using a dielectric or metallic liner with temperature control to achieve process stability |
| US5798016A (en) * | 1994-03-08 | 1998-08-25 | International Business Machines Corporation | Apparatus for hot wall reactive ion etching using a dielectric or metallic liner with temperature control to achieve process stability |
| US6815365B2 (en) | 1995-03-16 | 2004-11-09 | Hitachi, Ltd. | Plasma etching apparatus and plasma etching method |
| US7208422B2 (en) | 1995-03-16 | 2007-04-24 | Hitachi, Ltd. | Plasma processing method |
| US7565879B2 (en) | 1995-03-16 | 2009-07-28 | Hitachi, Ltd | Plasma processing apparatus |
| US8444926B2 (en) | 2007-01-30 | 2013-05-21 | Applied Materials, Inc. | Processing chamber with heated chamber liner |
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