JPS58118111A - Plasma cvd apparatus - Google Patents
Plasma cvd apparatusInfo
- Publication number
- JPS58118111A JPS58118111A JP61582A JP61582A JPS58118111A JP S58118111 A JPS58118111 A JP S58118111A JP 61582 A JP61582 A JP 61582A JP 61582 A JP61582 A JP 61582A JP S58118111 A JPS58118111 A JP S58118111A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- gas
- plasma
- thin film
- processing chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
Abstract
Description
【発明の詳細な説明】 本発明はプラズマＯＶＤ装置に関する。[Detailed description of the invention] The present invention relates to a plasma OVD apparatus.
従来電子写真用ドラムとして使用されるＵドラム等の円
筒状金属サブストレートの表面に例えばアモルファスシ
リコンの薄膜を形成する手段として第１図示のようなプ
ラズマＯＶＤ（Ｃｈ＠ｍ１ｃａｌ Ｖａｐｏｒ Ｄｏｐ
ｏｓｌｔｉｏｎ ）装置が知られている。As a means of forming a thin film of amorphous silicon, for example, on the surface of a cylindrical metal substrate such as a U-drum conventionally used as an electrophotographic drum, plasma OVD (Ch@m1cal Vapor Dop) as shown in the first figure is used.
osltion) devices are known.
この装置はＵドラムその他の円筒状金属サブストレー）
ａを回転自在に収容した石英から成る真空処理室す内に
ＳｉＨ４等のガスを導入し、該ガスを該処理室すの外周
に設けたコイルからなるプラズマ発生装置Ｃにより励起
および電離して反応を起さしめ、その生成物を該サブス
トレートａの周面に耐着させて薄膜を形成するが、該サ
ブストレー）ａが長いとその局面に均一な厚さの薄膜が
得られず、また該コイルの巻数を増大させ或はコイルの
長さを増大させると該処理室す内のプラズマ密度が低下
して良好な薄膜が得られない等の不都合があった。This device is used for U-drums and other cylindrical metal substrays)
A gas such as SiH4 is introduced into a vacuum processing chamber made of quartz that rotatably accommodates a, and the gas is excited and ionized by a plasma generator C consisting of a coil installed around the outer circumference of the processing chamber to react. The product is caused to adhere to the circumferential surface of the substrate a to form a thin film, but if the substrate a is long, a thin film with a uniform thickness cannot be obtained on that surface, and If the number of turns of the coil is increased or the length of the coil is increased, the plasma density within the processing chamber decreases, resulting in inconveniences such as an inability to obtain a good thin film.
本発明はこうした不都合のない装置を提供することをそ
の目的としたもので、その特定発明は訂ドラムその他の
円筒状金属サブストレートを回転自在に収容した真空処
理室内にＳｉＨ４ガスその他のガスを導入し、該ガスを
プラズマ発生装置により励起および電離して反応を起さ
しめ、その生成物を該サブストレートの局面に耐着させ
て薄膜を形成する式のものに於て、該プラズマ発生装置
を前記サブストレートを囲繞する筒状の電極で構成して
成り、その第２発明は該プラズマ発生装置を前記サブス
トレートを囲繞する筒状の電極で構成すると共に該電極
内に前記ガスが導入される筒状のガス室を設け、該ガス
室の内側面に複数個のガス噴出口を設けて成り、その第
５発明は該プラズマ発生装置をサブストレートを囲繞す
る筒状の電極で構成し、該サブストレートに両端の着脱
自在の延長部を備えて全長に亘り該電極に対向させて成
る。The purpose of the present invention is to provide an apparatus free from such inconveniences, and its specific invention is to introduce SiH4 gas or other gas into a vacuum processing chamber which rotatably accommodates a printing drum or other cylindrical metal substrate. The gas is excited and ionized by a plasma generator to cause a reaction, and the resulting product adheres to the surface of the substrate to form a thin film. The plasma generating device is composed of a cylindrical electrode surrounding the substrate, and the plasma generating device is composed of a cylindrical electrode surrounding the substrate, and the gas is introduced into the electrode. A cylindrical gas chamber is provided, and a plurality of gas ejection ports are provided on the inner surface of the gas chamber, and the fifth invention comprises the plasma generator with a cylindrical electrode surrounding a substrate, The substrate is provided with removable extensions at both ends, facing the electrode over the entire length.
本発明装置の実施例を図面につき説明するに、その第２
ｖ！Ｊに於て（１）は真空処理室、（２）は中空筒状の
ムｌシリンダからなるサブストレー） 、（３１は該処
理室（１）の下方に設けたサブストレート（２）の回転
装置で、サブストレート（２）はその中心軸を該回転装
置（３）の回転軸に合致されて取付けされ該処理室（１
１内で回転する。（４）は該処理室（１）の側方に設け
た例えば５ｉＥ４ガスを導入するガス導入孔、（５）は
真空排気孔である。該処理室（１１内に導入されたＳＳ
Ｈ，等のガスは該処理室（１）内のプラズマ発生装置ｔ
（６１により励起および電離され反応を起してその生成
物がアース電位のサブストレー）＋２１の周面に耐着し
、アモルファスシリコン等の薄膜を形成する。該プラズ
マ発生装置（６）は該サブストレート（２）を囲繞する
これよりも長手の例えばＳＵＢ製の内外２重の筒体（１
４） （１６）からなる電極（７）にて構成されるもの
で、これにＲＦ電源が接続されると該サブストレート（
２）との間隔（８）内に比較的密度の高い安定したプラ
ズマが発生し、該サブストレート（２）の局面から電極
（７）までの距離をほぼ均一となし得るので該サブスト
レート（２）に焉−な薄膜を形成し得る。（９）はサブ
ストレート（２）の内側からこれを加熱するヒータであ
る。The second embodiment of the device of the present invention will be explained with reference to the drawings.
v! In J, (1) is a vacuum processing chamber, (2) is a substraight consisting of a hollow cylindrical cylinder), and (31 is a rotation device for the substrate (2) provided below the processing chamber (1). The substrate (2) is mounted with its center axis aligned with the rotation axis of the rotation device (3), and the substrate (2) is installed in the processing chamber (1).
Rotates within 1. (4) is a gas introduction hole provided on the side of the processing chamber (1) for introducing, for example, 5iE4 gas, and (5) is a vacuum exhaust hole. SS introduced into the processing chamber (11)
Gases such as H, etc. are supplied to the plasma generator t in the processing chamber (1).
(It is excited and ionized by 61 to cause a reaction, and its product adheres to the circumferential surface of +21 (substray at ground potential), forming a thin film of amorphous silicon or the like. The plasma generator (6) has a double inner and outer cylinder (1) made of SUB, for example, which is longer than the substrate (2) and surrounds the substrate (2).
4) It is composed of an electrode (7) consisting of (16), and when an RF power source is connected to this, the substrate (
A relatively dense and stable plasma is generated within the distance (8) between the substrate (2) and the electrode (7), and the distance from the surface of the substrate (2) to the electrode (7) can be made almost uniform. ) can form a thin film. (9) is a heater that heats the substrate (2) from inside.
該真空処理室（１１内に導入されるＳｉＨ，等のガスは
その一部がサブストレート（２）の薄膜形成に消費され
、残部は真空排気孔（５）から排出されるが、該ガスを
ｉｉＩ記電極電極）の筒体（１４１（１６１間に形成さ
れる中空筒状のガス室０υ内にガス導入孔（４）を介し
て導入し、該ガス室００内に於て一且静圧にされたガス
をサブストレート（２）と対向する内側の筒体α→から
なる内側面の複数個のガス噴出口ａカから該サブストレ
ート（２）との間隔（８）内にほぼ均一な速度で噴出さ
せ、かくて該ガスは該排気孔（５）に吸込まれるまでの
間に比較的長い暁闇プラズマ雰囲気にある間隔（８）内
に滞在して該ガスの生成物がサブストレート（２）の周
面に効率良く耐着し反応効率が向上されるようにした。A part of the gas such as SiH introduced into the vacuum processing chamber (11) is consumed for forming a thin film on the substrate (2), and the rest is exhausted from the vacuum exhaust hole (5). The cylindrical body (141 (161) of the electrode) is introduced through the gas introduction hole (4) into the hollow cylindrical gas chamber 0υ formed between the gas chambers 00 and 1 and static pressure. The gas is ejected from the plurality of gas ejection ports a on the inner surface of the inner cylinder α→ facing the substrate (2) to the substrate (2) in a substantially uniform space (8). The gas is ejected at such a velocity that the gas remains in the interval (8) in the dawn plasma atmosphere for a relatively long time before being sucked into the exhaust hole (5) and the products of the gas are transferred to the substrate ( 2) It was made to efficiently adhere to the surrounding surface and improve the reaction efficiency.
尚該電＊ｍとその外周のシールドａηとの間隙ａ■をパ
ッシェンの法則に従う微小なものに形成してそこ番こプ
ラズマ放電が発生しないようにした。また該ガス噴出口
（１３を例えば第４図に見られるようにガス導入孔（４
）側の筒体（１６０に設けられる穴数とその他側の筒体
（１６ｂ）とに設けられる穴数を変えることによってサ
ブストレート（２）の＃Ｍｌｌｆｌに均一にガスが噴出
され、その分布状態が向上し、また各ガス噴出口０ｚの
口径を変えることによってガスの種類、圧力等が変わっ
ても比較的簡単に均一のガス分布が得られるように調節
することが出来る。さらに該電極（７）の外側の筒体（
１４）はその外周のアースシールドＣ１７）に絶縁碍子
ａＪを介して取付けされるようにし、内側の筒体Ｑ６）
を両端のリングＱ５ｉ Ｄｉを介して外側の筒体α◆に
着脱自在に取付け、ｗｉ賃ジブストレート２）の寸法が
変わった場合、該リングｕｓ Ｑ５１及び内側の筒体Ｑ
６）を外側の筒体０荀から取外して任意に間隔（８）ｔ
−調節出来ると共に簡単に該筒体（ｌｌ１９の清掃を行
なえるようにした。The gap a2 between the electric current *m and the shield aη on its outer periphery was formed to be minute in accordance with Paschen's law to prevent plasma discharge from occurring there. In addition, the gas injection port (13) is replaced with the gas introduction hole (4) as shown in FIG. 4, for example.
By changing the number of holes provided in the cylindrical body (160) on the side of Furthermore, by changing the diameter of each gas ejection port 0z, even if the type of gas, pressure, etc. change, it can be adjusted relatively easily to obtain a uniform gas distribution. ) outer cylinder (
14) is attached to the earth shield C17) on its outer periphery via an insulator aJ, and the inner cylindrical body Q6)
is removably attached to the outer cylinder α
6) from the outer cylindrical body 0 and set the interval (8) t arbitrarily.
- The cylinder body (119) can be adjusted and easily cleaned.
該筒状の電極（７）をサブストレート（２）よりも多少
長手に構成しても該電極（７）の上下端部に於けるプラ
ズマ放電の不均一により該電極（７）の端部に対向する
サブストレート（２）の局面には厚さの多少とも不均一
な薄膜が形成され昌いが、該ザブストレート（２）の上
下の各端部にカプラー←ＩＱＩを介してム１等からなる
延長部０１ｃｌＩを着脱自在に取付け、サブストレート
（２）の上下端部と電極（７）との間で放電不均一が生
ずるを防止するようにした。尚サブストレート（２）の
長さが短いものである場合、その複数個を該カプラーα
湯を介して接続し、各サブストレート（２）に同時に薄
膜を形成させることも可能である。Even if the cylindrical electrode (7) is configured to be somewhat longer than the substrate (2), the plasma discharge at the upper and lower ends of the electrode (7) may be uneven due to unevenness at the ends of the electrode (7). A thin film with a more or less non-uniform thickness is formed on the opposite surface of the substrate (2). Extension portions 01clI are detachably attached to prevent uneven discharge between the upper and lower ends of the substrate (2) and the electrode (7). In addition, if the length of the substrate (2) is short, a plurality of them are connected to the coupler α.
It is also possible to connect via hot water and form a thin film on each substrate (2) at the same time.
その作動を説明するに、紅シリンダ等のサブストレート
（２）の両端に延長部翰翰を設けてこれを筒状の電極（
７）内に収容し、真空処理室＜１１内を真空排気したの
ちヒータ（９）でのサブストレート（２）の外熱と回転
装置（３）によるサブストレート（２）の回転を行ない
、さらにガス室αυのガス噴出口ａカを介して８１Ｈ４
等の反応ガスを均一な間１１４ （８）内に均一に噴出
させつつ電極（７）に通電すると該間隔（８）内に比較
的密度の高いプラズマが発生し、酸ガスは排気孔（５）
から排出されるまでの時間のうち比較的長い時間数プラ
スマ内に存在してその多くが電離され、その成分が該サ
ブストレート（２）の周面に比較的効率良く均一な厚さ
で薄膜状に耐着する。To explain its operation, extenders are provided at both ends of the substrate (2) such as a red cylinder, and these are connected to the cylindrical electrodes (
7) After evacuating the inside of the vacuum processing chamber <11, the substrate (2) is externally heated by the heater (9) and rotated by the rotation device (3), and further 81H4 through the gas outlet a of the gas chamber αυ
When the electrode (7) is energized while ejecting a reaction gas uniformly into the space 114 (8), relatively dense plasma is generated within the space (8), and the acid gas is discharged through the exhaust hole (5). )
The plasma remains in the plasma for a relatively long time until it is discharged, and most of it is ionized, and its components form a thin film with a uniform thickness on the circumferential surface of the substrate (2) relatively efficiently. resistant to.
このように本発明の特定発明によるときは真空処理室内
に設けた筒状の電極でサブストレートを囲繞するように
したので該電極とサブストレートとの間隔を均一化出来
ると共にそこに比較的密度の高いプラズマを発生させ得
サブストレートの周面に比較的均一な薄膜を形成出来、
その第２発明よればさらに該筒状の電極の内部に中空の
ガス室を設け、その内側面の複数個のガス噴出口から８
１Ｈ４等の反応ガスを噴出するようにしたので前記間隔
内に均一にガスを分布させ得ると共にプラズマ内に比較
的長時間ガスを滞在させ得、ガス成分を効率良くサブス
トレートに耐着出来、その第３発明によれば筒状の電極
内で回動するサブストレートの上下に着脱自在の延長部
を設けたので、ガスの流れを一様にし、かつサブストレ
ートの端部と電極との間で異常放電による放電不均一が
生ずるを防止出来、サブストレートにより一層均−な薄
膜を形成させ得る等の効果がある。In this way, according to the specific invention of the present invention, the substrate is surrounded by the cylindrical electrode provided in the vacuum processing chamber, so that the distance between the electrode and the substrate can be made uniform, and a relatively high density can be formed there. It can generate high plasma and form a relatively uniform thin film on the peripheral surface of the substrate.
According to the second invention, a hollow gas chamber is further provided inside the cylindrical electrode, and a plurality of gas outlets on the inner surface of the cylindrical electrode are provided with a hollow gas chamber.
Since the reactive gas such as 1H4 is ejected, the gas can be uniformly distributed within the above-mentioned interval, and the gas can be allowed to stay in the plasma for a relatively long time, and the gas components can be efficiently adhered to the substrate. According to the third invention, removable extensions are provided above and below the substrate rotating within the cylindrical electrode, so that the gas flow is uniform and the gas flow is uniform between the end of the substrate and the electrode. It is possible to prevent non-uniform discharge due to abnormal discharge, and it is possible to form a more uniform thin film on the substrate.
第１図は従来例の線図、第２図は本発明装置の１例の裁
断側面図、第５図はその裁断平面図、第４図は電極の一
部を截除した斜視図である。
（１）・・・・・・真空処理室
（２）・・・・・・サブストレート
（４）・・・・・・ガス導入孔
（６）・・・・・・プラズマ発生装置
（７）・・・・・・電極
Ｑｌｌ・・・・・・ガ ス 室
０２）・・・・・・ガス噴出口
＜２＋１１（２０１・・・延 長 部特許出願人
日本真空技術株式会社
仝 上 スタンレー電気株式会社、、覧
代 理 人 北 村 欣 −凄）；°。
外２名Fig. 1 is a line diagram of a conventional example, Fig. 2 is a cut side view of an example of the device of the present invention, Fig. 5 is a cut plane view thereof, and Fig. 4 is a perspective view with a part of the electrode cut away. . (1)...Vacuum processing chamber (2)...Substrate (4)...Gas introduction hole (6)...Plasma generator (7) ...Electrode Qll...Gas chamber 02)...Gas outlet <2+11 (201...Extension Patent applicant
Japan Vacuum Technology Co., Ltd. Stanley Electric Co., Ltd., Managing Director Kin Kitamura - Awesome) ;°. 2 people outside
Claims (1)
転自在に収容した真空処理室内にＳｉＨ４ガスその他の
ガスを導入し、該ガスをプラズマ発生装置により励起お
よび電離して反応を起さしめ、その生成物を該サブスト
レートの局面に耐着させて薄膜を形成する式のものに於
て、該プラズマ発生装置を前記サブストレートを囲繞す
る鋤状の電極で構成して成るプラズマＯＶＤ装置。 ２、Ａｌドラムその他の円筒状金属サブストレートを回
転自在に収容した真空処理室内にＳｉＨ４ガスその他の
ガスを導入し、該ガスをプラズマ発生装置により励起お
よび電離して反応を起さしめ、その生成物を該サブスト
レートの局面に耐層させて薄膜を形成する式のものに於
て、該プラズマ発生装置を前記サブストレー）ｒｔ凹繞
する筒状の電極で構成すると共に該電極内にｉｉＪ＆：
ガスが導入される筒状のガス室を設け、該ガス室の内側
面に複数個のガス噴出口を設けて成るプラズマＯＶＤ装
置。 Ａ Ａｌドラムその他の円筒状金属サブストレートを
回転自在に収容した真空処理室内にＳｉＨ４ガスその他
のガスを導入し、該ガスをプラズマ発生装置により励起
および電離して反応を起さしめ、その生成物を該サブス
トレートのＦ＃面に耐着させて薄膜を形成する式のもの
に於て、該プラズマ発生装置を前記サブストレートを囲
繞する筒状の電極で構成し、該サブストレートに両端の
着脱自在の延長部を備えて全長に亘り該電極と対向させ
て成るプラズマＯＶＤ装置。[Claims] 1. SiH4 gas or other gas is introduced into a vacuum processing chamber that rotatably houses an A1 drum or other cylindrical metal substrate, and the gas is excited and ionized by a plasma generator to cause a reaction. The plasma generating device comprises a plow-shaped electrode surrounding the substrate, in which the plasma is generated and the product is adhered to the surface of the substrate to form a thin film. OVD device. 2. SiH4 gas or other gas is introduced into a vacuum processing chamber that rotatably accommodates an Al drum or other cylindrical metal substrate, and the gas is excited and ionized by a plasma generator to cause a reaction and its generation. In a type in which a thin film is formed by attaching an object to the surface of the substrate, the plasma generating device is constituted by a cylindrical electrode concave on the substrate, and iiJ&:
A plasma OVD apparatus comprising a cylindrical gas chamber into which gas is introduced, and a plurality of gas jet ports provided on the inner surface of the gas chamber. A SiH4 gas or other gas is introduced into a vacuum processing chamber that rotatably houses an Al drum or other cylindrical metal substrate, and the gas is excited and ionized by a plasma generator to cause a reaction, and the resulting product is generated. In the type in which a thin film is formed by adhering to the F# side of the substrate, the plasma generating device is composed of a cylindrical electrode surrounding the substrate, and the electrodes at both ends are attached to and detached from the substrate. A plasma OVD device comprising a freely extendable extension part facing the electrode over the entire length.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61582A JPS58118111A (en) | 1982-01-07 | 1982-01-07 | Plasma cvd apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61582A JPS58118111A (en) | 1982-01-07 | 1982-01-07 | Plasma cvd apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58118111A true JPS58118111A (en) | 1983-07-14 |
| JPH0472378B2 JPH0472378B2 (en) | 1992-11-18 |
Family
ID=11478632
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61582A Granted JPS58118111A (en) | 1982-01-07 | 1982-01-07 | Plasma cvd apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58118111A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58147026A (en) * | 1982-02-24 | 1983-09-01 | Toshiba Corp | Apparatus for film formation by glow discharge |
| JPS6086276A (en) * | 1983-10-17 | 1985-05-15 | Canon Inc | Formation of deposited film by discharge |
| CN102335580A (en) * | 2011-06-21 | 2012-02-01 | 浙江大学 | Apparatus and method for preparing group IV nanoparticles with capacitive coupling plasma |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5391664A (en) * | 1977-01-24 | 1978-08-11 | Hitachi Ltd | Plasma cvd device |
| JPS56121631A (en) * | 1980-02-29 | 1981-09-24 | Canon Inc | Film forming device |
| JPS56130465A (en) * | 1980-03-14 | 1981-10-13 | Canon Inc | Film forming method |
-
1982
- 1982-01-07 JP JP61582A patent/JPS58118111A/en active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5391664A (en) * | 1977-01-24 | 1978-08-11 | Hitachi Ltd | Plasma cvd device |
| JPS56121631A (en) * | 1980-02-29 | 1981-09-24 | Canon Inc | Film forming device |
| JPS56130465A (en) * | 1980-03-14 | 1981-10-13 | Canon Inc | Film forming method |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58147026A (en) * | 1982-02-24 | 1983-09-01 | Toshiba Corp | Apparatus for film formation by glow discharge |
| JPS6086276A (en) * | 1983-10-17 | 1985-05-15 | Canon Inc | Formation of deposited film by discharge |
| JPS6153432B2 (en) * | 1983-10-17 | 1986-11-18 | Canon Kk | |
| CN102335580A (en) * | 2011-06-21 | 2012-02-01 | 浙江大学 | Apparatus and method for preparing group IV nanoparticles with capacitive coupling plasma |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0472378B2 (en) | 1992-11-18 |
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